• Title/Summary/Keyword: XPS(X-ray Photoelectron Spectroscopy)

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Synthesis of MnO2 Nanowires by Hydrothermal Method and their Electrochemical Characteristics (수열합성법을 이용한 망간 나노와이어 제조 및 이의 전기화학적 특성 연구)

  • Hong, Seok Bok;Kang, On Yu;Hwang, Sung Yeon;Heo, Young Min;Kim, Jung Won;Choi, Bong Gill
    • Applied Chemistry for Engineering
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    • v.27 no.6
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    • pp.653-658
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    • 2016
  • In this work, we developed a synthetic method for preparing one-dimensional $MnO_2$ nanowires through a hydrothermal method using a mixture of $KMnO_4$ and $MnSO_4$ precursors. As-prepared $MnO_2$ nanowires had a high surface area and porous structure, which are beneficial to the fast electron and ion transfer during electrochemical reaction. The microstructure and chemical structure of $MnO_2$ nanowires were characterized by scanning electron microscopy, transmission electron microscopy, X-ray photoelectron spectroscopy, X-ray diffraction, and Brunauer-Emmett-Teller measurements. The electrochemical properties of $MnO_2$ nanowire electrodes were also investigated using cyclic voltammetry and galvanostatic charge-discharge with a three-electrode system. $MnO_2$ nanowire electrodes showed a high specific capacitance of 129 F/g, a high rate capability of 61% retention, and an excellent cycle life of 100% during 1000 cycles.

Nanocrystalline Si formation inside SiNx nanostructures usingionized N2 gas bombardment (이온화 N2 가스 입사를 이용한 SiNx 나노구조 내부의 Si 나노결정 형성)

  • Jung, Min-Cherl;Park, Young-Ju;Shin, Hyun-Joon;Byun, Jun-Seok;Yoon, Jae-Jin;Park, Yong-Sup
    • Journal of the Korean Vacuum Society
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    • v.16 no.6
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    • pp.474-478
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    • 2007
  • Nanostructures of $SiN_x$ were made by bombardment of ionized $N_2$ on Si surface and subsequent annealing. Atomic force micrograph showed the density of $SiN_x$ nanostructures was $3\times10^{10}/cm^2$. Their lateral size and height were 40$\sim$60 nm and 15 nm, respectively. The chemical state of the nanostructure was measured using X-ray photoelectron spectroscopy, which changed from $SiN_x$ to $Si_3N_4\;+\;SiN_x$ as the bombarding ionized gas current increases. Upon annealing, transmission electron micrograph showed a clear evidence for crystalline Si phase formation inside the $SiN_x$ nanostructures. Photoluminescence peak observed at around 400nm was thought to be originated from the interface states between the nanocrystalline Si and surrounding $SiN_x$ nanostructures.

Characteristics of SiO2/Si Quantum Dots Super Lattice Structure Prepared by Magnetron Co-Sputtering Method (마그네트론 코스퍼터링법으로 형성한 SiO2/Si 양자점 초격자 구조의 특성)

  • Park, Young-Bin;Kim, Shin-Ho;Ha, Rin;Lee, Hyun-Ju;Lee, Jung-Chul;Bae, Jong-Seong;Kim, Yang-Do
    • Korean Journal of Materials Research
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    • v.20 no.11
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    • pp.586-591
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    • 2010
  • Solar cells have been more intensely studied as part of the effort to find alternatives to fossil fuels as power sources. The progression of the first two generations of solar cells has seen a sacrifice of higher efficiency for more economic use of materials. The use of a single junction makes both these types of cells lose power in two major ways: by the non-absorption of incident light of energy below the band gap; and by the dissipation by heat loss of light energy in excess of the band gap. Therefore, multi junction solar cells have been proposed as a solution to this problem. However, the $1^{st}$ and $2^{nd}$ generation solar cells have efficiency limits because a photon makes just one electron-hole pair. Fabrication of all-silicon tandem cells using an Si quantum dot superlattice structure (QD SLS) is one possible suggestion. In this study, an $SiO_x$ matrix system was investigated and analyzed for potential use as an all-silicon multi-junction solar cell. Si quantum dots with a super lattice structure (Si QD SLS) were prepared by alternating deposition of Si rich oxide (SRO; $SiO_x$ (x = 0.8, 1.12)) and $SiO_2$ layers using RF magnetron co-sputtering and subsequent annealing at temperatures between 800 and $1,100^{\circ}C$ under nitrogen ambient. Annealing temperatures and times affected the formation of Si QDs in the SRO film. Fourier transform infrared spectroscopy (FTIR) spectra and x-ray photoelectron spectroscopy (XPS) revealed that nanocrystalline Si QDs started to precipitate after annealing at $1,100^{\circ}C$ for one hour. Transmission electron microscopy (TEM) images clearly showed SRO/$SiO_2$ SLS and Si QDs formation in each 4, 6, and 8 nm SRO layer after annealing at $1,100^{\circ}C$ for two hours. The systematic investigation of precipitation behavior of Si QDs in $SiO_2$ matrices is presented.

The surface kinetic properties of $ZrO_2$ Thin Films in dry etching by Inductively Coupled Plasma

  • Yang-Xue, Yang-Xue;Kim, Hwan-Jun;Kim, Dong-Pyo;Um, Doo-Seung;Woo, Jong-Chang;Kim, Chang-Il
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2009.06a
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    • pp.105-105
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    • 2009
  • $ZrO_2$ is one of the most attractive high dielectric constant (high-k) materials. As integrated circuit device dimensions continue to be scaled down, high-k materials have been studied more to resolve the problems for replacing the EY31conventional $SiO_2$. $ZrO_2$ has many favorable properties as a high dielectric constant (k= 20~25), wide band gap (5~7 eV) as well as a close thermal expansion coefficient with Si that results in good thermal stability of the $ZrO_2/Si$ structure. In order to get fine-line patterns, plasma etching has been studied more in the fabrication of ultra large-scale integrated circuits. The relation between the etch characteristics of high-k dielectric materials and plasma properties is required to be studied more to match standard processing procedure with low damaged removal process. Due to the easy control of ion energy and flux, low ownership and simple structure of the inductively coupled plasma (ICP), we chose it for high-density plasma in our study. And the $BCl_3$ included in the gas due to the effective extraction of oxygen in the form of $BCl_xO_y$ compound In this study, the surface kinetic properties of $ZrO_2$ thin film was investigated in function of Ch addition to $BCl_3/Ar$ gas mixture ratio, RF power and DC-bias power based on substrate temperature. The figure 1 showed the etch rate of $ZrO_2$ thin film as function of gas mixing ratio of $Cl_2/BCl_3/Ar$ dependent on temperature. The chemical state of film was investigated using x-ray photoelectron spectroscopy (XPS). The characteristics of the plasma were estimated using optical emission spectroscopy (OES). Auger electron spectroscopy (AES) was used for elemental analysis of etched surface.

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A Study on Mechanical Interfacial Properties of Copper-plated Carbon Fibers/Epoxy Resin Composites (구리도금된 탄소섬유/에폭시 수지 복합재료의 기계적 계면 특성에 관한 연구)

  • Hong, Myung-Sun;Bae, Kyong-Min;Choi, Woong-Ki;Lee, Hae-Seong;Park, Soo-Jin;An, Kay-Hyeok;Kim, Byung-Joo
    • Applied Chemistry for Engineering
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    • v.23 no.3
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    • pp.313-319
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    • 2012
  • In this work, the electroplating of copper was introduced on PAN-based carbon fibers for the enhancement of mechanical interfacial strength of carbon fibers-reinforced composites. The surface properties of carbon fibers were determined by scanning electron microscopy (SEM), X-ray photoelectron spectroscopy (XPS), X-ray diffraction (XRD), and contact angle measurements. Its mechanical interfacial properties of the composites were studied by interlaminar shear strength (ILSS) and critical stress intensity factor ($K_{IC}$). From the results, it was found that the mechanical interfacial properties of Cu-plated carbon fibers-reinforced composites (Cu-CFRPs) enhanced with increasing the Cu plating time, Cu content and COOH group up to Cu-CFRP-30. However, the mechanical interfacial properties of the Cu-CFRPs decreased dramatically in the excessively Cu-plated CFRPs sample. In conclusion, the presence of Cu particles on carbon fiber surfaces can be a key factor to determine the mechanical interfacial properties of the Cu-CFRPs, but the excessive Cu content can lead the failure due to the interfacial separation between fibers and matrices in this system.

Effects of Anodic Voltages of Photcatalytic TiO2 and Doping in H2SO4 Solutions on the Photocatalytic Activity (광촉매 TiO2의 황산용액에서의 양극산화전압과 도핑이 광촉매 활성에 미치는 영향)

  • Lee, Seung-Hyun;Oh, Han-Jun;Chi, Choong-Soo
    • Korean Journal of Materials Research
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    • v.22 no.8
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    • pp.439-444
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    • 2012
  • To compare the photocatalytic performances of titania for purification of waste water according to applied voltages and doping, $TiO_2$ films were prepared in a 1.0 M $H_2SO_4$ solution containing $NH_4F$ at different anodic voltages. Chemical bonding states of F-N-codoped $TiO_2$ were analyzed using surface X-ray photoelectron spectroscopy (XPS). The photocatalytic activity of the co-doped $TiO_2$ films was analyzed by the degradation of aniline blue solution. Nanotubes were formed with thicknesses of 200-300 nm for the films anodized at 30 V, but porous morphology was generated with pores of 1-2 ${\mu}m$ for the $TiO_2$ anodized at 180 V. The phenomenon of spark discharge was initiated at about 98 V due to the breakdown of the oxide films in both solutions. XPS analysis revealed the spectra of F1s at 684.3 eV and N1s at 399.8 eV for the $TiO_2$ anodized in the $H_2SO_4-NH_4F$ solution at 180 V, suggesting the incorporation of F and N species during anodization. Dye removal rates for the pure $TiO_2$ anodized at 30 V and 180 V were found to be 14.0% and 38.9%, respectively, in the photocatalytic degradation test of the aniline blue solution for 200 min irradiation; the rates for the F-N-codoped $TiO_2$ anodized at 30 V and 180 V were found to be 21.2% and 65.6%, respectively. From the results of diffuse reflectance absorption spectroscopy (DRS), it was found that the absorption edge of the F-N-codoped $TiO_2$ films shifted toward the visible light region up to 412 nm, indicating that the photocatalytic activity of $TiO_2$ is improved by appropriate doping of F and N by the addition of $NH_4F$.

Studies on Thermal and Dynamic Viscoelastic Behaviors of Multiwalled Carbon Nanotubes-reinforced Epoxy Matrix Composites (다중벽 탄소나노튜브강화 에폭시 매트릭스 복합재료의 열적 및 동적 점탄성 거동 연구)

  • Seo, Min-Kang;Park, Soo-Jin
    • Korean Chemical Engineering Research
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    • v.43 no.3
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    • pp.401-406
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    • 2005
  • In this work, the effect of chemical treatment of multiwalled carbon nanotubes (MWNTs) on glass transition temperature (Tg), thermal stability, and dynamic viscoelastic behaviors of MWNTs-reinforced epoxy matrix composites has been studied by differencial scanning calorimeter (DSC), thermogravimetric analysis (TGA), and dynamic mechanical analysis (DMA) measurements. The MWNTs were chemically treated with 35 wt% $H_3PO_4$ (A-MWNTs) or 35 wt% KOH (B-MWNTs) solutions and the changes of surface properties of chemically treated MWNTs were examined by pH, acid and base values, Fourier transfer-infrared spectroscopy (FT-IR), and x-ray photoelectron spectroscopy (XPS) analyses. The chemical treatments based on acid and base reactions led to a significant change of surface characteristics and chemical compositions of the MWNTs, especially A-MWNTs/epoxy composites had higher thermal stability and dynamic viscoelastic properties than those of B-MWNTs and non-treated MWNTs/epoxy composites. These results were probably due to the improvement of interfacial bonding strength, resulting from the acid-base interaction and hydrogen bonding between the epoxy resins and the MWNT fillers.

Effect of Deposition Temperature on the Characteristics of Low Dielectric Fluorinated Amorphous Carbon Thin Films (증착온도가 저유전 a-C:F 박막의 특성에 미치는 영향)

  • Park, Jeong-Won;Yang, Sung-Hoon;Park, Jong-Wan
    • Korean Journal of Materials Research
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    • v.9 no.12
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    • pp.1211-1215
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    • 1999
  • Fluorinated amorphous carbon (a-C:F) films were prepared by an electron cyclotron resonance chemical vapor deposition (ECRCVD) system using a gas mixture of $C_2F_6$ and $CH_4$ over a range of deposition temperature (room temperature ~ 300$^{\circ}C$). 500$^{\AA}C$ thick DLC films were pre-deposited on Si substrate to improve the strength between substrate and a-C:F film. The chemical bonding structure, chemical composition, surface roughness and dielectric constant of a-C:F films deposited by varying the deposition temperature were studied with a variety of techniques, such as Fourier transform infrared spectroscopy(FTIR), X-ray photoelectron spectroscopy(XPS), atomic force microscopy (AFM) and capacitance-voltage(C-V) measurement. Both deposition rate and fluorine content decreased linearly with increasing deposition temperature. As the deposition temperature increased from room temperature to 300$^{\circ}C$, the fluorine concentration decreased from 53.9at.% down to 41.0at.%. The dielectric constant increased from 2.45 to 2.71 with increasing the deposition temperature from room temperature to 300$^{\circ}C$. The film shrinkage was reduced with increasing deposition temperature. This results ascribed by the increased crosslinking in the films at the higher deposition temperature.

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The Effect of Structure and Acidity of Fluorinated HZSM-5 on Ethylene Aromatization (불소화 HZSM-5의 구조 및 산도가 에틸렌 방향족화에 미치는 영향)

  • Kyeong Nan, Kim;Seok Chang, Kang;Geunjae, Kwak
    • Applied Chemistry for Engineering
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    • v.34 no.1
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    • pp.15-22
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    • 2023
  • Recent studies have actively investigated ways to improve the economic feasibility and efficiency of the Fischer-Tropsch process by increasing the yields of the monocyclic aromatic compounds (BTEX). In this study, ethylene was selected as a model of F-T-derived hydrocarbons, and the ethylene-to-aromatics (ETA) reaction was investigated according to changes in acid characteristics, mesopores, and crystallinity of HZSM-5 (HZ5). Fluorinated HZ5 was prepared by calcination followed by impregnation of an aqueous NH4F solution having different molar concentrations in HZ5, and the structural and chemical properties of F/HZ5 were investigated through Brunauer-Emmett-Teller (BET), solid-state nuclear magnetic resonance (NMR), X-ray photoelectron spectroscopy (XPS), NH3-temperature-programmed desorption (TPD), and pyridine-IR spectroscopy. The ETA reactions were performed at 673 K under 0.1 MPa, and fluorinating HZ5 by an aqueous NH4F solution of 0.17 M improved ethylene conversion, BTEX selectivity, and catalytic stability due to acidity, mesopore fraction, and crystallinity.

Bayberry Tannin as Stabilizer for the Synthesis of Highly Active and Reusable Heterogeneous Pd Catalysts and Their Application in the Catalytic Hydrogenation of Olefins

  • Chen, Chen;Lv, Guang;Huang, Xin;Liao, Xue Pin;Zhang, Wen Hua;Shi, Bi
    • Bulletin of the Korean Chemical Society
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    • v.33 no.2
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    • pp.403-408
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    • 2012
  • In this study, the homogenous Pd nanoparticles (Pd NPs) were first prepared with bayberry tannin (BT) as the stabilizers. Subsequently, the obtained bayberry tannin-stabilized Pd nanoparticles (BT-Pd) were immobilized onto ${\gamma}-Al_2O_3$ to prepare heterogeneous ${\gamma}-Al_2O_3$-BT-Pd catalysts. Fourier Transformation Infrared Spectrum (FTIR) and X-ray Photoelectron Spectroscopy (XPS) analyses confirmed that the Pd NPs were well stabilized by the phenolic hydroxyl groups of BT. Transmission Electron Microscopy (TEM) observation indicated that the diameter of the Pd NPs can be effectively controlled in the range of 4.2-16.0 nm by varying the amount of BT. It is found that the ${\gamma}-Al_2O_3$-BT-Pd catalysts exhibit highly activity for various olefin hydrogenations. For example, the initial TOF (turnover frequency) of the ${\gamma}-Al_2O_3$-BT-Pd in the allyl alcohol hydrogenation is as high as $12804 mol{\cdot}mol^{-1}{\cdot}h^{-1}$. Furthermore, the ${\gamma}-Al_2O_3$-BT-Pd can be reused 5 times without significant loss of activity, exhibiting a superior reusability as compared with conventionally prepared ${\gamma}-Al_2O_3$-Pd catalysts.