• Journal of Korean Society of Water and Wastewater
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• v.35 no.6
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• pp.465-476
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• 2021

Scale and rust generation in water pipes is a common phenomenon when cast iron water pipes have been used for a long time. A physical water treatment device is known among various means for suppressing rust in a water pipe, and a zinc ionization device for putting zinc metal into a pipe and emitting the zinc cation into water is one of such devices. This research measured the amount of zinc ion generated, which is known to exhibit an effect of inhibiting rust and scale generation in a pipe, and examined the scale and rust inhibition effect of the ionization device installed for ground or building water supply. In the case of distilled water, the concentration of zinc ion increased by circulating water in the ionization device several times, and it was verified to be hundreds of ㎍/L, and in the case of discharging ground or tap water, it was verified to be tens of ㎍/L. In addition, a verification pipe was installed to confirm the change inside the pipe before and after installation of the zinc ionization device, and the internal condition of the pipe was observed 3 months to several years after installation. It was confirmed that the corrosion area of the surface of the pipe was no longer increased by installing a corrosion inhibitor, and if the pipe was already filled with corrosion products, the amount of corrosion products gradually decreased every year after installation. The phenomenon of fewer corrosion products could be interpreted as expanding the space in the pipe due to the corrosion product as Fe₂O₃ adhered to the inner surface of the pipe and turned into a smaller black Fe₃O₄. In addition, we found that scale such as CaCO₃ together in the corrosion by-products gradually decreased with the attachment of the ionization device.

• Journal of the Korea Academia-Industrial cooperation Society
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• v.19 no.6
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• pp.709-714
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• 2018

This study researched the reasons for changing polarity in accordance with junction properties in an interface of semiconductors. The contact properties of semiconductors are related to the effect of the semiconductor's device. Therefore, it is an important factor for understanding the junction characteristics in the semiconductor to increase the efficiency of devices. For generation of various junction properties, carbon-doped silicon oxide (SiOC) was deposited with various argon (Ar) gas flow rates, and the characteristics of the SiOC was varied based on the polarity in accordance with the Ar gas flows. Tin-doped zinc oxide (ZTO) as the conductor was deposited on the SiOC as an insulator to research the conductivity. The properties of the SiOC were determined from the formation of a depletion layer by the ionization reaction with various Ar gas flow rates due to the plasma energy. Schottky contact was good in the condition of the depletion layer, with a high potential barrier between the silicon (Si) wafer and the SiOC. The rate of ionization reactions increased when increasing the Ar gas flow rate, and then the potential barrier of the depletion layer was also increased owing to deficient ions from electron-hole recombination at the junction. The dielectric properties of the depletion layer changed to the properties of an insulator, which is favorable for Schottky contact. When the ZTO was deposited on the SiOC with Schottky contact, the stability of the ZTO was improved by the ionic recombination at the interface between the SiOC and the ZTO. The conductivity of ZTO/SiOC was also increased on SiOC film with ideal Schottky contact, in spite of the decreasing charge carriers. It increases the demand on the Schottky contact to improve the thin semiconductor device, and this study confirmed a high-performance device owing to Schottky contact in a low current system. Finally, the amount of current increased in the device owing to ideal Schottky contact.

• Bulletin of the Korean Chemical Society
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• v.22 no.7
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• pp.743-747
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• 2001

New azomethine metal complexes were synthesized systematically and characterized. Beryllium, magnesium, or zinc ions were used as a central metal cation and aromatic azomethines (L1-L4) were employed as a chelating anionic ligand. Emission peaks o f the complexes in both solution and solid states were observed mostly at the region of 400-500 nm in the luminescence spectra, where blue light was emitted. Three of them (BeL1 (Ⅰ), ZnL2 (Ⅱ), and ZnL3 (Ⅲ)) were sublimable and thus were applied to the organic light-emitting devices (OLED) as an emitting layer, respectively. The device including the emitting layer of Ⅰ exhibited white emission with the broad luminescence spectral range. The device with the emitting layer of Ⅱ showed blue luminescence with the maximum emission peak at 460 nm. Their ionization potentials, electron affinities, and electrochemical band gaps were investigated with cyclic voltammetry. The electrochemical gaps of 2.98 for I, 2.70 for Ⅱ, and 2.63 eV for Ⅲ were found to be consistent with their respective optical band gaps of 3.01, 2.95 and 2.61 eV within an experimental error. The structure of OLED manufactured in this study reveals that these complexes can work as electron transporting materials as well.