• Title/Summary/Keyword: Y-capacitors

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Performance Characteristics of a Coaxial Pulsed Plasma Thruster with Teflon Cavity

  • Edamitsu, Toshiaki;Tahara, Hirokazu;Yoshikawa, Takao
    • Proceedings of the Korean Society of Propulsion Engineers Conference
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    • 2004.03a
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    • pp.577-587
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    • 2004
  • A coaxial pulsed plasma thruster (PPT) with a Teflon cavity was designed, and its performance characteristics were examined varying stored energy, cavity length and capacitance. The PPT was tested as the entire system including the discharge circuit, and the results were explained with both the transfer efficiency and the acceleration efficiency. The transfer efficiency is defined as the fraction of energy in capacitors supplied into plasma, and the acceleration efficiency as the fraction of energy supplied into plasma converted to thrust energy. To estimate these efficiencies, the equivalent plasma resistance was defined and calculated using energy conservation during discharge. The equivalent plasma resistance proportionally increased with cavity length, and therefore the current peak increased with decreasing cavity length. The energy density calculated by the transfer efficiency was increased with decreasing cavity length. As a result, higher acceleration efficiency and lower transfer efficiency were obtained with shorter cavity length. Accordingly, there was an optimal cavity length for the thrust efficiency. The specific impulse and the impulse bit per unit stored energy ranged from 390 s and 50 $\mu$ Ns/J for a cavity length of 34 mm to 825 s and 11 $\mu$ Ns/J for a cavity length of 4 mm when the stored energy was fixed to 21.4J. Thus, it was showed that the performance of this PPT approached that of electromagnetic-acceleration-type PPT with decreasing cavity length. The PPT achieved thrust efficiencies of 10-12% at 21.4 J and 6-7% at 5.35 J at cavity lengths between 14 mm and 29 mm.

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Study for Addition Effect of Propylene Carbonate to 1-ethyl-3-methylimidazolium in Electric Double Layer Capacitors (Propylene Carbonate 첨가된 1-ethyl-3-methylimidazolium의 전기이중층 커패시터에서의 효과)

  • Kim, Hyun-Chul;Yang, Jeong-Jin;Kim, Han-Joo;Sin, Dal-Woo;Park, Soo-Gil
    • Journal of the Korean Electrochemical Society
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    • v.14 no.1
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    • pp.38-43
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    • 2011
  • Because the ionic liquid added with Propylene carbonate(PC) at room temperature has lower viscosity than original, we considered electrochemical behavior of it in EDLC. The ionic liquid without PC which does not have ions has no problem in capacity since it has enough ions. The electrolyte resistance was decreased with decreasing viscosity. As a result of identifying high current discharge capacity, we observed that the ionic liquid had capacity of 73.12% at current density of $80\;mA/cm^{-2}$, but it increased to 81.94% at PC content of 40 vol%.

Compact and Broadband 90° Coupler Using a Metamaterial (메타 물질을 이용한 초소형, 광대역 90° 커플러)

  • Kim, Hong-Joon
    • The Journal of Korean Institute of Electromagnetic Engineering and Science
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    • v.23 no.7
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    • pp.844-847
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    • 2012
  • By using LHTL(Left-Handed Transmission Line) which is a form of a metamaterial and conventional RHTL (Right-Handed Transmission Line), we designed, fabricated and tested a broadband $90^{\circ}$ coupler which is a basic circuit for I-Q vector signal generation. Synthetic LHTL and RHTL were implemented with capacitors and inductors only, that the size is minimized. Also, by implementing a Wilkinson power divider which is required for the suggested circuit using a synthetic RHTL, the size of whole circuit is only $11mm{\times}12mm$. For the frequency range 0.8~1.25 GHz, the phase difference at the outputs maintained $90^{\circ}{\pm}5^{\circ}$ and thus, a broadband $90^{\circ}$ coupler could be made in a compact form. for the same frequency range, the insertion loss is less than 1.6 dB and return loss is more than 10.1 dB. To the best of our knowledge, this is the smallest and broadband $90^{\circ}$ coupler for the frequency range and if the circuit is made with MMIC(Monolithic Microwave Integrated Circuit) technology, the size will be reduced much further.

Study on the structure of buried type capacitor for MCM (Multi-Chip-Module) (MCM-C(Multi-Chip-Module)용 내장형 캐패시터의 구조적 특성에 관한 연구)

  • Yoo, C. S.;Lee, W. S.;Cho, H. M.;Lim, W.;Kwak, S. B.;Kang, N. K.;Park, J. C.
    • Journal of the Microelectronics and Packaging Society
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    • v.6 no.4
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    • pp.49-53
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    • 1999
  • In this study, the characteristics of the structure of buried type capacitor for RF multi- chip-module are investigated. We developed many kinds of structures to minimize the space of capacitor in module and the value of parastic series inductance without any loss in capacitance, and in this procedure the effect of vias especially position, size, number length are analyzed and optimized. This characteristics of structures are checked through HFSS(high frequency structure simulator) of HP, and the value of parastic series inductance is calculated by equivalent circuit analysis. And ensuing the result of simulation, we made buried type capacitors using LTCC (low temperature cofired ceramic) material. In measurement of this sample, we found out the effective and precise method can be applied to buried type and characteristics of vias and striplines added for measuring are quantified.

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A Study on the Development of a System for Measuring Dielectric Hysteresis (유전 히스테리시스 특성 측정장치의 연구 개발)

  • 강대하
    • Journal of the Korean Institute of Illuminating and Electrical Installation Engineers
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    • v.12 no.1
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    • pp.58-68
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    • 1998
  • A computer-controlled system for measuring dielectric hysteresis has been developed. This system consists of the wave generation par\, the high voltage amplifier part, the measurement part, the data acquisition part and the related controll circuits and is interfaced to P.C(personal computer). The applied voltage and its frequency are controlled by P.C . Since the measured datas can be saved in the RAM of P.C, the analysis and the graphics of the datas are very convenient. As a accuracy test, the capcitances of the commercial mica and styroll capacitors were measured by applying high voltage and the results were good agreement with the rating values. In the test of PZT ceramic sample, the typical D-E hysteresis loops were obtained by applying a single frequency voltage to the sample, and $\varepsilon-E$ and D-E hysteresis loops could be measured at the same time by applying a double frequency voltage to the sample.sample.

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Parallel Operation of Voltage Source Inverters by Using Stator Windings of High Power Three-Phase Induction Motors (대전력 3상 유도전동기의 고정자권선을 이용한 전압원 인버터의 병렬운전)

  • 김인동;노의철;전성즙
    • Journal of the Korea Institute of Information and Communication Engineering
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    • v.8 no.4
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    • pp.815-820
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    • 2004
  • The parallel operation of voltage source inverters using stator windings of high power three-phase induction motors was proposed in this paper. Most current high power induction motors with more than 4 electric poles have their external terminals installed so that windings of each phase can be approached from the outside. High power induction motors can be driven by parallel-operating several voltage source inverters through these external terminals. This way, in case a certain inverter breaks down, the operation torque will get decreased but the system can maintain its operation with the other inverters, so it can cope more effectively with breakdowns. Moreover, by providing phase difference to the switching movements of each inverter, it can increase equivalent switching frequency, which helps achieve good characteristics such as the reduction in the ripple of output torque, the reduction in the ripple of input current, and the reduction in the size of DC capacitors. Besides, since power is divided into each inverter, it can also decrease the ifluence of EMI occurring in the system. The characteristics of the proposed method were proved through computer simulations in this paper.

Sustain Driver and Reset Circuit for Plasma Display (플라즈마 디스플레이를 위한 서스테인 및 리셋 회로)

  • Kang, Feel-Soon;;Park, Jin-Hyun
    • Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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    • v.9 no.2
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    • pp.685-688
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    • 2005
  • An efficient sustain driver and a useful reset circuit composition technique are proposed for plasma display panel drive. The proposed sustain driver uses a series resonance between an external inductor and a panel to recover the energy dissipated by a capacitive displacement current of PDP. It consists of four switching devices, an inductor, and external capacitors, which supply sustain voltage sources. Although the amplitude of an input voltage source is twice as high as that of conventional sustain drivers, average voltage stress imposed on power switching devices is nearly same in their values. Moreover, the input voltage source can be directly applied for the use of a reset voltage source. Owing to this scheme, the proposed sustain driver and the embedded reset circuit have a simple configuration. The operational principle and design example are given with theoretical analyses. The validity of the proposed drive system is verified through experiments using a prototype equipped with a 7.5-inch-diagonal AC plasma display panel.

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The Switching Characteristic and Efficiency of New Generation SiC MOSFET (차세대 전력반도체 SiC MOSFET의 스위칭 특성 및 효율에 관한 연구)

  • Choi, Won-mook;Ahn, Ho-gyun
    • Journal of the Korea Institute of Information and Communication Engineering
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    • v.21 no.2
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    • pp.353-360
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    • 2017
  • Recently, due to physical limitation of Si based power semiconductor, development speed of switching power semiconductors is falling and it is difficult to expect any further performance improvements. SiC based power semiconductor with superior characteristic than Si-based power semiconductor have been developed to overcome these limitations. however, there is not method to apply for real system. Therefore, suggested the feasibility and solution for SiC-based power semiconductor system. design to 1kW class DC-DC boost converter and demonstrated the superiority of SiC MOSFET under the same operating conditions by analyzing switching frequency, duty ratio, voltage and current, and comparing with Si based power semiconductor through experimental efficiency according to each system load. The SiC MOSFET has high efficiency and fast switching speed, and can be designed with small inductors and capacitors which has the advantage of volume reduction of the entire system.

A Study on Bottom E1ectrode for Ferroelectric Thin Film Capacitors (강유전체 박막 커패시터 하부전극에 관한 연구)

  • 임동건;정세민;최유신;김도영;이준신
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 1997.11a
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    • pp.364-368
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    • 1997
  • We have investigated Pt and RuO$_2$as a bottom electrode for a device application of PZT thin film. The bottom electrodes were prepared by using an RF magnetron sputtering method. We studied some of the property influencing factors such as substrate temperature, gas flow rate, and RF power. An oxygen partial pressure from 0 to 50% was investigated. The results show that only Ru metal was grown without supp1ying any O$_2$gas. Both Ru and RuO$_2$phases were formed for O$_2$partial pressure between 10∼40%. A Pure RuO$_2$ phase was obtained with O$_2$partial pressure of 50%. A substrate temperature from room temperature to 400$^{\circ}C$ was investigated with XRD for the film crystallinity examination. The substrate temperature influenced the surface morphology and the resistivity of Pt and RuO$_2$as well as the film crystal structure. From the various considerations, we recommend the substrate temperature of 300$^{\circ}C$ for the bottom electrode growth. Because PZT film growth on top of bottom electrode requires a temperature process higher than 500$^{\circ}C$, bottom electrode properties were investigated as a function of post anneal temperature. As post anneal temperature was increased, the resistivity of Pt and RuO$_2$was decreased. However, almost no change was observed in resistivity for an anneal temperature higher than 700$^{\circ}C$. From the studies on resistivity and surface morphology, we recommend a post anneal temperature less than 600$^{\circ}C$.

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Influences of Plasma Treatment on the Electrical Characteristics of rf-magnefrom sputtered $BaTa_2O_6$ Thin Films (플라즈마 표면 처리가 $BaTa_2O_6$박막의 전기적 특성에 미치는 효과에 관한 연구)

  • Kim, Young-Sik;Lee, Yun-Hi;Ju, Byeong-Kwon;Sung, Mang-Young;Oh, Myung-Hwan
    • The Transactions of the Korean Institute of Electrical Engineers C
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    • v.48 no.5
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    • pp.319-325
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    • 1999
  • Direct current(d.c.)leakage current voltage characteristics of radio-frequencymagnetron sputtered BaTa\sub 2\O\sub 6\ film capacitors with aluminum(A1) top and indium tin oxide (ITO) bottom electrodes have been investigatedas a function of applied field and temperature. In order to study surfacetreatment effect on the electrical characteristics of as-deposited film weperformed exposure of oxygen plasma on $BaTa_2O_6$ surface. d. c.current-voltage (I-V), bipolar pulse charge-voltage (Q-V), d. c. current-time (I-t) andcapacitance-frequency (C-f) analysis were performed on films. All ofthe films exhibita low leakage current, a high breakdown field strength (3MV/cm-4.5MV/cm), and high dielectric constant (20-30). From the temperature dependence of leakage current,we can conclude that the dominant conduction mechanism is ascribed toSchottky emission at high electric field (>1MV/cm) and hopping conduction at lowelectric field (<1MV/cm). According to our results, the oxide plasma surfacetreatmenton as-deposited $BaTa_2O_6$ resulted in lowering interfacebarrier height and thus, leakage current when a negative voltage applied to the A1 electrode. This can be explained by reduction of surface contamination via etching surface and filling defects such as oxygen vacancies.

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