• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2000.11a
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• pp.221-224
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• 2000

The microwave dielectric properties of Ba(Mg$_{1}$3/Ta$_{2}$3/)O$_3$-xBa(Co$_{1}$3/Nb$_{2}$3/)O$_3$[BMT-BCN] ceramics were investigated. The specimens were prepared by the conventional mixed oxide method. It was found that Ba(Mg$_{1}$3/Ta$_{2}$3/)O$_3$ and Ba(Co$_{1}$3/Nb$_{2}$3/)O$_3$ formed a solid solution with complex perovskite structure. Increasing the BCN content, dielectric constant was increased, but temperature coefficient of resonant frequency was decreased. In the range of x$\geq$0.4, dielectric constant was about 30. 0.55BMT-0.45BCN ceramics showed excellent microwave dielectric properties with $\varepsilon$$_{r}$=30.84, Q$\times$f$_{0}$=75,325[GHz] and $\tau$$_{f}$=-2.9015[ppm/$^{\circ}C$].X>].

• The Journal of Korea Institute of Information, Electronics, and Communication Technology
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• v.9 no.4
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• pp.359-365
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• 2016

In this paper, a novel coupled C type resonator is proposed for improvement of phase noise characteristics that is weak point of oscillator using planar type microstrip line resonator. Oscillator using proposed coupled C type resonator is designed, it has improved phase noise characteristics. At the fundamental frequency of 9.8GHz, 2.4dBm output power and -82.7 dBc@100kHz phase noise have been measured for oscillator with coupled C type resonator. The phase noise characteristics of oscillator is improved about 9.7dB compared to one using the general ${\lambda}/4$ microstrip resonator. Due to its simple fabrication process and planar type, it is expected that the technique in this paper can be widely used for low phase noise oscillators for both MIC and MMIC applications.

• The Journal of Korea Institute of Information, Electronics, and Communication Technology
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• v.9 no.6
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• pp.539-545
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• 2016

In this paper, a novel coupled C type resonator is proposed for improvement of phase noise characteristics that is weak point of oscillator using planar type microstrip line resonator. Oscillator using proposed shorted coupled C type resonator is designed, it has improved phase noise characteristics. At the fundamental frequency of 9.8GHz, 4.87dBm output power and -84.7 dBc@100kHz phase noise have been measured for oscillator with shorted coupled C type resonator. Next, we designed voltage controlled oscillator using proposed shorted coupled C type resonator with varactor diode. The VCO has 33.8MHz tuning range from 9.7807GHz to 9.8145GHz, and phase noise characteristic is -115~-112.5dBc/Hz@100KHz. Due to its simple fabrication process and planar type, it is expected that the technique in this paper can be widely used for low phase noise oscillators for both MIC and MMIC applications.

• Aerospace Engineering and Technology
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• v.11 no.2
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• pp.164-170
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• 2012

This paper presents that the comparison results of AT (Active Transponder) positions obtained from different measurements: the result of GPS device and evaluated position from the SAR (Synthetic Aperture Radar) image, and active transponders can be useful as GCPs(Ground Control Points) in SAR images. The X-band AT are installed on the wide-and-flat area to improve SCR(signal-to-clutter ration), and activated to represent impulse response function in order to operate as one point target in SAR images. Cosmo-SkyMed operating at X-band frequency are used to provide SAR images of AT. The comparison of AT position is performed by using the result of GPS device field measurement and AT SAR images. ENVI-SARscape S/W is used to evaluate AT position in the SAR images. From the comparison, it is shown that AT are useful as GCPs for SAR images.

• Journal of Electrical Engineering and Technology
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• v.9 no.5
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• pp.1654-1659
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• 2014

Tunneling field-effect transistors (TFETs) are very applicable to low standby-power application by their virtues of low off-current ($I_{off}$) and small subthreshold swing (S). However, low on-current ($I_{on}$) of silicon-based TFETs has been pointed out as a drawback. To improve $I_{on}$ of TFET, a gate-all-around (GAA) TFET based on III-V compound semiconductor with InAs/InGaAs/InP multiple-heterojunction structure is proposed and investigated. Its performances have been evaluated with the gallium (Ga) composition (x) for $In_{1-x}Ga_xAs$ in the channel region. According to the simulation results for $I_{on}$, $I_{off}$, S, and on/off current ratio ($I_{on}/I_{off}$), the device adopting $In_{0.53}Ga_{0.47}As$ channel showed the optimum direct-current (DC) performance, as a result of controlling the Ga fraction. By introducing an n-type InGaAs thin layer near the source end, improved DC characteristics and radio-frequency (RF) performances were obtained due to boosted band-to-band (BTB) tunneling efficiency.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.18 no.10
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• pp.1107-1116
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• 2007

In this paper, a broadband open stubs band pass filters which can suppress the second harmonics using Z-transform technique, is designed, fabricated and characterized. The proposed broadband filters integrate the band stop filter with the FSCS structure and ${\lambda}_g/4$ open stub in order to suppress the second harmonics. Due to insertion of BSF at input and output terminal, the size of the filter was increased in the conventional filter, however, in the proposed structure, the position of inverter that connects the stubs can be integrated between those stubs, thereby decreasing the size. So, it can be fabricated in the size of $18.7{\times}16.9mm^2$ which is smaller size than conventional one. The measured results of the proposed filters have center frequency of a 5.8 GHz with bandwidth of 95 %, insertion loss of 0.6 dB, return loss of 14 dB. The simulation results are consistent with measurement results. The filter is designed far X-band satellite communication and ITS applications.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.21 no.9
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• pp.921-932
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• 2010

This paper presents a dual-band array antenna based on a modified Sierpinski fractal structure. Array structure is mirror symmetric, and forms broadside radiation pattern for dual frequency band if the ports are fed with $180^{\circ}C$ phase difference between upper and lower $2{\times}1$ array. To use in-phase corporate feeding circuit, the phase inversion structure is designed by changing the position of patch and ground for upper and lower array. The dimensions of the array antenna is $28{\times}30{\times}5\;cm^3$ and the bandwidth of 855~1,380 MHz(47 %), 1,770~2,330 MHz(27 %) were achieved for -10 dB return loss. The measured gain is 9.06~12.44 dBi for the first band and 11.76~14.84 dBi for the second band. The half power beam width is $57^{\circ}$ for x-z plane and $46^{\circ}$ for y-z plane at 1,100 MHz and $43^{\circ}$ and $28^{\circ}$ at 2,050 MHz, respectively.

• International Journal of Highway Engineering
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• v.15 no.6
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• pp.41-47
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• 2013

PURPOSES : The purpose of this study is about noise which is generated from roads and is consist of irregular frequency variation from low frequency to various band. The existing methods of noise reduction are sound barrier that uses insulation material and absorbing material or have applied passive technology of noise reduction by devices. The total frequency band is needed to apply active noise control. METHODS : In this study applies to the field of road traffic environment, signal processing controller and various analog signal input/output, the amplifier module is based on parallel-core embedded processor designed. DSP performs the control algorithm of the road traffic noise. Noise sources in the open space performance of evaluation were applied. In this study, controller of active signal processor was designed based on the module of audio input/output and main controller of embedded process. The controller of active signal processor operates noise reduction algorithm and performance tests of noise reduction in inside and outside environment were executed. RESULTS : The signal processing controller with OMAP-L137 parallel-core processors as the center, DSP processors in the active control operations dealt with quickly. To maximize the operation speed of an object and ARM processor is external function keys and display for functions and evaluating the performance management system was designed for the purpose of the interface. Therefore the reduction of road traffic noise has established an electronic controller-based noise reduction. CONCLUSIONS : It is shown that noise reduction is effective in the case of pour tonal sound and complex tonal sound below 500Hz by appling to Fx-LMS.

• Journal of the Institute of Electronics and Information Engineers
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• v.52 no.10
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• pp.97-107
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• 2015

The initial X-ray images obtained from a digital X-ray machine have a wide data range and uneven brightness level than normal images. In particular, in Chest X-ray images, it is necessary to improve naturally all of the parts such as ribs, spine, tissue, etc. These X-ray images can not be improved enough from conventional image quality enhancement algorithms because their characteristics are different from ordinary images'. This paper proposes to eliminate unnecessary background from an input image and expand the histogram range of the image. Then, we adjust the weight per frequency band of the image for improvement of contrast and sharpness. Finally, jointly taking the advantages of global contrast enhancement and local contrast enhancement methods we obtain an improved X-ray image suitable for effective diagnosis in comparison with the existing methods. Experimental results show quantitatively that the proposed algorithm provides better X-ray images in terms of the discrete entropy and saturation than the previous works.

• Bulletin of the Korean Chemical Society
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• v.32 no.9
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• pp.3395-3399
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• 2011

Copper oxide thin films were synthesized by reactive radio frequency magnetron sputtering at different oxygen gas ratios. The chemical and physical properties of the thin films were investigated by X-ray photoelectron spectroscopy (XPS), scanning electron microscopy (SEM), atomic force microscopy (AFM), and X-ray diffraction (XRD). XPS results revealed that the dominant oxidation states of Cu were $Cu^0$ and $Cu^+$ at 0% oxygen ratio. When the oxygen ratios increased above 5%, Cu was oxidized as CuO as detected by X-ray induced Auger electron spectroscopy and the $Cu(OH)_2$ phase was confirmed independent of the oxygen ratio. The valence band maxima were $1.19{\pm}0.09$ eV and an increase in the density of states was confirmed after formation of CuO. The thickness and roughness of copper oxide thin films decreased with increasing oxygen ratio. The crystallinity of the copper oxide films changed from cubic Cu through cubic $Cu_2O$ to monoclinic CuO with mean crystallite sizes of 8.8 nm (Cu) and 16.9 nm (CuO) at the 10% oxygen ratio level.