• Title/Summary/Keyword: Yellow phosphors

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Development of yellow and blue phosphor and their emission properties

  • Park Soo-Gil;Cho Seong-Ryoul;Son Won-Ken;Lim Kee-Joe;Lee Ju-Seong
    • Journal of the Korean Electrochemical Society
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    • v.1 no.1
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    • pp.24-27
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    • 1998
  • Electroluminescence (EL) comes from the light emission obtained by the electrical excitation energy passing through a phosphor layer undo. an applied high electrical field $(10^6 V/cm)$. The preparation of white and blue phosphors and characterizations of light emitting alternating current powder electroluminescent devices (ACPELDs) were investigated. In this work, we fabricated two kinds of ELDs, that is, yellow electroluminescent device (B-ELD), blue electroluminescent device (B-ELD). The basic st.uctures of Y-ELD and B-ELD are ITO (Indium Tin Oxide)/phosphor layer/Insulator layer/Carbon electrode and ITO/Phosphor layer/Insulating layer/carbon electrode, respectively. Another structures of ITO/Phosphor and Insulator mixture layer/Backelectrode are introduced. EL spectra and luminance of two types of ELDs were measured by changing voltage at fixed frequency 0.4kHz, 1.5kHz. Blue and yellow phosphors prepared in this work show $50cd/m^2\;and\;30cd/m^2$ of luminance at 400Hz, 150V.

Luminescence properties of novel Sr-Y-Si-Oxynitride yellow phosphor for LED applications (LED용 Sr-Y-Si-계 산질화물 황색 형광체의 발광 특성)

  • Jeong, Ok Geun;Park, Jong Cheon;Ryu, Jeong Ho;Cho, Hyun
    • Journal of the Korean Crystal Growth and Crystal Technology
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    • v.23 no.4
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    • pp.195-200
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    • 2013
  • Novel Sr-Y-Si-Oxynitride yellow phosphors were synthesized and the effect of calcination temperature, reduction temperature and $Eu^{2+}$ concentration on their luminescence properties were studied. Optimal temperature conditions were found to be $1400^{\circ}C$ and $1300^{\circ}C$ for solid-state reaction and reduction, respectively. The synthesized $Ba_9Y_{2+y}Si_6O_{24-3y}N_{3y}:Eu^{2+}$ phosphors showed a single intense broadband emission in the range of 571~587 nm for 450 nm excitation light source. The highest luminescence intensity was obtained with Eu concentration of 3 mol% and concentration quenching was observed beyond 5 mol%. FE-SEM and PSA showed that the synthesized phosphors consists of particles with an average size of ${\sim}8.2{\mu}m$.

Synthesis and Photoluminescence Properties of Dy3+- and Eu3+-codoped CaMoO4 Phosphors (Dy3+와 Eu3+ 이온이 동시 도핑된 CaMoO4 형광체의 합성과 발광 특성)

  • Kim, Junhan;Cho, Shinho
    • Journal of the Korean institute of surface engineering
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    • v.48 no.3
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    • pp.82-86
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    • 2015
  • $Dy^{3+}$- and $Eu^{3+}$-codoped $CaMoO_4$ Phosphors were synthesized by using the solid-state reaction method. The crystal structure, morphology, and optical properties of the resulting phosphor particles were investigated by using the X-ray diffraction, field-emission scanning electron microscopy, and photoluminescence spectroscopy. XRD patterns exhibited that all the synthesized phosphors showed a tetragonal system with a main (112) diffraction peak, irrespective of the content of $Eu^{3+}$ ions. As the content of $Eu^{3+}$ ions increased, the grains showed a tendency to agglomerate. The excitation spectra of the synthesized powders were composed of one strong broad band centered at 305 nm in the range of 220 - 350 nm and several weak peaks in the range of 350 - 500 nm resulting from the 4f transitions of activator ions. Upon ultraviolet excitation at 305 nm, the yellow emission line due to the $^4F_{9/2}{\rightarrow}^6H_{13/2}$ transition of $Dy^{3+}$ ions and the main red emission spectrum resulting from the $^5D_0{\rightarrow}^7F_2$ transition of $Eu^{3+}$ ions were observed. With the increase of the content of $Eu^{3+}$, the intensity of the yellow emission band gradually decreased while that of the red emission increased. These results indicated that the emission intensities of yellow and red emissions could be modulated by changing the content of the $Dy^{3+}$ and $Eu^{3+}$ ions incorporated into the host crystal.

Development & Reliability Verification of Ultra-high Color Rendering White Artificial Sunlight LED Device using Deep Blue LED Light Source and Phosphor (Deep Blue LED 광원과 형광체를 이용한 초고연색 백색 인공태양광 LED 소자의 개발)

  • Jong-Uk An;Tae-Kyu Kwon
    • Journal of Korean Society of Industrial and Systems Engineering
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    • v.46 no.3
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    • pp.59-68
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    • 2023
  • Currently, yellow phosphor of Y3Al5O12:Ce3+ (YAG:Ce) fluorescent material is applied to a 450~480nm blue LED light source to implement a white LED device and it has a simple structure, can obtain sufficient luminance, and is economical. However, in this method, in terms of spectrum analysis, it is difficult to mass-produce white LEDs having the same color coordinates due to color separation cause by the wide wavelength gap between blue and yellow band. There is a disadvantage that it is difficult to control optical properties such as color stability and color rendering. In addition, this method does not emit purple light in the range of 380 to 420nm, so it is white without purple color that can not implement the spectrum of the entire visible light spectrum as like sunlight. Because of this, it is difficult to implement a color rendering index(CRI) of 90 or higher, and natural light characteristics such as sunlight can not be expected. For this, need for a method of implementing sunlight with one LED by using a method of combining phosphors with one light source, rather than a method of combining red, blue, and yellow LEDs. Using this method, the characteristics of an artificial sunlight LED device with a spectrum similar to that of sunlight were demonstrated by implementing LED devices of various color temperatures with high color rendering by injecting phosphors into a 405nm deep blue LED light source. In order to find the spectrum closest to sunlight, different combinations of phosphors were repeatedly fabricated and tested. In addition, reliability and mass productivity were verified through temperature and humidity tests and ink penetration tests.

Structural, Morphological, and Optical Properties of LaNbO4:RE3+ (RE = Dy, Dy/Sm, Sm) Phosphors (LaNbO4:RE3+ (RE = Dy, Dy/Sm, Sm) 형광체의 구조, 표면, 광학 특성)

  • Lee, Jinhong;Cho, Shinho
    • Journal of the Korean institute of surface engineering
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    • v.51 no.5
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    • pp.271-276
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    • 2018
  • The effects of activator ion on the structural, morphological, and optical properties of $LaNbO_4:RE^{3+}$ (RE = Dy, Dy/Sm, Sm) phosphors were investigated. X-ray diffraction patterns exhibited that all the phosphors showed a monoclinic system with a main (112) diffraction peak, irrespective of the concentration and type of activator ions. The grain size showed a slightly decreasing tendency as the concentration of $Sm^{3+}$ ions increased. The excitation spectra of the $LaNbO_4:Dy^{3+}$, $Sm^{3+}$ phosphor powders consisted of a strong charge transfer band centered at 259 nm in the range of 220-290 nm and five weak peaks. The emission spectra of the $La_{0.95}NbO_4$:5 mol% $Dy^{3+}$ phosphors exhibited two intense yellow and blue bands centered at 575 nm and 479 nm respectively, which resulted from the $^4F_{9/2}{\rightarrow}^6H_{13/2}$ and $^4F_{9/2}{\rightarrow}^6H_{15/2}$ transitions of $Dy^{3+}$. As the concentration of $Sm^{3+}$ was increased, the intensity of the yellow emission band was gradually decreased, while those of orange and red emission bands centered at 604 and 646 nm began to appear and reached maxima at 5 mol%, and then decreased rapidly with further increases in the $Sm^{3+}$ concentration. These results indicated that white light emission could be realized by controlling the concentrations of the $Dy^{3+}$ and $Sm^{3+}$ ions incorporated into the $LaNbO_4$ host crystal.

Improved White Light Emitting Diode Characteristics by Coating GdAG:Ce Phosphor

  • Joshi, Charusheela;Yadav, Pooja;Moharil, S.V.
    • Transactions on Electrical and Electronic Materials
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    • v.15 no.2
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    • pp.69-72
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    • 2014
  • White LEDs, based on blue LED chips coated with a yellow emitting phosphor (YAG:Ce), have several disadvantages. In this paper, we report the improvement in CRI [Color Rendition Index] using $GdAl_5O_{12}:Ce$ (GdAG:Ce) and related phosphors for blue LEDs. A modified combustion synthesis route using mixed fuel was used for synthesis route. By using this procedure, we formed the desired compounds in a single step. LEDs were then fabricated by coating the blue LED chips (CREE 470 nm, 300 micron) with the GdAG:Ce phosphor dispersed in epoxy resin. The CRI typically between 65~70 for the YAG:Ce based LED was improved to 87 for LEDs fabricated from the Gd(Al,Ga)G phosphors.

Photoluminescence Properties of BiNbO4:RE3+ (RE = Dy, Eu, Sm, Tb) Phosphors (BiNbO4:RE3+ (RE = Dy, Eu, Sm, Tb) 형광체의 광학 특성)

  • Lee, Sangwoon;Cho, Shinho
    • Journal of the Korean institute of surface engineering
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    • v.50 no.3
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    • pp.206-211
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    • 2017
  • $BiNbO_4:RE^{3+}$ (RE = Dy, Eu, Sm, Tb) phosphors were prepared by solid-state reaction at $1100^{\circ}C$ and their structural, photoluminescent, and morphological properties were investigated. XRD patterns exhibited that all the synthesized phosphors exhibited a triclinic system with a dominant (210) diffraction peak, irrespective of the type of activator ions. The surface morphologies of rare-earth-ion-doped $BiNbO_4$ phosphors were found to depend strongly on the type of activator ions. The $Eu^{3+}$ and $Dy^{3+}$ doped $BiNbO_4$ phosphors revealed a strong red (613 nm) emission resulting from the $^5D_0{\rightarrow}^7F_2$ transition of $Eu^{3+}$ and a dominant yellow (575 nm) emission originating from the $^4F_{9/2}{\rightarrow}^6H_{13/2}$ transition of $Dy^{3+}$ respectively, which were the electric dipole transitions, indicating that the activator ions occupy sites of non-inversion symmetry in the $BiNbO_4$ phosphor. The main reddish-orange emission spectra of $Sm^{3+}$-doped $BiNbO_4$ phosphors were due to the $^4G_{5/2}{\rightarrow}^6H_{7/2}$ (607 nm) magnetic dipole transition, indicating that the $Sm^{3+}$ ions were located at inversion symmetry sites in the $BiNbO_4$ host lattice. As for $Tb^{3+}$-doped phosphors, green emission was obtained under excitation at 353 nm and its CIE chromaticity coordinates were (0.274, 0.376). These results suggest that multicolor emission can be achieved by changing the type of activator ions incorporated into the $BiNbO_4$ host crystal.

Structural and Luminescent Properties of Gd2WO6:RE3+ (RE = Dy, Sm, Dy/Sm) Phosphors for White Light Emitting Devices (백색광 소자 응용을 위한 Gd2WO6:RE3+ (RE = Dy, Sm, Dy/Sm) 형광체의 구조 및 발광 특성)

  • Park, Giwon;Jung, Jaeyong;Cho, Shinho
    • Journal of the Korean institute of surface engineering
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    • v.53 no.4
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    • pp.131-137
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    • 2020
  • A series of Dy3+, Sm3+, and Dy3+/Sm3+ doped Gd2WO6 phosphors were synthesized by the conventional solid-state reaction. The X-ray diffraction patterns revealed that all of the diffraction peaks could be attributed to the monoclinic Gd2WO6 crystal structure, irrespective of the type and the concentration of activator ions. The photoluminescence (PL) excitation spectra of Dy3+-doped Gd2WO6 phosphors contained an intense charge transfer band centered at 302 nm in the range of 240-340 nm and two weak peaks at 351 and 386 nm. Under an excitation wavelength of 302 nm, the PL emission spectra consisted of two strong blue and yellow bands centered at 482 nm and 577 nm. The PL emission spectra of the Sm3+-doped Gd2WO6 phosphors had a series of three peaks centered at 568 nm, 613 nm, and 649 nm, corresponding to the 6G5/26H5/2, 6G5/26H9/2, and 6G5/26H11/2 transitions of Sm3+, respectively. The PL emission spectra of the Dy3+- and Sm3+-codoped Gd2WO6 phosphors showed the blue and yellow emission lines originating from the 4F9/26H15/2 and 4F9/24H13/2 transitions of Dy3+ and reddish-orange and red emission bands due to the 4G5/26H7/2 and 4G5/26H9/2 transitions of Sm3+. As the concentration of Sm3+ increased from 1 to 15 mol%, the intensities of two PL spectra emitted by the Dy3+ ions gradually decreased, while those of the three emission bands due to the Sm3+ ions slowly increased, thus producing the color change from white to orange. The CIE color coordinates of Gd2WO6:5 mol% Dy3+, 1 mol% Sm3+ phosphors were (0.406, 0.407), which was located in the warm white light region.

Optical Properties of CaYAlO4:Tb3+/Eu3+/Ce3+ Phosphors (CaYAlO4:Tb3+/Eu3+/Ce3+형광체의 광학적 특성 분석)

  • Kang, Taewook;Ryu, Jongho;Kim, Jongsu;Kim, Gwang Chul
    • Journal of the Semiconductor & Display Technology
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    • v.16 no.4
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    • pp.86-90
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    • 2017
  • $Tb^{3+}$ or $Eu^{3+}$ or $Ce^{3+}$-doped $CaYAlO_4$ phosphor were synthesized by solid-state method. $CaYAlO_4:Tb^{3+}$ is shown that the $Tb^{3+}$-doping concentration has a significant effect on the $^5D_4/^5D_3{\rightarrow}7F_J$ (J=6,...,0) emission intensity of $Tb^{3+}$. The $CaYAlO_4:Tb^{3+}$ phosphors show tunable photoluminescence from blue to yellow with the change of doping concentration of $Tb^{3+}$ ions. The $CaYAlO_4:Eu^{3+}$ phosphors exhibit a red-orange emission of $Eu^{3+}$ corresponding to $^5D_0$, $_{1,2}{\rightarrow}^7F_J$ (J=4,...,0) transitions. The $CaYAlO_4:Ce^{3+}$ phosphors show a blue emission due to $Ce^{3+}$ ions transitions from the 5d excited state to the $^2F_{5/2}$ and $^2F_{7/2}$ ground states. The decay time of $CaYAlO_4:Tb^{3+}$ phosphors decrease from 1.33 ms to 0.97 ms as $Tb^{3+}$ concentration increases from 0.1 mol% to 7 mol%. The decay time of $CaYAlO_4:Eu^{3+}$ phosphors increase from 0.94 ms to 1.17 ms as $Eu^{3+}$ concentration increases from 1 mol% to 9 mol%.

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Luminescence Characteristics of Blue and Yellow Phosphor for Near-Ultraviolet (자외선 여기용 청색 및 황색 형광체의 발광특성)

  • Choi, Kyoung-Jae;Park, Joung-Kyu;Kim, Kyung-Nam;Kim, Chang-Hae;Kim, Ho-Kun
    • Journal of the Korean Ceramic Society
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    • v.43 no.5 s.288
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    • pp.304-308
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    • 2006
  • We have synthesized a $Eu^{2+}-activated\;Sr_3MgSi_2O_8$ blue phosphor and $(Sr,Ba)_2SiO_4$ yellow phosphor and prepared white LEDs by combining these phosphors with a InGaN UV LED chip. Three distinct emission bands from the InGaN-based LED and the two phosphors are clearly observed at 405 nm, 460 nm and at around 560 nm, respectively. The 405 nm emission band is due to a radiative recombination from a InGaN active layer. This blue emission was used as an optical transition of the $Sr_3MgSi_2O_8:Eu$ blue phosphor and $(Sr,Ba)_2SiO_4:Eu$ yellow phosphor. The 460 nm and 560 nm emission band is ascribed to a radiative recombination of $Eu^{2+}$ impurity ions in the $Sr_3MgSi_2O_8:Eu$ and $(Sr,Ba)_2SiO_4$ host matrix. As a consequence of a preparation of UV White LED lamp using the $Sr_3MgSi_2O_8:Eu$ blue phosphor and $(Sr,Ba)_2SiO_4:Eu$ yellow phosphor, the highest luminescence efficiency was obtained at the ration of epoxy/two phosphor (1/0.2361). At this time, the CIE chromaticity was CIE x = 0.3140, CIE y = 0.3201 and CCT (6500 K).