• 반도체디스플레이기술학회지
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• 제17권4호
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• pp.37-41
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• 2018

$Y_3A_{l5}O_{12}:Ce^{3+},Pr^{3+}$ single crystal phosphor was prepared by floating zone method. single crystal was confirmed to have a Ia-3d (230) space group of cubic structure and showed regular morphology. The optical properties, single crystal exhibited a emission band from green, yellow wide wavelength and 610nm, 640nm red wavelength vicinity. The luminance maintenance rate was decreased by phonon with increasing temperature, but high luminance is maintained more than powder phosphor. In addition, $Y_3A_{l5}O_{12}:Ce^{3+},Pr^{3+}$ single crystal phosphor was applied to a high power blue laser diode, we implemented high power white laser lightings. and it was confirmed that thermal properties over time, due to the effective heat transfer of complete crystal structure. We confirmed that excellent radiant heat properties than powder phosphor was applied to a high power white laser diode.

• Bulletin of the Korean Chemical Society
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• 제33권8호
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• pp.2523-2528
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• 2012

Green phosphors $(Zn_{1-a-b}M_aM^{\prime}_b)_xGa_yS_{x+3y/2}:Eu^{2+}$ (M, M' = alkali earth ions) with x = 2 and y = 2-5 were prepared, starting from ZnO, MgO, $SrCO_3$, $Ga_2O_3$, $Eu_2O_3$, and S with a flux $NH_4F$ using a conventional solidstate reaction. A phosphor with the composition of $(Zn_{0.6}Sr_{0.3}Mg_{0.1})_2Ga_2S_5:Eu^{2+}$ produced the strongest luminescence at a 460-nm excitation. The observed XRD patterns indicated that the optimized phosphor consisted of two components: zinc thiogallate and zinc sulfide. The characteristic green luminescence of the $ZnS:Eu^{2+}$ component on excitation at 460 nm was attributed to the donor-acceptor ($D_{ZnGa_2S_4}-A_{ZnS}$) recombination in the hybrid boundary. The optimized green phosphor converted 17.9% of the absorbed blue light into luminescence. For the fabrication of light-emitting diode (LED), the optimized phosphor was coated with MgO using magnesium nitrate to overcome their weakness against moisture. The MgO-coated green phosphor was fabricated with a blue GaN LED, and the chromaticity index of the phosphor-cast LED (pc-LED) was investigated as a function of the wt % of the optimized phosphor. White LEDs were fabricated by pasting the optimized green (G) and the red (R) phosphors, and the commercial yellow (Y) phosphor on the blue chips. The three-band pc-WLED resulted in improved color rendering index (CRI) and corrected color temperature (CCT), compared with those of the two-band pc-WLED.

• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2004년도 Asia Display / IMID 04
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• pp.657-659
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• 2004

Trivalent cerium ($Ce^{3+}$) activated yttrium aluminum garnet ($Y_3Al_5O_{12}$, YAG) phosphor thin films were deposited on quartz glass substrates by rf magnetron sputtering. The effects of sputtering parameters and annealing condition on the luminescent properties were investigated. The sputtering parameters were $O_2$/Ar gas ratio, rf power, and deposition time. The films were annealed at 1200 $^{\circ}C$ for 5 hours in $N_2+$vacuum atmosphere. Polycrystalline YAG:Ce thin film phosphor could be obtained with a gas ratio of $O_2$/(Ar+$O_2$)=0.5 after post-annealing. PL spectra excited at 450 nm showed a yellow single band at 550 nm.

• Transactions on Electrical and Electronic Materials
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• 제15권2호
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• pp.69-72
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• 2014

White LEDs, based on blue LED chips coated with a yellow emitting phosphor (YAG:Ce), have several disadvantages. In this paper, we report the improvement in CRI [Color Rendition Index] using $GdAl_5O_{12}:Ce$ (GdAG:Ce) and related phosphors for blue LEDs. A modified combustion synthesis route using mixed fuel was used for synthesis route. By using this procedure, we formed the desired compounds in a single step. LEDs were then fabricated by coating the blue LED chips (CREE 470 nm, 300 micron) with the GdAG:Ce phosphor dispersed in epoxy resin. The CRI typically between 65~70 for the YAG:Ce based LED was improved to 87 for LEDs fabricated from the Gd(Al,Ga)G phosphors.

• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2008년도 International Meeting on Information Display
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• pp.588-590
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• 2008

Yellow-emitting $Y_3Al_5O_{12}$:Ce nanocrystalline phosphor and orange-emitting CdS:Mn/ZnS core/shell quantum dots were prepared by a modified polyol and a reverse micelle chemistry, respectively. To compensate a poor color rendering index of YAG:Ce nanocrystalline phosphor due to the lack of red spectral component, CdS:Mn/ZnS quantum dots were blended into YAG:Ce. Based on spectral evolutions in the blended systems, hybrid white light emitting diodes are fabricated and characterized.

• Journal of the Optical Society of Korea
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• 제14권4호
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• pp.415-419
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• 2010

A phosphor-conversion white light source is demonstrated using an InGaN-based blue laser diode (LD) and a yellow-emitting phosphor excited by the blue LD. The photometric and colorimetric properties of this blue-LD-based white light source are characterized. When injection current of the LD is 100 mA, luminous flux and luminous efficiency of the white light are found to be over 5 lm and 10 lm/W, respectively. When injection current is >90 mA, luminance is estimated to be larger than 10 Mcd/$cm^2$. In addition, color characteristics of the white light such as chromaticity coordinates, a correlated color temperature, and a color rendering index are found to be quite stable as current and temperature of the LD varies. The demonstrated LD-based white light source is expected to be used in high-brightness illumination applications with good color stability.

• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2002년도 International Meeting on Information Display
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• pp.815-818
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• 2002

Mn doped hexagonal phase of ZnS has been studied as a yellow-orange phosphor for the application to fluorescent displays operated at low voltages. It was found that luminescence from $Mn^{2+}$ was increased as the Mn concentration was increased up to1.2 mol% of host lattice. This study has been attempted by adding trivalent ions such as $Al^{3+}$ or $Bi^{3+}$ to ZnS:Mn as an agent to do the efficient incorporation of Mn ions into ZnS:Mn lattice, resulting in a significant improvement in the phosphor performance, especially at low voltages.

• 한국전기전자재료학회논문지
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• 제32권5호
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• pp.387-392
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• 2019

$Dy^{3+}$ and $Eu^{3+}$-co-doped $La_2MoO_6$ phosphor thin films were deposited on sapphire substrates by radio-frequency magnetron sputtering at various growth temperatures. The phosphor thin films were characterized using X-ray diffraction (XRD), scanning electron microscopy, ultraviolet-visible spectroscopy, and fluorescence spectrometry. The optical transmittance, absorbance, bandgap, and photoluminescence intensity of the $La_2MoO_6$ phosphor thin films were found to depend on the growth temperature. The XRD patterns demonstrated that all the phosphor thin films, irrespective of growth temperatures, had a tetragonal structure. The phosphor thin film deposited at a growth temperature of $100^{\circ}C$ indicated an average transmittance of 85.3% in the 400~1,100 nm wavelength range and a bandgap energy of 4.31 eV. As the growth temperature increased, the bandgap energy gradually decreased. The emission spectra under ultraviolet excitation at 268 nm exhibited an intense red emission line at 616 nm and a weak emission line at 699 nm due to the $^5D_0{\rightarrow}^7F_2$ and $^5D_0{\rightarrow}^7F_4$ transitions of the $Eu^{3+}$ ions, respectively, and also featured a yellow emission band at 573 nm, resulting from the $^4F_{9/2}{\rightarrow}^6H_{13/2}$ transition of the $Dy^{3+}$ ions. The results suggest that $La_2MoO_6$ phosphor thin films can be used as light-emitting layers for inorganic thin film electroluminescent devices.

• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2004년도 Asia Display / IMID 04
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• pp.636-639
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• 2004

We have synthesized a $Eu^{2{\cdot}}$ -activated $Sr_3MgSi_2O_8$ blue phosphor and $Ba^{2{\cdot}}$ co-doped $Sr_2SiO_4$ yellow phosphor investigated an attempt to develop white LEDs by combining it with a GaN blue LED chip. Three distinct emission bands from the GaN-based LED and the ($Sr_3MgSi_2O_8$:Eu + $Ba^{2{\cdot}}$ co-doped $Sr_2SiO_4$:Eu) phosphor are clearly observed at 405nm, 455 nm and at around 540 nm, respectively. These three emission bands combine to give a spectrum that appears white to the naked eye. Our results show that GaN (405 nm chip)-based ($Sr_3MgSi_2O_8$:Eu + $Ba^{2{\cdot}}$ co-doped $Sr_2SiO_4$:Eu) exhibits a better luminous efficiency than that of the industrially available product InGaN (460 nm chip)-based YAG:Ce.

• 한국세라믹학회지
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• 제56권1호
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• pp.71-76
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• 2019

Monochromatic amber phosphor in glasses (PiGs) for automotive LED applications were fabricated with $YAG:Ce^{3+}$, $CaAlSiN_3:Eu^{2+}$ phosphors and Pb-free silicate glass. After synthesis and thickness-thinning process, PiGs were mounted on high-power blue LED to make monochromatic amber LEDs. PiGs were simple mixtures of 566 nm yellow YAG, 615 nm red $CaAlSiN_3:Eu^{2+}$ phosphor and transparent glass frit. The powders were uniaxially pressed and treated again through CIP (cold isostatic pressing) at 200 MPa for 20 min to increase packing density. After conventional thermal treatment at $550^{\circ}C$ for 30 min, PiGs were applied by using GPS (gas pressure sintering) to obtain a fully dense PiG plate. As the phosphor content increased, the density of the sintered body decreased and PiGs containing 30 wt% phosphor had full sintered density. Changes in photoluminescence spectra and color coordination were investigated by varying the ratio of $YAG/CaAlSiN_3$ and the thickness of the plates. Considering the optical spectrum and color coordinates, PiG plates with $240{\mu}m$ thickness showed a color purity of 98% and a wavelength of about 605 nm. Plates exhibit suitable optical characteristics as amber light-converting material for automotive LED applications.