• Title/Summary/Keyword: X-ray spectrum

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Preparation and Luminescent Properties of LaPO4:Re (Re=Er, Yb) Nanoparticles (희토류 이온(Er/Yb)이 도핑된 LaPO4 나노입자의 합성과 발광특성)

  • Oh Jae-Suk;Lee Tack-Hyuck;Seok Sang-Il;Jung Ha-Kyun
    • Korean Journal of Materials Research
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    • v.14 no.4
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    • pp.270-275
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    • 2004
  • Due to the luminescence by$ Er ^{ 3+}$ activator, Er-doped $LaPO_4$ powders can be applied for optical amplification materials. In this study, $LaPO_4$:Er nanoparticles were synthesized in solution system using a high-boiling coordinating solvent and their properties were investigated through various spectroscopic techniques. The nanoparticles were to take a single phase of monazite structure by a X-ray diffraction analysis and to have the 5-6 nm of particles size with narrow size distribution by a TEM. And it was confirmed by the EA and FT-IR analyses that the surfaces of nanoparticles are coordinated with the solvent molecules, which will possibly keep from agglomerating between LaPO$_4$:Er nanoparticles. In the emission spectrum of $LaPO_4$:Er nanoparticle at NIR region, on the other hand, it was measured that the emission intensity is very weak, which is due to the transition from $^4$$I_{(13/2)}$ to $^4$$I_{(15/2)}$ of $Er^{3+ }$ion. It was interpreted that the weak luminescence of $LaPO_4$:Er is originated from the hydroxyl groups adsorbed on the surfaces of the nanoparticles, because OH group acts as an efficient quencher for the $^4$$I_{(13/2)}$ \longrightarrow $^4$$I_{(15/2)}$ emission of $Er^{3+}$ activator. But the co-doping of Yb$^{3+}$ as a sensitizer in this nanoparticle results in the increase of the emission intensity at 1539 nm due to the effective energy transfer from $Yb^{3+}$ to $Er^{3+}$ . In addition, the synthesized nanoparticles exhibited good dispersibility with some polymers and effective luminescence at NIR region.n.

Effects of Plasma Surface Treatments Using Dielectric Barrier Discharge to Improve Diamond Films

  • Kang, In-Je;Ko, Min-Guk;Rai, Suresh;Yang, Jong-Keun;Lee, Heon-Ju
    • Proceedings of the Korean Vacuum Society Conference
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    • 2013.02a
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    • pp.552-552
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    • 2013
  • In our study we consider Al2O3 ceramic substrates for Plasma Surface Treatments in order to improve deposited diamond surface and increase diamond deposition rate by applying DBD (Dielectric Barrier Dischrge) system. Because Plasma Surface Treatments was used as a modification method of material surface properties like surface free energy, wettability, and adhesion. By applying Plasma Surface Treatments diamond films are deposited on the Al2O3 ceramic substrates. DC Arc Plasmatron with mathane and hydrogen gases is used. Deposited diamond films are investigated by SEM (Scanning Electron Microscopy), AFM (Atomic Force Microscopy) and XRD (X-ray Diffractometer). Then the C-H stretching of synthetic diamond films by FTIR (Fourier Transform Infrared Spectroscopy) is studied. As a result, nanocrystalline diamond films were identified by using SEM and diamond properties in XRD peaks at (111, $43.8{\Box}$, (220, $75.3{\Box}$ and (311, $90.4{\Box}$ were shown. Absorption peaks in FTIR spectrum, caused by CHx sp3 bond stretching of CVD diamond films, were identified as well. Finally, we improved such parameters as depostion rate ($2.3{\mu}m$/h), diamond surface uniformity, and impurities level by applying Plasma Surface Treatments. These experimental results show the importance of Plasma Surface Treatments for diamond deposition by a plasma source.

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Low temperature growth of GaN on sapphire using remote plasma enhanced-ultrahigh vacuum chemical vapor deposition

  • Park, J.S.;Kim, M.H.;Lee, S.N.;Kim, K.K.;Yi, M.S.;Noh, D.Y.;Kim, H.G.;Park, S.J.
    • Journal of the Korean Vacuum Society
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    • v.7 no.s1
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    • pp.85-99
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    • 1998
  • A ultrahigh vacuum chemical vapor deposition(UHVCVD)/metalorganic chemical vapor deposition(MOMBE) system equipped with a radio frequency(RF)-plasma cell was employed to grow GaN layer on the sapphire at a low temperature. The x-ray photoelectron spectroscopy analysis of nitrogen composition on the nitridated sapphite surface indicated that a nitridation process is mostly affected by the RF power at low temperature. Atomic force microscope images of nitridated surface the protrusion density on the nitridated sapphire is dependent on the nitridation temperature. The crystallinity of GaN grown at $450^{\circ}C$ was found to be much improved when the sapphire was nitridated at low temperature prior to the GaN layer growth. Moreover, a strong photoluminescence spectrum of GaN grown by UHVCVD/MOMBE with a rf-nitrogen plasma was observed for the first time at room temperature.

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Conduction Properties of NitAI Ohmic Contacts to AI-implanted p-type 4H-SiC (AI 이온 주입된 p-type 4H-SiC에 형성된 Ni/AI 오믹접촉의 전기 전도 특성)

  • Joo, Seong-Jae;Song, Jae-Yeol;Kang, In-Ho;Bahng, Wook;Kim, Sang-Cheol;Kim, Nam-Kyun;Lee, Yong-Jae
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.22 no.9
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    • pp.717-723
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    • 2009
  • Ni/Al ('/' denotes deposition sequence) contacts were deposited on Al-implanted 4H-SiC for ohmic contact formation, and the conduction properties were characterized and compared with those of Ni-only contacts. The thicknesses of the Ni and Al thin film were 30 nm and 300 nm, respectively, and the films were sequentially deposited bye-beam evaporation without vacuum breaking. Rapid thermal anneal (RTA) temperature was varied as follows : $840^{\circ}C$, $890^{\circ}C$, and $940^{\circ}C$. The specific contact resistivity of the Ni contact was about $^{\sim}2\;{\pm}\;10^{-2}\;{\Omega}{\cdot}cm^2$, However, with the addition of Al overlayer, the specific contact resistivity decreased to about $^{\sim}2\;{\pm}\;10^{-4}\;{\Omega}{\cdot}cm^2$, almost irrespective of RTA temperature. X-ray diffraction (XRD) analysis of the Ni contact confirmed the existence of various Ni silicide phases, while the results of Ni/Al contact samples revealed that Al-contaning phases such as $Al_3Ni$, $Al_3Ni_2$, $Al_4Ni_3$, and $Ab_{3.21}Si_{0.47}$ were additionally formed as well as the Ni silicide phases. Energy dispersive spectroscopy (EDS) spectrum showed interfacial reaction zone mainly consisting of Al and Si at the contact interface, and it was also shown that considerable amounts of Si and C have diffused toward the surface. This indicates that contact resistance lowering of the Ni/Al contacts is related with the formation of the formation of interfacial reaction zone containing Al and Si. From these results, possible mechanisms of contact resistance lowering by the addition of Al were discussed.

Interaction of a Pyridyl-Terminated Carbosiloxane Dendrimer with Metal Ions at the Air-Water Interface

  • Lee, Burm-Jong;Kim, Seong-Hoon;Kim, Chung-kyun;Shin, Hoon-Kyu;Kwon, Young-Soo
    • KIEE International Transactions on Electrophysics and Applications
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    • v.3C no.6
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    • pp.216-219
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    • 2003
  • A new class of carbosiloxane dendrimer (G4-48PyP) terminated with 4-pyridylpropano I was synthesized and its possible application to functional thin films was examined through metal complexation and Langmuir-Blodgett (LB) technique. The highly concentrated periphery pyridyl groups of G4-48PyP were exposed on aq. aluminum ions at the air-water interface. The monolayers showed stability up to ca. 50 mN/m of surface pressure. When the subphase became acidic or alkaline, the monolayers changed to condensed phase. The presence of aluminum ions also caused reduction of the molecular area. The macroscopic images of the monolayers were monitored by Brewster angle microscopy (BAM) and only the images of dendrimer aggregates could be observed after the monolayer collapse. The surface images of the monolayer LB film were scanned by atomic force microscopy (AFM). The convex structures of single and aggregate molecules were directly observed. The structures of Langmuir-Blodgett (LB) films were characterized by FT-IR, UV-Vis, and X-ray photoelectron spectroscopy (XPS). The UV-Vis spectrum of the aluminum ion-complexed LB film showed additional band around 670nm, which was not found in the spectra of dendrimer itself or aq. aluminum ions. XPS spectra also supported the incorporation of aluminum ions into the LB films.

Structural and Magnetic Properties of Monomeric and Dimeric Copper(II) Complexes with Phenyl-N-[(pyridine-2-yl)methylene]methaneamide

  • Lee, Hong-Woo;Sengottuvelan, Nallathambi;Seo, Hoe-Joo;Choi, Jae-Soo;Kang, Sung-Kwon;Kim, Young-Inn
    • Bulletin of the Korean Chemical Society
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    • v.29 no.9
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    • pp.1711-1716
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    • 2008
  • The reaction of copper(II) chloride with phenyl-N-[(pyridine-2-yl)methylene]methaneamide (ppmma) leads to a new $\mu$ -chloro bridged dimeric [Cu(ppmma)$Cl_2$]$_2$ complex, whereas a reaction of copper(II) bromide with ppmma affords a monomeric Cu(ppmma)$Br_2$ complex. Both complexes have been characterized by X-ray crystallography and electronic absorption spectroscopy. The crystal structural analysis of [Cu(ppmma)$Cl_2$]$_2$ shows that the two Cu(II) atoms are bridged by two chloride ligands, forming a dimeric copper(II) complex and the copper ion has a distorted square-pyramidal geometry ($\tau$ = 0.2). The dimer units are held through a strong intermolecular $\pi-\pi$ interactions between the nearest benzyl rings. On the other hand, Cu(ppmma)Br2 displayed a distorted square planar geometry with two types of strong intermolecular π-π interaction. EPR spectrum of [Cu(ppmma)$Cl_2$]$_2$ in frozen glas s at 77 K revealed an equilibrium between the mononuclear and binuclear species. The magnetic susceptibilities data of [Cu(ppmma)$Cl_2$]$_2$ and Cu(ppmma)$Br_2$ follow the Curie-Weiss law. No significant intermolecular magnetic interactions were examined in both complexes, and magnetic exchange interactions are discussed on the basis of the structural features.

Mossbauer Spectroscopy Studies of Garnet $Y_{2.5}La_{0.5}Fe_5O_{12}$ (Garnet $Y_{2.5}La_{0.5}Fe_5O_{12}$의 Mossbauer 분광학 연구)

  • 염영랑;김철성
    • Journal of the Korean Magnetics Society
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    • v.9 no.1
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    • pp.29-34
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    • 1999
  • $Y_{2.5}La_{0.5}Fe_5O_{12}$ is fabricated by a sol-gel method and the magnetic properties of single phase garnet are investigated by using X-ray diffraction, vibrating sample magnetometer, scanning electron microscopy and M$\"{o}$ssbauer spectroscopy. The single phase powders garnet was fired at 100$0^{\circ}C$ for 8 hours. The crystal structures of samples are cubic garnet. Mossbauer spectroscopy were measured from 13 K to 750 K. M$\"{o}$ssbauer spectra show that the iron exist ferric trivalence in sample. The spin wave constants were determined $B_{3/2}=0.32{\pm}0.05,\; C_{5/2}=0.18{\pm}0.05$ and Debye temperature were determined 382 K at 24(d) site and 246 K at 16(a)-site. The saturation magnetization $M_s$ of powder is 25 emu/g. 25 emu/g.

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Synthesis of the Water Dispersible L-Valine Capped ZnS:Mn Nanocrystal and the Crystal Structure of the Precursor Complex: [Zn(Val)2(H2O)]

  • Hwang, Cheong-Soo;Lee, Na-Rae;Kim, Young-Ah;Park, Youn-Bong
    • Bulletin of the Korean Chemical Society
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    • v.27 no.11
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    • pp.1809-1814
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    • 2006
  • The L-Valinate anion coordinating zinc complex, [$Zn(val)_2(H-2O)$], was isolated and structurally characterized by single crystal X-ray crystallography. The crystal possess orthorhombic symmetry with a space group $P2_12_12_1$, Z = 4, and a = 7.4279(2)$\AA$, b = 9.4342(2)$\AA$, c =20.5862(7)$\AA$ respectively. The compound features a penta-coordinate zinc ion in which the two valine anion molecules are directly coordinating the central zinc metal ion via their N (amine) and O (carboxylate) atoms, and an additional coordination to zinc is made by water molecule (solvent) to form a distorted square pyramidal structure. In addition, further synthesis of the valine capped ZnS:Mn nanocrystal from the reaction of [$Zn(val)_2(H-2O)$] precursor with $Na_2S$ and 1.95 weight % of $Mn^{2+}$ dopant is described. Obtained valine capped nanocrystal was water dispersible and was optically characterized by UV-vis and solution PL spectroscopy. The solution PL spectrum for the valine capped ZnS:Mn nanocrystal showed an excitation peak at 280 nm and a very narrow emission peak at 558 nm respectively. The measured and calculated PL efficiency of the nanocrystal in water was 15.8%. The obtained powders were characterized by XRD, HR-TEM, and EDXS analyses. The particle size of the nanocrystal was also measured via a TEM image. The measured average particle size was 3.3 nm.

Study on the Corrosion Characteristics in the Slag Line of SEN Oxide Refractory (산화물계 SEN내화물의 슬래그 라인부 침식특성 연구)

  • Sung, Young Taek;Son, Jeong Hun;Lee, Sung Seok;Bae, Dong Sik
    • Korean Journal of Materials Research
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    • v.24 no.1
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    • pp.53-59
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    • 2014
  • The corrosion resistance of submerged entry nozzle (SEN) materials were investigated for high-class steel manufacturing. Composite samples were fabricated by mixing $ZrO_2$, $Al_2O_3$, MgO, mullite, spinel, and carbon. The raw materials were mixed with attrition milling, compacted in a uniaxial pressure of 200MPa and calcined at $1000^{\circ}C$ for 3 h in $N_2$ atmosphere. The bulk density and apparent porosity of the calcined samples were measured by the liquid displacement method in water using Archimedes's principle. The corrosion resistance of the samples were measured by cup test with mold powder at $1550^{\circ}C$ for 2 h. The microstructure and elemental analysis of samples were observed by scanning electron microscopy (SEM), energy dispersive spectrum (EDS), and X-ray diffraction pattern (XRD). The XRD result shows that the starting raw materials were crystalline phase. The microstructure of fabricated specimen was investigated before and after corrosion tests at $1000^{\circ}C$ and $1550^{\circ}C$ for 2h. $ZrO_2$-C composite showed good resistance in the slag corrosion test. Among the composite oxide materials, $ZrO_2-Al_2O_3$-C and $ZrO_2$-MgO-C showed better resistance than $ZrO_2$-C in the slag corrosion test. The diameter variation index of $ZrO_2$-C refractory was 16.1 at $1000^{\circ}C$ for 2 h. The diameter variation index of the $ZrO_2-Al_2O_3$-C refractory was larger than that of the $ZrO_2$-C refractory at $1550^{\circ}C$ for 2 h.

Synthesis and Photoluminescence Properties of Dy3+- and Eu3+-codoped CaMoO4 Phosphors (Dy3+와 Eu3+ 이온이 동시 도핑된 CaMoO4 형광체의 합성과 발광 특성)

  • Kim, Junhan;Cho, Shinho
    • Journal of Surface Science and Engineering
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    • v.48 no.3
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    • pp.82-86
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    • 2015
  • $Dy^{3+}$- and $Eu^{3+}$-codoped $CaMoO_4$ Phosphors were synthesized by using the solid-state reaction method. The crystal structure, morphology, and optical properties of the resulting phosphor particles were investigated by using the X-ray diffraction, field-emission scanning electron microscopy, and photoluminescence spectroscopy. XRD patterns exhibited that all the synthesized phosphors showed a tetragonal system with a main (112) diffraction peak, irrespective of the content of $Eu^{3+}$ ions. As the content of $Eu^{3+}$ ions increased, the grains showed a tendency to agglomerate. The excitation spectra of the synthesized powders were composed of one strong broad band centered at 305 nm in the range of 220 - 350 nm and several weak peaks in the range of 350 - 500 nm resulting from the 4f transitions of activator ions. Upon ultraviolet excitation at 305 nm, the yellow emission line due to the $^4F_{9/2}{\rightarrow}^6H_{13/2}$ transition of $Dy^{3+}$ ions and the main red emission spectrum resulting from the $^5D_0{\rightarrow}^7F_2$ transition of $Eu^{3+}$ ions were observed. With the increase of the content of $Eu^{3+}$, the intensity of the yellow emission band gradually decreased while that of the red emission increased. These results indicated that the emission intensities of yellow and red emissions could be modulated by changing the content of the $Dy^{3+}$ and $Eu^{3+}$ ions incorporated into the host crystal.