• Proceedings of the International Microelectronics And Packaging Society Conference
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• 2001.07a
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• pp.104-109
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• 2001

A 355 nm (3.5 eV) neodymium:yttrium aluminum gamet laser, produced by a harmonic generator, was used to create silver metallic particles as seeds for nucleation in photosensitive glass containing Ag+ and Ce3+ ions. The pulse width and frequency of the laser were 8 ns and 10 Hz, respectively. Heat treatment was conducted at 570 C for 1 h, following laser irradiation, to produce crystalline growth, after which a LiAlSi3O8 crystal phase appeared in the laser-irradiated Li2O A1203 SiO2 glass. For the Present study, we compared the effect of laser-induced crystallization on glass crystallization with that of spontaneous crystallization by heat treatment.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2006.06a
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• pp.12-13
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• 2006

Ferroelectric Cerium-substituted $Bi_4Ti_3O_{12}$ thin films with a thickness of 200 nm were deposited using the liquid delivery metal organic chemical vapor deposition process onto a Pt(111)/Ti/$SiO_2$/Si(100) substrate. At annealing temperature above $600^{\circ}C$, the BCT thin films became crystallized and exhibited a polycrystalline structure. The BCT thin film annealed at $720^{\circ}C$ showed a large remanent polarization ($2P_r$) of $44.56\;{\mu}C/cm^2$ at an applied voltage of 5V. The BCT thin film exhibits a good fatigue resistance up to $1{\times}10^{11}$ switching cycles at a frequency of 1 MHz with applied electric field of ${\pm}5\;V$.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.29 no.3
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• pp.147-151
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• 2016

Graphene has a monolayer crystal structure formed with C-atoms and has been used as a base layer of HETs (hot electron transistors). Graphene HETs have exhibited the operation at THz frequencies and higher current on/off ratio than that of Graphene FETs. In this article, we report on the preliminary results of current characteristics from the HETs which are fabricated utilizing highly doped Si collector, graphene base, and 5 nm thin $Al_2O_3$ tunnel layers between the base and Ti emitter. We have observed E-B forward currents are inherited to tunneling through $Al_2O_3$ layers, but have not noticed the Schottky barrier blocking effect on B-C forward current at the base/collector interface. At the common-emitter configuration, under a constant $V_{BE}$ between 0~1.2V, $I_C$ has increased linearly with $V_{CE}$ for $V_{CE}$ < $V_{BE}$ indicating the saturation region. As the $V_{CE}$ increases further, a plateau of $I_C$ vs. $V_{CE}$ has appeared slightly at $V_{CE}{\simeq}V_{BE}$, denoting forward-active region. With further increase of $V_{CE}$, $I_C$ has kept increasing probably due to tunneling through thin Schottky barrier between B/C. Thus the current on/off ration has exhibited to be 50. To improve hot electron effects, we propose the usage of low doped Si substrate, insertion of barrier layer between B/C, or substrates with low electron affinity.

• Journal of the Korean Ceramic Society
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• v.37 no.6
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• pp.604-611
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• 2000

Glass-ceramics containing a cordierite (2MgO-2Al2O3-5SiO2) as a main crystal phase was prepared from MgO-Al2O3-SiO2 system glass through a controlled 2-step heat treatment for the application to magnetic memory disk substrate for higher storage capacity. Parent glasses prepared with addition of CeO2 as a fulx and TiO2 as a nucleating agent were crystallized by a 2-step heat treatment i.e. nucleation and crystal grwoth. Then the maximum nucleation and crystal growth rates were investigated and several properties such as bending strength, surface hardness and surface roughness were also studied for heat treated glass. As a result, only a $\alpha$-cordierite was precipitated as a main crystal phase for all heat treatment conditions and the maximum nucleation and crystal growth rates were 2.4$\times$109/㎣.hr at 80$0^{\circ}C$ and 0.3${\mu}{\textrm}{m}$/hr at 915$^{\circ}C$ respectively. After being nucleated at 80$0^{\circ}C$ for 5 hours and then crystallized at 915$^{\circ}C$ for 1 hour, the heat treated glass had a crystal volume fraction of 17.6% and crystal size fo 0.3${\mu}{\textrm}{m}$, and showed the optimum properties for the application to magnetic memory disk substrates as follows. ; Bending strength of 192 MPa, Vidkers hardness of 642.1kgf/$\textrm{mm}^2$, and surface roughness of 27$\AA$.

• Proceedings of the Korean Nuclear Society Conference
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• 2004.10a
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• pp.1039-1040
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• 2004

• Proceedings of the Korean Nuclear Society Conference
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• 2005.10a
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• pp.296-297
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• 2005

• Proceedings of the Korea Crystallographic Association Conference
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• 2002.11a
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• pp.42-43
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• 2002

반도체 디바이스의 발전은 높은 직접화 및 동작 속도를 추구하고 있으며, 이를 위해서 MOSFET의 scale down시 발생되는 문제를 해결해야만 한다. 특히, Channel이 짧아짐으로써 발생하는 device의 열화현상으로 동작전압의 조절이 어려워 짐을 해결해야만 하며, gate oxide 두께를 줄임으로써 억제할 수 있다고 알려져 왔다. 현재, gate oxide으로 사용되고 있는 SiO2박막은 비정질로써 ～8.7 eV의 높은 band gap과 Si기판 위에서 성장이 용이하며 안정하다는 장점이 있으나, 두께가 1.6 nm 이하로 얇아질 경우 전자의 direct Tunneling에 의한 leakage current 증가와 gate impurity인 Boron의 channel로의 확산, 그리고 poly Si gate의 depletion effect[1,2] 등의 문제점으로 더 이상 사용할 수 없게 된다. 2001년 ITRS에 의하면 ASIC제품의 경우 2004년부터 0.9～l.4 nm 이하의 EOT가 요구된다고 발표하였다. 따라서, gate oxide의 물리적인 두께를 증가시켜 전자의 Tunneling을 억제하는 동시에 유전막에 걸리는 capacitance를 크게 할 수 있다는 측면에서 high-k 재료를 적용하기 위한 연구가 진행되고 있다[3]. High-k 재료로 가능성 있는 절연체들로는 A1₂O₃, Y₂O₃, CeO₂, Ta₂O, TiO₂, HfO₂, ZrO₂,STO 그리고 BST등이 있으며, 이들 재료 중 gate oxide에 적용하기 위해 크게 두 가지 측면에서 고려해야 하는데, 첫째, Si과 열역학적으로 안정하여 후속 열처리 공정에서 계면층 형성을 배제하여야 하며 둘째, 일반적으로 high-k 재료들은 유전상수에 반비례하는 band gap을 갖는 것으로 알려줘 있는데 이 Barrier Height에 지수적으로 의존하는 leakage current때문에 절연체의 band gap이 낮아서는 안 된다는 점이다. 최근 20이상의 유전상수와 ～5 eV 이상의 Band Gap을 가지며 Si기판과 열역학적으로 안정한 ZrO₂[4], HfiO₂[5]가 관심을 끌고 있다. HfO₂은 ～30의 고유전상수, ～5.7 eV의 높은 band gap, 실리콘 기판과의 열역학적 안전성 그리고 poly-Si와 호환성등의 장점으로 최근 많이 연구가 진행되고 있다. 또한, Hf은 SiO₂를 환원시켜 HfO₂가 될 수 있으며, 다른 silicide와 다르게 Hf silicide는 쉽게 산화될 수 있는 점이 보고되고 있다.

• Economic and Environmental Geology
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• v.40 no.6
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• pp.727-738
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• 2007

The present study investigation the geochemical characteristics of the stream sediments in the Unbong area was conducted to enable a understanding the natural background and a prediction the prospects of geochemical disaster as a result of that bed rocks(mylonitic granites, Kim et al., 1992). We systematically collected seventy three stream sediments samples by wet sieving along the primary channels. Major, trace and rare earth element(REE) concentrations, combined with mineralogical characteristics, were determined by XRD, XRF, ICP-AES and NAA analysis methods. Major element concentrations for the stream sediments in the Unbong area were $SiO_2\;36.94{\sim}65.39wt.%,\;Al_2O_3\;10.15{\sim}21.77wt.%,\;Fe_2O_3\;3.17{\sim}10.90wt.%,\;CaO\;0.55{\sim}5.27wt.%,\;MgO\;0.52{\sim}4.94wt.%,\;K_2O\;1.38{\sim}4.54wt.%,\;Na_2O\;0.49{\sim}3.36wt.%,\;TiO_2\;0.39{\sim}1.27wt.%,\;MnO\;0.04{\sim}0.22wt.%,\;P_2O_5\;0.08{\sim}0.54wt.%$. Trace and REE concentrations for the stream sediments were $Cu\;4.8{\sim}134ppm,\;Pb\;24.2{\sim}82.5ppm,\;Sr\;95.9{\sim}739ppm,\;V\;19.9{\sim}124ppm,\;Zr\;52.9{\sim}145ppm,\;Li\;25.2{\sim}3.3ppm,\;Co\;3.87{\sim}50.0ppm,\;Cr\;17.4{\sim}234ppm,\;Hf\;3.93{\sim}25.2ppm,\;Sc\;4.60{\sim}20.6ppm,\;Th\;3.82{\sim}36.9ppm,\;Ce\;45.7{\sim}243ppm,\;Eu\;0.89{\sim}2.69ppm,\;Yb\;1.42{\sim}5.18ppm$. According to the comparison of average major element concentrations, CaO, $Na_2O\;and\;K_2O$ contents are higher in stream sediments than in bed rocks(mylonitic granites, Kim et al., 1992) $Al_2O_3\;and\;SiO_2$ contents show good correlation both stream sediments and bed rocks(mylonitic granites, Kim et al., 1992). Yb and Eu in the stream sediments show a positive correlation with $SiO_2$. In contrast, the stream sediments display a negative correlation.

• Nuclear Engineering and Technology
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• v.28 no.5
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• pp.458-466
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• 1996

The effects of dopants on the modification of microstructure of UO$_2$ and UO$_2$-4wt%CeO$_2$ sintered pellets have been studied in hydrogen and $CO_2$/CO mixture atmospheres by using $Ta_2O_5$, TiO$_2$ and $Nb_2O_5$ as sintering additives. The dopant were added as oxide powders and homogenized by attrition milling. The mixed powders were pressed, and then sintered in hydrogen at 1$700^{\circ}C$ , or in oxidizing atmosphere using Controlled $CO_2$/CO mixtures at 125$0^{\circ}C$. Both density and microstructure of UO$_2$ are modified by the addition of dopants in reducing atmosphere. The sintered density is increased with $Ta_2O_5$ addition up to 0.33wt% and subsequently decreased with higher content of the additive. The effect on the densification and the gain growth are apparent with the addition of 0.24wt% $Nb_2O_5$. With 0.lwt% titania and 0.6wt% $Ta_2O_5$, the sintered density is decreased, but the grain size is increased. In oxidizing atmosphere, the grain sizes for UO$_2$ doped with the above additives are smaller than that for pure UO$_2$. The grain size of Ta or Nb-doped UO$_2$ is decreased with increasing $CO_2$/CO ratio, but that of pure UO$_2$or T-doped UO$_2$ is increased. A large portion of second phases is observed in UO$_2$ doped with 0.lwt% TiO$_2$ sintered in hydrogen atmosphere, while, in $CO_2$/CO atmospheres, the second phases or dopant agglomerates are not observed. For UO$_2$-4wt%CeO$_2$ mixed oxide, the effect of additives on the gain growth is not so much as that for the pure UO$_2$. This is attributed to the formation of clusters by dopant cations and Ce ions, so that the additives contribute to a lesser exent to the grain growth for the mixed oxide.

• Journal of the Mineralogical Society of Korea
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• v.25 no.4
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• pp.295-304
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• 2012

Ilmenite mine was developed in the anorthosites which intruded Precambrian Jirisan gneiss complex in Wolheongri, Okjong-myeon, Hadong. Ti-ore bodies are confined to the intercumulated type anorthosites, where REE-bearing allanite occurred as veins. The chemistry of allanites shows relatively low in CaO (11.02~12.81 wt%), but high in ${\Sigma}R_2O_3$ (R = Ce, La, Nd) (17.21~21.58 wt%), respectively. Abnormally high radioactive detection ascribes to the presence of small particles of thorium mineral known as thorite ($ThSiO_4$). Thorite shows 65~72.78 wt% ($ThO_2$) and 5.49~12.78 wt% ($UO_2$) in composition. The radioactive prospecting could be a strong tool to find REE-bearing allanite which is closely associated with Ti-ore deposits.