• Title/Summary/Keyword: X.400

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Characteristics of Silicon Oxide Thin Films Prepared by Atomic Layer Deposition Using Alternating Exposures of SiH2Cl2 and O3 (SiH2Cl2 와 O3을 이용한 원자층 증착법에 의해 제조된 실리콘 산화막의 특성)

  • Lee Won-Jun;Lee Joo-Hyeon;Han Chang-Hee;Kim Un-Jung;Lee Youn-Seung;Rha Sa-Kyun
    • Korean Journal of Materials Research
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    • v.14 no.2
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    • pp.90-93
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    • 2004
  • Silicon dioxide thin films were deposited on p-type Si (100) substrates by atomic layer deposition (ALD) method using alternating exposures of $SiH_2$$Cl_2$ and $O_3$ at $300^{\circ}C$. $O_3$ was generated by corona discharge inside the delivery line of $O_2$. The oxide film was deposited mainly from $O_3$ not from $O_2$, because the deposited film was not observed without corona discharge under the same process conditions. The growth rate of the deposited films increased linearly with increasing the exposures of $SiH_2$$Cl_2$ and $O_3$ simultaneously, and was saturated at approximately 0.35 nm/cycle with the reactant exposures over $3.6 ${\times}$ 10^{9}$ /L. At a fixed $SiH_2$$Cl_2$ exposure of $1.2 ${\times}$ 10^{9}$L, growth rate increased with $O_3$ exposure and was saturated at approximately 0.28 nm/cycle with $O_3$ exposures over$ 2.4 ${\times}$ 10^{9}$ L. The composition of the deposited film also varied with the exposure of $O_3$. The [O]/[Si] ratio gradually increased up to 2 with increasing the exposure of $O_3$. Finally, the characteristics of ALD films were compared with those of the silicon oxide films deposited by conventional chemical vapor deposition (CVD) methods. The silicon oxide film prepared by ALD at $300^{\circ}C$ showed better stoichiometry and wet etch rate than those of the silicon oxide films deposited by low-pressure CVD (LPCVD) and atmospheric-pressure CVD (APCVD) at the deposition temperatures ranging from 400 to $800^{\circ}C$.

The Effects of Various Light Intensity on the Polymerization of Resin Composites (광조사 강도의 변화에 따른 광중합 복합레진의 중합반응에 관한 연구)

  • Jun-Gyu Park;Byeong-Hoon Cho;In-Bog Lee;Hyuck-Choon Kwon;Chung-Moon Um
    • Restorative Dentistry and Endodontics
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    • v.26 no.1
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    • pp.86-94
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    • 2001
  • 기존의 광중합기는 높은 광강도를 제공함으로써 광중합 복합레진을 최대한 단축된 시간내의 중합을 목표로 하였다. 이러한 높은 광강도는 복합레진의 중합깊이, 중합률면에서는 우수하나 중합 반응속도가 빠름으로 인해 중합시 응력 발생이 높아진다는 일련의 보고가 있다. 최근에는 광중합 속도를 늦춤으로써 변연적합도 및 중합시 응력 발생을 낮추는 새로운 중합방법들이 제시되고 있다. 이에 본 실험에서는 광조사 강도의 변화가 광중합 복합레진의 중합반응 과정에 미치는 영향 및 중합된 복합레진의 중합률에 대한 영향을 분석하고자 하였다. 5개의 혼합형 광중합 복합레진 (Z-100, Spectrum, Z-250, Clearfil AP-X, P-60)을 사용하였으며 중합시 적용된 광조사 강도에 따라 6개의 실험군으로 정의하였다. 실험군과 이에 따른 광조사 방법은 다음과 같다. 1군은 110mW/$\textrm{cm}^2$로 40초 중합, 2군 210mW/$\textrm{cm}^2$로 40초 중합, 3군 410mW/$\textrm{cm}^2$로 40초 중합, 4군 620mW/$\textrm{cm}^2$로 40초 중합, 5군 110mW/$\textrm{cm}^2$로 10초 중합 후 1분 뒤 620mW/$\textrm{cm}^2$로 30초 중합, 6군 210mW/$\textrm{cm}^2$로 10초 중합 후 1분 뒤 410mW/$\textrm{cm}^2$로 30초 중합하였다. 광중합시 중합 반응 양상에 관한 분석은 시차주사 열계량기를 이용하여 37$^{\circ}C$ 항온상태에서 10분간의 열흐름곡선을 기록하였다. 기록된 열흐름곡선에서 중합 반응시 나타나는 중합열 및 최대 중합열에 이르는 시간을 기록하여 중합반응 속도를 측정하였다. 중합된 복합레진의 중합률은 Fourier Transform Infrared Spectrometer(FTIR)를 이용하였으며 2mm 두께의 복합레진 하방에서의 중합률을 측정하였다. 측정된 결과는 ANOVA 및 Student-Newman-Keuls 방법을 이용하여 유의성을 검증하였다. 실험결과 다음과 같은 결론을 얻었다. 1. 광중합 복합레진 중합시 광조사 강도가 증가할수록 중합열은 증가하였으나 통계적 유의성은 보이지 않았다 (p>0.05). 2. 최대 중합열에 이르는 시간은 광조사 강도가 증가할수록 단축되었다. 이단계 중합방법을 사용한 경우 중합반응 속도를 감소시킬 수 있음을 보였다. 3. 광조사 강도가 증가할수록 중합률은 증가하였다. 이단계 중합방법을 사용한 경우 연속적인 고광강도를 사용한 경우와 유사한 높은 중합률을 보였다. 4. 중합률면에서 광중합복합레진의 중합시 400mW/$\textrm{cm}^2$ 이상의 광강도가 필요한 것으로 나타났다.

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In-vivo Studies on Effect of Lipo-PGE1 on Neoangiogenesis of Composite Graft in a Rabbit Model (가토모델에서 Lipo-PGE1이 복합조직이식편의 미세혈관신생에 미치는 영향)

  • Park, Ji-Ung;Eo, Su-Rak;Cho, Sang-Hun;Choi, Jong-Sun;Kim, Eo-Jin
    • Archives of Plastic Surgery
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    • v.37 no.6
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    • pp.721-725
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    • 2010
  • Purpose: The survival of composite graft is dependent on three steps, (1) plasmatic imbibitions, (2) inosculation, and (3) neovascularization. Among the many trials to increase the survival rate of composite graft, prostaglandin E1 (PGE1) has beneficial effects on the microcirculatory level with vasodilating, antithrombotic, anti-inflammatory and neoangiogenic properties. Lipo-PGE1 which is lipid microspheres containing PGE1 had developed to compensate the systemic and local side effects of PGE1. This study was proposed to determine whether Lipo-PGE1 administration enhanced the survival of composite graft through neovascularization quantitatively in a rabbit ear model. Methods: Fourteen New Zealand White Rabbits each weighing 3~4 kg were divided in two groups: (1) intravenous Lipo-PGE1 injection group and (2) control group. A $2{\times}1\;cm$ sized, full-thickness rectangular composite graft was harvested in each auricle. Then, the graft was reaaproximated in situ using a 5-0 nylon suture. For the experimental group, $3{\mu}g$/kg/day of Lipo-PGE1 ($5{\mu}g$/mL) was administered intravenously through the marginal vein of the ear for 14 days. The control group was received no pharmacologic treatment. On the 14th postoperative day, composite graft of the ear was harvested and immunochemistry staining used Monoclonal mouse anti-CD 31 antibody was performed. Neoangiogenesis was quantified by counting the vessels that showed luminal structures surrounded by the brown color-stained epithelium and counted from 10 random high-power fields (400x) by independent blinded observer. Statistical analysis (Wilcoxon Signed Ranks test for nonparametric data) was performed using SPSS v12.0, with values of p<0.05 considered significant. Results: The mean number of the microvessels was $15.48{\pm}8.65$ in the experimental group and $9.82{\pm}7.25$ in the control group (p=0.028). Conclusion: The use of Lipo-PGE1 facilitated the neoangiogenesis, resulted in the improvement of the survival rate of graft. On the basis of this results, we could support wider application of Lipo-PGE1 for more effective therapeutic angiogenesis and successful survival in various cases of composite graft in the human.

EFFECT OF CAVITY DIVERGENCY ON CEMENT THICKNESS AND BOND STRENGTH OF RESIN INLAY (와벽 이개도가 레진 인레이의 시멘트 두께 및 접착 강도에 미치는 영향)

  • Cha, Yoon-Seog;Cho, Yong-Bum;Shin, Dong-Hoon
    • Restorative Dentistry and Endodontics
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    • v.21 no.2
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    • pp.619-627
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    • 1996
  • There are increasing use of composite resin in the posterior teeth and the new indirect inlay technique was introduced for compensating much troubles faced in direct technique. Many researchers insisted that overall properties of restorative materials were enhanced by an additional curing but this technique still has a problems about using cement material. Resin inlay obtains retention force from friction and another adhesion to tooth structure. A shape of cavity preparation was noted but studies about cement thickness and bond strength with cavity divergency are rare. The purpose of this study is to assess the effect of cavity divergency on cement thickness and bond strength of resin inlay. Cavities, which divergency was $6^{\circ}$, $16^{\circ}$, and $26^{\circ}$ in each group, were prepared and their divergency was verified by Adobe Photoshop program through the image capture with stereo microscope and FlexCam. Inlays were fixed into the cavities with a resin cement, Superbond and were handled under chemical (in 75% ethanol for 24 hrs.) and thermal stress (500 cycles from $5^{\circ}$ to $55^{\circ}C$). MXT 70 (x400) was used for measuring the cement thickness and bond strength was evaluated with a universal testing machine. Following results were obtained : 1. The cement thickness in Mean (S.D.) were; 35.58 (10.31)${\mu}m$ in $6^{\circ}$ group, 35.97 (10.49)${\mu}m$ in $16^{\circ}$ group, and 41.43 (9.33)${\mu}m$ in $26^{\circ}$ group. But there was no significant difference between groups. 2. The bond strength in Mean (S.D.) were ; 33.18 (5.53)kg in $6^{\circ}$ group, 23.47 (13.40)kg in $16^{\circ}$ group, and 19.75 (10.48)kg in $26^{\circ}$ group. $6^{\circ}$ group showed significantly higher value compared to $16^{\circ}$ and $26^{\circ}$ groups (p<0.05). Although the results of this study indicate $6^{\circ}$ divergency will be good for resin inlay, cavity preparation with this type will have lots of difficulties in manufacturing, try-in, and cementation procedures, such as deformation. So it is concluded that $16^{\circ}$ divergent cavity preparation is recommended in resin inlay technique.

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Study on the Effect of Product Line Pricing on Loading Efficiency and Logistics Cost (상품라인별 가격결정이 적재효율 및 물류비에 미치는 영향에 관한 연구)

  • Jung, Sung-Tae;Yoon, Nam-Soo;Han, Kyu-Chul
    • Journal of Distribution Science
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    • v.12 no.8
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    • pp.55-69
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    • 2014
  • Purpose - Despite the importance of price, many companies do not implement pricing policies smoothly, because typical price management strategies insufficiently consider logistics efficiency and an increase in logistics costs due to logistics waste. This study attempts to examine the effect of product line pricing, which corresponds to product mix pricing, on logistics efficiency in the case of manufacturer A, and analyzes how logistics performance changes in response to these variables. Research design, data, and methodology - This study, based on the case of manufacturer A, involved research through understanding the current status, analyses, and then proposing improvement measures. Among all the products of manufacturer A, product group B was selected as the research object, and its distribution channel and line pricing were examined. As a result of simulation, for products with low loading efficiency, improvement measures such as changing the number of bags in the box were suggested, and a quantitative analysis was conducted on how these measures influence logistics costs. The TOPS program was used for the Pallet loading efficiency simulation tool in this study. To prevent products from protruding out of the pallet, the maximum measurement was set as 0.0mm, and loading efficiency was based on the pallet area, and not volume. In other words, its size (length x width) was focused upon, following the purpose of this study and, then, the results were obtained. Results - As a result of the loading efficiency simulation, when the number of bags in the box was changed for 36 products with low average loading efficiency of 73.7%, as shown in

    , loading efficiency improved to 89.9%. Further, from calculating logistics cost based on the cost calculation standard of manufacturer A, the amount of annual logistics cost reduction amounted to 101,458,084 KRW. Given that the sum of the logistics cost of the product group B of manufacturing enterprises A is 400,340,850 KRW, it can be reduced by 25%, to 298,882,766 KRW. Although many methods improve loading efficiency, this study proved that logistics cost could be reduced by changing the number of bags within boxes. If this measure is applied to other items, visible logistics cost reduction effects will be realized through improvements in loading efficiency. Conclusions - Future pricing policies should consider their correlation with quality, loading efficiency, product specifications, and logistics standardization to prevent logistics waste, enabling management to improve earnings for companies. Thus, when companies decide pricing policies for new products, the aspects of merchandising and marketing should take priority; however, the aspect of logistics also needs to be considered as significant. Measures revealed by the study results are not only the responsibilities of manufacturing enterprises. Pricing policy agreements between manufacturing enterprises and distribution companies, and logistics factors related to price determination should be considered; further, governments should also support them for their collaborations. This will enable consumers to purchase quality products with low prices.

  • Liquid Phase Epitaxial Growth of GaAs on InP Substrates (액상에피택시 방법에 의한 InP기판상의 GaAs 이종접합 박막 성장)

    • Kim, Dong-Geun;Lee, Hyeong-Jong;Im, Gi-Yeong;Jang, Seong-Ju;Jang, Seong-Ju;Kim, Jong-Bin;Lee, Byeong-Taek
      • Korean Journal of Materials Research
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      • v.4 no.5
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      • pp.600-607
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      • 1994
    • Optimum exper~mental conditions were established for the growth of heteroepitaxial GaAs layers on InP using liquid phase epitaxy (LPE) technique. Results showed that the optimum growth temperature was $720^{\circ}C$ at a cooling rate of $0.5^{\circ}C$/min. Surface morphology of the grown layers significantly improved by addition of about 0.005wt% Se to the Ga growth melt, which effectively suppressed melt-back of InP substrates into the melt during the initial stage of growth. It was observed that the quality of GaAs layers also improved substantially when the substrates patterned with grating structure were used, as determined by the (400) double crystal X-ray diffraction. The transmission electron microscopy observation indicated t.hat the misfit dislocations interact with each other at the grating region, resulting in a lower dislocation density in the upper GaAs layer.

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    Crystal Structure of Xenon Encapsulate within Na-A Zeolite

    • Im, U Taek;Park, Man;Heo, Nam Ho
      • Bulletin of the Korean Chemical Society
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      • v.21 no.1
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      • pp.75-80
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      • 2000
    • The positions of Xe atoms encapsulated in the molecular-dimensioned cavities of fully dehydrated Na-A have been determined. Na-A was exposed to 1050atm of xenon gas at 400 $^{\circ}C$ for seven days, followed by cooling at pressure to encapsulate Xe atoms. The resulting crystal structure of Na-A(7Xe) (a = 12.249(1) $\AA$, $R_1$ = 0.065, and $R_2$ = 0.066) were determined by single-crystal X-ray diffraction techniques in the cubic space group Pm3m at 21(1) $^{\circ}C$ and 1 atm. In the crystal structure of Na-A(7Xe), seven Xe atoms per unit cell are distributed over four crystallographically distinct positions: one Xe atom at Xe(1) lies at the center of the sodalite unit, two Xe atoms at Xe(4) are found opposite four-rings in the large cavity, and four Xe atoms, two at Xe(2) and others at Xe(3), respectively, occupy positions opposite and between eight- and six-rings in the large cavity. Relatively strong interactions of Xe atoms at Xe(2) and Xe(3) with $Na^+$ ions of four-, eight-, and six-rings are observed:Na(1)-Xe(2) = 3.09(6), Na(2)-Xe(3) = 3.11(2), and Na(3)-Xe(2) = 3.37(8) $\AA$. In each sodalite unit, one Xe atom is located at its center. In each large cavity, six Xe atoms are found, forming a distorted octahedral arrangement with four Xe atoms, at equatorial positions (each two at Xe(2) and Xe(3)) and the other two at axial positions (at Xe(4)). With various reasonable distances and angles, the existence of $(Xe)_6$ cluster is proposed (Xe(2)-Xe(3) = 4.78(6) and 4.94(7), Xe(2)-Xe(4) = 4.71(6) and 5.06(6), Xe(3)-Xe(4) = 4.11(3) and 5.32(4) $\AA$, Xe(2)-Xe(3)-Xe(2) = 93(1), Xe(3)-Xe(2)-Xe(3) = 87(1), Xe(2)-Xe(4)-Xe(2) = 91(4), Xe(2)-Xe(4)-Xe(3) = 55(2), 59(1), 61(1), and 68(1), and Xe(3)-Xe(4)-Xe(3) = 89($^{\circ}1$)). These arrangements of the encapsulated Xe atoms in the large cavity are stabilized by alternating dipoles induced on Xe(2), Xe(3), and Xe(4) by eight- and six-ring $Na^+$ ions as well as four-ring oxygens, respectively.

    Kr Atoms and Their Chlustering in Zeolite A

    • Im, U Taek;Jang, Jang Hwan;Jeong, Gi Jin;Heo, Nam Ho
      • Bulletin of the Korean Chemical Society
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      • v.22 no.9
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      • pp.1023-1029
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      • 2001
    • The positions of Kr atoms encapsulated in the molecular-dimensioned cavities of fully dehydrated zeolite A of unit-cell composition Cs3Na8HSi12Al12O48 (Cs3-A) have been determined. Cs3-A was exposed to 1025 atm of krypton gas at 400 $^{\circ}C$ for four days, followed by cooling at pressure to encapsulate Kr atoms. The resulting crystal structure of Cs3-A(6Kr) (a = $12.247(2)\AA$, R1 = 0.078, and R2 = 0.085) has been determined by single-crystal X-ray diffraction techniques in the cubic space group Pm3m at $21(1)^{\circ}C$ and 1 atm. In the crystal structure of Cs3-A(6Kr), six Kr atoms per unit cell are distributed over three crystallographically distinct positions: each unit cell contains one Kr atom at Kr(1) on a threefold axis in the sodalite unit, three at Kr(2) opposite four-rings in the large cavity, and two at Kr(3) on threefold axes in the large cavity. Relatively strong interactions of Kr atoms at Kr(1) and Kr(3) with Na+ ions of six-rings are observed: Na-Kr(1) = 3.6(1) $\AA$ and Na-Kr(3) = $3.08(5)\AA.$ In each sodalite unit, one Kr atom at Kr(1) was displaced $0.74\AA$ from the center of the sodalite unit toward a Na+ ion, where it can be polarized by the electrostatic field of the zeolite, avoiding the center of the sodalite unit which by symmetry has no electrostatic field. In each large cavity, five Kr atoms were found, forming a trigonal-bipyramid arrangement with three Kr(2) atoms at equatorial positions and two Kr(3) atoms at axial positions. With various reasonable distances and angles, the existence of Kr5 cluster was proposed (Kr(2)-Kr(3) = $4.78(6)\AA$ and Kr(2)-Kr(2) = $5.94(7)\AA$, Kr(2)-Kr(3)-Kr(2) = 76.9(3), Kr(3)-Kr(2)-Kr(3) = 88(1), and Kr(2)-Kr(2)-Kr(2) = $60^{\circ}).$ These arrangements of the encapsulated Kr atoms in the large cavity are stabilized by alternating dipoles induced on Kr(2) by four-ring oxygens and Kr(3) by six-ring Na+ ions, respectively.

    Property of Nickel Silicides with 10 nm-thick Ni/Amorphous Silicon Layers using Low Temperature Process (10 nm-Ni 층과 비정질 실리콘층으로 제조된 저온공정 나노급 니켈실리사이드의 물성 변화)

    • Choi, Youngyoun;Park, Jongsung;Song, Ohsung
      • Korean Journal of Metals and Materials
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      • v.47 no.5
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      • pp.322-329
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      • 2009
    • 60 nm- and 20 nm-thick hydrogenated amorphous silicon (a-Si:H) layers were deposited on 200 nm $SiO_2/Si$ substrates using ICP-CVD (inductively coupled plasma chemical vapor deposition). A 10 nm-Ni layer was then deposited by e-beam evaporation. Finally, 10 nm-Ni/60 nm a-Si:H/200 nm-$SiO_2/Si$ and 10 nm-Ni/20 nm a-Si:H/200 nm-$SiO_2/Si$ structures were prepared. The samples were annealed by rapid thermal annealing for 40 seconds at $200{\sim}500^{\circ}C$ to produce $NiSi_x$. The resulting changes in sheet resistance, microstructure, phase, chemical composition and surface roughness were examined. The nickel silicide on a 60 nm a-Si:H substrate showed a low sheet resistance at T (temperatures) >$450^{\circ}C$. The nickel silicide on the 20 nm a-Si:H substrate showed a low sheet resistance at T > $300^{\circ}C$. HRXRD analysis revealed a phase transformation of the nickel silicide on a 60 nm a-Si:H substrate (${\delta}-Ni_2Si{\rightarrow}{\zeta}-Ni_2Si{\rightarrow}(NiSi+{\zeta}-Ni_2Si)$) at annealing temperatures of $300^{\circ}C{\rightarrow}400^{\circ}C{\rightarrow}500^{\circ}C$. The nickel silicide on the 20 nm a-Si:H substrate had a composition of ${\delta}-Ni_2Si$ with no secondary phases. Through FE-SEM and TEM analysis, the nickel silicide layer on the 60 nm a-Si:H substrate showed a 60 nm-thick silicide layer with a columnar shape, which contained both residual a-Si:H and $Ni_2Si$ layers, regardless of annealing temperatures. The nickel silicide on the 20 nm a-Si:H substrate had a uniform thickness of 40 nm with a columnar shape and no residual silicon. SPM analysis shows that the surface roughness was < 1.8 nm regardless of the a-Si:H-thickness. It was confirmed that the low temperature silicide process using a 20 nm a-Si:H substrate is more suitable for thin film transistor (TFT) active layer applications.

    Feasibility Evaluation for Remediation of Groundwater Contaminated with Heavy Metal using Calcium Polysulfide in Homogeneous media (균질한 매질 내 Calcium polysulfide 주입에 따른 고농도 중금속 오염 지하수 정화 타당성 검토)

    • Hyeon Woo Go;Jin Chul Joo;Kyoungphile Nam;Hee Sun Moon;Sung Hee Yoon;Dong Hwi Lee;So Ye Jang
      • Journal of Soil and Groundwater Environment
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      • v.28 no.1
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      • pp.1-14
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      • 2023
    • In this study, column tests using relatively uniform Jumunjin sand media were conducted to evaluate the feasibility of calcium polysulfide (CaSx, CPS) in removing high concentration of Zn2+ in groundwater. The injected CPS solution reacted rapidly with Zn2+ in artificial groundwater and effectively reduced Zn2+ by more than 99% through metal sulfide precipitation. Since the density (d = 1.27 g/cm3 ) of CPS solution was greater than that of water, CPS solution settled down rapidly while capturing Zn2+ and formed stable CPS layer similar to dense nonaqueous phase liquid. Mass balance analysis on Zn2+ in CPS solution suggested that CPS solution effectively reacted with Zn2+ to form metal sulfide precipitates except for high groundwater seepage velocity of 400 cm/d. With greater groundwater seepage velocity, injected CPS did not completely dissolve at the CPS-water interface, but a partially-misible CPS layer continuously moved and reacted with Zn2++ in the direction of groundwater flow. Since hydraulic conductivity (Kh) decreased slightly due to the generated metal precipitates in the inter-pores of media, injection of CPS solution should be optimized to prevent clogging. As evidenced by both XRF and SEM/EDS results, ZnS precipitates were clearly observed through the reaction between the CPS solution and Zn2+. Further study is warranted to evaluate the feasibility of CPS to remove high-concentration heavy metalcontaminated groundwater in complex and heterogeneous media.


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