• Journal of the Korean Magnetics Society
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• v.7 no.2
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• pp.82-89
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• 1997

Dependence of magnetoresistance on the thickness of Cu, type and thickness of buffer layer, and the stacking number of multilayer in the form buffer /$[Co(17{\AA}/Cu(t{\AA})]_{20}$ were investigated. To evaluate effect of annealing on this samples, X-ray diffraction analysis, vibrating sample magnetometer analysis, and magnetoresistance measurement (4-probe method) were performed. The magnetoresistance ratio exhibits a maximum of 21% for the multilayer with Cu thickness of 24$\AA$ and Fe buffer layer thickness of 50$\AA$. Deposition of film under low base pressure induces in increase magnetoresistance ratio by preventing oxidation. The multilayer annealed below 30$0^{\circ}C$ temperature allowed larger textured grain without loss in the periodicity. Magnetoresistance ratios of the multilayer with Cu thickness of 24$\AA$ and 36$\AA$ were increased due to the increase in the antiferromagnetically coupled fraction after annealing.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.9 no.1
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• pp.39-42
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• 1999

Nitrogen-doped SiC(3C) (N-SiC(3C)) epliayers were grown on Si(111) substrate at $1250^{\circ}C$ using chemical vapor deposition (CVD) technique by pyrolyzing tetramethylsilane(TMS) in $H_{2}$ carrier gas. SiC(3C) layer was doped using $NH_{3}$ during the CVD growth to be n-type conduction. Physical properties of N-SiC(3C) were investigated by Fourier transform infrared (FTIR) spectroscopy, X-ray diffraction (XRD) patterns, Raman spectroscopy, cross-sectional transmission electron microscopy (XTEM), Hall measurement, and current-voltage(I-V) characteristcs of the N-SiC(3C)/Si(p) diode. N-SiC(3C) layers exhibited n-type conductivity. The n-type doping of SiC(3C) could be controlled by nitrogen dopant using $NH_{3}$ at low temperature.

• Journal of the Korean Vacuum Society
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• v.21 no.5
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• pp.258-263
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• 2012

Fe-diluted Si alloys grown on p-type Si (100) substrates by pulsed-laser deposition method were studied for structural, electrical, and magnetic properties. The X-ray diffraction patterns for these alloy samples showed a few of peaks with cubic structures such as FeSi, $Fe_3Si$, and $Fe_4Si$. The Fe-composition in alloys are confirmed as Fe atomic percent about 1.25~6.49 % from energy dispersive spectroscopy measurement. The resistivity as a function of the reciprocal temperature was indicated an exponential increase with two activation energies of 5.21 and 7.79 meV. The maximum value of the magnetization at 10 K was about 100 emu/cc, and the ferromagnetism was also observed until 350 K from total magnetization as a function of temperature with applied magnetic field of 3,000 Oe.

• Applied Chemistry for Engineering
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• v.8 no.3
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• pp.365-373
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• 1997

Chitosan oligomer having aldehyde group at reducing end was prepared by oxidative-deamination reaction of chitosan by using sodium nitrite, and the resulting aldehyde group was redeced to 2,5-anhydro-D-mannitol group. The obtained chitosan oligomer showed an average degree of polymerization(DP) 2 by GPC analysis. It was highly soluble in lipophilic solvents. N,N-diacyl, O-acyl chitosan oligomer was obtained trom the reaction between chitosan oligomer and acyl chloride under 4-dimethoxyaminopyridine catalyst. From DSC measurement, N,N-dilauroyl, O-lauroyl chitosan oligomer showed mesophase region, which was confirmed by polarizing microscope as thermotropic liquid crystalline state. X-ray diffraction pattern revealed that N,N-dilauroyl, O-lauroyl chitosan oligomer was highly crystalline, whereas chitosan oligomer was not.

• Journal of the Korean Ceramic Society
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• v.22 no.3
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• pp.35-40
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• 1985

The composition of the base glass was determined to be $Na_2O$ 15, $Fe_2O_3$ 35, $B_2O_3$ 0~20, $P_2O_5$ 30~50 by mole percent. The heating temperature for nucleation was determined by means of thermal expansion curve. Crystalline phases were investigated by X-ray diffraction method and I.R Spectra. Electrical conductivities of glass spec-imens were observed in the temperature range 25~20$0^{\circ}C$ The activation energies of these specimens were caculated. The results obtained were as follows : 1) The limit composition of the melts 15mol% $Na_2O$ 35mole% $Fe_2O_5$ 20mole% $B_2O_3$ 30mole% $P_2O_5$ was able to be formed into desired shapes during cooling, . 2) In the measurement of d. c conductivity($\delta$) on the glasses in the system $15Na_2O-35Fe_2O_3$-$B_2O_3$-(50-x) $P_2O_5$ the values decreased by replacing 5 mole% $P_2O_5$ with $B_2O_3$ 3) The d. c conducties of heat treated samples were increased by replacing $P_2O_5$ with $B_2O_3$ 4) $B_2O_3$ contributed to precipitate crystals such as${\gamma}$-$Fe_2O_3$ $Fe_3O_4$ which had the advantage of electronic conduction in heat treated samples. 5) The slope plotted Log($\delta$) versus 1/T in this glass system was linear in the measured temperature range.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.11b
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• pp.163-166
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• 2001

The stochiometric mix of evaporating materials for the $ZnGa_{2}Se_{4}$ single crystal thin films was prepared from horizontal furnace. To obtain the single crystal thin films, $ZnGa_{2}Se_{4}$ mixed crystal was deposited on thoroughly etched semi-insulating GaAs(100) substrate by the Hot Wall Epitaxy (HWE) system. The source and substrate temperature were $610^{\circ}C$ and $450^{\circ}C$, respectively. The crystalline structure of single crystal thin films was investigated by the photoluminescence and double crystal X-ray diffraction (DCXD). The carrier density and mobility of $ZnGa_{2}Se_{4}$ single crystal trun films measured from Hall effect by van der Pauw method are $9.63{\times}10^{17}cm^{-3}$, $296cm^{2}/V{\cdot}s$ at 293 K, respectively. From the photocurrent spectrum by illumination of perpendicular light on the c axis of the $ZnGa_{2}Se_{4}$ single crystal thin film, we have found that the values of spin orbit splitting $\Delta$ So and the crystal field splitting $\Delta$Cr were 251.9 meV and 183.2 meV at 10 K, respectively. From the photoluminescence measurement on $ZnGa_{2}Se_{4}$ single crystal thin film, we observed free excition (Ex) existing only high quality crystal and neutral bound exiciton $(A^{0},X)$ having very strong peak intensity. Then, the full-width-at -half-maximum(FWHM) and binding energy of neutral acceptor bound excition were 11 meV and 24.4 meV, respectivity. By Haynes rule, an activation energy of impurity was 122 meV.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.11b
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• pp.167-170
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• 2001

The stochiometric mix of evaporating materials for the $CdGa_{2}Se_{4}$ single crystal thin films was prepared from horizontal furnace. To obtain the single crystal thin films, $CdGa_{2}Se_{4}$ mixed crystal was deposited on thoroughly etched semi-insulating GaAs(100) substrate by the Hot Wall Epitaxy (HWE) system. The source and substrate temperature were $630^{\circ}C$ and $420^{\circ}C$, respectively. The crystalline structure of single crystal thin films was investigated by the photoluminescence and double crystal X-ray diffraction (DCXD). The carrier density and mobility of $CdGa_{2}Se_{4}$ single crystal thin films measured from Hall effect by van der Pauw method are $8.27{\times}10^{17}cm^{-3},345cm^{2}/V{\cdot}s$ at 293 K, respectively. From the photocurrent spectrum by illumination of perpendicular light on the c-axis of the $CuInSe_{2}$ single crystal thin film, we have found that the values of spin orbit splitting $\Delta$ So and the crystal field splitting $\Delta$Cr were 106.5 meV and 418.9 meV at 10 K, respectively. From the photoluminescence measurement on $CdGa_{2}Se_{4}$ single crystal thin film, we observed free excition (Ex) existing only high Quality crystal and neutral bound exiciton $(D^{0},X)$ having very strong peak intensity. Then, the full-width-at-half-maximum(FWHM) and binding energy of neutral donor bound excition were 8 meV and 13.7 meV, respectivity. By Haynes rule, an activation energy of impurity was 137 meV.

• Korean Journal of Food Science and Technology
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• v.35 no.4
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• pp.545-550
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• 2003

The effect of ${\beta}-glucan$ on gelatinization of barley starch was studied. By the rapid visco-analyzer measurement, gelatinization of starch became rapid and viscosity increased largely on the RVA pattern by addition of ${\beta}-glucan$ to starch. The results of differential scanning calorimeter showed that molecular structure of starch was getting stabilized through shifting up of gelatinization temperature and increase in enthalpy by addition of ${\beta}$-glucan. X-ray diffraction pattern also showed the same results as differential scanning calorimeter. But it was revealed that addition of ${\beta}$-glucan to starch didn't affect characteristics such as microscopic observation, solubility, swelling power, and iodine binding properties during gelatinization of starch.

• Journal of the Korean Electrochemical Society
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• v.17 no.4
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• pp.209-215
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• 2014

We report on the electrocatalytic activities at Pt nanostructure surfaces electrodeposited with different deposition charges on indium tin oxide electrodes for oxygen reduction and methanol oxidation reactions. The surface properties of Pt nanostructures depending on deposition charges were characterized by scanning electron microscopy, electrochemical surface area measurement, X-ray diffraction, and CO stripping analysis, which were correlated to the electrocatalytic activities. Pt nanostructures with deposition charge of 0.03 C exhibited the highest electrocatalytic activity for oxygen reduction and methanol oxidation. The sharp sites of Pt nanostructure and the presence of highly active facet play a key role, whereas the electrochemical surface area does not significantly affect the electrocatalytic activity. The results obtained in this work with regard to the dependence of electrocatalytic activity on the variation of the Pt nanostructures will give insights into the development of advanced electrocatalytic systems.

• Resources Recycling
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• v.18 no.6
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• pp.18-23
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• 2009

An investigation on the synthesis of aluminum citrate, one of the aluminum organic compounds, has been performed using aluminum chloride solutions as a starting material. For the synthesis of aluminum citrate, citric acid was added to aluminum solutions with the mole ratio of citric acid to aluminum to be 2.5 and aluminum citrate synthesized was also characterized in terms of chemical analysis, X-ray diffraction, particle size measurement and SEM analysis. As a result, it was found that the ratio of ethanol/Al solution more than 4.0 was required for the synthesis of aluminum citrate from aluminum solutions. Furthermore, the pH should be controlled to be more than 7.0 in order to obtain the recovery of aluminum citrate higher than 97%. From the chemical analysis of aluminum citrate synthesized in this work, the content of $NH_4$, Al and C was found to be 17.0, 4.01 and 25.7%, respectively. Accordingly, the aluminum citrate synthesized from aluminum solutions was confirmed to be $(NH_4)_5Al(C_6H_4O_7)_2{\cdot}2H_2O$.