• 한국진공학회:학술대회논문집
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• 한국진공학회 2010년도 제39회 하계학술대회 초록집
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• pp.252-252
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• 2010

AIZTO (Al-In-Sn-ZnO) thin film was deposited on glass substrate at room temperature by facing target sputtering (FTS) system. The FTS system was designed to array two targets facing each other. Two different kinds of targets were installed on FTS system. We used the ITO (In2O3 90wt%, SnO2 10wt%) target and the AZO (ZnO 98wt%, Al2O3 2wt%). AIZTO films were deposited in each of the applied power of the targets. The electrical and structural properties of the as-deposited AIZTO thin films were then examined by hall-effect measurement, and by using atomic force microscope (AFM), X-ray diffractometer (XRD), and energy dispersive x-ray spectroscopy (EDX). The optical property was measured by an UV-VIS spectrometer.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2010년도 제39회 하계학술대회 초록집
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• pp.71-71
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• 2010

Copper oxide thin films were deposited on the p-type Si(100) by r.f. magnetron sputtering as a function of different substrate temperature. The deposited copper oxide thin films were investigated by atomic force microscopy (AFM), scanning electron microscopy (SEM), spectroscopic ellipsometry (SE), X-ray diffraction (XRD), and X-ray photoelectron spectroscopy (XPS). The SEM and SE data show that the thickness of the copper oxide films was about 170 nm. AFM images show that the surface roughness of copper oxide films was increased with increasing substrate temperature. As the substrate temperature increased, monoclinic CuO (111) peak appeared and the crystal size decreased while the monoclinic CuO (-111) peak was independent on the substrate temperature. The oxidation states of Cu 2p and O 1s resulted from XPS were not affected on the substrate temperature. The contact angle measurement was also studied and indicated that the surface of copper oxide thin films deposited high temperature has more hydrophobic surface than that of deposited at low temperature.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2014년도 제46회 동계 정기학술대회 초록집
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• pp.173.2-173.2
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• 2014

Thin nitride thin films were synthesized by reactive radio-frequency magnetron sputtering in the ultra high vacuum (UHV) chamber. To control the characteristics of thin films, tin nitride thin films were obtained various argon and nitrogen gas mixtures, especially low nitrogen gas ratios. Tin nitride thin films were analyzed with alpha step, scanning electron microscopy (SEM), X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS), and 4 point probe measurement. The result of alpha step and SEM showed that the thickness of thin nitride thin films were decreased with increasing nitrogen gas ratios. The metallic tin structure was decreased and the amorphous tin nitride structure were observed by XRD with higher nitrogen gas ratios. The oxidation state of tin and nitride were studied with high resolution Sn 3d and N 1s XP spectra.

• 한국분말재료학회지
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• 제6권2호
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• pp.171-177
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• 1999

Ti-45.2at.%Ni-5at.%Cu and Ti-40.2at.%Ni-10atat.%Cu alloy powders were fabricated by gas atomization process. The microstructures, Shape, hardness and phase transformation behaviors of the powders were investigated by means of optical microscopy, scanning electron microscopy, micro-hardness measurement, x-ray diffraction analyses and differential scanning calorimetry. The hardness of the Ti-Ni-XCu alloy powders decreased as Cu-content increased. The x-ray diffraction analyses were carried out for powders without heat treatment, and those that treated at 85$0^{\circ}C$ for an hour in a vaccum state($10^5$ torr) and then quenched into ice water. The intensity of B$19^t$ phase increased with heat treating. The monoclinic B$19^t$ martensite was formed in the Ti-Ni-XCu alloy powders during cooling.

• 한국분말야금학회:학술대회논문집
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• 한국분말야금학회 2006년도 Extended Abstracts of 2006 POWDER METALLURGY World Congress Part2
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• pp.1039-1040
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• 2006

Vacuum degassing is essential in the preparation of RS P/M aluminum alloys to remove adsorbates and for the decomposition of hydrated-$Al_{2}O_3$ on the powder surface. Changes in the surface characteristics during vacuum degassing were investigated by X-ray photoelectron spectroscopy and temperature-programmed desorption measurement. Hydrated-$Al_{2}O_3$ decomposition to crystalline-$Al_{2}O_3$ and hydrogen desorption on the surface of argon gas-atomized aluminum powder occurred at 623 K and 725 K, respectively. This temperature difference suggests that the reaction converting hydrated-$Al_{2}O_3$ to crystalline-$Al_{2}O_3$ during vacuum degassing should be divided into the two reactions $"2Al+Al_{2}O_3{\cdot}3H_2O\;2Al_{2}O_3+6H_{surf}"and"6H_{surf}3H_2"$.

• 한국전기화학회:학술대회논문집
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• 한국전기화학회 2003년도 연료전지심포지움 2003논문집
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• pp.83-88
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• 2003

PtRu alloy and $PtRu-WO_3$ nanocomposite thin-film electrodes for methanol electrooxidation were fabricated by means of a sputtering method. The structural and electrochemical properties of well-defined PtRu alloy thin-film electrodes were characterized using X-ray diffraction, Rutherford backscattering spectroscopy. X-ray photoelectron spectroscopy, and electrochemical measurements. The alloy thin-film electrodes were classified as follows: Pt-based and Ru-based alloy structure. Based on structural and electrochemical understanding of the PtRu alloy thin-film electrodes, the well-controlled physical and (electro)chemical properties of $PtRu-WO_3$, showed superior specific current to that of a nanosized PtRu alloy catalyst, The homogeneous dispersion of alloy catalyst and well-formed nanophase structure would lead to an excellent catalytic electrode reaction for high-performance fuel cells. In addition, the enhanced catalytic activity in nanocomposite electrode was found to be closely related to proton transfer in tungsten oxide using in-situ electrochemical transmittance measurement.

• E2M - 전기 전자와 첨단 소재
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• 제9권10호
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• pp.1013-1018
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• 1996

The annealing effects of Au/Te/Au/n-GaAs structure was investigated by using x-ray diffraction, scanning electron microscope, the specific contact resistance and I-V measurement. Increasing the annealing temperature, the intensity of Au-Ga peak by X-ray diffraction was increased. The Ga$\_$2/Te$\_$3/peak got evident for the samples annealed at 400.deg. C and GaAs peak by recrystallization appeared for the samples annealed at 500.deg. C. The variation from the schottky to low resistance contact was confirmed by I-V curve. The lowest value of the specific contact resistance of the samples annealed at 500.deg. C was 3.8*10$\^$-5/.ohm.-cm$\^$2/ but the value increased above 600.deg. C.

• 대한기계학회논문집B
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• 제33권1호
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• pp.1-8
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• 2009

Recently microscale biofluid flows have been receiving large attention in various research areas. However, most conventional imaging techniques are unsatisfactory due to difficulties encountered in the visualization of microscale biological flows. Recent advances in optics and digital image processing techniques have made it possible to develop several advanced micro-PIV/PTV techniques. They can be used to get quantitative velocity field information of various biofluid flows from visualized images of tracer particles. In this paper, as new advanced micro-PIV techniques suitable for biofluid flow analysis, the basic principle and typical applications of the time-resolved micro-PIV and X-ray micro-PIV methods are explained. As a 3D velocity field measurement technique for measuring microscale flows, holographic micro-PTV method is introduced. These advanced PIV/PTV techniques can be used to reveal the basic physics of various microscale biological flows and will play an important role in visualizing veiled biofluid flow phenomena, for which conventional methods have many difficulties to analyze.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2006년도 학술대회 및 기술세미나 논문집 디스플레이 광소자
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• pp.85-88
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• 2006

The transport properties of amorphous selenium typical of the material used in direct conversion x-ray imaging devices are reported. The effects of As addition on the carrier mobility and recombination lifetime in amorphous selenium (a-Se) films have been studied using the moving photocarrier grating (MPG) technique. We have found an increase in hole drift mobility and recombination lifetime, especially when 0.3% As is added into a-Se film, whereas electron mobility decreases with As addition due to the defect density. The transport properties for As doped a-Se films obtained by using MPG technique have been compared with the drift mobilities of holes and electrons obtained by time of flight (TOF) measurement.

• Journal of Welding and Joining
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• 제7권4호
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• pp.46-55
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• 1989

Zirconia coatings are performed by the plasma spraying on the substrate of Al-Si alloy. In case of plasma sprayed ceramic coatings, it is important to control properly residual stress occurred during cooling process. Residual stress in coating layer varies with sprayed conditions and is influenced greatly by the coating layer thickness. Surface residual stress due to coating layer thickness is measured by X-ray diffraction method and the residual stress in coating layer is estimated by the deflection of coating layer when the restraint force in substrate was removed. When zirconia was coated on the substrate, tensile residual stress remains on zirconia coated surface layer. The tensile stress is increased to 0.35mm thickness and after 0.45mm thickness it is decreased abrouptly. A thick bond and composite coating reduce the zirconia surface stress and composite coating controls effectively the thick zirconia surface stress.