• Proceedings of the Korean Vacuum Society Conference
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• 2012.02a
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• pp.386-386
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• 2012

We studied a bilateral switching device for spin transfer torque (STT-MRAM) based on 3D device simulation. Metal/P/N+or Metal/N/P+ junction device with $30{\times}30nm2$ area which is composed of one side schottky junction at Metal/P/N+ and Metal/N/P+ provides sufficient bidirectional current flow to write data by a drain induced barrier lowering (DIBL). In this work, Junction device confirmed that write current is more than 30 uA at 2 V, It is also has high on-off ratio over 105 under read operation. Junction device has good process feasibility because metal material of junction device could have been replaced by bottom layer of MTJ. Therefore, additional process to fabricate two outer terminals is not need. so, it provides simple fabrication procedures. it is expected that Metal/P/N+ or Metal/N/P+ structure with one side schottky junction will be a promising switch device for beyond 30 nm STT-MRAM.

• Proceeding of EDISON Challenge
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• 2014.03a
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• pp.409-411
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• 2014

Based on the first-principles computations, the nature of the microscopic geometry of the molecule-electrode contacts was addressed. The single-molecule junction was prepared by connecting hexanediothiolate (HDT) to Au(111) electrodes via one, two, and three Au adatoms having coordination number of one (CN1), two (CN2), and, three (CN3), respectively. The contact atomic structure and energy of the stretched Au-HDT-Au junction was observed. The analysis revealed that the contact geometry with lowest coordination number (CN1) is energetically more stable than CN2 and CN3.

• Progress in Superconductivity
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• v.3 no.1
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• pp.60-64
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• 2001

We have studied properties of step-edge Junction prepared with crystal orientation of sapphire substrate. The Step on sapphire substrates fabricated by conventional photolithography method and Ar ion milling method. $CeO_2$ buffer layer and in-situ YBCO thin film were deposited on the stepped sapphire substrates by a pulsed laser deposition method with the predetermined optimized condition. The step angle was centre fled low angle of about $25^{\circ}$. The YBCO film thickness was varied to obtain various thickness ratios of the film to the step height in a range from 0.7 to 1.2. I-V curves of junction were showed RSJ-behavior, double junction structure, and hysteresis due to the crystal orientation of substrate.

• Journal of Industrial Technology
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• v.13
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• pp.25-31
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• 1993

This paper presents an analysis of microwave device component. An H-Plane waveguide component with arbitrary shape is analyzed using finite element method(FEM) cooperated with boundary element method(BEM). The finite element method(FEM) is applied to the junction region and the boundary element method(BEM) to the waveguide region. For the application of BEM in the waveguide structure, a ray representation of the waveguide Green's function is used. The proposed technique was applied to the analysis of the waveguide inductive junction to compare the numerical result with the result of the mode matching technique. The comparison showed good agreements between the two results. Transmitted powers were also computed in T-junction waveguides for the various shape of the junction area.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.28 no.8
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• pp.496-500
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• 2015

This paper was proposed the theoretical research and optimal design 3000V super junction NPT IGBT for using electrical automotive and power conversion. Because super junction IGBT was showed ultra low on resistance, it was structure that can improve the thermal characteristics of conventional NPT IGBT. The electrical characteristics of super junction NPT IGBT were 2.52 V of on state voltage drop, 4.33 V of threshold voltage and 2,846 V breakdown voltage. We did not obtaing 3,000 V breakdown voltage but we will obtain 3,000 V breakdown voltage through improving p pillar layer. If we are carried this research, This device will be used electrical automotive, power conversiton and high speed train.

• 한국초전도학회:학술대회논문집
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• v.12
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• pp.28-28
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• 2002

• Proceedings of the Korean Society Of Semiconductor Equipment Technology
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• 2007.06a
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• pp.109-112
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• 2007

In this paper we describe a robust method of improving precision in monitoring high energy ion implantation processes. Ion implant energy accuracy was measured in the device manufacturing process using an unpatterned implanted layer on an intrinsic p-type silicon wafer. To increase Rs sensitivity to energy at the well implant process, a PN junction structure was formed by P-well and deep N-well implants into the p-type Si wafer. It was observed that the depletion layer formed by the PN junction was very sensitive to energy variation of the well implant. Conclusively, it can be recommended to monitor well implant processes using the Rs measurement method described herein, i.e., a PN junction diode structure since it shows excellent Rs sensitivity to variation caused by energy difference at the well implant step.

• Genomics & Informatics
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• v.4 no.1
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• pp.33-39
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• 2006

Alternative splicing (AS) is an important mechanism of producing transcriptome diversity and microarray techniques are being used increasingly to monitor the splice variants. There exist three types of microarrays interrogating AS events-junction, exon, and tiling arrays. Junction probes have the advantage of monitoring the splice site directly. Johnson et al., performed a genome-wide survey of human alternative pre-mRNA splicing with exon junction microarrays (Science 302:2141-2144, 2003), which monitored splicing at every known exon-exon junctions for more than 10,000 multi-exon human genes in 52 tissues and cell lines. Here, we describe an algorithm to deduce the relative concentration of isoforms from the junction array data. Non-negative Matrix Factorization (NMF) is applied to obtain the transcript structure inferred from the expression data. Then we choose the transcript models consistent with the ECgene model of alternative splicing which is based on mRNA and EST alignment. The probe-transcript matrix is constructed using the NMF-consistent ECgene transcripts, and the isoform abundance is deduced from the non-negative least squares (NNLS) fitting of experimental data. Our method can be easily extended to other types of microarrays with exon or junction probes.

• Proceedings of the Materials Research Society of Korea Conference
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• 2010.05a
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• pp.30.2-30.2
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• 2010

Nano-scale p-n junction can generate various nano-scale functional devices such as nanowire light emitting diode, nanowire solar cell, and nanowire sensor. The core shell type nanowire p-n junction has been considered for the high efficient devices in many previous reports. On the other hand, although device efficiency is relatively lower, the cross bar type p-n junction has simple topological structure, suggested by C.M. Lieber group, to integrate easily many p-n junction devices in one board. In this study, for the integration of the cross bar nanowire p-n junction device, a simple fabrication route, employed dielectrophoretic array and direct printing techniques, was demonstrated by the successful fabrication and programmable integration of the nanowire cross bar p-n junction solar cell. This direct printing process will give the single nanowire solar cell the opportunity of the integration on the circuit board with other nanowire functional devices.

• Proceedings of the Korean Institute of Building Construction Conference
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• 2005.05a
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• pp.179-183
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• 2005

In apply roof waterproof system using of synthetic high polymer sheet for rooftop measure physical performance (tension$\cdot$tearing ability, temperature relativity, heating stretch performance, junction performance, wind resistance test) by various test environment condition waterproof test of structure and performance of construction work aspect, present suitable form of construction work under these environment. Also, wish to improve durability of concrete structure as that examine in priority about adhesion method and joint junction method with waterproof out surface, and present new direction about roof system application of waterproofing method for rooftop.