• Journal of the Korean earth science society
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• v.23 no.1
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• pp.52-58
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• 2002

A colorless and transparent zirconium oxide ($Zr_{0.73}Y_{0.27}O_{1.87}$) crystal has been synthesized by the Bridgman-Stockbager method. The gem-quality material is produced by adding 20${\sim}$25 wt.% $Y_2O_3$ (stabilizer) and 0.04 wt.% $Nd_2O_3$ (decolorising agent) to the $ZrO_2$ powder. It shows a vitreous luster with a slight oily appearance. Under a polarizing microscope, it shows isotropic nature with no appreciable anisotropism. Mohs hardness value and specific gravity is measured to be 8${\sim}$$8{\frac{1}{2}}$ and 5.85, respectively. Under ultraviolet light it shows a faint white glow. The crystal structure of yttria-stabilized zirconia with 0.27 at.% Y has been re-investigated, using single crystal X-ray diffraction, and confirmed to be a cubic symmetry, space group $Fm{\overline{3}}m$ ($O^5_h$) with a=5.1552(5) ${{\AA}}$, V=136.99(5) ${{\AA}}^3$, Z=4. The stabilizer atoms randomly occupy the zirconium sites and there are displacements of oxygen atoms with amplitudes of ${\Delta}/a{\sim}$0.033 and 0.11 along <110> and <111> from the ideal positions of the fluorite structure, respectively.

• Journal of the Korean Institute of Telematics and Electronics
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• v.27 no.9
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• pp.1419-1426
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• 1990

The microstructure and electrical conductivity characteristics were examined for the Yttria Stablized Zirconia that were added Titania with the concentration of 0.02wt%, 0.05wt% and 0.1wt%. The stabilized cubic phase had not been changed. The obtained density of the sintered body was higher than 97% of the theoretical density as the grain growth and proe removal. And the highest density of 5.91g/cm**3 was obtained for 0.02wt% addition of TiO2. When 0.02 wt% TiO2 was added to YSZ, the electrical conductivity was 0.293.(\ulcorner.cm)**-1 and the limit of electrolyte regime Pn was 4x10**-28 atm. at 1, 100\ulcorner, respectively. Those were improved value compared with the electrical conductivity 0.107 (\ulcorner.cm)**-1 and Pn 1.5x10**-27atm. without adding TiO2.

• Journal of the Korean Magnetics Society
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• v.12 no.2
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• pp.41-45
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• 2002

The low-field tunnel-type magnetoresistance (MR) properties of sol-gel derived $La_{0.7}Pb_{0.3}MnO_3(LPMO)$ thin film deposited on different substrate have been investigated. Polycrystalline thin films were fabricated by spin-coating on $SiO_2/Si(100)$ substrate and that with yttria-stabilized zirconia (YSZ) buffer layer, while c-axis-oriented thim film was grown on $LaAlO_3(001)$ (LAO) single crystal substrate. The full width half maximum (FWHM) of the rocking curve scan of LPMO/LAO film is $0.32^{\circ}$. Tunnel-type MR ratio is 0.52 % in $LPMO/SiO_2/Si$(100) film and that of $LPMO/YSZ/SiO_2/Si$(100) film is as high as 0.68 %, whereas that of LPMO/LAO(001) film is less than 0.4 % under the applied field of 500 Oe at 300 K. Well-pronounced MR hysteresis was registered with an MR peak in the vicinity of the coercive field. The low-field tunnel-type MR characteristics of thin films deposited on different substrates originates from the behavior of grain boundary properties.

• Applied Chemistry for Engineering
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• v.7 no.6
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• pp.1125-1131
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• 1996

Ca or Sr-doped $PrMnO_3$ were prepared for cathode material of solid oxide fuel cell. The characteristics such as the electrical conductivity and the cathodic overpotential were investigated as to doping contents. Also the reactivity with yttria stabilized zirconia of electrolyte, and the thermal expansion coefficient were studied. The prepared perovskite powder had the mean particle size of $2{\sim}5{\mu}m$, and the particle size and the surface area was out of relation to the doping content. When Ca doping amount of electrode material was 30mol%, the electrical conductivity was the highest value of $266S{\cdot}cm^{-1}$ at $1000^{\circ}C$, and also the polarization characteristics showed the best property. The reactivity between YSZ and Ca-doped $PrMnO_3$ at $1200^{\circ}C$ for 100hours was lower than that between YSZ and Sr-doped $PrMnO_3$. The thermal expansion coefficient of $Pr_{0.7}Ca_{0.3}MnO_3$ was $1.19{\times}10^{-5}K^{-1}$ in the temperature range of $300{\sim}1000^{\circ}C$, and this value was similar to that of YSZ, $1.15{\times}10^{-5}K^{-1}$.

• Transactions of Materials Processing
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• v.27 no.1
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• pp.48-53
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• 2018

Aluminum nitride (AlN) is used by the semiconductor industry that has requirements for high thermal conductivity. The theoretical thermal conductivity of single crystal AlN is 320W/mK. Whereas, the values measured for polycrystalline AlN ceramics range from 20 W/mK to 280 W/mK. The variability is strongly dependent upon the purity of the starting materials and non-uniform dispersibility of the sintering additive. The conventional AlN sintering additive used yttria ($Y_2O_3$), but the dispersibility of the powder in the mixing process was important. In this study, we investigated the mechanical and thermal conductivity of yttrium nitrate ($Y(NO_3)_3{\cdot}6H_2O$), as a sintering additive in order to improve the dispersibility of $Y_2O_3$. The sintering additives content was in the range of 2 to 4.5wt.%. The density of AlN gradually increased with increasing contents of sintering additive and the flexural strength gradually increased as well. The flexural strength of the sintered body containing 4 wt% of $Y_2O_3$ and $Y(NO_3)_3{\cdot}6H_2O$ was 334.1 MPa and 378.2 MPa, respectively. The thermal conductivities were 189.7W/mK and 209.4W/mK, respectively. In the case of hardness, there was only a slight difference and the average value was about 10 GPa. Therefore, densification, density and strength values were found to be proportional to its content. It was confirmed that AlN using $Y(NO_3)_3{\cdot}6H_2O$ displayed relatively higher thermal conductivity and mechanical properties than the $Y_2O_3$.

• Proceedings of the Korean Society of Tribologists and Lubrication Engineers Conference
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• 2001.06a
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• pp.346-353
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• 2001

Zirconia powder containing 3 mol% yttria(3Y-PSZ) with and with out Fe$_2$O$_3$ addition was coated on tile cast iron substrate by plasma spraying method. The erosion experiments were performed at temperatures from $25^{\circ}C$ to $600^{\circ}C$. A gas blast type erosion tester was used to examine erosion behavior of the specimens. The results of 3Y-PSZ coatings showed that tile erosion rate had maximum value at 40$0^{\circ}C$. It coincided with tile results of phase transformation tetragonal phase to monoclinic phase caused by low temperature thermal degradation. The tensile stress relaxation and the micro-hardness improvement significantly influenced on the erosion rate at $600^{\circ}C$. In the case of Fe$_2$O$_3$ added 3Y-PSZ coatings, the erosion rate of tested at $25^{\circ}C$ showed maximum value at 5.0 mol% Fe$_2$O$_3$ added coating. This tendency is caused by the improvement of mechanical properties and the tensile residual stress. The erosion rate at 200'c and 400'L showed significantly decrease by Fe203 addition. This decrease is believed to be the stabilization of the tetragonal phase and the increase of micro-hardness.

• Proceedings of the Materials Research Society of Korea Conference
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• 2010.05a
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• pp.49.1-49.1
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• 2010

The particle generation during the plasma enhanced process is highly considered as serious problem in the semiconductor manufacturing industry. The material for the plasma processing chamber requires the plasma etching characteristics which are homogeneously etched surface and low plasma etching depth for preventing particulate contamination and high durability. We found that the materials without grain boundaries can prevent the particle generation. Therefore, the amorphous material with the low plasma etching rate may be the best candidate for the plasma processing chamber instead of the polycrystalline materials such as yttria and alumina. Three glasses based on $SiO_2$ and $Al_2O_3$ were prepared with various rare-earth elements (Gd, Y and La) which are same content in the glass. The glasses were plasma etched in the same condition and their plasma etching rate was compared including reference materials such as Si-wafer, quartz, yttria and alumina. The mechanical and thermal properties of the glasses were highly related with cationic field strength (CFS) of the rare-earth elements. We assumed that the plasma etching resistance may highly contributed by the thermal properties of the fluorine byproducts generated during the plasma exposure and it is expected that the Gd containing glass may have the highest plasma etching resistance due to the highest sublimation temperature of $GdF_3$ among three rare-earth elements (Gd, Y and La). However, it is found that the plasma etching results is highly related with the mechanical property of the glasses which indicates the cationic field strength. From the result, we conclude that the glass structure should be analyzed and the plasma etching test should be conducted with different condition in the future to understand the plasma etching behavior of the glasses perfectly.

• Korean Journal of Materials Research
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• v.4 no.5
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• pp.510-515
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• 1994

Yttria-stabilized zirconia(YSZ) films were prepared onto p-type (100) silicon wafer by a plasma-enhanced metallorganic chemical vapor deposition(PE MO CVD) processing involving the application of vapor mixture of tri(2.2.6.6-tetramethyl-3, 5-heptanate) yttrium$[Y(DPM)_3]$, zirconiumtriflouracethyla cetonate$(Zr(tfacac)_4$ and oxygen gas. The x-ray diffraction(XRD) and fourier transform infrared spectra(FT1R) results showed that the deposited YSZ films had a single cubic phase. $Y_2O_3$ content of YSZ film was analyzed by PIXE(partic1e induced x-ray emission). The experimental results by PIXE revealed that 12.lmol%, 20.4mol% and 31.6mol% $Y_2O_3$ could be obtained as the $Y(DPM)_3$ bubbling temperature varied at $160^{\circ}C, 165^{\circ}C$ and $170^{\circ}C$ respectively. The increase of $Y(DPM)_3$ bubbling temperature caused shifting flat band voltage to have a negative value.

• Korean Journal of Materials Research
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• v.22 no.2
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• pp.78-81
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• 2012

$Y_2O_3$ nanomaterials have been widely used in transparent ceramics and luminescent devices. Recently, many studies have focused on controlling the size and morphology of $Y_2O_3$ in order to obtain better material performance. $Y_2O_3$ powders were prepared under a modified solvothermal condition involving precipitation from metal nitrates with aqueous ammonium hydroxide. The powders were obtained at temperatures at $250^{\circ}C$ after a 6h process. The properties of the $Y_2O_3$ powders were studied as a function of the solvent ratio. The synthesis of $Y_2O_3$ crystalline particles is possible under a modified solvothermal condition in a water/ethylene glycol solution. Solvothermal processing condition parameters including the pH, reaction temperature and solvent ratio, have significant effects on the formation, phase component, morphology and particle size of yttria powders. Ethylene glycol is a versatile, widely used, inexpensive, and safe capping organic molecule for uniform nanoparticles besides as a solvent. The characterization of the synthesized Y2O3 powders were studied by XRD, SEM (FE-SEM) and TG/DSC. An X-ray diffraction analysis of the synthesized powders indicated the formation of the $Y_2O_3$ cubic structure upon calcination. The average crystalline sizes and distribution of the synthesized $Y_2O_3$ powders was less than 2 um and broad, respectively. The synthesized particles were spherical and hexagonal in shape. The morphology of the synthesized powders changed with the water and ethylene glycol ratio. The average size and shape of the synthesized particles could be controlled by adjusting the solvent ratio.

• Journal of the Korean Ceramic Society
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• v.34 no.10
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• pp.1067-1073
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• 1997

The yttria doped ceria (YDC) thin films were fabricated by electrochemical vapor deposition on the porous $\alpha$-Al2O3 substrate. The growth rates of the films obeyed a parabolic rate law, which constant was 259.0 $m^2$/hr at 120$0^{\circ}C$. As deposition temperature (above 110$0^{\circ}C$) increased, dense thin films were enhanced. Mole fraction of XYC13 had an effect upon surface morphologies. Electrical conductivity was increased with deposition temperature. The conductivity of YDC film prepared at XYC13=7.9$\times$10-2 was about 0.097 S/cm at 104$0^{\circ}C$ and the activation energy of conduction was calculated to be 26.6 kcal/mol.