• Journal of the Korean Ceramic Society
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• v.38 no.10
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• pp.881-885
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• 2001

Kinetics and mechanisms of intermediate phases formation in $Ba(Mg_{1/3}Ta_{2/3})O_3$, obtained by a solid state reaction were studied. $Ba{Ta_2}{O_6}$ and ${Ba_4}{Ta_2}{O_9}$ as intermediate products were first formed at $700^{\circ}C$. $Ba(Mg_{1/3}Ta_{2/3})O_3$ was appeared at $800^{\circ}C$. Several reactions take place on heating process. $Ba{Ta_2}{O_6}$ is found at the first stage of the reaction, and then $Ba{Ta_2}{O_6}$ or ${Ba_4}{Ta_2}{O_9}$ react with MgO to form $Ba(Mg_{1/3}Ta_{2/3})O_3$. The reaction of $Ba(Mg_{1/3}Ta_{2/3})O_3$ formation does not complete until fired at $1350^{\circ}C$ for 60 min. The kinetics of solid-state reaction between powdered reactants was controlled by diffusion mechanism, and can be explained by the Jander's model for three-dimensional diffusion.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1999.05a
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• pp.653-656
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• 1999

Effect of $Al_2O_3$ Additives on Microwave Dielectric Properties of $0.15(Ba_{0.85}Ca_{(0.15-y)}Mg_y)$-0.125 $Nd_2O_3-0.60TiO_2+10wt%Bi_zO_3$ (y=0.05, 0.08) Ceramics was investigated. To control of $\tau\;{f}$ on microwave dielectric properties of $0.15(Ba_{0.85}Ca_{(0.15-y)}Mg_y)$-0.125 $Nd_2O_3-0.60TiO_2+10wt%Bi_zO_3$ ceramics $Al_2O_3$ was doped in the composition range of 0 to 0.15 wt%. As a result, dielectric constant was decreased from 94 to 80 but $Q\cdot{f}_0$ value was increased from 4980 to 5210 GHz and temperature coefficient of resonant frequency can be controlled from +9 to -10$ppm^\circ{C}$ as an increase of$Al_2O_3$ doping concentration. Especially, a new microwave dielectric material having $\varepsilon\;_r=84,\;Q\cdot{f}_0=5120\;GHz\;and\;\tau_f=0\;ppm/^\circ{C}$ was obtained at $Al_2O_3$ doping concentration of 0.08 wt%.

• Proceedings of the Korean Environmental Sciences Society Conference
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• 2005.11a
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• pp.192-194
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• 2005

O$_3$/H$_2$O$_2$ 고급산화공정에서 1,4-D의 제거는 반응시간에 따라 완만하게 감소하였으나, O$_3$/catalyst 고급산화공정에서는 전체 제거량의 약 50${\sim}$75%가 반응 초기 5분 내에 제거되어 O$_3$/H$_2$O$_2$ 공정에 비해 초기 반응속도가 현저히 빠른 것을 알 수 있었다. O$_3$/H$_2$O$_2$ 고급산화공정은 ${\Delta}$TOC/${\Delta}$ThOC의 비는 0.09${\sim}$0.40으로 나타났으며, O$_3$/catalyst 고급산화공정에서는 ${\Delta}$TOC/${\Delta}$ThOC의 비가 0.68${\sim}$0.98로 나타나 O$_3$/catalyst 고급산화공정이 O$_3$/H$_2$O$_2$ 고급산화공정에 비해 유기물의 산화력이 우수한 것으로 확인되었다.

• Proceedings of the Korean Ceranic Society Conference
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• 2000.10a
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• pp.66.2-66
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• 2000

• Korean Journal of Materials Research
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• v.11 no.6
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• pp.498-501
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• 2001

The effects of MnO$_2$ addition on the piezoelectric properties in 0.9Pb($Mg_{1/3}Nb_{2/3}$)$O_3$-0.1Pb$TiO_3$ relaxor ferroelectrics were studied in the ferroelectricity-dominated temperature range from -4$0^{\circ}C$ to 3$0^{\circ}C$. Dielectric, piezoelectric properties and electric-field- induced strain were examined to clarify the effect of MnO$_2$ addition. As the added amount of MnO$_2$ increase. dielectric and piezoelectric properties of Pb(Mg$_{1/3}$ Nb$_{2/3}$O$_3$ became harder. From the experimental results, it was suggested that Mn behaves as a ferroelectric domain pinning element.

• Proceedings of the Korean Ceranic Society Conference
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• 2002.10a
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• pp.174.1-174
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• 2002

• Journal of the Korean Vacuum Society
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• v.9 no.3
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• pp.258-262
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• 2000

$YMnO_3$thin films are deposited on Si(100) and $Y_2O_3/Si(100)$ substrate by radio frequency sputtering. The deposition condition of oxygen partial pressure and annealing temperature have significant influences on the preferred orientation of $YMnO_3$film and the size of memory window. The results of x-ray diffraction show that the film deposited in the oxygen partial pressure of 0% is highly oriented along c-axis after annealing at $870^{\circ}C$ for 1 hr in oxygen ambient. However, the films deposited on Si and $Y_2O_3/Si$ in the oxygen partial pressures of 20% show $Y_2O_3$ peak, the excess $Y_2O_3$ in the $YMnO_3$film suppresses the c-axis oriented crystallization. Especially memory windows of the $Pt/YMnO_3/Y_2O_3/Si$ capacitor are 0.67~3.65 V at applied voltage of 2~12 V, which is 3 times higher than that of the film deposited on $Y_2O_3/Si$ in 20% oxygen (0.19~1.21 V) at the same gate voltage because the film deposited in 0% oxygen is well crystallized along c-axis.

• Journal of the Korean Ceramic Society
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• v.26 no.6
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• pp.843-849
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• 1989

Effect of Bi2O3/Li2CO3 on low temperature sinteirng and dielectric property of BaTiO3 ceramics has been investigated. For the specimen sintered at 110$0^{\circ}C$, it was densified to 96% of BaTiO3 theoretical density by the addition of 1.0-1.25w/o Bi2O3/Li2CO3. Maximum dielectric constant increased and Curie temperature lowered with the increase of Bi2O3/Li2CO3 content, which probably can be explained by thne substitution of Bi3+, Li1+ on BaTiO3 lattice. The volatilization of Li1+, resulting from the increase of soaking time at 110$0^{\circ}C$ leads to the increase of Curie temperature and tetragonality of the specimen.

• Proceedings of the Korean Ceranic Society Conference
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• 2002.10a
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• pp.174.2-174
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• 2002

• Applied Chemistry for Engineering
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• v.31 no.1
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• pp.43-48
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• 2020

Fe₂O₃ nanoparticles with the mixed structure of cubic and nanorod were synthesized by precipitation, hydrothermal, sol-gel method, etching process and heat treatment. Fe₂O₃/TiO₂ core-shell (CS) of type Fe₂O₃@TiO₂ composite was fabricated on a 20 nm nanolayer of TiO₂ coated on the surface of Fe₂O₃ nanoparticles. Fe₂O₃/TiO₂ yolk-shell (YS) composite was prepared by chemical etching and heat treatment of Fe₂O₃/TiO₂ CS nanoparticles. Physical properties of Fe₂O₃, Fe₂O₃@TiO₂ CS and Fe₂O₃@TiO₂ YS nanoparticles were characterized by FE-SEM, HR-TEM and X-ray diffraction. The solar reflectance, commission internationale de l'Elcairage (CIE) color coordinate and heat shield temperatures of Fe₂O₃, CS and YS type Fe₂O₃@TiO₂ pigments filled with poly acrylate (PA) paints were investigated by UV-Vis-NIR spectrometer and homemade heat shield temperature measuring device. The Fe₂O₃@TiO₂ YS red pigment filled PA composite exhibited excellent near infrared light reflecting performance and also reduced the heat shield temperature of 13 ℃ than that of Fe₂O₃ filled counterparts.