• 제목/요약/키워드: X-ray photon spectroscopy

검색결과 25건 처리시간 0.026초

ARPES study of Ultrathin Fe Grown on Cu (001) surface

  • Poornima, L.;Oh, Y.R.;Park, Y.S.;Kim, W.;Kim, C.G.;Hong, J.;Hwang, Chan-Yong
    • 한국진공학회:학술대회논문집
    • /
    • 한국진공학회 2011년도 제40회 동계학술대회 초록집
    • /
    • pp.350-350
    • /
    • 2011
  • The spin structure of Fe over layers on Cu (001), especially in region II is one of the unsolved problem for many years. We study the out - of - plane (OP) Fermi surfaces (FSs) of 7 monolayer Fe/Cu (001) films using angle resolved photo emission spectroscopy (ARPES). Ultrathin Fe was grown on Cu (001) substrate at room temperature and the experimental measurements were carried out at room temperature and low temperature. Fermi surfaces measured about $\frac{1}{4}$ of the Brillouin Zone (BZ) using photon energies ranging from 170 eV to 280 eV. Our results confirmed that ferromagnetic signal at 7 ML Fe on Cu (001) is nearly zero. These results are consistent with our recent x-ray magnetic circular dichroism (XMCD) and surface magneto - optic Kerr effect (SMOKE) experiments. Based on our observations we have made a simple model of this system, which explains all the experimental results.

  • PDF

NEXAFS 분광법에 의한 Alq3/Ba과 Alq3/Au의 계면에서의 전자 천이에 관한 연구 (A Study on the Electron Transfer at the Alq3/Ba and Alq3/Au Interfaces by NEXAFS Spectroscopy)

  • 임수용;주성후;양재웅
    • 한국표면공학회지
    • /
    • 제45권1호
    • /
    • pp.15-19
    • /
    • 2012
  • Tris(8-quinolinolato)aluminum(III); $Alq_3$ has been frequently used as an electron transporting layer in organic light-emitting diodes. Either Ba with a low work function or Au with a high work function was deposited on $Alq_3$ layer in vacuum. And then, the behaviors of electron transition at the $Alq_3$/Ba and $Alq_3$/Au interfaces were investigated by using the near edge x-ray absorption fine structure (NEXAFS) spectroscopy. In the each interface, the energy levels of unoccupied obitals were assigned as ${\pi}^*$(LUMO, LUMO+1, LUMO+2 and LUMO+3) and ${\sigma}^*$. And the relative intensities of these peaks were investigated. In an oxygen atom composing $Alq_3$ molecule, the relative intensities for a transition from K-edge to LUMO+2 were largely increased as Ba coverage (${\Theta}_{Ba}$, 2.7 eV) with a low work function was in-situ sequentially increased on $Alq_3$ layer. In contrast, the relative intensities for the LUMO+2 peak were reduced as Au coverage (${\Theta}_{Au}$, 5.1 eV) with a high work function were increased on $Alq_3$ layer. This means that the electron transition by photon in oxygen atom which consists in the unoccupied orbitals in $Alq_3$ molecule, largely depends on work function of a metal. Meanwhile, in the case of electron transition in a carbon atom, as ${\Theta}_{Ba}$ was increased on $Alq_3$, the relative intensity from K-edge to ${\pi}_1{^*}$ (LUMO and LUMO+1) was slightly decreased, and from K-edge to ${\pi}_2{^*}$ (LUMO+2 and LUMO+3) was somewhat increased. This rising of the energy state from ${\pi}_1{^*}$ to ${\pi}_2{^*}$ exhibits that electrons provided by Ba would contribute to the process of electron transition in the $Alq_3$/Ba interfaces. As shown in above observation, the analyses of NEXAFS spectra in each interface could be important as a basic data to understand the process of electron transition by photon in pure organic materials.

마그네트론 코스퍼터링법으로 형성한 SiO2/Si 양자점 초격자 구조의 특성 (Characteristics of SiO2/Si Quantum Dots Super Lattice Structure Prepared by Magnetron Co-Sputtering Method)

  • 박영빈;김신호;하린;이현주;이정철;배종성;김양도
    • 한국재료학회지
    • /
    • 제20권11호
    • /
    • pp.586-591
    • /
    • 2010
  • Solar cells have been more intensely studied as part of the effort to find alternatives to fossil fuels as power sources. The progression of the first two generations of solar cells has seen a sacrifice of higher efficiency for more economic use of materials. The use of a single junction makes both these types of cells lose power in two major ways: by the non-absorption of incident light of energy below the band gap; and by the dissipation by heat loss of light energy in excess of the band gap. Therefore, multi junction solar cells have been proposed as a solution to this problem. However, the $1^{st}$ and $2^{nd}$ generation solar cells have efficiency limits because a photon makes just one electron-hole pair. Fabrication of all-silicon tandem cells using an Si quantum dot superlattice structure (QD SLS) is one possible suggestion. In this study, an $SiO_x$ matrix system was investigated and analyzed for potential use as an all-silicon multi-junction solar cell. Si quantum dots with a super lattice structure (Si QD SLS) were prepared by alternating deposition of Si rich oxide (SRO; $SiO_x$ (x = 0.8, 1.12)) and $SiO_2$ layers using RF magnetron co-sputtering and subsequent annealing at temperatures between 800 and $1,100^{\circ}C$ under nitrogen ambient. Annealing temperatures and times affected the formation of Si QDs in the SRO film. Fourier transform infrared spectroscopy (FTIR) spectra and x-ray photoelectron spectroscopy (XPS) revealed that nanocrystalline Si QDs started to precipitate after annealing at $1,100^{\circ}C$ for one hour. Transmission electron microscopy (TEM) images clearly showed SRO/$SiO_2$ SLS and Si QDs formation in each 4, 6, and 8 nm SRO layer after annealing at $1,100^{\circ}C$ for two hours. The systematic investigation of precipitation behavior of Si QDs in $SiO_2$ matrices is presented.

Solvothermal Synthesis and Photocatalytic Property of SnNb2O6

  • 서세원;이찬우;성원모;허세윤;김상현;이명환;홍국선
    • 한국진공학회:학술대회논문집
    • /
    • 한국진공학회 2012년도 제43회 하계 정기 학술대회 초록집
    • /
    • pp.441-442
    • /
    • 2012
  • SnNb2O6 nanoplates were prepared by a solvothermal synthesis with water and ethanol mixed solvent. For improvement of their properties, as-prepared SnNb2O6 nanoplates also were calcined. The prepared powder was characterized by X-ray diffraction (XRD), field emission scanning electron microscope (FESEM), Transmission electron microscope (TEM), UV-vis spectroscopy, Raman spectrometer, Brunauer-Emmett-Teller (BET). The calcined nanoplates have a smaller surface area than the as-prepared nanoplates have. Nevertheless, in the case of the optical absorption properties, the calcined nanoplates could absorb more photon energy, due to their smaller band gaps. The Raman analysis revealed that the Nb-O bond length in the calcined nanoplates was longer than that in the as-prepared nanoplate. The higher optical absorption capability of the calcined nanoplates was attributed to the local structure variation within them. Furthermore the high crystallinity of the calcined nanoplates is effective in improving the generation of charge carriers. So, It was found that the calcined nanoplates exhibited superior photocatalytic activity for the evolution of H2 from an aqueous methanol solution than the as-prepared nanoplates under UV and visible irradiation. Therefore, the enhanced photocatalytic activity of the calcined nanoplate powder for H2 evolution was mainly attributed to its high crystallinity and improved optical absorption property resulting from the variation of the crystal structure.

  • PDF

졸겔법으로 제작된 Al-doped ZnO 박막의 Aluminum Chloride 농도에 따른 구조적 및 광학적 특성 (Effects of Aluminum Chloride Concentrations on Structural and Optical Properties of Al-doped ZnO Thin Films Prepared by the Sol-Gel Method)

  • 조관식;김민수;임광국;이재용;임재영
    • 대한금속재료학회지
    • /
    • 제50권11호
    • /
    • pp.847-854
    • /
    • 2012
  • Al-doped ZnO (AZO) thin films were grown on quartz substrates by the sol-gel method. The effects of the Al mole fraction on the structural and optical properties of the AZO thin films were investigated by scanning electron microscopy (SEM), X-ray diffraction (XRD), and UV-VIS spectroscopy. The particle size of the AZO thin films decreased with an increase in Al concentrations. The optical parameters, the optical band gap, absorption coefficient, refractive index, dispersion parameter, and optical conductivity, were studied in order to investigate the effects of Al concentration on the optical properties of AZO thin films. The dispersion energy, single-oscillator energy, average oscillator wavelength, average oscillator strength, and refractive index at an infinite wavelength of the AZO thin films were affected by the Al incorporation. The optical conductivity of the AZO thin films also increased with increasing photon energy.