• 천문학논총
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• 제36권3호
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• pp.47-63
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• 2021

와이즈/네오와이즈 자료를 사용하여 1형 활동은하핵의 근적외선 장기 변광 특성을 살펴보았다. 활동은하핵은 밀리퀘이사 목록을 사용해 가시광에서의 등급 제한을 두어 선정하였고, 여러 번의 다중시점 측광 자료를 확보하기 위해 황도북극과 황도남극에 가까운 대상으로 한정하였다. 이후 와이즈와 네오와이즈 데이터베이스에서 해당 대상들의 측광 자료를 추출하였다. 일부 근적외선에서 검출되지 않은 경우와 관측 횟수가 지나치게 적은 경우를 제외하고 총 73개의 1형 퀘이사 및 활동은 하핵, 140개의 측광학적으로 선택된 활동은하핵 후보에 대해 W1 (3.4 ㎛), W2 (4.6 ㎛) 밴드 광도곡선을 구성하고 이를 이용해 변광 분석을 수행하였다. 변광 여부를 판단하기 위해 초과 분산 값과 변광의 유의확률 P_var를 계산하였다. 초과 분산이 포아송 오차에 의해 추정되는 오차값보다 큰 경우, 그리고 P_var이 0.95보다 크거나 같은 경우를 변광으로 판단했는데, 활동은하핵 73개 중 19개, 활동은하핵 후보 140개 중 12개가 W1, W2 밴드 모두에서 변광 대상으로 판단되었다. W1 밴드보다 W2 밴드에서 변광 대상으로 판단되는 숫자가 작게 나타났는데, 이는 긴 파장으로 갈수록 변광의 정도가 작아짐을 시사하는 것으로 보인다. 약 9 ~ 26%의 대상들이 근적외선 변광을 보였다. 감쇠 랜덤워크 모형을 사용하여 변광 폭(σ)과 완화 시간(τ), W1과 W2 밴드 사이의 시간 지연 등을 추정하였다. 변광 폭 및 완화시간은 W1 등급과 큰 상관관계를 보이지 않았으며, 두 변수 사이에도 특별히 두드러지는 상관관계가 나타나지 않았다. 단, 감쇠 랜덤워크 모형을 사용해서 시간 규모를 추정할 때 광도곡선의 분량이 충분한지를 감안하면, 완화시간이 짧은 대상들에 대해서는 변광 폭과 완화시간이 음의 상관관계를 보인다고도 볼 수 있다. 대상의 개수가 통계적으로 유의미한 결과를 제시하기에는 부족하다. X선 광도와 변광 특성을 비교했을 때에는 상관관계를 찾아보기 어려웠으나, 앞으로 얻어질 X선 탐사자료와 전천 스펙트럼 탐사자료와 결합한 추가 연구가 기대된다. 전체 대상 중에서는 시간에 따라 (W1-W2) 색이 변하는 것으로 판단되는 흥미로운 대상이 4개가 존재했는데, 이들의 특성에 대해서는 추후 연구가 더 필요할 것으로 전망한다.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2016년도 제50회 동계 정기학술대회 초록집
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• pp.251-251
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• 2016

For several decades, industrial processes consume a huge amount of raw water for various objects that consequently results in the generation of large amounts of wastewater. Wastewaters are consisting of complex mixture of different inorganic and organic compounds and some of them can be toxic, hazardous and hard to degrade. These effluents are mainly treated by conventional technologies such are aerobic and anaerobic treatment and chemical coagulation. But, these processes are not suitable for eliminating all hazardous chemical compounds form wastewater and generate a large amount of toxic sludge. Therefore, other processes have been studied and applied together with these techniques to enhance purification results. These include photocatalysis, absorption, advanced oxidation processes, and ozonation, but also have their own drawbacks. In recent years, electrochemical techniques have received attention as wastewater treatment process that could be show higher purification results. Among them, boron doped diamond (BDD) attract attention as electrochemical electrode due to good chemical and electrochemical stability, long lifetime and wide potential window that necessary properties for anode electrode. So, there are many researches about high quality BDD on Nb, Ta, W and Si substrates, but, their application in effluents treatment is not suitable due to high cost of metal and low conductivity of Si. To solve these problems, Ti has been candidate as substrate in consideration of cost and property. But there are adhesion issues that must be overcome to apply Ti as BDD substrate. Al, Cu, Ti and Nb thin films were deposited on Ti substrate to improve adhesion between substrate and BDD thin film. In this paper, BDD films were deposited by hot filament chemical vapor deposition (HF-CVD) method. Prior to deposition, cleaning processes were conducted in acetone, ethanol, and isopropyl alcohol (IPA) using sonification machine for 7 min, respectively. And metal layer with the thickness of 200 nm were deposited by DC magnetron sputtering (DCMS). To analyze microstructure X-ray diffraction (XRD, Bruker gads) and field emission scanning electron microscopy (FE-SEM, Hitachi) were used. It is confirmed that metal layer was effective to adhesion property and improved electrode property. Electrochemical measurements were carried out in a three electrode electrochemical cell containing a 0.5 % H2SO4 in deionized water. As a result, it is confirmed that metal inter layer heavily effect on BDD property by improving adhesion property due to suppressing formation of titanium carbide.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2015년도 제49회 하계 정기학술대회 초록집
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• pp.65-65
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• 2015

In this talk, I will introduce two topics. The first topic is the polymer light emitting diodes (PLEDs) using graphene oxide quantum dots as emissive center. More specifically, the energy transfer mechanism as well as the origin of white electroluminescence in the PLED were investigated. The second topic is the facile synthesis of eco-friendly III-V colloidal quantum dots and their application to light emitting diodes. Polymer (organic) light emitting diodes (PLEDs) using quantum dots (QDs) as emissive materials have received much attention as promising components for next-generation displays. Despite their outstanding properties, toxic and hazardous nature of QDs is a serious impediment to their use in future eco-friendly opto-electronic device applications. Owing to the desires to develop new types of nanomaterial without health and environmental effects but with strong opto-electrical properties similar to QDs, graphene quantum dots (GQDs) have attracted great interest as promising luminophores. However, the origin of electroluminescence (EL) from GQDs incorporated PLEDs is unclear. Herein, we synthesized graphene oxide quantum dots (GOQDs) using a modified hydrothermal deoxidization method and characterized the PLED performance using GOQDs blended poly(N-vinyl carbazole) (PVK) as emissive layer. Simple device structure was used to reveal the origin of EL by excluding the contribution of and contamination from other layers. The energy transfer and interaction between the PVK host and GOQDs guest were investigated using steady-state PL, time-correlated single photon counting (TCSPC) and density functional theory (DFT) calculations. Experiments revealed that white EL emission from the PLED originated from the hybridized GOQD-PVK complex emission with the contributions from the individual GOQDs and PVK emissions. (Sci Rep., 5, 11032, 2015). New III-V colloidal quantum dots (CQDs) were synthesized using the hot-injection method and the QD-light emitting diodes (QLEDs) using these CQDs as emissive layer were demonstrated for the first time. The band gaps of the III-V CQDs were varied by varying the metal fraction and by particle size control. The X-ray absorption fine structure (XAFS) results show that the crystal states of the III-V CQDs consist of multi-phase states; multi-peak photoluminescence (PL) resulted from these multi-phase states. Inverted structured QLED shows green EL emission and a maximum luminance of ~45 cd/m2. This result shows that III-V CQDs can be a good substitute for conventional cadmium-containing CQDs in various opto-electronic applications, e.g., eco-friendly displays. (Un-published results).

• 대한방사선기술학회지:방사선기술과학
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• 제37권1호
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• pp.1-6
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• 2014

유방촬영용 방사선발생장치의 성능 관리 및 품질관리에 적용되는 관전압과 관전류량을 IEC(International Electrotechnical Commission; 국제 전기 기술위원회) 60601-2-45에서 제시한 표준을 근거로 시험하고 분석한 결과 다음과 같은 결론을 얻었다. 관전압에 따른 제조년도별 표준편차 값은 2001~2010 사이에서 3.15로 가장 크게 나타났고, 관전류량에 따른 제조년도별 표준편차 값은 2000년 이전에서 6.38로 가장 크게 나타났으며, 2011년 이후에 제조된 장치에서는 PAE(Percent Average Error; 백분률표준오차)의 표준편차가 비교적 적게 나타났다. 이는 최근에 제조된 유방촬영용 방사선발생장치의 관전압과 관전류량이 정확한 성능을 유지하고 있음을 알 수 있다. 본 연구결과를 기초자료로 활용하여 유방촬영용 방사선발생장치의 성능 및 품질 관리를 유지하므로 현재 식품의약품안전청의 "진단용 방사선발생장치의 안전관리에 관한 규칙"에서 규정하고 있는 3년 검사주기 동안에 자가 점검으로 방사선발생장치의 방사선에 대한 안전성 확보와 사용하는 X선 장치의 성능을 일관성(constancy) 있게 유지하도록 함으로서 궁극적으로 방사선에 대한 국민피폭선량을 줄일 수 있는 기대효과가 있을 것으로 기대된다.

• 한국신재생에너지학회:학술대회논문집
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• 한국신재생에너지학회 2005년도 제17회 워크샵 및 추계학술대회
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• pp.561-566
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• 2005

Polycrystalline silicon films were deposited using hot wire CVD (HWCVD). The deposition of silicon thin films was approached by the theory of charged clusters (TCC). The TCC states that thin films grow by self-assembly of charged clusters or nanoparticles that have nucleated in the gas phase during the normal thin film process. Negatively charged clusters of a few nanometer in size were captured on a transmission electron microscopy (TEM) grid and observed by TEM. The negatively charged clusters are believed to have been generated by ion-induced nucleation on negative ions, which are produced by negative surface ionization on a tungsten hot wire. The electric current on the substrate carried by the negatively charged clusters during deposition was measured to be approximately $-2{\mu}A/cm^2$. Silicon thin films were deposited at different $SiH_4$ and $H_2$ gas mixtures and filament temperatures. The crystalline volume fraction, grain size and the growth rate of the films were measured by Raman spectroscopy, X-ray diffraction and scanning electron microscopy. The deposit ion behavior of the si1icon thin films was related to properties of the charged clusters, which were in turn controlled by the process conditions. In order to verify the effect of the charged clusters on the growth behavior, three different electric biases of -200 V, 0 V and +25 V were applied to the substrate during the process, The deposition rate at an applied bias of +25 V was greater than that at 0 V and -200 V, which means that the si1icon film deposition was the result of the deposit ion of charged clusters generated in the gas phase. The working pressures had a large effect on the growth rate dependency on the bias appled to the substrate, which indicates that pressure affects the charging ratio of neutral to negatively charged clusters. These results suggest that polycrystalline silicon thin films with high crystalline volume fraction and large grain size can be produced by control1ing the behavior of the charged clusters generated in the gas phase of a normal HWCVD reactor.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2008년도 추계학술대회 논문집 Vol.21
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• pp.11-11
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• 2008

ZnO has a very large exciton binding energy (60 meV) as well as thermal and chemical stability, which are expected to allow efficient excitonic emission, even at room temperature. ZnO based electronic devices have attracted increasing interest as the backplanes for applications in the next-generation displays, such as active-matrix liquid crystal displays (AMLCDs) and active-matrix organic light emitting diodes (AMOLEDs), and in solid state lighting systems as a substitution for GaN based light emitting diodes (LEDs). Most of these electronic devices employ the electrical behavior of n-type semiconducting active oxides due to the difficulty in obtaining a p-type film with long-term stability and high performance. p-type ZnO films can be produced by substituting group V elements (N, P, and As) for the O sites or group I elements (Li, Na, and K) for Zn sites. However, the achievement of p-type ZnO is a difficult task due to self-compensation induced from intrinsic donor defects, such as O vacancies (Vo) and Zn interstitials ($Zn_i$), or an unintentional extrinsic donor such as H. Phosphorus (P) doped ZnO thin films were grown on c-sapphire substrates by radio frequency magnetron sputtering with various Ar/ $O_2$ gas ratios. Control of the electrical types in the P-doped ZnO films was achieved by varying the gas ratio with out post-annealing. The P-doped ZnO films grown at a Ar/ $O_2$ ratio of 3/1 showed p-type conductivity with a hole concentration and hole mobility of $10^{-17}cm^{-3}$ and $2.5cm^2/V{\cdot}s$, respectively. X-ray diffraction showed that the ZnO (0002) peak shifted to lower angle due to the positioning of $p^{3-}$ ions with a smaller ionic radius in the $O^{2-}$ sites. This indicates that a p-type mechanism was due to the substitutional Po. The low-temperature photoluminescence of the p-type ZnO films showed p-type related neutral acceptor-bound exciton emission. The p-ZnO/n-Si heterojunction LEO showed typical rectification behavior, which confirmed the p-type characteristics of the ZnO films in the as-deposited status, despite the deep-level related electroluminescence emission.

• 폴리머
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• 제35권2호
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• pp.157-160
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• 2011

본 연구에서는 전자빔을 이용하여 poly(dimethyl siloxane)(PDMS)을 개질하였으며 그 특성 변화를 분석하였다. PDMS 시트를 기존의 열경화법을 통해 제조한 후 20에서 200 kGy의 흡수선량P로 전자빔을 조사하였고, 조사된 시트들의 특성을 팽윤도 및 접촉각 측정, 만능시험분석기(UTM), 열중랑분석기(TGA), X선 광전자 분광기(XPS)들을 이용해 분석하였다. 팽윤도 측정, UTM 및 TGA 결과, 전자빔 조사에 의해 PDMS 시트의 가교 밀도가 증가함에 따라 조사된 PDMS 시트의 팽윤도는 순수한 것에 비해 최대 24%까지 감소하였고 압축강도와 열분해온도는 순수한 것에 대비 각각 최대 2.5 MPa와 $10^{\circ}C$까지 증가함을 확인하였다. 또한, 접촉각 측정과 XPS 분석 결과를 토대로 전자빔 조사에 의한 산화 반응에 의하여 PDMS 표면에 친수성 관능기들이 형성되기 때문에 PDMS 표면의 젖음성은 순수한 것에 비해 최대 24%까지 향상됨을 확인하였다.

• 센서학회지
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• 제6권5호
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• pp.407-413
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• 1997

기판온도 $300^{\circ}C$에서 열증착법에 의해 p형 <100> Si 기판위에 CuPc(Copper Phthalocyanine) 결정 박막을 증착하였다. X선 회절분석으로부터 CuPc 박막은 a-축 방향으로 성장하였음을 알 수 있었다. CuPc분자들이 기판면위에 수직인 CuPc/Si박막의 광전특성을 조사하기 위하여 수직방향의 전류-전압 (I-V) 특성을 기판 Si의 특성과 비교 관찰하였다. 저항성 접촉을 위해 기판인 p형 Si위에 전극으로 Au를 증착시켰다. Au/Si 접합에 빛을 조사한 결과 전류는 증가하지만 광기전력효과는 관찰되지 않았다. p형 반도체인 CuPc 박막과 기판 p-Si의 접합은 장벽을 형성하지 않기 때문에 빛을 조사하지 않았을 때의 I-V 특성은 저항성을 나타낸다. 빛을 조사하였을 때 CuPc/Si 접합의 증가된 광전류는 Si 웨이퍼보다 현저하게 큰 것을 알 수 있다. 따라서 CuPc 층이 600 nm 파장에서의 붉은 빛을 현저하게 흡수하여 광전류에 기여하는 다량의 광캐리어를 형성함을 알 수 있다. CuPc/Si 박막은 $J_{sc}$ (short-circuit photocurrent) $4.29\;mA/cm^{2}$와 $V_{oc}$ (open circuit photovoltage) 12 mV의 광기전력 특성을 보여준다.

• Korean Chemical Engineering Research
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• 제57권4호
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• pp.445-454
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• 2019

Layered double hydroxides (LDHs) 나노입자는 특유의 층상형 결정구조에서 기인된 물리화학적 물성 및 생체친화성을 바탕으로 나노-바이오 분야에서 주목을 받고 있다. 바이오 이미징은 질병의 진단과 치료(테라노스틱스, theranostics=therapy+diagnosis)에 다양하게 활용될 수 있는 핵심적인 분야로 차세대 맞춤의학으로의 새로운 패러다임 실현을 위해서 보다 정확하고 빠른 진단기술이 절실히 요구되고 있다. 이를 실현하기 위한 대안으로 나노기술이 접목된 고감도 분자영상 관련 연구들이 활발히 진행되고 있다. 본 총설에서는 LDH 나노입자를 기반으로 하는 바이오 이미징 시스템의 개발동향에 관하여 소개하고 바이오 이미징에 적합한 나노소재의 구조 및 합성 방법에 대하여 설명하였다. 또한 임상 의학에서 현재 많이 사용되고 있는 형광을 이용한 광학영상, 자기공명영상(MRI), 핵의학영상(PET), 컴퓨터 단층 촬영(CT) 등 다양한 분야에서 어떻게 LDH 나노입자를 이용하여 나노 프로브 개발을 할 수 있는지 연구사례를 기술하면서 나노기술과 첨단영상기술이 융합된 획기적인 고감도 나노 바이오 이미징 시스템 개발 및 그 잠재력에 대하여 전망해 보았다.

• Journal of Korean Neurosurgical Society
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• 제62권4호
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• pp.442-449
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• 2019

Objective : Bone mineral density (BMD) is an important consideration during fusion surgery. Although dual X-ray absorptiometry is considered as the gold standard for assessing BMD, quantitative computed tomography (QCT) provides more accurate data in spine osteoporosis. However, QCT has the disadvantage of additional radiation hazard and cost. The present study was to demonstrate the utility of artificial intelligence and machine learning algorithm for assessing osteoporosis using Hounsfield units (HU) of preoperative lumbar CT coupling with data of QCT. Methods : We reviewed 70 patients undergoing both QCT and conventional lumbar CT for spine surgery. The T-scores of 198 lumbar vertebra was assessed in QCT and the HU of vertebral body at the same level were measured in conventional CT by the picture archiving and communication system (PACS) system. A multiple regression algorithm was applied to predict the T-score using three independent variables (age, sex, and HU of vertebral body on conventional CT) coupling with T-score of QCT. Next, a logistic regression algorithm was applied to predict osteoporotic or non-osteoporotic vertebra. The Tensor flow and Python were used as the machine learning tools. The Tensor flow user interface developed in our institute was used for easy code generation. Results : The predictive model with multiple regression algorithm estimated similar T-scores with data of QCT. HU demonstrates the similar results as QCT without the discordance in only one non-osteoporotic vertebra that indicated osteoporosis. From the training set, the predictive model classified the lumbar vertebra into two groups (osteoporotic vs. non-osteoporotic spine) with 88.0% accuracy. In a test set of 40 vertebrae, classification accuracy was 92.5% when the learning rate was 0.0001 (precision, 0.939; recall, 0.969; F1 score, 0.954; area under the curve, 0.900). Conclusion : This study is a simple machine learning model applicable in the spine research field. The machine learning model can predict the T-score and osteoporotic vertebrae solely by measuring the HU of conventional CT, and this would help spine surgeons not to under-estimate the osteoporotic spine preoperatively. If applied to a bigger data set, we believe the predictive accuracy of our model will further increase. We propose that machine learning is an important modality of the medical research field.