• Title/Summary/Keyword: X-ray emission

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HOT GAS HALOS IN EARLY-TYPE GALAXIES AND ENVIRONMENTS

  • Kim, Eunbin;Choi, Yun-Young;Kim, Sungsoo S.
    • Journal of The Korean Astronomical Society
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    • v.46 no.1
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    • pp.33-40
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    • 2013
  • We investigate the dependence of the extended X-ray emission from the halos of optically luminous early-type galaxies on the small-scale (the nearest neighbor distance) and large-scale (the average density inside the 20 nearest galaxies) environments. We cross-match the 3rd Data Release of the Second XMMNewton Serendipitous Source Catalog (2XMMi-DR3) to a volume-limited sample of the Sloan Digital Sky Survey (SDSS) Data Release 7 with $M_r$ < -19.5 and 0.020 < z < 0.085, and find 20 early-type galaxies that have extended X-ray detections. The X-ray luminosity of the galaxies is found to have a tighter correlation with the optical and near infrared luminosities when the galaxy is situated in the low large-scale density region than in the high large-scale density region. Furthermore, the X-ray to optical (r-band) luminosity ratio, $L_X/L_r$, shows a clear correlation with the distance to the nearest neighbor and with large-scale density environment only where the galaxies in pair interact hydrodynamically with seperations of $r_p$ < $r_{vir}$. These findings indicate that the galaxies in the high local density region have other mechanisms that are responsible for their halo X-ray luminosities than the current presence of a close encounter, or alternatively, in the high local density region the cooling time of the heated gas halo is longer than the typical time between the subsequent encounters.

Growth of InGaN on sapphire by GSMBE(gas source molecular beam epitaxy) using $DMH_y$(dimethylhydrazine) as nitrogen source at low temperature (Nitrogen source로 암모니아, $DMH_y$(dimethylhydrazine)을 사용해 Gas-Source MBE로 성장된 InGaN 박막특성)

  • Cho, Hae-Jong;Han, Kyo-Yong;Suh, Young-Suk;Park, Kang-Sa;Misawa, Yusuke
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2004.07b
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    • pp.1010-1014
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    • 2004
  • High quality GaN layer and $In_xGa_{1-x}N$ alloy were obtained on (0001)sapphire substrate using ammonia$(NH_3)$ and dimethylhydrazine$(DMH_y)$ as a nitrogen source by gas source molecular hem epitaxy(GSMBE) respectively. As a result, RHEED is used to investigate the relaxation processes which take place during the growth of GaN and $In_xGa_{1-x}N$. The full Width at half maximum of the x-ray diffraction(FWHM) rocking curve measured from Plane of GaN has exhibitted as narrow as 8 arcmin. Photoluminescence measurement of GaN and $In_xGa_{1-x}N$ were investigated at room temperature, where the intensity of the band edge emission is much stronger than that of deep level emission. In content of $In_xGa_{1-x}N$ epitaxial layer according to growth condition was investigated.

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Growth of High Quality $Cd_{0.96} Zn_{0.04} Te$ Epilayers Used for an Far-infrared Sensor and Radiation Detector

  • Kim, B. J.
    • Transactions of the Korean Society of Machine Tool Engineers
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    • v.11 no.6
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    • pp.111-117
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    • 2002
  • The high quality and a nearly stoichometric growth of $Cd_{1-y} Zn_y$/Te(y=0.04) epilayers have been successfully grown on GaAs substrate by hot wall epitaxy (HWE) by optimizing the growth condition including the preheating treatment and Cd reservoir temperature. The relationship between quality and thickness was examined and best value of FWHM from X-ray rocking curve of 121 arcsec are obtained. Also, emission peaks related to the recombination of free excitons such as the ground state and the first excited state were observed in the PL spectrum at 4.2K. The ($A^0$, X) emission related to Cd vacancy and deep level emission was not measured. These results indicated that the grown CZT/GaAs epilayer was high qualify and purity.

Growth and Characterization of $CuInS_2$ Single Crystal Thin Film by Hot Wall Epitaxy (Hot Wall Epitaxy(HWE) 방법에 의해 성장된 $CuInS_2$)

  • 최승평;홍광준
    • Korean Journal of Crystallography
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    • v.11 no.3
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    • pp.137-146
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    • 2000
  • The stoichiometric mix of evaporating materials for he CuInS₂ single crystal thin films was prepared. To obtain the single crystal thin films, CuINS₂ mixed crystal was deposited on etched semi-insulator GaAs(100) substrate by the hot wall epitaxy(HWE) system. The source and substrate temperature were 640℃ and 430℃, respectively and the thickness of the single crystal thin films was 2 ㎛. The crystalline structure of single crystal thin films was investigated by the photoluminescence and double crystal X-ray diffraction(DCXD). The carrier density and mobility deduced from Hall data are 9.64x10/sup 22//㎥ and 2.95x10/sup -2/ ㎡/V·s, respectively at 293 K. he optical energy gap was found to be 1.53 eV at room temperature. From the photocurrent spectrum obtained by illuminating perpendicular light on the c-axis of the thin film, we have found that the values of spin orbit coupling splitting ΔSo and the crystal field splitting ΔCr were 0.0211 eV and 0.0045 eV at 10K, respectively. From PL peaks measured at 10K, were can assign the 807.7 nm (1.5350 eV) peak to E/sub x/ peak of the free exciton emission, the 810.3 nm(1.5301 eV) peak to I₂ peak of donar-bound exciton emission and the 815.6 nm(1.5201 eV) peak to I₁ peak of acceptor-bound excition emission. In addition, the peak observed at 862.0 nm(1.4383 eV) was analyzed to be PL peak due to donor-acceptor pair(DAP).

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Combined X-ray CT-SPECT System with a CZT Detector

  • Kwon, Soo-Il;Koji Iwata;Hasegawa, B-H
    • Proceedings of the Korean Society of Medical Physics Conference
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    • 2002.09a
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    • pp.379-381
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    • 2002
  • A single CdZnTe detector is tested for suitability in a prototype CT/ SPECT system designed to acquire both emission and transmission data. The detector has the size of 1${\times}$l-cm$^2$ with 4${\times}$4 1.5${\times}$l.5mm$^2$ pixellated anodes. Since the detector is smaller than imaged object, we translated it in an arc centered at the x-ray tube to image larger objects. Pulse counting electronics with very short shaping time (50 ns) are used to satisfy high photon rates in x-ray imaging, and response linearity up to 3${\times}$10$\^$5/ counts per second per detector element is achieved. The energy resolution of 122-keV gamma-ray is measured to be 14%. We have characterized the system performance by scanning a radiographic resolution phantom .and the Hoffman brain phantom. The spatial resolution of CT and SPECT are about 1 mm and 7 mm, respectively.

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Evaluation of Relative Emission of Image Plate by Using Relative Sensitivity in Computed Radiography System (컴퓨터 방사선영상시스템에서 비감도를 이용한 영상판의 상대적 발광량 평가)

  • Seoung, Youl-Hun
    • The Journal of the Korea Contents Association
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    • v.14 no.11
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    • pp.355-361
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    • 2014
  • The aim of the present study was to evaluate a relative emission of image plate (IP) in computed radiography (CR) system by using relative sensitivity in film/screen methods. The characteristic curve was obtained by using the uniform aluminum 11-step wedge penetrometer. X-ray exposure factors on radiographic digital image were 50 kVp, 10 mAs. We adjusted zero of all parameter of algorithms (MUSICA) so proximate to raw data and applied to 200 of exposure class. Modeling on relative emission of IP are used IP without fading time and IP after 4 hours, 8 hours, 12 hours, 24 hours in the respective storage after X-ray exposure. The results of this study showed that the sensitivity point density at the measuring of relative sensitivity in CR was suited pixel values of the 2000 easy to relatively measure the characteristic curve and when relative sensitivity is decreased, the amount of light emitted from the image signal for generating was also decreased. In conclusion, the proposed method of measurement of relative sensitivity can be utilized to evaluate the quantity of relative emission of IP in CR system.

QUALITY EVALUATION OF TECHNOLOGY OF AGRICULTURAL PRODUCTS

  • Chen, Pictiaw
    • Proceedings of the Korean Society for Agricultural Machinery Conference
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    • 1996.06c
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    • pp.171-190
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    • 1996
  • Quality evaluation of agricultural products has been a subject of interest to many researches for many years. As a results, several nondestructive techniques for quality evaluation of agricultural products have been developed. These methods are based on the detection of various physical properties that correlate well with certain quality factors of the products. This paper presents an overview of various quality evaluation techniques that are based on one of the following properties : density, firmness , vibration characteristic , X-ray and gamma ray transmission, optical reflectance and transmission , electrical properties, aromatic volatile emission, and nuclear magnetic resonance (NMR). The sophistication of nondestructive methods has evolved rapidly with modern technologies. The use of various modern image acquisition techniques, such as solid state TV camera, line-scan camera, X-ray scanning , ultrasonic scanning and NMR imaging, in conjunction with image-processing te hniques has provided new opportunities for researchers to develop many new and improved techniques for nondestructive quality evaluation of agricultural products.

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Effects of Selective Growth on Electron-emission Properties of Conical-type Carbon Nanotube Field-emitters (원추형 기판 위에 탄소 나노튜브의 선택적 성장이 전계방출 특성에 미치는 영향)

  • Kim, Bu-Jong;Noh, Young-Rok;Park, Jin-Seok
    • Journal of the Semiconductor & Display Technology
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    • v.11 no.1
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    • pp.61-65
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    • 2012
  • In this study, for use of carbon nanotubes (CNTs) as a cold cathode of x-ray tubes, we examine the effects of selective growth of CNTs on their field emission properties and long-term stability. The selective growth of CNTs was performed by selectively etching the catalyst layer which was used for CNTs' nucleation. CNTs were grown on conical-type tungsten substrates using an inductively-coupled plasma chemical vapor deposition system. For all the grown CNTs, their morphologies and microstructures were analyzed by field-emission scanning electron microscope and Raman spectroscopy. The electron-emission properties of CNTs and the long-term stability of emission currents were measured and characterized according to the CNTs' growth position on the substrate.

SED modelling of broadband emission in the pulsar wind nebula 3C 58

  • Kim, Seungjong;An, Hongjun
    • The Bulletin of The Korean Astronomical Society
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    • v.44 no.2
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    • pp.55.1-55.1
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    • 2019
  • We investigate broadband emission properties of the pulsar wind nebula (PWN) 3C 58 using a spectral energy distribution (SED) model. We attempt to match simultaneously the broadband SED and spatial variations and emission about 3C 58 in X-ray band. We further the model to explain a possible far-IR feature of which a hint is recently suggested in 3C 58: a small bump at ~10^11 GHz in the PLANCK and Herschel band. While external dust emission may easily explain the observed bump, it may be internal emission of PWNe implying an another additional population of particles. Although significance for the bump in 3C 58 is not higher than other PWNe, here we explore possible origins of the IR bump using the emission model and find that a population of electrons with GeV energies can explain the bump. If it is produced in the PWN, it may provide new insights into particle acceleration and flows in PWNe.

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Herschel/PACS spectroscopy of the supernova remnant G21.5-0.9

  • Cha, Heechan;An, Hongjun
    • The Bulletin of The Korean Astronomical Society
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    • v.45 no.1
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    • pp.53.1-53.1
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    • 2020
  • We present Herschel Space Observatory far-IR observations of the supernova remnant(SNR) G21.5-0.9. We search PACS-IFU data for 63um [O I], 88um [O III], 157um [C II] emission lines and detect the [O II] and the [C II]. We then produce emission line maps to check the spatial distribution of the elements. We compare the maps to Radio, IR-photometrics, and X-ray images in order to understand interaction of the ejecta with the Pulsar Wind Nebula(PWN) and physical environment in the SNR.

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