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DC 마그네트론 스파터링의 비대칭 자석강조에 의한 ITO 박막 제조 및 물성에 관한 연구 (A Study on Material Properties and Fabrication of ITO Thin Films by Unbalanced-Magnet Structure in Magnetron Sputtering)

  • 신성호;김현후;박광자
    • E2M - 전기 전자와 첨단 소재
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    • 제10권7호
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    • pp.700-705
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    • 1997
  • Transparent conducting indium tin oxide (TC-ITO) thin films are deposited on soda lime glass by a dc magnetron sputtering technique having the unbalanced-magnet structure in order to improve the electrical/material characteristics and to avoid the surface damages. The material properties are measured by the x-ray diffractometer (XRD) and atomic force microscope (AFM). The (400) peak as the preferred orientation of <100> direction for ITO thin films is stabilized with the increase of substrate temperature. The surface roughness estimated by AFM 3D image at the substrate temperature of 40$0^{\circ}C$ is extremely uniform. The best resistivity of ITO films (5500 $\AA$ thick) at 40$0^{\circ}C$ is about 1.3$\times$10$^{-4}$ $\Omega$cm on the position of 4 cm from substrate center.

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