• Journal of Advanced Navigation Technology
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• v.22 no.5
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• pp.449-455
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• 2018

For the size reduction, we propose a microstrip-fed monopole antenna with half X-slot in the radiation patch and cover WLAN dual band 2.4 GHz band (2.4 ~ 2.484 GHz) and 5 GHz band (5.15 ~ 5.825 GHz). The frequency characteristics such as impedance bandwidth and resonant frequencies were satisfied by optimizing the numerical values of various parameters, while the reflection loss in 5 GHz was improved by using defected ground structure (DGS). The proposed antenna is designed and fabricated on a FR-4 substrate with dielectric constant 4.3, thickness of 1.6 mm, and size of $24{\times}41mm^2$. The measured impedance bandwidths (${\mid}S_{11}{\mid}{\leq}-10dB$) of fabricated antenna are 450 MHz (2.27 ~ 2.72 GHz) in 2.4 GHz band and 1340 MHz (4.79 ~ 6.13 GHz) in 5 GHz band which sufficiently satisfied with the IEEE 802. 11n standard in dual band. In particular, radiation patterns which are stable as well as relatively omni-direction could be obtained, and the gain of antennas in each band was 1.31 and 1.98 dBi respectively.

• Journal of Astronomy and Space Sciences
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• v.28 no.4
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• pp.299-304
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• 2011

As more satellites are designed to downlink their observed image data through the X-band frequency band, it is inevitable that the occupied bandwidth of a target satellite will overlap with that of other X-band downlink satellites. For sun-synchronized low earth orbit satellites, in particular, it can be expected that two or more satellites be placed within the looking angle of a ground station antenna at the same time. Due to the overlapping in the frequency band, signals transmitted from the adjacent satellites act as interferers, leading to degraded link performance between target satellite and ground station. In this paper, link analysis was initiated by modeling the radiation pattern of ground station antenna through a validated Jet Propulsion Laboratory peak envelope model. From the relative antenna gain depending on the offset angle from center axis of maximum antenna directivity, the ratio of received interference signal level to the target signal level was calculated. As a result, it was found that the degradation increased when the offset angle was within the first point of radiation pattern. For a 7.3 m antenna, serious link degradation began at an offset angle of 0.4 degrees. From this analysis, the link performance of the coming satellite passes can be recognized, which is helpful to establish an operating procedure that will prevent the ground station from receiving corrupted image data in the event of a degraded link.

• Proceedings of the Korean Vacuum Society Conference
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• 2014.02a
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• pp.320-320
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• 2014

Amorphous silicon alloy (a-Si) solar cells and modules have been receiving a great deal of attention as a low-cost alternate energy source for large-scale terrestrial applications. Key to the achievement of high-efficiency solar cells using the multi-junction approach is the development of high quality, low band-gap materials which can capture the low-energy photons of the solar spectrum. Several cell designs have been reported in the past where grading or buffer layers have been incorporated at the junction interface to reduce carrier recombination near the junction. We have investigated profiling the composition of the a-SiGe alloy throughout the bulk of the intrinsic material so as to have a built-in electrical field in a substantial portion of the intrinsic material. As a result, the band gap mismatch between a-Si:H and $a-Si_{1-x}Ge_x:H$ creates a barrier for carrier transport. Previous reports have proposed a graded band gap structure in the absorber layer not only effectively increases the short wavelength absorption near the p/i interface, but also enhances the hole transport near the i-n interface. Here, we modulated the GeH4 flow rate to control the band gap to be graded from 1.75 eV (a-Si:H) to 1.55 eV ($a-Si_{1-x}Ge_x:H$). The band structure in the absorber layer thus became like a U-shape in which the lowest band gap was located in the middle of the i-layer. Incorporation of this structure in the middle and top cell of the triple-cell configuration is expected to increase the conversion efficiency further.

• Journal of the Institute of Electronics Engineers of Korea TC
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• v.48 no.6
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• pp.34-40
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• 2011

From the present paper researched about the Design of Image Rejection SSB Modulator for X-Band Monopulse RADAR using Waveguide Hybrid Coupler. Generally, SSB modulator mixes IF(RF) and LO signals, and then it converts to RF(IF) frequency band. In this case, in order to transmit one sideband from RF band, SSB modulator is demanded the removal of image and LO signal. The balanced mixer was designed using waveguide hybrid coupler and crystal mixer diode to mix LO and IF signal. And also the IF Amplifier was designed for IF(+) and IF(-) signal generation which have $90^{\circ}$ phase differences which are suitable in two crystal mixer diode inputs. In order to maintain a high electric reliability from high frequency band the waveguide and IF amplifier's case were manufactured with aluminum using deep brazing techniques. The test result of SSB modulator, LO and sideband signal rejection ratio were 14.2dB and 18.5dB respectively.

• The Journal of the Institute of Internet, Broadcasting and Communication
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• v.23 no.6
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• pp.145-155
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• 2023

A radial combiner with high efficiency characteristics in the X-band was designed and manufactured using a waveguide and matching structure. In particular, in order to manufacture it in a small size, a dual waveguide to coaxial transition structure was applied that allows two ports to be matched to one waveguide. Applying this structure makes it possible to manufacture smaller than typical coaxial to waveguide radial combiner. As a result of measurement in the X-band band of 9.2~10GHz, the return loss was less than -18.408dB and the output insertion loss was less than 0.206dB, and the output combining efficiency was obtained as high as 95.37% or more. It is expected that it can be used in the combining part for high output transmitters in the millimeter wave band in the future. In particular, the range of use is expected to increase by reducing the size and weight.

• Journal of Sensor Science and Technology
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• v.13 no.4
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• pp.277-281
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• 2004

$Hg_{1-x}Cd_{x}Te$ (MCT) was grown by hot wall epitaxy. Prior to the MCT growth, the CdTe (111) buffer layer was grown on the GaAs substrate at the temperature of $590^{\circ}C$ for 15 min. When the thickness of the CdTe buffer layer was $5{\mu}m$ or thicker, the full width at half maximum values obtained from the x-ray rocking curves were found to significantly decrease. After a good quality CdTe buffer layer was grown, the MCT epilayers were grown on the CdTe (111)/GaAs substrate at various temperatures in situ. The crystal quality for those epilayers was investigated by means of the x-ray rocking curves and the photocurrent experiment. The photoconductor characterization for the epilayers was also measured. The energy band gap of MCT was determined from the photocurrent measurement and the x composition rates from the temperature dependence of the energy band gap were turned out.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2010.06a
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• pp.379-379
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• 2010

$Hg_{1_x}Cd_xTe$ (MCT) was grown by hot wall epitaxy. Prior to the MCT growth, the CdTe (111) buffer layer was grown on the GaAs substrate at the temperature of $590^{\circ}C$ for 15 min. When the thickness of the CdTe buffer layer was $5\;{\mu}m$ or thicker, the full width at half maximum values obtained from the x-ray rocking curves were found to significantly decrease. After a good quality CdTe buffer layer was grown, the MCT epilayers were grown on the CdTe (111) /GaAs substrate at various temperatures in situ. The crystal quality for those epilayers was investigated by means of the x-ray rocking curves and the photocurrent experiment. The photoconductor characterization for the epilayers was also measured. The energy band gap of MCT was determined from the photocurrent measurement and the x composition rates from the temperature dependence of the energy band gap were turned out.

• Transactions on Control, Automation and Systems Engineering
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• v.1 no.1
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• pp.69-74
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• 1999

Adaptive algorithms based on gradient adaptation have been extensively investigated and successfully joined with active noise/vibration control applications. The Filtered-X LMS algorithm became one of the basic feedforward algorithms in such applications, but is not fully understood yet. Effects of cancellation path model on the Filtered-X LMS algorithm have investigated and some useful properties related to stability were discovered. Most of the results stated that the error in the cancellation path model is undesirable to the Filtered X LMS. However, we started convergence analysis of Filtered-X LMS based on the assumption that erroneous model does not always degrade its performance. In this paper, we present a way of optimizing the cancellation path modern in order to enhance the convergence speed by introducing intentional phase error. Carefully designed intentional phase error enhances the convergence speed of the Filtered X LMS algorithm for pure tone noise suppression application without any performance loss at steady state.

• JSTS:Journal of Semiconductor Technology and Science
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• v.9 no.2
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• pp.117-123
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• 2009

$Pb_{x}Cd_{1-x}S$ films are prepared in the composition range of 0.05${\leq}x{\leq}$0.25, using a chemical bath deposition growth technique under optimum conditions amide at realizing good photo response. The x-ray diffraction results show that the films are of PbS-CdS composite with individual CdS and PbS planes. The films exhibit two direct band gaps, 2.4 eV attributed to CdS, while the other varies continuously from 2.4 eV to 1.3 eV. The films surface morphology is smooth with crystallite, whose grain size increases with increasing mole fraction (x). The decrease in band gap with increase in lead concentration suggests inter-metallic compound of PbS (Eg=0.41 eV) with CdS (Eg=2.4 eV)

• Journal of the Korean Institute of Telematics and Electronics
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• v.24 no.3
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• pp.445-452
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• 1987

In this paper, a model for characteristics in the AlxGa1-xAs layer of MODFET's is presented. The characteristics of conduction band in the AlxGa1-xAs layer is analyzed with the Fermi-Dirac statistics. And using the conduction band energy which is calculated with the numerical calculation method (false-Positon method), the variations of the electric-field distribution, the ionized donor concentration, and the two-dimensional electron gas density with gate voltage are calculated, respectively. The channel formation process for the parasitic MESFET operation in the MOD structure is also analyzed, and the characteristics in the AlxGa1-xAs layer is analytically modeled. The throretical results describe well the general characteristics in the MOD structure.