• Journal of Magnetics
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• v.22 no.1
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• pp.100-103
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• 2017

We studied the microstructure and magnetic properties of Fe nanosized powder synthesized by the pulsed wire evaporation method. The x-ray diffraction spectrum confirmed that this powder had a pure ${\alpha}$-Fe phase. Scanning electron microscope and transmission electron microscope measurements indicated that the prepared powder had uniform spherical shape with core-shell structure. The mean powder size was about 35 nm and the thickness of the surface passivation layer was about 5 nm. Energy dispersive X-ray spectroscopy measurement indicated that the surface passivation layer was iron oxide. Magnetic field dependent magnetization measurement at room temperature showed that the maximum magnetization of the prepared powder was 177.1 emu/g at 1 T.

• Proceedings of the KWS Conference
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• 2000.10a
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• pp.90-93
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• 2000

Residual stress is generated in the structures as a result of irregular elastic-plastic deformation during fabrication processes such as welding, heat treatment, and mechanical processing. There are several factors attributed to the origin of residual stresses, tensile or compressive. The stresses can be determined by destructive ways or nondestructive ways by using X-ray or neutron diffraction. This paper presented application of neutron diffraction technique to the residual stress measurement using 20 mm thick welded stainless steel plate(100$\times$100 $\textrm{mm}^2$)

• Proceedings of the Korean Vacuum Society Conference
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• 2015.08a
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• pp.175.1-175.1
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• 2015

CuSn thin films were deposited by rf magnetron co-sputtering method with pure Cu and Sn metal targets with a variety of rf powers. CuSn thin films were studied with a surface profiler (alpha step), X-ray photoelectron spectroscopy (XPS), X-ray induced Auger electron spectroscopy (XAES), X-ray diffraction (XRD), and contact angle measurement. The thickness of CuSn thin films was fixed at $200{\pm}10nm$ and deposition rate was calculated by the measured with a surface profiler. From the survey XPS spectra, the characteristic peaks of Cu and Sn were observed. Therefore, CuSn thin films were successfully synthesized on the Si (100) substrate. The oxidation state and chemical environment of Cu and Sn were investigated with the binding energy regions of Cu 2p XPS spectra, Sn 3d XPS spectra, and Cu LMM Auger spectra. Change of the crystallinity of the films was observed with XRD spectra. Using contact angle measurement, surface free energy (SFE) and wettability of the CuSn thin films were studied with distilled water (DW) and ethylene glycol (EG).

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.26 no.2
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• pp.58-61
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• 2016

Bulk GaN crystals were grown by the basic ammonothermal method. The c-plane GaN templates grown by hydride vapor phase epitaxy were used as seed crystals and sodium metal, amide, and azide were added as a mineralizer. The growth conditions are at temperatures from $500{\sim}600^{\circ}C$ and pressures from 2~3 kbar. The growth rate for the c-axis was increased with increasing the operating pressure. Average dislocation density was measured $1{\times}10^5/cm^2$ by the cathodoluminescence measurement. The full-width at half-maximum of the X-ray diffraction rocking curve for (002) reflection was approximately 270 arcsec for Ga face and 80 arcsec for N face.

• Journal of the Korean Society for Heat Treatment
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• v.30 no.5
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• pp.215-221
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• 2017

The effect of austenitizing temperature on the degree of carbides re-solutionizing, mean graine size, hardness and the volume fraction of retaind austenite ($V_{\gamma}$) etc., has been studied by means of metallography, X-ray diffractometry and hardness measurement in STD 11 tool steel. As austenitizing temperature increases, the amount of alloying elements which is re-dissolved into matrix increases, resulting in increase of $V_{\gamma}$, due to the chemical stabilization of austenite. The Vickers hardness value decreases with increasing austenitizing temperature, which is attributed to grain size as well the volume fractions of $V_{\gamma}$ and carbides. Theoretical diffraction intensity of (200) ${\alpha}^{\prime}$, (211) ${\alpha}^{\prime}$ (200) ${\gamma}$ and (220) ${\gamma}$ peaks obtained by $CuK_{\alpha}$ chracteristics X-ray (${\lambda}=0.15429nm$) was calculated, and quantitative analysis of $V_{\gamma}$ could be carried out by X-ray diffraction method. The resultant value is well coincided with the value obtained by image analysis method. When the quenched specimen is tempered above $200{\sim}400^{\circ}C$ for 30 min, the transition carbides i.e., MC and $M_2C$ in the size of about 20 nm begin to precipitate at $300^{\circ}C$.

• Journal of the Korean Magnetics Society
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• v.1 no.1
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• pp.1-5
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• 1991

The magnetic properties of the polycrystalline ${(Fe_{2}O_{3})}_{1-x-y}{(In_{2}O_{3})}_{x}{(Eu_{2}O_{3})}_{y}$(x=0.01, y=0.02과 x=0.02, y=0.03) have been studied by the methods of X-ray diffraction, $M\"{o}ssbauer$ effect, and magnetic hysteresis measurement. The X-ray diffraction patterns show that the samples have a same crystal structure as $\alpha-Fe_{2}O_{3}$. From the analysis of the temperature dependence of the quadrupole splitting and average half-width, it is found that the Morin transition occurs in the sample of x=0.01 and y=0.02 and the spin angle defined as the angle between the [111] crystal axis and antiferromagnetic vector, changes from about $35^{\circ}$ to the (111) plane as increasing the temperature in the sample of x=0.02 and y=O.03. The temperature dependence of magnetic hyperfine field is analyzed by using the spin-wave theory. The isomer shift values at room temperature are found to be given by about 0.35mm/s for the samples which means that the Fe ions belong to $3^{+}ion$. The temperature dependence of isomer shift was analyzed by using the Debye model.

• Journal of Sensor Science and Technology
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• v.7 no.6
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• pp.386-393
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• 1998

We have carried out the measurements of complex dielectric constants with impedance/gain-phase analyzer using capacitor method and the experiments of high temperature X-ray powder diffraction with X-ray diffractometer using ${\theta}-2{\theta}$ scan method for the KTP single crystal which has the premium nonlinear optical properties. From the results of high temperature X-ray powder diffraction experiments, we have found that KTP does not undergo structural phase transition below $900^{\circ}C$. It is clear that KTP undergoes structural phase transition around $900^{\circ}C$ and belongs to orthorhombic above $900^{\circ}C$ still. However, we have applied phenomenological relation of dielectric relaxation to the results of complex dielectric measurement and have found that relaxation mechanism of KTP well satisfies the Cole-Cole relation over the temperature range from $-78^{\circ}C$ to $200^{\circ}C$. And also the relaxation time well satisfies the Vogel-Fulcher relation. It is regarded that the hopping and thermally activated diffusion mechanism may control the conduction behavior of KTP above $200^{\circ}C$.

• Journal of the Korean Ceramic Society
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• v.26 no.3
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• pp.315-322
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• 1989

Li2O-Al2O3-SiO2 system glasses contained P2O5, TiO2 and ZrO2as the nucleating agents were melted and formed. The glass was subsequently heated first to nucleate and then to grow the crystals. At constant nucleating agent content the base glass compositions were varied and the influences of these variations on the crystallization behaviour were investigated. The study was made by measurement of thermal expansion coefficient, differential thermal analysis, X-ray diffraction analysis, scanning electron microscope observation and transmission measurement of crystallized glass specimen in visible region. It was shown that the content of crystalline phase decreased with increasing SiO2 content as well as decresing Li2O in the base glass compositions. As the result of X-ray diffrection analysis, the major crystal was $\beta$-quartz solid solution. The degree of crystallinity which was calculated using the noncrystalline scattering methods increased in S-shape with increasing heat treatment time. This change was similar to that in thermal expansion coefficient. The transmissions of 5mm thick samples were 80-90% in visible ray region.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2006.06a
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• pp.159-160
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• 2006

$AgGaSe_2$ single crystal thin films grown by using hot wall epitaxy (HWE) system. The single crystal thin films were investigated by photoluminescence and double crystal X-ray diffraction(DCXD) measurement. From the photoluminescence measurement of $AgGaSe_2$ single crystal thin film, we observed free excition ($E_x$) observable only in high quality crystal and neutral bound exciton ($D^{\circ}$,X) having very strong peak intensity. And, the full width at hall maximum and binding energy of neutral donor bound excition were 8 meV and 14.1 meV, respectively. By Haynes rule, an activation energy of impurity was 141 meV.

• Korean Journal of Materials Research
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• v.19 no.4
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• pp.203-206
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• 2009

$Sn_XSe_{100-X}$ (15|X|30) alloys have been studied to explore their suitability as phase change materials for nonvolatile memory applications. The phase change characteristics of thin films prepared by a Radio Frequency (RF) magnetron co-sputtering system were analyzed by an X-ray diffractometer and 4-point probe measurement. A phase change static tester was also used to determine their crystallization under the pulsed laser irradiation. X-ray diffraction measurements show that the transition in sheet resistance is accompanied by crystallization. The amorphous state showed sheet resistances five orders of magnitude higher than that of the crystalline state in $Sn_XSe_{100-X}$ (x = 15, 20, 25, 30) films. In the optimum composition, the minimum time of $Sn_XSe_{100-X}$ alloys for crystallization was 160, 140, 150, and 30ns at 15mW, respectively. The crystallization temperature and the minimum time for crystallization of thin films were increased by increasing the amount of Sn, which is correlated with the activation energy for crystallization.