• Advances in environmental research
• /
• v.7 no.1
• /
• pp.53-71
• /
• 2018

Waste glass disposal causes environmental problems in the cities. To find a suitable green environmental solution for this problem low cost adsorbent in this study was prepared from waste glass. An effective new green adsorbent was synthesized by hydrothermal treatment of waste glass (WG), followed by acidic activation of its surface by HCl (WGP). The prepared adsorbent was characterized by scanning electron microscopy (SEM), X-ray fluorescence (XRF), X-ray diffraction (XRD), and BET surface measurement. The developed adsorbent was used for the removal of heavy metals (Cd, Cu, Fe, Pb and Zn) from well water. Batch experiments were conducted to test the ability of the prepared adsorbent for the removal of Cd, Cu, Fe, Pb and Zn from well water. The experiments of the heavy metals adsorption by adsorbent (WGP) were performed at different metal ion concentrations, solution pH, adsorbent dosage and contact time. The Langmuir and Freundlich adsorption isotherms and kinetic models were used to verify the adsorption performance. The results indicated high removal efficiencies (99-100%) for all the studied heavy metals at pH 7 at constant contact time of 2 h. The data obtained from adsorption isotherms of metal ions at different time fitted well to linear form of the Langmuir sorption equation, and pseudo-second-order kinetic model. Application of the resulted conditions on well water demonstrated that the modified waste glass adsorbent successfully adsorbed heavy metals (Cd, Cu, Fe, Pb and Zn) from well water.

• Proceedings of the Korean Vacuum Society Conference
• /
• 2011.02a
• /
• pp.390-390
• /
• 2011

급속한 산업의 발달은 심각한 환경오염 및 에너지 문제를 가져왔다. 이를 해결하기 위하여 무한한 에너지원인 태양에너지를 원천으로 하는 친환경 정화소재로서의 광촉매(photocatalyst)를 통하여 인류의 에너지를 확보하는 것에 대한 관심이 급격하게 증가하고 있는 추세이다. 현재 광촉매로 가장 많이 사용되는 $TiO_2$의 경우 뛰어난 광활성에도 불구하고, 상대적으로 넓은 밴드갭(band gap) 으로 인한 가시광 응답성의 부재로 이를 해결하기 위한 많은 연구가 진행되고 있다. 따라서 본 연구에서는 PIII&D (plasma immersion ion implantation & deposition) 장비를 통하여 -60 kV의 펄스 고전압을 인가해 $TiO_2$에 좁은 band gap을 갖는 반도체를 이온주입하여 가시광 응답성을 갖는 양자점 감응(Quantum dot sensitized)형 광촉매를 제작하였다. 이온주입 후 시료의 chemical state와 crystallinity를 확인하기 위하여 X-ray photoelectron spectroscopy와 X-ray diffraction measurement를 이용하여 분석을 수행하였으며, 이러한 공정을 통해 제작된 양자점 감응형 광촉매의 가시광 응답성을 확인하기 위하여 UV/Vis 스펙트럼을 측정하였다. 또한 광촉매의 효율을 확인하기 위해 물 분해 장치(water splitting device) 를 제작하여 수소와 산소를 생성하였다.

• Bulletin of the Korean Chemical Society
• /
• v.32 no.3
• /
• pp.815-820
• /
• 2011

Three kinds of organometallic compounds (chromium acetylacetonate, magnesium acetate and vanadyl acetylacetonate) were used as transition metal precursor, titanium n-butoxide and multi-walled carbon nanotube as titanium and carbon precursor to prepare metal oxide-CNT/$TiO^2$ composites. The surface properties and morphology of metal oxide-CNT/$TiO^2$ composites were by Brauer-Emett-Teller (BET) surface area measurement, scanning electron microscopy (SEM), transmission electron microscopy (TEM), X-ray diffraction (XRD) and energy dispersive X-ray (EDX) analysis. The photocatalytic activity of prepared metal oxide-CNT/$TiO^2$ composites was determined by the degradation effect of methylene blue in an aqueous solution under irradiation of visible light.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2003.05c
• /
• pp.200-203
• /
• 2003

Ferroelectric europium-substitution $Bi_4Ti_3O_{12}$ thin films were fabricated by spin-coating onto a Pt/Ti/$SiO_2$/Si substrate. The $Bi_{3.25}Eu_{0.75}Ti_3O_{12}$ (BET) films have polycrystalline structure annealed at 700 C. We investigated that the influence of $Bi_4Ti_3O_{12}$ thin films by substituting for Bi ions with Bi ions using X-ray diffraction (XRD), scanning electron microscopy (SEM), and X-ray photoelectron spectroscopy (XPS). From the XPS measurement, it was suggested that the stability of the metal-oxygen octahedral should be related to substitute for Bi ions with Eu ions at annealed $800^{\circ}C$. The BET thin films showed a large remanent polarization (2Pr) of $60.99C/cm^2$ at an applied voltage of 10 V. The BET thin films exhibited no significant degradation of switching charge at least up to $5{\times}10^9$ switching cycles at a frequency of 50 kHz.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2003.11a
• /
• pp.15-18
• /
• 2003

Ta-Ti metal alloy is proposed for alternate gate electrode of ULSI MOS device. Ta-Ti alloy was deposited directly on $SiO_2$ by a co-sputtering method and good interface property was obtained. The sputtering power of each metal target was 100W. Thermal and chemical stability of the electrode was studied by annealing at $500^{\circ}C$ and $600^{\circ}C$ in Ar ambient. X-ray diffraction was measured to study interface reaction and EDX(energy dispersive X-ray) measurement was performed to investigate composition of Ta and Ti element. Electrical properties were evaluated on MOS capacitor, which indicated that the work function of Ta-Ti metal alloy was ${\sim}4.1eV$ compatible with NMOS devices. The measured sheet resistance of alloy was lower than that of poly silicon.

• Proceedings of the Korean Vacuum Society Conference
• /
• 2010.02a
• /
• pp.195-195
• /
• 2010

$Ga_2O_3$ thin films have been grown on Si(001) substrates by metalorganic chemical vapor deposition (MOCVD) using dimethylgallium isopropoxide ($Me_2GaO^iPr$, DMGIP) with oxygen as the reactant gas. Suitability of the precursor for CVD was confirmed by thermogravimetric analysis (TGA) and vapor pressure measurement. Deposition was carried out in the substrate temperature range $450-650^{\circ}C$. Spectroscopic ellipsometry, X-ray diffraction (XRD), and X-ray photoelectron spectroscopy (XPS) and Rutherford back-scattering spectroscopy (RBS) were used to determine the thickness, crystallinity, and composition and stoichiometry of the films, respectively. From the slope of the Arrhenius plot in the temperature range $500-550^{\circ}C$, the activation energy of deposition was found to be $225.5\;kJ\;mol^{-1}$. As-deposited films were amorphous, but the monoclinic $\beta-Ga_2O_3$ phase was revealed after annealing the films in air at $1050^{\circ}C$. The XPS and RBS analyses indicate that the $Ga_2O_3$ films obtained by using DMGIP were found to be almost stoichiometric.

• Proceedings of the Korean Vacuum Society Conference
• /
• 2013.08a
• /
• pp.223.2-223.2
• /
• 2013

비정질 실리콘은 태양전지, 트랜지스터, 이미지 센서 등 다양한 분야에서 응용되고 있으며 새로운 박막 소자 개발을 위한 소재로서 많은 연구가 진행되고 있다. 하지만 소자개발에 있어 공정상에서 발생하는 비정질 실리콘 박막의 높은 응력(stress)은 소자의 특성을 떨어뜨리는 문제점을 갖는다. 따라서 우수한 특성의 소자 개발을 위해서는 보다 낮은 응력을 갖는 비정질 실리콘 박막 증착 및 공정 조건에 따른 응력 조절이 필요하다. 저응력의 비정질 실리콘 박막 증착은 보다 낮은 반응온도에서 증착속도를 최소로 하여 성장되어야 하는데 이는 플라즈마기상증착(Plasma enhanced chemical vapor deposition, PECVD) 시스템에 의해 가능하다. 따라서 본 연구에서는 PECVD 시스템을 사용하여 비정질 실리콘 박막을 증착하였고 그 특성을 분석하였다. 이 때 증착 온도, rf 파워, 공정 압력은 실험결과로부터 얻어진 낮은 박막 증착속도 하에서 안정적으로 증착이 가능한 조건으로 일정하게 유지하여 실험하였다. 공정 가스는 SiH4/He/N2의 혼합가스를 사용하였고 응력 조절을 위해 SiH4/He 가스비를 일정한 비율로 변화하여 비정질 실리콘 박막을 증착하였다. 증착된 박막의 두께 및 표면 특성은 field emission scanning electron microscopy 및 atomic force microscopy를 이용하여 분석하였고, energy dispersive X-ray 분석을 통하여 정량 및 정성적 분석을 수행하였다. 그리고 stress measurement system을 이용하여 박막의 응력을 측정하였고 X-ray diffraction 측정 및 ellipsometry 측정으로부터 증착된 박막의 결정성, 굴절률 및 oiptical bandgap을 분석하였다.

• Bulletin of the Korean Chemical Society
• /
• v.21 no.7
• /
• pp.679-684
• /
• 2000

The Sr2Co0.5Nb(Ta)0.5O4 and Sr3CoNb(Ta)O7 compounds, both with Ruddlesden-Popper structures, have been synthesized by the ceramic method at $1150^{\circ}C$ under atmospheric pressure. The crystallographic structure of the compounds was assigned to the tetr agonal system with space group 14/mmm by X-ray diffraction(XRD) Rietveld refinement. The reduced lattice volume and lattice parameters increased as the Ta with 5d substitutes for the Nb with 4d in the compounds. The Co/Nb(Ta)O bond length has been determined by X-ray absorption spectroscopic(EXAFS/XANES) analysis and the XRD refinement. The CoO6,octahedra were tetragonally distorted by elongation of Co-O bond along the c-axis. The magnetic measurement shows the compounds Sr2Co0.5Nb(Ta)0.5O4 and Sr3CoNb(Ta)O7 have paramagnetic properties and the Co ions with intermediate spin sates between high and low spins in D4h symmetry. All the compounds showed semiconducting behavior whose electrical conductivity increased with temperature up to 1000 K. The electrical conductiviy increased and the activation energy for the conduction decreased as the number of perovskite layers increased in the compounds with chemical formula An+1BnO3n+1.

• Corrosion Science and Technology
• /
• v.22 no.1
• /
• pp.1-9
• /
• 2023

This work studied the inhibitory effect of the combination of benzoate-intercalated hydrotalcite (HT-BZ) and Ce³⁺-loaded clay (Clay-Ce) on carbon steel (CS). HT-BZ was prepared by the co-precipitation method and Clay-Ce was fabricated by a cation exchange reaction. HT-BZ and Clay-Ce were assessed by scanning electron microscopy (SEM) and X-ray diffraction (XRD) coupled with zeta potential measurement. Electrochemical measurements coupled with scanning electron microscopy/energy-dispersive X-ray spectroscopy (SEM/EDX) were used for studying the inhibitory action of the mixture of HT-BZ and Clay-Ce on steel electrodes immersed in 0.1 M NaCl. For comparison, the inhibitory effect of HT-BZ or Clay-Ce alone was also evaluated. The results showed that HT-BZ combined with Clay-Ce provided synergistic inhibition of the CS substrate. The mixture of 0.5 g/L HT-BZ + 0.5 g/L Clay-Ce provided 93.5% inhibition efficiency. The protective mechanism of the HT-BZ + Clay-Ce mixture consisted of the reaction of released BZ and Ce³⁺ and the deposition of HT-BZ and Clay-Ce structures on the CS substrate.

• Korean Journal of Materials Research
• /
• v.33 no.6
• /
• pp.229-235
• /
• 2023

An all-perovskite oxide heterostructure composed of SrSnO₃/Nb-doped SrTiO₃ was fabricated using the pulsed laser deposition method. In-plane and out-of-plane structural characterization of the fabricated films were analyzed by x-ray diffraction with θ-2θ scans and φ scans. X-ray photoelectron spectroscopy measurement was performed to check the film's composition. The electrical transport characteristic of the heterostructure was determined by applying a pulsed dc bias across the interface. Unusual transport properties of the interface between the SrSnO₃ and Nb-doped SrTiO₃ were investigated at temperatures from 100 to 300 K. A diodelike rectifying behavior was observed in the temperature-dependent current-voltage (IV) measurements. The forward current showed the typical IV characteristics of p-n junctions or Schottky diodes, and were perfectly fitted using the thermionic emission model. Two regions with different transport mechanism were detected, and the boundary curve was expressed by ln I = -1.28V - 13. Under reverse bias, however, the temperature- dependent IV curves revealed an unusual increase in the reverse-bias current with decreasing temperature, indicating tunneling effects at the interface. The Poole-Frenkel emission was used to explain this electrical transport mechanism under the reverse voltages.