• Proceedings of the Korean Vacuum Society Conference
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• 2000.02a
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• pp.195-195
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• 2000

TFT-LCD의 제조공정은 박막층의 식각 공정에 대해 기존의 습식 공정을 대치하는 건식식각이 선호되고 있다. 건식 식각 공정은 반도체 공저에 응용되면서 소자의 최소 선폰(CD)이 감소함에 따라 유도결합셩 프라즈마를 비롯한 고밀도 플라즈마 이용한 플라즈마 장비 사용이 증가하는 추세이다. 여기에 평판디스플레이의 공정을 위해서는 대면적과 사각형 기판에 대한 균일도를 보장할 수 있는 고밀도의 균일한 플라즈마 유지가 중요하다. 본 실험에서는 자장강화된 유도결합형 플라즈마의 플라즈마 밀도 및 균일도를 살펴보고 TFT-LCD에 gate 전극으로 사용되는 Al-Nd 박막의 식각을 통하여 식각균일도와 식각속도 및 식각 선택도 등의 건식 식각 특성을 보고자 한다. 영구자석 및 전자석의 설치는 사각형의 유도결합형 플라즈마는 소형 영구자석을 배열하여 부착하였으며, 외부에는 chamber와 같이 사각형태의 전자석을 500mm$\times$500mm의 크기를 갖는 z축 방향의 Helmholtz형으로 제작하였다. 더. 영구자석 배열에 대해서는 자석간의 거리와 세기 변화를 조합하여 magnetic cusping의 변화를 주었으며 전자석의 세기는 전류값을 기준으로 변화시켜 보았다. 실험을 통하여 플라즈마 균일도를 5% 이하로 개선하고 이러한 균일도를 유지하며 플라즈마 밀도를 높일 수 있는 조건을 찾을 수 있었다. 이러한 적합화된 조건에서 저장강화된 유도결합형 프라즈마를 Al-Nd 박막 식각에 응용한 결과, Al-Nd의 식각속도 및 식각 선택도는 유도결합형 프라즈마에 비해 크게 증가하였으며, 식각균일도가 개선되는 것을 관찰하였다. 또한 electrostatic probe(Hiden, Analytical)를 이용하여 Al-Nd 식각에 사용된 반응성 식각가스에 대한 저장강화된 유도결합형 플라즈마의 특성 분석을 수행하였다.c recoil detection, Rutherford backscattering spectroscopy, X-ray diffraction, secondary electron microscopy, atomic force microscoy, $\alpha$-step, Raman scattering spectroscopu, Fourier transform infrared spectroscopy 및 micro hardness tester를 이용하여 기판 bias 전압이 DLC 박막의 특성에 미치는 영향을 조사하였다. 분석결과 본 연구에서 제작된 DLC 박막은 탄소와 수소만으로 구성되어 있으며, 비정질 상태임을 알 수 있었다. 기판 bias 전압의 증가에 따라 박막의 두께가 감소됨을 알 수 있었고, -150V에서는 박막이 거의 만들어지지 않았으며, -200V에서는 기판 표면이 식각되었다. 이것은 기판 bias 전압과 ECR 플라즈마에 의한 이온충돌 효과 때문으로 판단되며, 150V 이하에서는 증착되는 양보다 re-sputtering 되는 양이 더 많을 것으로 생각된다. 기판 bias 전압을 증가시킬수록 플라즈마에 의한 이온충돌 현상이 두드러져 탄소와 결합하고 있던 수소원자들이 떨어져 나가는 탈수소화 (dehydrogenation) 현상을 확인할 수 있었으며, 이것은 C-H 결합에너지가 C-C 결합이나 C=C 결합보다 약하여 수소 원자가 비교적 해리가 잘되므로 이러한 현상이 일어난다고 판단된다. 결합이 끊어진 탄소 원자들은 다른 탄소원자들과 결합하여 3차원적 cross-link를 형성시켜 나가면서 내부 압축응력을 증가시키는 것으로 알려져 있으며, hardness 시험 결과로 이것을 확인할 수 있었다. 그리고 표면거칠기는 기판 bias 전압을 증가시킬수록 더 smooth 해짐을 확인하였다.인하였다.을 알 수 있

• Proceedings of the Korean Vacuum Society Conference
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• 2010.02a
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• pp.165-165
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• 2010

$1.55\;{\mu}m$ 대역의 레이저 다이오드를 제작하기 위해, InP(001) 기판에 InAlGaAs 물질을 장벽층으로 하는 InAs 양자점 구조를 분자선증착기 (MBE)를 이용하여 성장하고 구조 및 광학적 특성을 Double Crystal X-ray Diffraction (DCXRD), Atomic Force Microscopy (AFM), Photoluminescence (PL)을 이용하여 평가하였다. 일반적으로 InAlGaAs 물질은 고유한 상분리 현상 (Phase Separation)이 나타나는 특성이 있으며, 이는 양자점 성장에 중요한 요인으로 작용할 수 있다. 이러한 InAlGaAs 물질의 상분리 현상을 기판온도 ($540^{\circ}C$, $555^{\circ}C$, $570^{\circ}C$)를 비롯한 성장변수를 변화시켜 제어하고 InAs 양자점 형성에 어떠한 영향을 미치는지를 분석하였다. 540의 성장온도에서 InP(001) 기판에 격자정합한 InAlGaAs 장벽층이 성장온도를 $570^{\circ}C$로 증가시킬 경우 기판에 대하여 인장 응력 (Tensile Strain)을 받는 구조로 변화되었다. 인장응력을 받는 InAlGaAs 장벽층을 Ga Flux 양을 조절하여 격자정합한 InAlGaAs 층을 형성할 수 있었다. AFM을 통한 표면 형상 분석 결과, 서로 다른 기판온도에서 성장한 InAlGaAs 물질이 InP(001) 기판에 격자정합 조건일지라도 표면의 거칠기 (Surface Roughness)는 매우 다른 양상을 보였고 InAs 양자점 형성에 직접적으로 영향을 주었다. $570^{\circ}C$에서 성장한 InAlGaAs 위에 형성한 InAs 양자점의 가로방향 크기를 세로방향 크기로 나눈 비율이 1.03으로서, 555와 $540^{\circ}C$의 1.375 와 1.636와 비교할 때 모양 대칭성이 현저히 개선된 것을 알 수 있다. 상분리 현상이 줄어 표면 거칠기가 좋은 InAlGaAs 위에 양자점을 형성할 때 원자들의 이동도가 상대적으로 높아 InAs 양자점의 크기가 증가하고, 밀도가 감소하는 현상이 나타났다. 또한 InAlGaAs 장벽층이 InP(001) 기판을 기준으로 응력 (Compressive 또는 Tensile)이 존재하는 경우, InAs 양자점 모양이 격자정합 조건 보다 비대칭적으로 변하는 특성을 보여 주었다. 이로부터, 대칭성이 개선된 InAs 양자점 형성에 InAlGaAs 장벽층의 표면 거칠기와 응력이 중요한 변수로 작용함을 확인 할 수 있었다. PL 측정 결과, 발광파장은 $1.61\;{\mu}m$로 InAs 양자구조 형상에 따라 광강도 (Intensity), 반치폭 (Line-width broadening) 등이 변화 되었다.

• Proceedings of the Korean Vacuum Society Conference
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• 2013.08a
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• pp.155.2-155.2
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• 2013

Strain-relaxed SiGe layer on Si substrate has numerous potential applications for electronic and opto- electronic devices. SiGe layer must have a high degree of strain relaxation and a low dislocation density. Conventionally, strain-relaxed SiGe on Si has been manufactured using compositionally graded buffers, in which very thick SiGe buffers of several micrometers are grown on a Si substrate with Ge composition increasing from the Si substrate to the surface. In this study, a new plasma process, i.e., the combination of PIII&D and HiPIMS, was adopted to implant Ge ions into Si wafer for direct formation of SiGe layer on Si substrate. Due to the high peak power density applied the Ge sputtering target during HiPIMS operation, a large fraction of sputtered Ge atoms is ionized. If the negative high voltage pulse applied to the sample stage in PIII&D system is synchronized with the pulsed Ge plasma, the ion implantation of Ge ions can be successfully accomplished. The PIII&D system for Ge ion implantation on Si (100) substrate was equipped with 3'-magnetron sputtering guns with Ge and Si target, which were operated with a HiPIMS pulsed-DC power supply. The sample stage with Si substrate was pulse-biased using a separate hard-tube pulser. During the implantation operation, HiPIMS pulse and substrate's negative bias pulse were synchronized at the same frequency of 50 Hz. The pulse voltage applied to the Ge sputtering target was -1200 V and the pulse width was 80 usec. While operating the Ge sputtering gun in HiPIMS mode, a pulse bias of -50 kV was applied to the Si substrate. The pulse width was 50 usec with a 30 usec delay time with respect to the HiPIMS pulse. Ge ion implantation process was performed for 30 min. to achieve approximately 20 % of Ge concentration in Si substrate. Right after Ge ion implantation, ~50 nm thick Si capping layer was deposited to prevent oxidation during subsequent RTA process at $1000^{\circ}C$ in N2 environment. The Ge-implanted Si samples were analyzed using Auger electron spectroscopy, High-resolution X-ray diffractometer, Raman spectroscopy, and Transmission electron microscopy to investigate the depth distribution, the degree of strain relaxation, and the crystalline structure, respectively. The analysis results showed that a strain-relaxed SiGe layer of ~100 nm thickness could be effectively formed on Si substrate by direct Ge ion implantation using the newly-developed PIII&D process for non-gaseous elements.

• Korean Journal of Materials Research
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• v.2 no.5
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• pp.330-336
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• 1992

Four distinctive hot pressed and heat treated S${i_3}{N_4}$ceramics, S${i_3}{N_4}$-8%${Y_2}{O_3}$, S${i_3}{N_4}$-6% ${Y_2}{O_3}$-2% $A{l_2}{O_3}$, S${i_3}{N_4}$-4% ${Y_2}{O_3}$-3% $A{l_2}{O_3}$, 그리고 S${i_3}{N_4}$-1% MgO-1% Si$O_2$(in wt%), were prepared and characterized by X-ray diffraction, scanning electron microscopy, image analysis and mechanical tests. The fracture toughness of S${i_3}{N_4}$-8% ${Y_2}{O_3}$specimens containing large elongated grains showed the highest value of about 9.8MPa$m^{1/2}$. Two out of four S${i_3}{N_4}$, ceramics(S${i_3}{N_4}$-6% ${Y_2}{O_3}$-2% $A{l_2}{O_3}$and S${i_3}{N_4}$-4% ${Y_2}{O_3}$-3% $A{l_2}{O_3}$) heat treated at 200 $0^{\circ}C$retained the fracture strength of over 900MPa and fracture toughness of over 8.0MPa$m^{1/2}$. Large ${\beta}$-S${i_3}{N_4}$grains having a diameter larger than 1${\mu}$m appeared to contribute to increase in fracture toughness.

• Korean Journal of Materials Research
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• v.9 no.12
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• pp.1211-1215
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• 1999

Fluorinated amorphous carbon (a-C:F) films were prepared by an electron cyclotron resonance chemical vapor deposition (ECRCVD) system using a gas mixture of $C_2F_6$ and $CH_4$ over a range of deposition temperature (room temperature ~ 300$^{\circ}C$). 500$^{\AA}C$ thick DLC films were pre-deposited on Si substrate to improve the strength between substrate and a-C:F film. The chemical bonding structure, chemical composition, surface roughness and dielectric constant of a-C:F films deposited by varying the deposition temperature were studied with a variety of techniques, such as Fourier transform infrared spectroscopy(FTIR), X-ray photoelectron spectroscopy(XPS), atomic force microscopy (AFM) and capacitance-voltage(C-V) measurement. Both deposition rate and fluorine content decreased linearly with increasing deposition temperature. As the deposition temperature increased from room temperature to 300$^{\circ}C$, the fluorine concentration decreased from 53.9at.% down to 41.0at.%. The dielectric constant increased from 2.45 to 2.71 with increasing the deposition temperature from room temperature to 300$^{\circ}C$. The film shrinkage was reduced with increasing deposition temperature. This results ascribed by the increased crosslinking in the films at the higher deposition temperature.

• Korean Journal of Materials Research
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• v.2 no.5
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• pp.375-382
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• 1992

Molybdenum silicide films have been prepared by sputtering from a single composite MoS$i_2$ source on both P, B$F_2$respectively implanted (5${\times}10^{15}ions/cm^2$ single crystal and P implanted (5${\times}10^{15}ions/cm^2$) polycrystalline silicon substrates followed by rapid thermal annealing in the ambient of argon. The heat treatment temperatures have been varied in the range of 600-l20$0^{\circ}C$ for 20 seconds. The properties of Mo-silicide and the diffusion behaviors of dopant after the heat treatment are investigated using X-ray diffraction, scanning electron microscopy(SEM) , secondary ions mass spectrometry(SIMS), four-point probe and $\alpha-step.$ Annealing at 80$0^{\circ}C$ or higher resulted in conversion of the amorphous phase into predominantly MoS$i_2$and a lower sheet resistance. There was no significant out-diffusion of dopants from both single crystal and polycrystalline silicon substrate into molybdenum silicide layers during annealing.

• Conservation Science in Museum
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• v.14
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• pp.37-60
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• 2013

Conservation and analysis of wall painting Goguryeo was performed to classify the unknown fragments. The conservation naked eye observation, optical microscopy, and infrared examination were carried out in order to figure out the structure, quality of constituting materials, and damages such as cracks, and discolored fragments of colored areas. Based on such investigation, conservation was proceeded. and it was completed with strengthening the weakened pigment layer of wall blocks. In addition tombs where the wall painting fragments were excavated were investigated by making comparison with gelatin dry plates and copies possessed by National Museum of Korea. According to the result, they were Kaemachong, Gosan-ri Tomb No.1 Gamsinchong, and Wonbong-ri Tomb. The components of colors with which Goguryeo wall painting fragments were painted and the mineral pigments of the wall layer were analyzed. Portable µ-XRF spectrometer and X-ray diffractometer were employed. It showed that lime (CaCO₃) used for the wall layer, and the brown color is hematite(Fe₂O₃) and cerusite (PbCO₃) and lead oxide(PbO) were identified. In the red color, cinnabar (HgS) were detected.

• Korean Journal of Materials Research
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• v.22 no.7
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• pp.379-383
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• 2012

$TiO_2$ thin films consisting of positively charged poly(diallyldimethylammonium chloride)(PDDA) and negatively charged titanium(IV) bis(ammonium lactato) dihydroxide(TALH) were successfully fabricated on glass beads by a layer-by-layer(LBL) self-assembly method. The glass beads used here showed a positive charge in an acid range and negative charge in an alkaline range. The glass beads coated with the coating sequence of(PDDA/TALH)n showed a change in the surface morphology as a function of the number of bilayers. When the number of bilayers(n) of the(PDDA/TALH) thin film was 20, Ti element was observed on the surface of the coated glass beads. The thin films coated onto the glass beads had a main peak of the (101) crystal face and were highly crystallized with XRD diffraction peaks of anatase-type $TiO_2$ according to an XRD analysis. In addition, the $TiO_2$ thin films showed photocatalytic properties such that they could decompose a methyl orange solution under illumination with UV light. As the number of bilayers of the(PDDA/TALH) thin film increased, the photocatalytic property of the $TiO_2$-coated glass beads increased with the increase in the thin film thickness. The surface morphologies and optical properties of glass beads coated with $TiO_2$ thin films with different coating numbers were measured by field emission scanning electron microscopy(FE-SEM), X-ray diffraction(XRD) and by UV-Vis spectrophotometry(UV-vis).

• Korean Journal of Materials Research
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• v.21 no.11
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• pp.587-591
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• 2011

The effect of the precipitator (NaOH, $NH_4OH$) and the amount of the precipitator (150, 200, 250, 300 ml) on the formation of $Fe_3(PO_4)_2$, which is the precursor used for cathode material $LiFePO_4$ in Li-ion rechargeable batteries was investigated by the co-precipitation method. A pure precursor of olivine $LiFePO_4$ was successfully prepared with coprecipitation from an aqueous solution containing trivalent iron ions. The acid solution was prepared by mixing 150 ml $FeSO_4$(1M) and 100 ml $H_3PO_4$(1M). The concentration of the NaOH and $NH_4OH$ solution was 1 M. The reaction temperature (25$^{\circ}C$) and reaction time (30 min) were fixed. Nitrogen gas (500 ml/min) was flowed during the reaction to prevent oxidation of $Fe^{2+}$. Single phase $Fe_3(PO_4)_2$ was formed when 150, 200, 250 and 300 ml NaOH solutions were added and 150, 200 ml $NH_4OH$ solutions were added. However, $Fe_3(PO_4)_2$ and $NH_4FePO_4$ were formed when 250 and 300 ml $NH_4OH$ was added. The morphology of the $Fe_3(PO_4)_2$ changed according to the pH. Plate-like lenticular shaped $Fe_3(PO_4)_2$ formed in the acidic solution below pH 5 and plate-like rhombus shaped $Fe_3(PO_4)_2$ formed around pH 9. For the $NH_4OH$, the pH value after 30 min reaction was higher with the same amount of additions of NaOH and $NH_4OH$. It is believed that the formation mechanism of $Fe_3(PO_4)_2$ is quite different between NaOH and $NH_4OH$. Further investigation on this mechanism is needed. The prepared samples were characterized by X-ray diffraction (XRD), scanning electron microscopy (SEM), and the pH value was measured by pH-Meter.

• Applied Chemistry for Engineering
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• v.31 no.2
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• pp.179-186
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• 2020

In this study, chitosan/zeolite composites were prepared by using basalt-based zeolite impregnated with aqueous chitosan solution for the adsorptive separation of CO₂. The prepared composites were characterized by scanning electron microscopy (SEM), Fourier-transform infrared (FT-IR) spectroscopy, thermogravimetric analysis (TGA), X-ray photoelectron spectroscopy (XPS), and nitrogen adsorption analysis. In addition, the adsorption equilibrium isotherms for CO₂ and N₂ were measured at 298 K using a volumetric adsorption system, and the results were analyzed by applying adsorption isotherm equations (Langmuir, Freundlich, and Sips) and energy distribution function. It was found that CO₂ adsorption capacities were well correlated with the structural characteristics of chitosan and zeolite, and the ratio of elements [N/C, Al/(Si + Al)] formed on the surface of the composite. Moreover, the CO₂/N₂ adsorption selectivity was calculated under the mixture conditions of 15 V : 85 V, 50 V : 50 V, and 85 V : 15 V using the Langmuir equation and the ideal adsorption solution theory (IAST).