• Journal of the Korean Institute of Telematics and Electronics A
• /
• v.31A no.5
• /
• pp.94-100
• /
• 1994

The junction failure mechanism of W plugs has not been fully understood while the selective W deposition has been widely used for plugging interconnection lines. In this paper, the thermal stability and junction failure mechanism of sub-micron contacts using selective CVD-W plugs were intensively studied with the metal lines of AISiCu, Ti/AISiCu and TiN/AISiCu. The experimental results showed that the contact chain resistance and leakage current in the AISiCu and Ti/AISiCu metallizations were significantly degraded after annealing. From the SEM analysis, it was found that the junction spiking, due to the Al atoms diffusion along the porous interface between selective CVD-W and contactside wall, caused the junction failure. In constast, there was no degradation of the contact resistance and junction leakage current in TiN/AISiCu metal structu-re. It is believed that the TiN barrier layer could prevent AI(Ti) atoms Fromdiffusing. Therefore, TiN barrier between W plug and Al should be used to impro-ve the thermal stability of sub-micron contacts using the selective CVD-W plugs.

• Journal of Advanced Marine Engineering and Technology
• /
• v.36 no.1
• /
• pp.51-56
• /
• 2012

This paper reports the generation efficiency and the thermal performance of a thermoelectric generator (TEG) harvesting energy from the waste heat of high power electronic components. A thermoelectric (TE) model containing thermal boundary resistances is used to predict generation efficiency and junction temperature of a high power electronic component. The predicted results are verified with measured values, and the discrepancy between prediction and measurement is seen to be moderate. The verified TE model predicts generation efficiencies, junction temperatures of the component, and temperature differences across a TEG at various source heat flows associated with various electrical load resistances. This study explores effects of the load resistance on the generation efficiency, the temperature difference across a TEG, and the junction temperature.

• Journal of IKEEE
• /
• v.18 no.4
• /
• pp.532-535
• /
• 2014

This paper analyzed thermal characteristics of super junction MOSFET using process and design parameters. Trench process is very important to super junction MOSFET process. We analyzed the difference of temperature, thermal resistance, total power consumption according to trench etch angle. As a result we obtained minimum value of temperature difference and thermal resistance at $89.3^{\circ}$ of trench etch angle. The electrical characteristics distribution of super junction MOSFET is not showed tendency according to trench etch angle. We need iterative experiments and simulation for optimal value of electrical characteristics. The super junction power MOSFET that has superior thermal characteristics will use automobile and industry.

• Journal of Korea Multimedia Society
• /
• v.13 no.3
• /
• pp.392-399
• /
• 2010

The Automobile has developed and changed through the years from the invention and increased human-being's scope of activity. Junction Box, one of the part of automobile, is inspected by human eyes which caused mistakes and slow progress. To achieve the speed and accuracy the system was compensated by vision system which is inspecting automatically. This paper is automatic inspection of fuse and relay which is inserted in the junction box by checking the color and pattern of the cover. After checking the performance of the system by using the junction box, the result was 100 percent perception and open the possibility to inspect junction box fast and easy and accurate if it is applied to the industry.

• Journal of Welding and Joining
• /
• v.16 no.2
• /
• pp.111-121
• /
• 1998

It is well recognized that a excessive temperature gradient from the junction of head to skirt in axial direction in a hot pressure vessel can cause unpredicted high thermal stress at the junction and/or in axial direction of a skirt. this thermal stress resulting from axial thermal gradient may be a major cause of unsoundness of structural integrity. In case of cyclic operation of hot pressure vessels, the thermal stress becomes one of the primary design consideration because of the possibility of fracture as a result of cyclic thermal fatigue and progressively incremental plastic deformation. To perform thermal stress analysis of the junction and cylindrical skirt of a vessel, or, at least, to inspect quantitatively the magnitude and effect of thermal stress, the temperature profile of the vessel and skirt must be known. This paper demonstrated the temperature distribution and thermal stress analysis for the junction of skirt to head using F.E. analysis. Effect of air pocket in crotch space was quantitatively investigated to minimize the temperature gradient causing the thermal stress in axial direction. Effect of the skirt height on thermal stresses was also studied. Analysis results were compared with theoretical formulas to verify th applicability to the strength calculation in design field.

• Proceedings of the Korean Vacuum Society Conference
• /
• 2012.02a
• /
• pp.385-385
• /
• 2012

A two terminal N+/P/N+ junction device to replace the conventional selective transistor was studied as a bilateral switching device for spin transfer torque (STT) MRAM based on 3D device simulation. An N+/P/N+ junction structure with $30{\times}30nm$ area requires bi-directional current flow enough to write a data by a drain induced barrier lowering (DIBL) under a reverse bias at N+/P (or P/N+ junction), and high current on/off ratio of 106. The SiGe materials are widely used in hetero-junction bipolar transistors, bipolar compensation metal-oxide semiconductors (BiCMOS) since the band gap of SiGe materials can be controlled by changing the fraction and the strain epilayers, and the drift mobility is increased with the increasing Ge content. In this work, N+/P/N+ SiGe material based junction provides that drive current is increased from 40 to $130{\mu}A$ by increased Ge content from 10~80%. When Ge content is about 20%, the drive current density of SiGe device substantially increased to 2~3 times better than Si-based junction device in case of 28 nm P length, which is sufficient current to operation of STT-MRAM.

• The Korean Journal of Pain
• /
• v.10 no.2
• /
• pp.254-257
• /
• 1997

Ganglion impar lies immediately anterior to the sacrococcygeal junction and blockade of the ganglion is used to treat anorectal and perineal pain. Although the technique introduced by Plancarte et at is widely practised, the bent needle is sometimes difficult to position precisely and patients find the procedure painful. We modified this approach of block of ganglion impar by positioning the needle into the sacrococcygeal junction and using the loss of resistance technique. With the patient in the lateral position, a skin wheal was raised at 1-1.5cm below the sacral hiatus. Twenty-three gauge short needle was directly placed into the sacrococcygeal junction with aid of fluoroscopic guidance. From 1 cm behind the anterior margin of the vertebral body in lateral view, we used the loss of resistance technique to confirm the retroperitoneal space. We found this modified approach easier to perform during six blocks for three patients with anorectal or perineal pain. Our modified approach through the sacrococcygeal junction may provide opportunity for wider administration of this procedure because of its simple technique, reduced pain during procedure and decreased risk of infection.

• Journal of the Korean Association of Oral and Maxillofacial Surgeons
• /
• v.32 no.2
• /
• pp.161-167
• /
• 2006

Objectives: Pericoronitis was the most common indication for mandibular third molar surgery and there are no universally acceptable predictive criteria for pericoronitis occurrence. This study was designed to analyze the correlation of the pericoronitis and the eruption state of the mandibular third molar using panoramic radiographs statistically. Materials and Methods: 218 patients whose chief complaint was the extraction of the mandibular third molar were examined. The presence and absence of pericoronitis, age, sex, position of extraction site, angulation, impaction degree, position to the anterior border of mandibular ramus, distance between distal cementoenamel junction of second molar and mesial cementoenamel junction of the mandibular third molar were assessed. Then the correlation of pericoronitis and the eruption state of the mandibular third molar were analyzed by Student's t-test and chi-square test. Results: There was no correlation between Pericoronitis and age, sex, position of the mandibular third molar. The angulation(P=0.005), impaction degree(P=0.043), relation with anterior border of mandibular ramus(P=0.003), distance between distal cementoenamel junction of second molar and mesial cementoenamel junction of the mandibular third molar(P<0.05) were correlated with pericoronitis. Conclusions: The occurrence of the pericoronitis can be predicted by the eruption state of the mandibular third molar such as angulation, impaction degree, relation with anterior border of mandibular ramus, distance between distal cementoenamel junction of second molar and mesial cementoenamel junction of third molar.

• Journal of the Korea Academia-Industrial cooperation Society
• /
• v.10 no.6
• /
• pp.1180-1185
• /
• 2009

In this paper, the Low Pass Filter (LPF) using the equivalent circuit of T-junction microstrip line is proposed. And we derived the formulas for lumped-elements of the equivalent circuit of T-junction microstrip line to solve the frequency shift characteristic. T-junction microstrip line is de-embedded by Electromagnetic simulation tool and exact lumped element value of T-junction microstrip line is calculated by the equation of Z-parameter. We can get excellent agreement between lumped-element LPF frequency response and transmission line LPF frequency response.

• Journal of Magnetics
• /
• v.8 no.2
• /
• pp.89-92
• /
• 2003

The tunneling magnetoresistance (TMR) of a ramp-edge type junction with SrTiO$_3$barrier layer has been stud-ied. The samples with a structure of glass/NiO(600${\AA}$)/Co(100${\AA}$)/SrTiO$_3$(400 ${\AA}$)/SrTiO$_3$(20-100${\AA}$)/NiFe(100${\AA}$) were prepared by the sputtering and etched by the electron cyclotron (ECR) argon ion milling. Nonlinear I-V characteristics were obtained from a ramp-type tunneling junctions, having the dominant difference between two different external magnetic fields (${\pm}$100 Oe) perpendicular to the junction edge line. In the SrTiO$_3$ barrier thickness of 40${\AA}$, the TMR was 52.7% at a bias voltage of -50 mV The bias voltage dependence of resistance and TMR in a ramp-type tunneling junction was similar with those of the layered TMR junction.