• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2001년도 추계학술대회 논문집
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• pp.167-170
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• 2001

The stochiometric mix of evaporating materials for the CdGa$_2$Se$_4$ single crystal thin films was prepared from horizontal furnace. To obtain the single crystal thin films, CdGa$_2$Se$_4$ mixed crystal was deposited on thoroughly etched semi-insulating GaAs(100) substrate by the Hot Wall Epitaxy (HWE) system. The source and substrate temperature were 630$^{\circ}C$ and 420$^{\circ}C$, respectively. The crystalline structure of single crystal thin films was investigated by the photoluminescence and double crystal X-ray diffraction (DCXD). The carrier density and mobility of CdGa$_2$Se$_4$ single crystal thin films measured from Hall erect by van der Pauw method are 8.27x10$\^$17/ cm$\^$-3/, 345 $\textrm{cm}^2$/V$.$s at 293 K, respectively. From the Photocurrent spectrum by illumination of perpendicular light on the c-axis of the CuInSe$_2$ single crystal thin film, we have found that the values of spin orbit splitting ΔSo and the crystal field splitting ΔCr were 106.5 meV and 418.9 meV at 10 K, respectively. From the photoluminescence measurement on CdGa$_2$Se$_4$ single crystal thin film, we observed free excition (E$\_$X/) existing only high quality crystal and neutral bound exiciton (D$\^$0/,X) having very strong peak intensity. Then, the full-width-at-half-maximum(FWHM) and binding energy of neutral donor bound excision were 8 meV and 13.7 meV, respectivity. By Haynes rule, an activation energy of impurity was 137 meV,

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2001년도 추계학술대회 논문집
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• pp.163-166
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• 2001

The stochiometric mix of evaporating materials for the ZnGa$_2$Se$_4$ single crystal thin films was prepared from horizontal furnace. To obtain the single crystal thin films, ZnGa$_2$Se$_4$ mixed crystal was deposited on thoroughly etched semi-insulating GaAs(100) substrate by the Hot Wall Epitaxy (HWE) system. The source and substrate temperature were 61$0^{\circ}C$ and 45$0^{\circ}C$, respectively. The crystalline structure of single crystal thin films was investigated by the photoluminescence and double crystal X-ray diffraction (DCXD). The carrier density and mobility of ZnGa$_2$Se$_4$ single crystal thin films measured from Hall effect by van der Pauw method are 9.63x10$^{17}$ cm$^{-3}$ , 296 $\textrm{cm}^2$/V.s at 293 K, respectively, From the photocurrent spectrum by illumination of perpendicular light on the c-axis of the ZnGa$_2$Se$_4$ single crystal thin film, we have found that the values of spin orbit splitting $\Delta$So and the crystal field splitting $\Delta$Cr were 251.9 MeV and 183.2 meV at 10 K, respectively. From the photoluminescence measurement on ZnGa$_2$Se$_4$ single crystal thin film, we observed free excition (E$_{x}$) existing only high quality crystal and neutral bound excition (A$^{0}$ ,X) having very strong peak intensity. Then, the full-width-at-half-maximum(FWHM) and binding energy of neutral acceptor bound excition were 11 meV and 24.4 meV, respectivity. By Haynes rule, an activation energy of impurity was 122 meV.on energy of impurity was 122 meV.

• 청정기술
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• 제23권1호
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• pp.95-103
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• 2017

본 연구는 비 $TiO_2$ 계 광촉매 중 가장 널리 알려져 있는 $ATiO_3$ (A = Ca, Sr, Ba) perovskite를 sol-gel 법을 이용해 합성하였고, 골격치환이 용이한 점을 이용해 A site에 Ni을 첨가한 입자를 합성하였다. 합성한 $ATiO_3$와 Ni-$ATiO_3$ 입자의 불리화학적 특성은 X-선 회절분석(XRD), 자외선-가시선 분광광도계(UV-visible spectroscopy), 주사전자현미경 (SEM), 에너지분산형 분광분석법(EDS), 질소 등온 흡 탈착실험, X선 광전자분광법(XPS)을 이용해 확인하였다. 수소제조는 메탄올을 광분해하여 얻었으며, $ATiO_3$ 보다 Ni-$ATiO_3$ 촉매에서 높은 수소발생량을 나타내었다. 특히 Ni-$SrTiO_3$ 촉매를 사용하였을 때 24시간 반응 후 $273.84mmolg^{-1}$의 수소가 발생하였다. 또한 Ni-$SrTiO_3$ 촉매는 물(0.1 M KOH)을 분해하였을 때에도 높은 수소 제조 성능을 나타냈으며, 24시간 반응 후 $961.51mmolg^{-1}$의 수소가 발생한 것을 확인하였다.

• 한국진공학회지
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• 제5권4호
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• pp.333-340
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• 1996

Cu 확산방지막으로서의 Tin의 특성을 면저항 특정, X선 회절 분석, SEM, AES, capacitance-voltage(C-V) 측정에 의하여 평가하고, Cu의 확산을 민감하게 알아내는 정도를 특성 평가 방법간에 비교하였다. 여러 가지 증착방법에 의하여 Cu/TiN/Ti/SiO2/Si 구조의 다층 박막시편을 제작하였으며, 이 시편을 10% H2/90% Ar분위기, 열처리 온도 500~$800{\circ}C$ 범위에서 2시간 동안 열처리하였다. TiN의 Cu 확산방지 효과가 소멸된 경우 Cu 박막 표면에서 불규칙한 모양의 spot을 관찰할 수 있었으며 outdiffusion된 Si를 검출할 수 있었다. MOS capacitor의 C-V 특성은 열처리 온도에 따라 급격하게 변화하였다. C-V 측정에서 inversion capacitance는 열처리 온도 500~$700^{\circ}C$범위에서 열처리 온도가 높아질수록 감소하다가 $800^{\circ}C$에서 크게 증가하였으며, 이러한 특성의 변화는 TiN을 통해서 $SiO_2$와 Si내로 확산된 Cu에 의하여 발생되는 것으로 생각된다.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2004년도 하계학술대회 논문집 Vol.5 No.1
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• pp.74-77
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• 2004

[ $HfO_2$ ] dielectric layers were grown on the p-type Si(100) substrate by metalorganic molecular beam epitaxy(MOMBE). Hafnium $t-butoxide[Hf(O{\cdot}t-C_4H_9)_4]$ was used as a Hf precursor and Argon gas was used as a carrier gas. The thickness of the layers was measured by scanning electron microscopy (SEM) and high-resolution transmission electron measurement(HR-TEM). The properties of the $HfO_2$ layers were evaluated by X-ray diffraction(XRD), high frequency capacitance-voltage measurement(HF C-V), current-voltage measurement(I-V), and atomic force measurement(AFM). HF C-V measurements have shown that $HfO_2$ layer grown by MOMBE has a high dielectric constant(k=19-21). The properties of $HfO_2$ films are affected by various process variables such as substrate temperature, bubbler temperature, Ar, and $O_2$ gas flows. In this paper, we examined the relationship between the $O_2/Ar$ gas ratio and the electrical properties of $HfO_2$.

• 대한화학회지
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• 제39권7호
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• pp.508-512
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• 1995

$Eu_{1-x}Sr_xCoO_{3-y}$계에 대한 각 조성의 시료를 1150$^{\circ}C$ 대기압하에서 일정량의 반응혼합물을 가열하여 합성하였고 X-선 회절분석을 통하여 고용체가 합성되었음을 확인하였다. X-선 회절분석 결과 x=0.00과 0.25 조성의 화합물은 뒤틀린 orthoferrite형의 사방정계이고 x=0.50과 0.75는 단순 입방정계이고 x=1.00은 brownmillerite형의 사방정계이다. $Co^{4+}$ 이온의 양(${\tau}$값)은 x=0.50에서 최대가 되고 산소공위는 x값이 증가함에 따라 증가한다. 합성된 화합물에 대한$Co^{4+}$ 이온의 몰비와 산소 비화학량을 결정함으로서 합성된 각 조성의 화합물에 대한 비화학량론적 화학식을 결정하였다. 페롭스카이트 구조의 팔면체자리에 존재하는 $Co^{3+}$ 이온은 온도가 증가함에 따라 낮은 스핀상태에서 높은 스핀상태로의 전이가 일어난다. 이에 따라 자기측정 결과 각 시료는 온도가 상승함에 따라 유효자기모멘트가 증가한다. $EuCoO_{3.00}$의 경우 팔면체자리에 존재하는 $Co^{3+}$ 이온은 산소이온을 매개로 하여 이웃한 $Co^{3+}$ 이온과 반강자성 간접상호작용을 한다. ${\tau}$값이 증가하면 $Co^{3+}-O^2-Co^{4+}$의 강자성 상호작용에 의해 {\theta}_p$의 절대값이 감소하고, 결국 x=0.50에서는 양의 {\theta}_p$값을 갖는다.

• Transactions on Electrical and Electronic Materials
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• 제7권1호
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• pp.36-41
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• 2006

In this paper, the time evolution of undoped GaN epilayers on a low-temperature GaN buffer layer grown on c-plane sapphire at a low pressure of 300 Torr was studied via a two-step growth condition in a horizontal MOCVD reactor. As a function of the growth time at a high-temperature, the surface morphology, structural quality, and optical and electrical properties were investigated using atomic force microscopy, high-resolution x-ray diffraction, photoluminescence, and Hall effect measurement, respectively. The root-mean-square roughness showed a drastic decrease after a certain period of surface roughening probably due to the initial island growth. The surface morphology also showed the island coalescence and the subsequent suppression of three-dimensional island nucleation. The structural quality of the GaN epilayer was improved with increasing growth time considering the symmetrical (002) and asymmetrical (102) rocking curves. The variations of room-temperature photoluminescence, background carrier concentration, and Hall mobility were measured and discussed.

• 자원환경지질
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• 제22권2호
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• pp.129-139
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• 1989

The anthracite coalfields of Korea are confined to the areas where sedimentary rocks of Permian and Jurassic are preserved. The Chungnam coalfield lies in the sedimentary rocks of Jurassic which belongs to the Daedong Supergroup (the Nampo group). For the property analysis of each coal seam interbeded in Daedong Supergroup, Seongju area is chosen and twelve coalseams are taken. Many standard tests have been established for optical analysis (maceral analysis, coalification degree measurement), chemical analysis (proximate, ultimate analysis) and physical analysis (ignition temperature, ash fusion temperature, hardgrove grindability index and X-ray diffraction). The Jurassic anthracite mainly consist of vitrinite and macrinite and the range of the reflectance is $R_{max}$ 5.0-6.5 which means metaanthracite rank. By the chemical composition analysis, it shows low H/C and high O/C value compare with international average value. By the physical analysis, it has very high ignition temperature ($531-584^{\circ}C$) and ash fusion temperature ($1510-1700^{\circ}C$) and very low combustion velocity (0.2-1.9 mg/min). The very wide range of the hardgrove grindability index (46-132) means that the grindability controlled mainly by the structural conditions of coal bearing strata.

• 한국신재생에너지학회:학술대회논문집
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• 한국신재생에너지학회 2010년도 춘계학술대회 초록집
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• pp.163.2-163.2
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• 2010

In this work, nano-flake shaped nickel oxide (NiO) films were synthesized by chemical bath deposition technique for electrochemical capacitors. The deposition was carried out for 1 and 2 h at room temperature using nickel foam as the substrate and the current collector. The structure and morphology of prepared NiO film were characterized by X-ray diffraction (XRD) and scanning electron microscopy (SEM). And, electrochemical properties were characterized by cyclic voltammetry, galvanostatic charge-discharge, and AC impedence measurement. It was found that the NiO film was constructed by many interconnected NiO nano-flakes which arranged vertically to the substrate, forming a net-like structure with large pores. The open macropores may facilitate the electrolyte penetration and ion migration, resulted in the utilization of nickel oxide due to the increased surface area for electrochemical reactions. Furthermore, it was found that the deposition onto nickel foam as substrate and curent collector led to decrease of the ion transfer resistance so that its specific capacitance of a NiO film had high value than NiO nano flake powder.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2016년도 제50회 동계 정기학술대회 초록집
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• pp.169-169
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• 2016

In this paper, we report electrical, optical and structural properties of Al-doped zinc oxide (AZO) thin films deposited at different substrate temperatures and pressures. The films were prepared by radio frequency (RF) magnetron sputtering on glass substrates in argon (Ar) ambient. The X-ray diffraction analysis showed that the AZO films deposited at room temperature (RT) and 20 Pa were mostly oriented along a-axis with preferred orientation along (100) direction. There was an improvement in resistivity ($3.7{\times}10^{-3}{\Omega}-cm$) transmittance (95%) at constant substrate temperature (RT) and working pressure (20 Pa) using the Hall-effect measurement system and UV-vis spectroscopy, respectively. Our results have promising applications in low-cost transparent electronics, such as the thin-film solar cells and thin-film transistors due to favourable deposition conditions. Furthermore our film deposition method offers a procedure for preparing highly oriented (100) AZO films.