• The Bulletin of The Korean Astronomical Society
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• v.39 no.2
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• pp.93.2-93.2
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• 2014

Planetary nebulae (PN) are the last stages of evolution of intermediate mass (1-8 Msolar) stars. Their shapes are thought to result from interactions between the present-day, fast (emerging white dwarf) and previously ejected, slow (red giant) stellar winds. The observation of young, bright PN, NGC7027 and BD+30 3639, was made on July 7, 2014 using the 2.7m Harlan J. Smith telescope at the McDonald Observatory. IGRINS with high spatial (0.27") and high spectral ($7.5km\;s^{-1}$) resolution will provide more nebular lines and excitation/abundances to constrain the morphology and kinematics of the Nebula and the PDRs. Combined with other archival data (X-ray, 2MASS, WISE, Spitzer, Herschel) for PN, high-resolution IR spectroscopy will yield insight into poorly understood aspects of PN morphologies and the late stages of binary star evolution.

• Publications of The Korean Astronomical Society
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• v.30 no.2
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• pp.573-576
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• 2015

Recent discovery of $2M_{\odot}$ neutron stars in white dwarf-neutron star binaries, PSR J1614-2230 and PSR J0348+0432, has given strong constraints on the maximum mass of neutron stars. On the other hand, all well-measured neutron star masses in double neutron star binaries are still less than $1.5M_{\odot}$. These observations suggest that the neutron star masses in binaries may depend on the evolution process of neutron star binaries. In addition, recent works on LMXB (low-mass X-ray binaries) provides us the possibility of estimating the masses and radii of accreting neutron stars in LMXBs. In this talk, we discuss the implications of recent neutron star observations to the neutron star equation of states and the related astrophysical problems. For the evolution of neutron star binaries, we also discuss the possibilities of super-Eddington accretion onto the primary neutron stars.

• Journal of Powder Materials
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• v.6 no.4
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• pp.314-319
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• 1999

The solid state reaction by mechanical alloying(MA) generally proceeds by lowering the free energy as the result of a chemical reaction at the interface between the two adjacent layers. However, Lee et $al.^{1-5)}$ reported that a mixture of Cu and Ta, the combination of which is characterized by a positive heat of mixing of +2kJ/mol, could be amorphized by mechanical alloying. This implies that there exists an up-hill process to raise the free energy of a mixture of pure Cu and la to that of an amorphous phase. It is our aim to investigate to what extent the MA is capable of producing a non-equilibrium phase with increasing the heat of mixing. The system chosen was the ternary $Cu_{30}Ta_{ 70-x}Mo_ x$ (x=35, 10). The mechanical alloying was carried out using a Fritsch P-5 planetary mill under Ar gas atmosphere. The MA powders were characterized by the X-ray diffraction with Cu-K $\alpha$ radiation, thermal analysis, electron diffraction and TEM micrographs. In the case of x=35, where pure Cu powders were mixed with equal amount of pure Ta and Mo powders, we revealed the formation of bcc solid solution after 150 h milling but its gradual decomposition by releasing fcc-Cu when milling time exceeded 200 h. However, an amorphous phase was clearly formed when the Mo content was lowered to x=10. It is believed that the amorphization of ternary $Cu_{30}Ta_{60}Mo_{10}$ powders is essentially identical to the solid state amorphization process in binary $Cu_{30}Ta_{70}$ powders.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.7 no.2
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• pp.301-308
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• 1997

The LNT ceramics which has the large negative temperature coefficient of resonant frequency ($\tau_1$) were manufactured by varying the $TiO_2$ contents. The effects of secondary phase $TiO_2$ which was caused by excess $TiO_2$ on the microstructure, phase transformations and microwave dielectric properties in ($Li_{1/2}Nd_{1/2}$)$TiO_3$ binary system were studied by X-ray and SEM. In case of adding up to 5 mol% $TiO_2$ on LNT, the liquid phase $TiO_2$which was created in the grain boundary of LNT not only increased the bulk density but also caused the nonhomogeneous structure of LNT which reduced the microwave dielectric characteristics. But the temperature coefficient of resonant frequency was improved by the 10 mol% addition of $TiO_2$.

• Proceedings of the Korean Vacuum Society Conference
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• 2014.02a
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• pp.304.1-304.1
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• 2014

Flat-panel displays have been growing as an essential everyday product in the current information/communication ages in the unprecedented speed. The forward-coming applications require light-weightness, higher speed, higher resolution, and lower power consumption, along with the relevant cost. Such specifications demand for a new concept-based materials and applications, unlike Si-based technologies, such as amorphous Si and polycrystalline Si thin film transistors. Since the introduction of the first concept on the oxide-based thin film transistors by Hosono et al., amorphous oxide thin film transistors have been gaining academic/industrial interest, owing to the facile synthesis and reproducible processing despite of a couple of shortcomings. The current work places its main emphasis on the binary oxides composed of ZnO and SnO2. RF sputtering was applied to the fabrication of amorphous oxide thin film devices, in the form of bottom-gated structures involving highly-doped Si wafers as gate materials and thermal oxide (SiO2) as gate dielectrics. The physical/chemical features were characterized using atomic force microscopy for surface morphology, spectroscopic ellipsometry for optical parameters, X-ray diffraction for crystallinity, and X-ray photoelectron spectroscopy for identification of chemical states. The combined characterizations on Zn-Sn-O thin films are discussed in comparison with the device performance based on thin film transistors involving Zn-Sn-O thin films as channel materials, with the aim to optimizing high-performance thin film transistors.

• Journal of the Korean Chemical Society
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• v.44 no.6
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• pp.592-599
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• 2000

The fine particles of binary ceramic composite of titania-partially-stabilized zirconia(TPSZ) were synthesized by ultrasonic spray pyrolysis at the various temperatures, compositions and concentrations and the effects of process factors for synthesis on the characteristics of fine particles were discussed. The starting salt solutions were prepared to have the ionic concentrations of 0.025~0.1 M aqueous solutions. The fine particles were prepared to have the compositions of 90~97.5 wt% of $ZrO_2$ and 2.5~10 wt% of $TiO_2$. The temperatures for particle synthesis were regulated to be 400~550$^{\circ}C$ as a drying zone, 800~1100$^{\circ}C$ as a pyrolysis zone. The produced fine particles were collected by a wet process and analyzed to investigate characteristic properties after being dried. The compositions of ceramic fine particles were determined by Inductively Coupled Plasma-Atomic Emission Spectroscopy(ICP-AES) technique and phases, morphologies and particle sizes of those were investigated by Raman Spectroscopy, X-ray diffraction(XRD), Scanning Electron Microscopy(SEM), Transmission Electron Microscopy(TEM) and Particle Size Analyzer(PSA) techniques.

• Applied Chemistry for Engineering
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• v.23 no.6
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• pp.561-566
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• 2012

PtRuW/C catalysts were prepared with the different molar ratios of Pt : Ru : W and their compositions were analyzed by energy dispersive X-ray (EDX). The uniform distribution of particles was observed using transmission electron microscopy (TEM). An average crystalline size of 3.5~5.5 nm was calculated based on x-ray diffraction (XRD) data. The electrochemical properties such as electrochemically active surface areas, current densities, specific activities and poisoning rates, were analyzed via CO stripping, linear sweep voltammetry and chronoamperometry. From the analysis, we observed that ternary alloy catalysts, except $PtRu_2W_2/C$, have higher current densities, specific activities and stabilities than those of commercial binary catalysts. Among all in-house catalysts, Pt5Ru4W/C showed the highest specific activity of $121.05mA{\cdot}m^{-2}$ and the lowest poisoning rate of $0.01%{\cdot}s^{-1}$.

• Proceedings of the Korea Association of Crystal Growth Conference
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• 1999.06a
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• pp.419-431
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• 1999

InP, III-V binary compound semiconductor, single crystal was grown by VGF (vertical gradient freeze) method using quartz ampoule and its electrical optical properties were investigated. Phosphorous powders were put in the bottom of quartz ampoule and Indium metal changed in conical quartz crucible hat was attached at the upper side position inside the quartz ampoule. It was vacuous under the pressure of 10-5 Torr and sealed up. In metal in the quartz crucible was melted at 1070$^{\circ}C$ and phophorous sublimated at 450$^{\circ}C$, there after it was diffused in In melt and so InP composition was formed. By cooling the InP composition melt (2$^{\circ}C$∼5$^{\circ}C$/hr of cooling rate) in range of 1070$^{\circ}C$∼900$^{\circ}C$, InP crystal was grown. the grown InP single crystals were investigated by X-ray analysis and polarized optical microscopy. Electrical properties of them were measured by Van der Pauw method. At the cooling rate of 2$^{\circ}C$/hr, its direction was (111), quality of the ingot ws better upper side of the ingot than lower. It was found that the InP crystals were n-type semiconductor and the carrier concentration, electron mobility and relative resistivity were 1015∼1016/㎤, 2x103∼3x104$\textrm{cm}^2$/Vsec and 2x10-1∼2x10-3Ωcm in the range of 150K∼300K, respectively.

• Journal of Electrochemical Science and Technology
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• v.6 no.2
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• pp.65-74
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• 2015

This work examines the characterization and corrosion behaviour of laser alloyed UNSG10150 steel with three different premixed composition Zn-Sn binary powders using a 4.4 kW continuous wave (CW) Rofin Sinar Nd:YAG laser processing system. The steel alloyed samples were cut to corrosion coupons, immersed in sulphuric acid (0.5 M H₂SO₄) solution at 30℃ using electrochemical technique and investigated for its corrosion behaviour. The morphologies and microstructures of the developed coated and uncoated samples were characterized by Optic Nikon Optical microscope (OPM) and scanning electron microscope (SEM/EDS). Moreover, X-ray diffractometer (XRD) was used to identify the phases present. An enhancement of 2.7-times the hardness of the steel substrate was achieved in sample A₁ which may be attributed to the fine microstructure, dislocations and the high degree of saturation of solid solution brought by the high scanning speed. At scanning speed of 0.8 m/min, sample A₁ exhibited the highest polarization resistance R_p (1081678 Ωcm² ), lowest corrosion current density i_corr (4.81×10⁻⁸A/cm² ), and lowest corrosion rate Cr (0.0005 mm/year) in 0.5 M H₂SO₄. The polarization resistance R_p (1081678 Ωcm² ) is 67,813-times the polarization of the UNSG10150 substrate and 99.9972% reduction in the corrosion rate.

• Proceedings of the Korean Vacuum Society Conference
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• 2011.02a
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• pp.285-285
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• 2011

EUVL (Extreme Ultra Violet Lithography) is one of competitive lithographic technologies for sub-30nm fabrication of nano-scale Si devices that can possibly replace the conventional photolithography used to make today's microcircuits. Among the core EUVL technologies, mask fabrication is of considerable importance since the use of new reflective optics having a completely different configuration compared to those of conventional photolithography. Therefore new materials and new mask fabrication process are required for high performance EUVL mask fabrication. This study investigated the etching properties of SnO2 (Tin Oxide) as a new absorber material for EUVL binary mask. The EUVL mask structure used for etching is SnO2 (absorber layer) / Ru (capping / etch stop layer) / Mo-Si multilayer (reflective layer) / Si (substrate). Since the Ru etch stop layer should not be etched, infinitely high selectivity of SnO2 layer to Ru ESL is required. To obtain infinitely high etch selectivity and very low LER (line edge roughness) values, etch parameters of gas flow ratio, top electrode power, dc self - bias voltage (Vdc), and etch time were varied in inductively coupled Cl2/Ar plasmas. For certain process window, infinitely high etch selectivity of SnO2 to Ru ESL could be obtained by optimizing the process parameters. Etch characteristics were measured by on scanning electron microscopy (SEM) and X-ray photoelectron spectroscopy (XPS) analyses. Detailed mechanisms for ultra-high etch selectivity will be discussed.