• Radiation Oncology Journal
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• v.14 no.4
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• pp.323-332
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• 1996

Purpose : The wedge filter is the most commonly used beam modifying device during radiation therapy Recently dynamic wedge technique is available through the computer controlled asymmetric collimator, independent jaw. But dosimetric characteristics of dynamic wedge technique is not well known. Therefore we evaluate dosimetric characteristics of dynamic wedge compared to conventional fixed wedge. Materials and Methods : We evaluated dosimetric characteristics of dynamic wedge and fixed wedge by ion chamber, film dosimetry and TLD in phantoms such as water, polystyrene and average breast phantom. Six MV x-ray was used in $15{\times}15cm$ field with 15,30 and 45 degree wedge of dynamic/liked wedge system, Dosimeric characteristics are interpreted by Wellhofer Dosimetrie system WP700/WP700i and contralateral breast dose (CBD) with tangential technique was confirmed by TLD. Results : 1) Percent depth dose through the dynamic wedge technique in tissue equivalent phantom was similar to open field irradiation and there was no beam hardening effect compared to fixed wedge technique. 2) Isodose line composing wedge angle of dynamic wedge is more straight than hard wedge. And dynamic wedge technique was able to make any wedge angle on any depth and field size. 3) The contralateral breast dose in primary breast irradiation was reduced by dynamic wedge technique compared to fixed wedge. When the dynamic wedge technique was applied, the scatter dose was similar to that of open field irradiation. Conclusion : The dynamic wedge technique was superior to fixed wedge technique in dosimetric characteristics and may be more useful in the future.

• Journal of the Korean Magnetics Society
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• v.10 no.1
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• pp.37-41
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• 2000

We investigated the magnetoresistance effect and the exchange coupling of antiferromagnetic Fe$_2$O$_3$ spin-valve film. The X-ray diffractions of the spin-valve films having a different thickness of a $\alpha$-Fe$_2$O$_3$ were measured. The exchange coupling field (H$_{ex}$) between Fe$_2$O$_3$ and pinned NiFe layer was increased from 13.5 Oe to 84.5 Oe, as the thickness of Fe$_2$O$_3$ increased from 400 $\AA$ to 800 $\AA$. The surface roughness of $\alpha$-Fe$_2$O$_3$spin-valves increased with the increase of $\alpha$-Fe$_2$O$_3$thickness. Therefore, the increase of H$_{ex}$ will be due to the increase of the interface roughness. The MR ratios as a function of Fe$_2$O$_3$ thickness was not changed. And H$_{ex}$ increased by the increment of magnetostatic coupling between Fe$_2$O$_3$ and NiFe (pinned-layer) due to the increment of interface roughness. H$_{ex}$ depends on the surface roughness, but the magnetoresistance ratio doesn't doesn't.

• Journal of the Korea Academia-Industrial cooperation Society
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• v.16 no.4
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• pp.2391-2400
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• 2015

Weather proof steels are used for steel bridges due to its high corrosion resistance under atmospheric conditions. However, instead of forming stabilized rust layers, general rust occurs on weather proof steels under high humidity condition close to seawater or shady places. In Japan, therefore, they perform rust stabilization treatment instead of unpainted treatment due to severe atmospheric conditions. However, most of domestic weather proof steels were constructed unpainted in the form of closed box-girder, which makes the periodical repetition of dry and wet hard to occur. For the steel bridges constructed on the Han river, the evaporation of water, dew condensation due to temperature change, and stagnant water due to rain affect harmfully on the formation of passive film on weather proof steels. Thus, in this research, in order to analyze corrosion properties inside the closed box-girder for the unpainted weather proof steel bridge in the waterworks safety zone, multiple ways of analysis such as observation with eyes, cellophane-tape test, steel thickness measurement, surface corrosion potential measurement, electron microscope analysis, and X-ray diffraction analysis of the rust were performed. As a result, unstable rust layer was observed inside the closed box-girder, and severe corrosion was observed on the top and bottom of the flanges due to the effects of stagnant water caused by rain, dew condensation, and de-icing materials.

• Journal of the Korean institute of surface engineering
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• v.49 no.6
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• pp.580-586
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• 2016

Cr-Si-Al-N coating with different Si content were deposited by hybrid physical vapor deposition (PVD) method consisting of unbalanced magnetron (UBM) sputtering and arc ion plating (AIP). The deposition temperature was $300^{\circ}C$, and the gas ratio of $Ar/N_2$ were 9:1. The CrSi alloy and aluminum targets used for arc ion plating and sputtering process, respectively. Si content of the CrSi alloy targets were varied with 1 at%, 5 at%, and 10 at%. The phase analysis, composition and microstructural analysis performed using x-ray diffraction (XRD) and field emission scanning electron microscopy (FESEM) including energy dispersive spectroscopy (EDS), respectively. All of the coatings grown with textured CrN phase (200) plane. The thickness of the Cr-Si-Al-N films were measured about $2{\mu}m$. The friction coefficient and removal rate of films were measured by a ball-on-disk test under 20N load. The friction coefficient of all samples were 0.6 ~ 0.8. Among all of the samples, the removal rate of CrSiAlN (10 at% Si) film shows the lowest values, $4.827{\times}10^{-12}mm^3/Nm$. As increasing of Si contents of the CrSiAlN coatings, the hardness and elastic modulus of CrSiAlN coatings were increased. The morphology and composition of wear track of the films was examined by scanning electron microscopy (SEM) and energy dispersive spectroscopy, respectively. The surface energy of the films were obtained by measuring of contact angle of water drop. Among all of the samples, the CrSiAlN (10 at% Si) films shows the highest value of the surface energy, 41 N/m.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.23 no.2
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• pp.108-113
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• 2013

Chalcopyrite material $CuInSe_2$ (CIS) is known to be a very prominent absorber layer for high efficiency thin film solar cells. Current interest in the photovoltaic industry is to identify and develop more suitable materials and processes for the fabrication of efficient and cost-effective solar cells. Various processes have been being tried for making a low cost CIS absorber layer, this study obtained the CIS nanoparticles using commercial powder of 6 mm pieces for low cost CIS absorber layer by high frequency ball milling and cryogenic milling. And the CIS absorber layer was prepared by paste coating using milled-CIS nanoparticles in glove box under inert atmosphere. The chalcopyrite $CuInSe_2$ thin films were successfully made after selenization at the substrate temperature of $550^{\circ}C$ in 30 min, CIS solar cell of Al/ZnO/CdS/CIS/Mo structure prepared under various deposition process such as evaporation, sputtering and chemical vapor deposition respectively. Finally, we achieved CIS nanoparticles solar cell of electric efficient 1.74 % of Voc 29 mV, Jsc 35 $mA/cm^2$ FF 17.2 %. The CIS nanoparticles-based absorber layers were characterized by using EDS, XRD and HRSEM.

• Korean Chemical Engineering Research
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• v.49 no.6
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• pp.758-763
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• 2011

In this work, polymer composite electrolytes were prepared by a blend of poly(methyl methacrylate) (PMMA) and poly(ethylene oxide) (PEO) as a polymer matrix, propylene carbonate as a plasticizer, $LiClO_4$ as a salt, and by containing a different content of $TiO_2$, by using the solution casting method. The crystallinity and ionic conductivity of the polymer electrolytes was evaluated using X-ray diffraction(XRD) and AC impedance method, respectively. The morphology of composite electrolyte film was analyzed by SEM method. From the experimental results, by increasing the $TiO_2$ content, crystallinity of PEO was reduced, and ionic conductivity was increased. In particular, the ionic conductivity was dependent on the content of $TiO_2$ and showed the highest value 15 wt%. However, when $TiO_2$ content exceeds 15 wt%, the ionic conductivity was decreased. According to the surface morphology, the ionic conductivity was decreased because the polymer composite electrolytes showed a heterogenous morphology of fillers due to immiscibility or aggregation of the filler within the polymer matrix.

• Tuberculosis and Respiratory Diseases
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• v.45 no.5
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• pp.975-983
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• 1998

Purpose: Frequent deletion of 3p in numerous cancer including lung cancer suggests the presence of tumor suppressor gene. 3p has been analysed by RFLP and PCR-LOH of microsatellite locus. In this study, we observed the deletion of 3p in Korean NSCLC by PCR-LOH of 4 microsatellite loci and investigated the clinical significance. Method: 62 surgically resected NSCLC DNA and normal lung DNA have been analysed by PCR-LOH at three dinucleotide[D3S1228 (3p14.1-14.3), D3S1067 (3p14.3-21.1), D3S1029 (3p21.1-21.3)] and one tetranucleotide[D3S1537 (3p 22-24.2)] repeat microsatellite loci. Results: Among 59 informative cases, 3p deletion by PCR-LOH at four microsatellite loci was found in 31 patients(52.5%). 3p deletion were found in 55% of squamous cell lung cancer and 47% of adenocarcinoma patients. No significant difference has been found in clinical parameters such as staging, smoking and survival according to the status of 3p deletion. Conclusion: Deletions in 3p have played an important role in Korean NSCLC though no clinical significance was detected.

• Journal of the Korean Vacuum Society
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• v.18 no.1
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• pp.1-8
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• 2009

Hydrophilic Surface modification of Polysarene (PS) was performed by Atmospheric Pressure Plasma (APP). Air or 0, gases were used for carrier gases and RF power was changed from 150 to 350 W. We controlled the treatment time as 1 time to 4 time passing through the plasma region. when the carrier gas was air, the water contact angle on the PS surface was decreased from $91^{\circ}$ to $20^{\circ}$. And the surface energy increased from 45.74 dyne/cm to 68.48 dyne/cm. In case of the $O_2$ plasma treatment, at 300 W of RF power and 4 times treatment, the water contact angle on the PS. Surface was decreased from $91^{\circ}$ to $17^{\circ}$ and the surface energy was increased from 45.74 dyne/cm to 69.73 dyne/cm. The surface energy was increased by polar force not by dispersion force. Improvement of surface properties can be explained by the formation of new hydrophilic groups which is identified as C-O, C=O by XPS analysis. The contact angle of APP treated PS surface kept in air was increased with time elapse, but maintained same value when it was kept in water. We treated the PS surface by APP and deposited Cu as $4,000\;{\AA}$ and $8,000\;{\AA}$ by thermal evaporation. The adhesion between sample and Cu thin film improvement of treated PS surface against untreated sample. could be verifiable by Tape test (ASTM D3359)

• Korean Journal of Materials Research
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• v.11 no.3
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• pp.215-220
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• 2001

Amorphous Ti-Si-N films of approximately 200 and 650 thickness were reactively sputtered on Si wafers using a dc magnetron sputtering system at various $N_2$/Ar flow ratios. Their barrier properties between Cu (750 ) and Si were investigated by using sheet resistance measurements, XRD, SEM, RBS, and AES depth profiling focused on the effect of the nitrogen content in Ti-Si-N thin film on the Ti-Si-N barrier properties. As the nitrogen content increases, first the failure temperature tends to increase up to 46 % and then decrease. Barrier failure seems to occur by the diffusion of Cu into the Si substrate to form Cu$_3$Si, since no other X- ray diffraction intensity peak (for example, that for titanium silicide) than Cu and Cu$_3$Si Peaks appears up to 80$0^{\circ}C$. The optimal composition of Ti-Si-N in this study is $Ti_{29}$Si$_{25}$N$_{46}$. The failure temperatures of the $Ti_{29}$Si$_{25}$N$_{465}$ barrier layers 200 and 650 thick are 650 and $700^{\circ}C$, respectively.ely.

• Journal of Sensor Science and Technology
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• v.24 no.6
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• pp.404-411
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• 2015

A stoichiometric mixture of evaporating materials for $BaAl_2Se_4$ single crystal thin films was prepared from horizontal electric furnace. To obtain the single crystal thin films, $BaAl_2Se_4$ mixed crystal was deposited on thoroughly etched semi-insulating GaAs(100) substrate by the Hot Wall Epitaxy (HWE) system. The source and substrate temperatures were $610^{\circ}C$ and $410^{\circ}C$, respectively. The crystalline structure of the single crystal thin films was investigated by the photoluminescence and double crystal X-ray diffraction (DCXD). The carrier density and mobility of $BaAl_2Se_4$ single crystal thin films measured from Hall effect by van der Pauw method are $8.29{\times}10^{-16}cm^{-3}$ and $278cm^2/vs$ at 293 K, respectively. The temperature dependence of the energy band gap of the $BaAl_2Se_4$ obtained from the absorption spectra was well described by the Varshni's relation, $E_g(T)=3.4205eV-(4.3112{\times}10^{-4}eV/K)T^2/(T+232 K)$. The crystal field and the spin-orbit splitting energies for the valence band of the $BaAl_2Se_4$ have been estimated to be 249.4 meV and 263.4 meV, respectively, by means of the photocurrent spectra and the Hopfield quasicubic model. These results indicate that the splitting of the ${\Delta}so$ definitely exists in the ${\Gamma}_5$ states of the valence band of the $BaAl_2Se_4/GaAs$ epilayer. The three photocurrent peaks observed at 10 K are ascribed to the $A_1$-, $B_1$-exciton for n =1 and $C_{31}$-exciton peaks for n=31.