• Proceedings of the Materials Research Society of Korea Conference
• /
• 2011.05a
• /
• pp.62.1-62.1
• /
• 2011

현재 상용화된 LED 또는 태양전지 등의 투명전극(TCO, transparent couducting oxide)재료로 높은 전기전도도와 광투과도를 갖는 ITO (Indium Tin Oxide)가 많이 채택되고 있다. 그러나 이에 사용되는 Indium의 단가가 높다는 문제점이 있어 이를 대체하기 위한 물질의 연구가 많이 이루어지고 있다. 특히 Aluminum을 doping한 ZnO (AZO)는 우수한 전기적, 광학적 특성 등으로 인해 ITO를 대체할 차세대 TCO 물질로 각광받고 있다. 본 연구에서는 sol-gel법을 및 direct patterning법을 이용하여 moth-eye 패턴을 포함하는 AZO 박막을 제작하였다. AZO sol을 제작하기 위하여 2-methoxyethanol, zinc acetate dihydrate 및 doping source로 aluminum nitrate nonahydrate를 사용하였다. 또한 광추출 향상 효과를 갖는 moth-eye 구조의 master stamp를 Polydimethyl siloxane(PDMS)를 이용하여 역상 moth-eye 구조의 mold를 복제하였으며, 이 복제된 mold와 제작된 AZO sol을 이용한 direct patterning법을 통해 나노급 moth-eye 구조를 갖는 AZO 투명전극층을 형성하였다. 제작된 moth-eye 구조를 갖는 AZO 투명전극층의 전기적 특성 평가를 위해, 4-point probe 측정 및 Hall measurement를 시행하였으며, 광학적 특성을 확인하기 위하여 UV-Visable spectrometer를 이용하여 투과도를 측정하였다. 본 연구를 통해 현재 상용화된 광전자 소자에 사용되고 있는 ITO 투명전극을 대체할 차세대 투명전극으로써 AZO 박막의 가능성을 확인하였다.

• Journal of the Korean Ceramic Society
• /
• v.55 no.2
• /
• pp.140-144
• /
• 2018

$ZnO/TiO_2$ nanocomposites were synthesized via a modified sol-gel technique by incorporating 30 and 70 wt% $TiO_2$ nanopowder into a ZnO sol-gel matrix. Zinc acetate dihydrate was used as the ZnO precursor and de-ionized water as the solvent, while titanium oxysulfate was employed for the synthesis of $TiO_2$ nanopowder. The synthesized $ZnO/TiO_2$ nanocomposites were characterized by x-ray diffraction, UV-vis spectroscopy, scanning electron microscopy, and transmission electron microscopy. The $ZnO/TiO_2$ nanocomposites showed both the ZnO (wurtzite) and $TiO_2$ (anatase) phases. The average ZnO crystallite size of the $ZnO/TiO_2$ nanocomposites was found to be about 26.3 nm. The TEM results confirmed that spherical $TiO_2$ particles were embedded in the ZnO matrix. $TiO_2$ particles attached onto the rod-like ZnO particles were also observed. The $ZnO/TiO_2$ nanocomposites exhibited optical absorption properties superior to those of pure ZnO and $TiO_2$.

• Proceedings of the Korean Vacuum Society Conference
• /
• 2012.02a
• /
• pp.400-400
• /
• 2012

산화물 반도체는 넓은 에너지갭을 가지고 높은 이동성과 높은 투명성을 가지기 때문에 초고 속 박막 트랜지스터(Thin film transistor; TFT)에 많이 응용되고 있다. 그러나 ZnO 및 $In_2O_3$ 산화물 반도체를 박막트랜지스터에 사용할 경우 소자가 불안정하여 전기적 성질이 저하되고 문턱전압의 이동이 일어난다. TFT에 사용되는 산화물 반도체로는 GaInZnO, ZrInZnO, HfInZnO 및 GaSnZnO의 전기적 특성에 관한 연구가 많이 되었다. 그러나 titanium-indium-zinc-oxide (TIZO) TFT에 대한 연구는 비교적 적게 수행 되었다. 본 연구에서는 TFTs의 안정성을 향상하기 위하여 TFT의 채널로 사용되는 TiInZnO를 형성하는데 간단한 제조 공정과 낮은 비용의 용액 증착방법을 사용하였다. 졸-겔 전해액은 Titanium (IV) isopropoxide $[Ti(OCH(CH_3)_2)_4]$, 0.1 M Zinc acetate dihydrate $[Zn(CH_3COO)_2{\cdot}2H_2O]$ 그리고 indium nitrate hydrate $[In(NO_3)_3{\cdot}xH_2O]$을 2-methoxyethanol의 용액에 합성하였다. $70^{\circ}C$에서 한 시간 동안 혼합 하였다. Ti의 몰 비율은 10%, 20% 및 40% 로 각각 달리하여 제작하였다. $SiO_2$층 위에 2,500 rpm 속도로 25초 동안 스핀 코팅하여 TFT를 제작하였다. TIZO 박막에 대한 X-선 광전자 스펙트럼 관측 결과는 Ti 몰 비율이 증가함에 따라 Ti 2p1/2피크의 세기가 증가함을 보여주었다. TiZO 박막에 Ti 원자를 첨가하면 $O^{2-}$ 이온이 감소하기 때문에 전하의 농도가 변화하였다. 전하 농도의 변화는 TiZO 채널을 사용하여 제작한 TFT의 문턱전압을 양 방향으로 이동 하였으며 off-전류를 감소하였다. TiZO 채널을 사용하여 제작한 TFT의 드레인 전류-게이트 전압 특성은 on/off비율이 $0.21{\times}107$ 만큼 크며 이것은 TFT 소자로서 우수한 성능을 보여주고 있다.

• Journal of the Korean Ceramic Society
• /
• v.46 no.1
• /
• pp.74-80
• /
• 2009

Electrospinning process is the useful and unique method to produce nanofibers from metal precursor and polymer solution by controlled viscosity. In this study, the NiZn ferrite nanofibers were prepared by electrospinning with a aqueous metal salts/polymer solution that contained polyvinyl pyrrolidone and Fe (III) chloride, Ni (II) acetate tetrahydrate and zinc acetate dihydrate in N,N-dimethylformamide. The applied electric field and spurting rate for spinning conditions were 10 kV, 2 ml/h, respectively. The obtained fibers were treated at $250^{\circ}C$ for 1 h to remove the polymer. Finally, the NiZn ferrite fibers were calcined at $600^{\circ}C$ for 3 h and annealed at $900{\sim}1200^{\circ}C$ in air. By tuning the viscosity of batch solution before electrospinning, we were able to control the microstructure of NiZn ferrite fiber in the range of $150{\sim}500\;nm$ at 770 cP. The primary particle size in $600^{\circ}C$ calcined ferrite fiber was about 10 nm. The properties of those NiZn ferrite fibers were determined from X-ray diffraction analysis, electron microscopy, energy dispersive spectroscopy, Fourier transform infrared spectroscopy, thermal analysis, and magnetic measurement.

• Journal of Surface Science and Engineering
• /
• v.46 no.3
• /
• pp.105-110
• /
• 2013

ZnS thin films were prepared on glass substrate by using chemical bath deposition method. The influence of ammonia ($NH_4OH$) and $Na_2EDTA$ ($Na_2C_{10}H_{16}N_2O_8$) as complexing agents on structural and optical properties of ZnS thin films were investigated. Zinc acetate dihydrate ($Zn(CH_3COO)_2{\cdot}2H_2O$) and thiourea ($H_2NCSNH_2$) were used as a starting materials and distilled water was used as a solvent. All ZnS thin films, regardless of a kind of complexing agents, had the hexagonal structure (${\alpha}$-ZnS) and had a preferred <101> orientation. ZnS thin films, with 4 M ammonia and with 4 M ammonia and 0.1 M $Na_2EDTA$, had the highest <101> peak intensity. In addition, their average particle size are 280 nm and 220 nm, respectively. The average optical transmittances of all films were higher than 60% in the visible range. The optical direct band gap values of films were about 3.6~3.8 eV.

• Proceedings of the Materials Research Society of Korea Conference
• /
• 2010.05a
• /
• pp.31.2-31.2
• /
• 2010

질화물계 발광다이오드는 소비전력이 낮고 발광효율이 높은 조명용 반도체소자로서 다양한 분야에 적용되고 있으나 질화갈륨 반도체 층 및 외부 공기와의 계면에서 발생하는 전반사로 인하여 광추출특성이 매우 낮은 문제점이 있다. 이를 해결하기 위하여 다양한 연구가 진행되고 있으며 투명전극 또는 p형 질화갈륨 층에 주기적인 나노 패턴을 형성하고 이에 따른 난반사 효과를 통해 전반사를 억제시키는 연구가 주로 진행되고 있다. 현재까지의 연구에서 발광다이오드의 광추출향상을 위한 나노 패턴은 플라즈마 식각공정을 통하여 형성되었지만 플라즈마 데미지에 의해 소자의 전기적 특성이 저하되는 문제점이 있었다. 본 연구에서는 플라즈마 식각 공정이 요구되지 않는 sol-gel 임프린팅 공정을 이용하여 발광다이오드의 ITO 투명전극 위에 산화아연 나노 패턴을 직접 형성하였다. Sol 솔루션은 에탄올에 zinc acetate dihydrate와 diethanolamine을 희석하여 제작하였고 이를 스핀코팅 방법을 통해 발광다이오드의 ITO 투명전극 층 위에 도포하였다. 이 후, 고 투습성의 PDMS (Polydimethylsiloxane) 몰드를 이용하여 $190^{\circ}C$에서 임프린팅을 진행하였고 이 과정에서 대부분의 솔벤트(에탄올)는 PDMS 몰드로 흡수되어 임프린팅 후에는 나노 패턴이 형성된 산화아연 gel 박막을 얻을 수 있었다. 최종적으로 $500^{\circ}C$에서 1시간 동안 열처리 하여 발광다이오드의 ITO 투명전극 위에 산화아연 나노 패턴을 형성하였다. 나노임프린팅 기반의 직접 패터닝 공정을 통하여 형성된 산화아연 패턴 층을 XRD 측정을 통해 결정성을 분석하였고 형성된 패턴의 형상을 SEM을 통해 확인하였다. 또한, 산화아연 패턴 유무에 따른 발광다이오드 소자의 광추출효율 비교를 위해 electroluminescence를 측정하였으며, 소자의 전기적 특성은 I-V 측정을 통해 분석하였다.

• Journal of the Korean Ceramic Society
• /
• v.33 no.2
• /
• pp.149-154
• /
• 1996

ZnO and Al-doped ZnO thin films were prepared by sol-gel dip-coating method and electrical and optical properties of films were investigated. Using the zinc acetate dihydrate and acetylaceton(AcAc) as a chelating agent stable ZnO sol was synthesized with HCl catalyst. Adding aluminium chloride to the ZnO sol Al-doped ZnO sol could be also synthesized. As Al contents increase the crystallinity of ZnO thin film was retarded by increased compressive stress in the film resulted from the difference of ionic radius between Zn2+ and Al3+ The thickness of ZnO and Al-doped ZnO thin film was in the range of 2100~2350$\AA$. The resistivity of ZnO thin films was measured by Van der Pauw method. ZnO and Al-doped ZnO thin films with annealing temperature and Al content had the resistivity of 0.78~1.65$\Omega$cm and ZnO and Al-doped ZnO thin film post-annealed at 40$0^{\circ}C$ in vacuum(5$\times$10-5 torr) showed the resistivity of 2.28$\times$10-2$\Omega$cm. And the trans-mittance of ZnO and Al-doped ZnO thin film is in the range of 91-97% in visible range.

• Proceedings of the Korean Vacuum Society Conference
• /
• 2010.02a
• /
• pp.101-101
• /
• 2010

ZnO shows a direct band gap of 3.37eV, large exciton binding energy (~60 meV), high oxidation ability, high sensitivity to many gases, and low cost, and it has been used in various applications such as transparent electrodes, light emitting diodes (LEDs), gas sensors and photocatalysts. Among these applications ZnO as photocatalyst has considerably attracted attention over the past few years because of its high activities in removing organic contaminants generated from industrial activities. In this research, ZnO nanoparticles were synthesized by spray-pyrolysis method using the zinc acetate dihydrate as starting material at synthesis temperature of $900^{\circ}C$ with concentration varied from 0.01 to 1.0M. The physical and chemical properties of the synthesized ZnO nanoparticles were examined by X-ray Diffraction (XRD), Scanning Electron Microscopy (SEM), Fourier Transformation Infrared (FT-IR), and UV-vis spectroscopy. The Miller indices of XRD patterns indicate that the synthesized ZnO nanoparticles showed a hexagonal wurtzite structure. With increased precursor concentration, a primary, secondary particle sizes of ZnO nanoparticles increased by 0.8 to $1.5{\mu}m$ and 15 to 35nm, and their crystallinity was improved. Methyleneblue (MB) solution ($1{\mu}M$) as a test comtaminant was prepared for evaluating the photocatalytic activities of ZnO nanoparticles synthesized in different precursor concentration. The results show that the photocatalytic efficiency of ZnO nanoparticles was gradually enhanced by increased precursor concentration.

• Journal of the Korean Ceramic Society
• /
• v.42 no.7 s.278
• /
• pp.475-482
• /
• 2005

Zn$_{l-x}$Co$_{x}$O (x = 0.05 - 0.20) films were grown on Coming 7059 glass by sol-gel process. A homogeneous and stable Zn$_{l-x}$Co$_{x}$O sol was prepared by dissolving zinc acetate dihydrate (Zn(CH$_{3}$COO)$_{2}$$\cdot$2H$_{2}$O), cobalt acetate tetrahydrate ((CH$_{3}$)$_{2}$$\cdot$CHOH) and aluminium chloride hexahydrate (AlCl$_{3}$ $\cdot$ 6H$_{2}$O) as solute in solution of isopropanol ((CH$_{3}$)$_{2}$$\cdot$CHOH) and monoethanolamine (MEA:H$_{2}$NCH$_{2}$CH$_{2}$OH). The films grown by spin coating method were postheated in air at 650°C for 1 h and annealed in the condition of vacuum (5 $\times$ 10$^{-6}$ Torr) at 300$^{\circ}C$ for 30 min and investigated the nature of c-axis preferred orientation and physical properties with different Co concentrations. Znl_xCOxO thin films with different Co concentrations were well oriented along the c-axis, but especially a highly c-axis oriented Zn$_{l-x}$Co$_{x}$O thin film was grown at 10 at$\%$ Co concentration. The transmittance spectra showed that Zn$_{l-x}$Co$_{x}$O thin films occur typical d-d transitions and sp-d exchange interaction became activated with increasing Co concentration. The electrical resistivity of the films at 10 at$\%$ Co had the lowest value due to the highest c-axis orientation. X-ray photoelectron spectroscopy and alternating gradient magnetometer analyses indicated that no Co metal cluster was formed, and the ferromagnetic properties appeared, respectively. The characteristics of the electrical resistivity and room temperature ferromagnetism of Zn$_{l-x}$Co$_{x}$O thin films suggested the possibility for the application to dilute magnetic semiconductors.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
• /
• v.33 no.3
• /
• pp.214-218
• /
• 2020

In this study, Mg_xZn_1-xO thin films, which can be applied not only to active layers of light-emitting devices (LEDs), such as UV-LEDs, but also to solar cells, high mobility field-effect transistors, and power semiconductor devices, are fabricated using the sol-gel method. ZnO and Mg_0.3Zn_0.7O solution synthesized by the sol-gel method and the thin film were grown by spin coating on a Si (100) substrate and sapphire substrate. The solutions are synthesized by dissolving precursor materials in 2-methoxyethanol (2-ME) solvent, and then monoethanolamine (MEA) was added to the mixed solution as a sol stabilizer. Zinc acetate dihydrate is used as a ZnO precursor, while Mg nitrate hexahydrate and Mg acetate tetrahydrate are used as an MgO precursor. Then, the optical and structural characteristics of the fabricated thin films are compared. The molar concentration of the Zn precursor in the solvent is fixed at 0.3 M, and the amount of the Mg precursor is 30% of Mg²⁺/Zn²⁺. The optical characteristics are measured using an UV-vis spectrophotometer, and the transmittance of each wavelength is measured. Structural characteristics are measured using X-ray diffraction (XRD) and transmission electron microscopy (TEM). Composition analyses are performed using energy dispersive X-ray spectroscopy (EDS). The Mg_0.3Zn_0.7O thin film was well formed at the ratio of the Mg precursor added regardless of the type of Mg precursor, and the c-axis of the thin film was decreased, while the band gap was increased to 3.56 eV.