• Proceedings of the Korean Vacuum Society Conference
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• 2015.08a
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• pp.182.1-182.1
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• 2015

Transparent conducting oxides (TCOs)는 높은 투과율과 낮은 전기전도도를 갖고 있어 광다이오드, 태양전지 등 광소자에 적용하기 위해 많은 연구가 진행되어 왔다. 특히 Indium oxide 계열의 박막은 TCO 물질 중 하나로서 3.6 eV 의 wide bandgap을 가지고 있고, 높은 투과율과 낮은 전기 전도도 (< $10-3{\Omega}cm$)를 보여 다양한 응용이 가능해 오랫동안 연구 되어 지고 있다. 게다가 Indium oxide 계열의 박막은 낮은 가격과 화학적 안정성, 공정과정의 편의성 등 다양한 이점을 가지고 있어서 현재는 더 낮은 가격으로 생성해 더 높은 효율을 만드는데 관심이 집중되고 있다. 이러한 박막은 태양광 흡수층에서 생성되는 캐리어의 이동 및 외부 전극과의 접촉에서 발생하는 손실을 줄이기 위한 전극용 소재로 연구되어지고 있다. 본 연구에서는 Indium Molybdenum Oxide 박막을 Indium oxide와 Molybdenum 타겟을 이용하여 co-sputtering 방법으로 증착하였다. Indium molybdenum oxide 박막은 일정한 Mo 도핑농도와 일정한 Ar 개스 분압에서 다양한 기판온도 변화를 통해 증착하였다. 제작된 Indium molybdenum oxide 박막은 Hall Effect Measurement, Ultraviolet-Visible spectroscopy 및 X-Ray Diffraction (XRD) 등을 분석해 기판의 온도변화에 따른 전기비저항 및 광 투과도의 특성변화를 조사하였다.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.06a
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• pp.447-447
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• 2009

In this study, transparent and conductive Al-doped zinc oxide (AZO) films were prepared on Corning glass and silicon wafer substrate by RF magnetron sputtering method using an Al-doped ZnO target (Al: 2 wt.%) at room temperature as the thickness of 150 nm. We investigated the effects of the RF power between 100 Wand 350 W in steps of 50 W on structural, electrical and optical properties of AZO films. Also, we studied the effects of the working pressure (3, 4 and 5 mtorr) on that condition. The thickness and cross-sectional images of films were observed by field emission scanning electron microscopy (FE-SEM) and all of the films were kept to be constant to $150\pm10$ nm on Coming glass and silicon wafer. A grain size was calculated from X-ray diffraction (XRD) on using the Scherrer' equation and their electrical properties investigated hall effect electronic transport measurement system. Moreover, we measured transmittance of AZO films by UV/VIS spectrometer.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.06a
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• pp.201-202
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• 2009

ZnO:Al transparent conductive films for solar cells were deposited on the glass substrates at room temperature by facing target sputtering (FTS) method. The sputtering targets were 100 mm diameter disks of 2w.t..%. AZO and Zn metal. ZnO:Al thin films were deposited as a function film thickness. A base pressure was $2{\times}10^{-6}$torr, and a working pressure was 1mTorr. The properties of thin films on the structural, electrical and optical properties of the deposited films were investigated using a four-point probe (Chang-min), an X-ray diffraction (Rigaku), a Hall Effect measurement (Ecopia), an UV/VIS spectrometer (HP) and a $\alpha$-step (Tencor). The lowest resistivity of film was $5.67{\times}10^{-4}[{\Omega}-cm]$ at 500nm. The average transmittance of over 80% was seen in the visible range.

• Journal of the Korean Ceramic Society
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• v.44 no.2 s.297
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• pp.84-88
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• 2007

CdSe hollow spheres with the diameter of about 30-50 nm were synthesized after ultrasonic irradiation in the presence of $Cd(NO_3)_2,\;Na_2SeSO_3$, and polyvinylalcohol(PVA). The characteristics of CdSe hollow spheres were analyzed using X-ray diffraction(XRD), transmission electron microscopy(TEM), UV-vis measurement and PL spectrometer. The characteristics of solvent as water and water-1-propanol mixture in the system played important roles on the controlled synthesis of hollow sphere. Based on the observation of morphological difference of CdSe, the possible mechanism of CdSe hollow sphere formation will be discussed.

• Textile Coloration and Finishing
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• v.16 no.4
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• pp.1-9
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• 2004

In recent, development of nano fiber has been one of the most active subjects in the world. Nano fiber is defined as a ultra fine yarn with a diameter unit of $10-100\times10^{-9}meter$, which is possible to be produced by an electro-spinning technology. In this study, physical characteristics and dyeing properties of nylon 66 nano fiber were investigated. Nylon 66 nano fiber was dyed with levelling type acid dyes. X-ray diffraction method and DSC analysis were used for the measurement of the degree of crystallization. Analysis of amino end groups was also performed in order to examine a relationship between number of amino groups and its dyeing property as well as water absorption behavior. The maximum exhaustion % of dyes and dyeing rate under various dyeing conditions, such as dyeing temperature and pH in dye bath, along with build-up properties for 2 acid dyes were evaluated. It was found that the degree of crystallization of nano fiber was smaller than that of regular fiber, and amino end groups of nano fiber were less than regular fiber. Half dyeing time of nano fiber was shorter than regular fiber because of the bigger specific surface area. Effect of pH on exhaustion % was small in case of nano fiber. Exhaustion of nano fiber increased with higher concentration of dye.

• Journal of the Korean Society for Heat Treatment
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• v.7 no.4
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• pp.253-261
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• 1994

Transformation behavior and superelastic behavior of Ti-Ni-Cu alloys with various Cu content has been investigated by means of electrical resistivity measurement, X-ray diffraction, tensile test and transmission electron microscopy. Two types of heat treatment are given to the specimens: i) Solutions treatment. ii) thermo-mechanical treatment. The transformation sequence in solution treated Ti-Ni-Cu Alloys substituted by Cu for Ni up to 5at.% occurs to $B2{\rightleftarrows}B19^{\prime}$ and it proceeds in two stages by addition of 10at.%Cu, i. e, $B2{\rightleftarrows}B19{\rightleftarrows}B19^{\prime}$. Also, it has been found that Ti-30Ni-20Cu alloy transformed in one stage : $B2{\rightleftarrows}B19$. The thermo-mechanically treated Ti-47Ni-3Cu alloy transformed in two stages: B2${\rightleftarrows}$rhomboheral phase${\rightleftarrows}B19^{\prime}$, while transformation sequence in Ti-45Ni-5Cu and Ti-40Ni-10Cu alloy transformed as same as solution treated specimens. The critical stress for inducing slip deformation in solution treated and thermo-mechanically treated Ti-40Ni-10Cu alloy is about 90MPa and 320Mpa respectively.

• Proceedings of the Materials Research Society of Korea Conference
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• 2003.03a
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• pp.99-99
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• 2003

The growth of GaN on Si is of great interest due to the several advantages : low cost, large size and high-quality wafer availability as well as its matured technology. The crystal quality of GaN is known to be much influenced by the surface pretreatment of Si substrate[1]. In this work, the properties of GaN overlayer grown on ion beam modified Si(111) have been investigated. Si(111) surface was treated RIB with 1KeV-N$_2$$\^$+/(at 1.9 ${\times}$ 10$\^$-5/) to dose ranging from 5${\times}$10$\^$15/ to 1${\times}$10$\^$17/ prior to film growth. GaN epilayers were grown at 1100$^{\circ}C$ for 1 hour after growing AlN buffer layers for 5∼30 minutes at 1100$^{\circ}C$ in Metal Organic Chemical Vapor Deposition (MOCVD). The properties of GaN epilayers were evaluated by X-Ray Diffraction(XRD), Raman spectroscopy, Photoluminescence(PL) and Hall measurement. The results showed that the ion modified treatment markedly affected to the structural, optical and electrical characteristic of GaN layers.

• Proceedings of the Materials Research Society of Korea Conference
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• 2003.11a
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• pp.165-165
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• 2003

The growth of GaN on Si is of great interest due to the several advantages low cost, large size and high-quality wafer availability as well as its matured technology. The crystal quality of GaN is known to be much influenced by the surface pretreatment of Si substrate [1]. In this work, the properties of GaN overlayer grown on ion implanted Si(111)and bare Si(111) have been investigated. Si(111) surface was treated ion implantation with 60KeV and dose 1${\times}$10$\^$16//$\textrm{cm}^2$ prior to film growth. GaN epilayers were grown at 1100$^{\circ}C$ for 1 hour after growing AlN buffer layers for 15-30 minutes at 1100$^{\circ}C$ with metal organic chemical vapor deposition (MOCVD). The properties of GaN epilayers were evaluated by X-Ray Diffraction (XRD), Scanning electron microscope (SEM) Photoluminescence (PL) at room temperature and Hall measurement The results showed that the GaN on ion implanted Si(111) markedly affected to the structural, optical and electrical characteristic of GaN layers.

• Proceedings of the Korean Institute of IIIuminating and Electrical Installation Engineers Conference
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• 2009.10a
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• pp.411-414
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• 2009

Photo-capacitor electrodes are attracting great attention because of their high capacitance and potential applications in electronic devices. Carbon capacitor, active carbon capacitor and its combination will be fabricated using simple sandwich capacitor electrode method as carbonaceous material on each type of capacitor electrodes with 20 ${\times}$ 15 mm cell size. Carbon/active carbon cell was fabricated using sol-gel process with 120oC dry temperature in l hour and using sintering process with 500oC in 2 hour. The effect of sintering temperature on carbon properties was also investigated with X-ray diffraction technique to get the best sintering temperature. The detail of fabrication process will be explained. Elemental composition in electrode material can be measured using quantitative spectroscopic as and a cyclic voltammetric technique was used to study the combined effects of electrode material and effect of annealing temperature and also time on the capacitance of thermally treated in capacitor electrode. In this work, characterization impedance technique is used to measurement of capacitance and giving complementary results. Active carbon as carbonaceous material has a better capacitance in charge/discharge process with mean thickness $32{\mu}m$ and with particle size $1{\mu}m$ to $4.5{\mu}m$ in 20 ${\times}$ 15 mm sample size of capacitor electrode.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.25 no.2
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• pp.121-124
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• 2012

The characteristics of Ga-doped zinc oxide (GZO) thin films deposited at different deposition temperatures (TS~250 to $550^{\circ}C$) on 4H-SiC have been investigated. Structural and electrical properties of GZO thin film on n-type 4H-SiC(0001) were investigated by using x-ray diffraction(XRD), atomic force microscopy(AFM), Hall effect measurement, barrier height from I-V curve and Auger electron spectroscopy(AES). XRD $2\theta$ scan shows GZO thin film has preferential orientation with c-axis perpendicular to SiC substrate surface. The lowest resistivity ($\sim1.9{\times}10^{-4}{\Omega}cm$) was observed for the GZO thin film deposited at $400^{\circ}C$. As deposition temperature increases, barrier height between GZO and SiC was increased. Whereas, resistivity of GZO thin films as well as barrier height between GZO and SiC were increased after annealing process in air atmosphere. It has been found that the c-axis oriented crystalline quality as well as the relative amount of activated Ga3+ ions and oxygen vacancy may affect the electrical properties of GZO films on SiC.