• Journal of the Korean Society for Nondestructive Testing
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• v.19 no.5
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• pp.356-362
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• 1999

Based on the assumption that film density increases exponentially with exposure in the industrial radiographic film. an equation representing the characteristic curves of industrial radiographic films and a new density-thickness relation are suggested. The accuracy and reliability of the suggested relation has been tested using radiographs of a carbon steel step wedge with known thickness variation by polychromatic X-ray and ${\gamma}$-ray ($Ir^{192}$). The experimental results were well agreed to the proposed relation in the range of film densities from 1.0 to 3.5 and it was more accurate than the conventional relation. It is also found that ${\gamma}$-ray is more effective in this purpose than polychromatic X-ray, which results in variation of effective linear absorption coefficient due to beam hardening effect as thickness increases. Therefore using the equation and experimentally determined parameters the quantitative evaluation of thickness variation is possible and it can be used to evaluate the depth of local corrosion of pressure vessels in plants.

• Proceedings of the Materials Research Society of Korea Conference
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• 2011.10a
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• pp.19.2-19.2
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• 2011

The $(Sr_{0.75},\;La_{0.25})TiO_3$ (SLTO) ultra-thin films with various thicknesses have been grown on Ti-O terminated $SrTiO_3$(100) substrate using Laser-Molecular Beam Epitaxy (Laser MBE). By monitoring the in-situ specular spot intensity oscillation of reflection high energy electron diffraction (RHEED), we controlled the layer-by-layer film growth. The film structure and topography were verified by atomic force microscopy (AFM) and high resolution thin film x-ray diffraction by the synchrotron x-ray radiation. We have also investigated the electronic band structure using x-ray absorption spectroscopy (XAS). The ultra thin SLTO film exhibits thickness driven metal-insulator transition around 8 unit cell thickness when the film thickness progressively reduced to 2 unit cell. The SLTO thin films with an insulating character showed band splitting in Ti $L_3-L_2$ edge XAS spectrum which is attributed to Ti 3d band splitting. This narrow d band splitting could drive the metal-insulator transition along with Anderson Localization. In optical conductivity, we have found the spectral weight transfer from coherent part to incoherent part when the film thickness was reduced. This result indicates the possibility of enhanced electron correlation in ultra thin films.

• The Korean Journal of Ceramics
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• v.6 no.4
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• pp.354-358
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• 2000

The SnO$_2$film was deposited on a corning glass 1737 substrate by plasma enhanced chemical vapor deposition using a gas mixture of SnCl$_4$, $O_2$, and Ar. The film thickness was measured using $\alpha$-step and was about 9400$\AA$. The conventional X-ray diffractometry and pole figure attachment were used to refine the crystal structure of SnO$_2$ thin film. Six pole figures, (200), (211), (310), (301), (321), and (411), were measured with CoK$_\alpha$ radiation in reflection geometry. The X-ray diffraction data were measured at room temperature using CuK$_\alpha$ radiation with graphite monochromator. The agreement between calculated and observed patterns for the normal direction of SnO$_2$ thin film was not satisfactory due to the severely preferred orientation effect. The Rietveld refinement of heavily textured SnO$_2$ thin film was successfully achieved by adopting the pole density distribution of each reflection obtained from the inverse pole figure as a correction factor for the preferred orientation effect. The R-weighted pattern, R$_wp$, was 15.30%.

• 한국정보디스플레이학회:학술대회논문집
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• 2009.10a
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• pp.370-373
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• 2009

X-ray lithography was employed to fabricate ITO-less high resolution sustain electrodes for plasma display panel (PDP). A polyimide film based X-ray mask and Xray sensitive Ag electrode paste were fabricated to check their effect on the patterning of Ag electrodes with less than 30 ${\mu}m$ in width. The X-ray lithographic method was found to be useful for the high resolution sustain electrode patterns due to the high penetration power and low scattering property of X-ray source.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2002.11a
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• pp.395-398
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• 2002

Many research group started study to develope x-ray detector using thin film transistor from 1970. But realization of TFT based x-ray detector development was caused by progress of thin film transistor liquid crystal display(TFTLCD) device technology in 1990. The main current of TFT technology is display device. Research results expend TFT technology field from display device to sensor manufacture technology. These days many research group in the world realize various digital x-ray detector. In this study, We compare discharge erasing method to visible light erasing method in a-Se based digital x-ray detector. Visible light erasing method is known reset process in direct conversion x-ray detector. Digital x-ray detector using visible light erasing method is not adaptive for conventional x-ray device, because of its thickness. And it is not avaliable for real-time imaging for digital fluoroscopy, because of its long reset time. In this study we overcome these limitations and show new idea for real-time imaging method.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.11a
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• pp.72-72
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• 2009

본 연구에서는 Photoconductor materials 기반의 평판형 X-ray Detector film 제작에 관한 연구를 수행하였다. 기존의 광도전성 물질로 사용되어 오던 비정질 셀레늄(Amorphous seleinum; a-Se) 기반의 디지털 방사선 검출기 보다 높은 신호 및 동작 특성을 가지는 Mercury Iodide(HgI2)와 열적, 전기적 특성이 안정적이며, 소자의 동작특성이 우수한 Lead Oxide(PbO) 기반의 X-ray Detector film의 개발에 있어서 각각 HgI2 및 PbO 두 물질 층을 적정비율에 맞추어 제작함으로써 최적의 X-ray Detector를 구현하고자 하였다. 이는 빠른 영상획득을 통해 기존의 방식이 가지는 문제점을 해결하고 의료기기 디지털화를 구현할 수 있는 차세대 시스템을 개발하고자 하는 것이다. 본 연구에서는 기존의 진공증착법의 두꺼운 대면적 필름의 제조가 어려운 문제점을 해결하고자 Particle In Binder method(PIB) 방법을 이용하여 $3"{\times}3"$사이즈의 두께 $200{\mu}m$의 다결정의 Photoconductor 필름을 제조하여 전기적 특성을 평가하였다. 제작된 필름의 전기적 특성을 dark current, X-선 sensitivity와 SNR(Signal to -Noise Rate) 등을 측정하여 정량적으로 평가 하였다. 기준 실험으로 진행한 DG 2.1 바인더를 사용한 single-HgI2 층에서 보다 높은 sensitivity 값을 보였지만 높은 dark current로 인해 SNR이 떨어지는 결과를 볼 수 있었다. 본 연구에서 제시하는 두 Photoconductor material의 Soaking method를 이용한 실험에서는 single-HgI2에 해당하는 높은 sensitivity 및 저감된 dark current로 인해 높은 SNR 값을 획득하였다. 하지만 습도와 같은 주변 환경에 의한 재현성 문제로 인한 신호값의 불안정성에 대한 문제점도 남아 있으므로, 차후 최적화된 material 제작 공정을 위한 연구가 꾸준히 진행 되어져야 할 것이다.

• Journal of radiological science and technology
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• v.14 no.2
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• pp.55-55
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• 1991

I reduced overexposed X-Ray film image with farmer reduction method and $KMnO_4$ reduction method. The results are as follows : 1. In farmer reduction method, there appears linear decreasing film image density. 2. In $KMnO_4$ reduction method, there appears over proportional reduction. 3. When red prussiate is compared with $KMnO_4$ reduction method, the latter shows more intense reduction. 4. If the reduction solution isn't used within 10 minutes after dilution, it becomes oxidized and the ability is decreased remarkably.

• Journal of Biomedical Engineering Research
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• v.5 no.2
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• pp.149-154
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• 1984

A digital X-ray system was designed using photo-diode arrays. This system consists of the following five sub-units; (1) slit and driving system (2) X-ray detection system (3) data-conversion system (4) computer (5) image display system. Using this system, one can obtain scatter-free, high contrast, digitally formatted, high quality image, as compared with the conventional film-based X-ray system.

• Journal of the Korean Chemical Society
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• v.35 no.5
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• pp.539-544
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• 1991

A method to determine the thickness of silicone resin film on zinc eletroplated steel using X-ray compton scattering was investigated. On the basis of the fact that compton scattering process predominates over photoelectric absorption for the light elements such as C, H, O and Si, the compton scattered line of RhK$_{\alpha}$ was used to determine the thickness of silicone resin. In this method, the standard calibration curve for thickness determination of silicone resin film was found to be linear in the range of 0.2~5.0 ${mu}$m film thickness. The analytical results agreed well with those obtained by the gravimetric method and the accuracy was found to be 0.22 ${mu}$m.

• Journal of radiological science and technology
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• v.16 no.1
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• pp.117-123
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• 1993