• Title/Summary/Keyword: X-선 구조분석

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Synthesis and Characterization of $In_2O_3$ Nanowires in a Wet Oxidizing Environment (습식 산화 분위기에서의 산화 인듐 나노선의 합성 및 구조적 특성)

  • Jeong, Jong-Seok;Kim, Young-Heon;Lee, Jeong-Yong
    • Applied Microscopy
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    • v.33 no.1
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    • pp.17-23
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    • 2003
  • Indium oxide ($In_2O_3$) nanowires were successfully synthesized by a simple reaction in a wet oxidizing environment at low temperature without metal catalyst. The nanowires were characterized by an x-ray diffraction (XRD), a scanning electron microscopy (SEM) equipped with an energy dispersive spectrometry (EDS), and a transmission electron microscopy (TEM). It was shown that the $In_2O_3$ nanowires were two types of morphology, uniform nanowires and nanowires containing $In_2O_3$ nanoparticles in its stem. It was found that lengths of the nanowires were ranges of several micrometers and their diameters were around $10{\sim}250$ nm. The growth direction of the nanowires was investigated and their growth mechanism is also discussed.

A Study on the Microstrucutre Changes by carbonation in NPP Concrete (원전콘크리트의 탄산화에 의한 미세구조 변화에 관한 연구)

  • Lee, Jang-Hwa;Kim, Do-Gyeum;Kim, Ki-Beom;Lee, Ho-Jae
    • Proceedings of the Computational Structural Engineering Institute Conference
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    • 2011.04a
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    • pp.400-403
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    • 2011
  • 본 논문에서는 시차열중량분석법과 X-선 회절분석법을 이용한 원전콘크리트의 탄산화에 의한 열화도 평가를 진행하였으며 두 가지 정성적 분석방법을 이용한 반정량적 평가 방법을 개발하였다. 원자력발전소 건설에 사용된 동일한 콘크리트 배합을 사용한 시편을 촉진 탄산화 시험장치에 28, 56, 91, 180, 365일 기간에 걸쳐 노출시켜 탄산화를 진행하였으며 노출된 시편은 시차열중량분석법, X-선 회절분석법을 이용하여 탄산화에 따라 발생된 열화생성물의 양을 정성적으로 분석하였다. 그 결과, 탄산화로 인해 발생되는 Calcite의 양이 노출기간에 따라 점차적으로 증가되는 것이 확인되었으며, Calcite의 생성을 위해 이산화탄소와 반응하는 Portlandite의 양이 점차적으로 감소되는 것이 확인되었다. 본 논문에서는 위의 언급된 두 방법의 관계성을 통해 열화도 평가를 진행하였다.

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X-ray diffraction analysis of ZnS/ZnSe superlattices prepared by hot wall epitaxy (열벽적층성장에 의하여 제작된 ZnS/ZnSe 초격자의 X-선 회절분석)

  • Yong Dae Choi;A. Ishida;Fujiyasu, H.
    • Journal of the Korean Crystal Growth and Crystal Technology
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    • v.6 no.3
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    • pp.377-385
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    • 1996
  • ZnS/ZnSe superlattices were prepared on GaAs (100) substrates by hot wall epitaxy, an the structures were analyzed using x-ray diffraction. It is shown that the x-ray diffraction of the strained superlattice gives very useful information about the thickness of each layer, strain, interdiffusion, and the fluctuation of the superlattice period. Interdiffusion length of the S and Se is estimated to be less than $2\;{\AA}$.

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Energy Distribution of X-rays from Medical Linear Accelerator (의료용 선형 가속기에서 발생된 X-선의 에너지 분포에 대한 고찰)

  • 김진기;김정홍;김부길
    • Progress in Medical Physics
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    • v.2 no.1
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    • pp.29-35
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    • 1991
  • For accureate treatment planning, new models of dose calculations are being developed which require the knowledge of the energy spectra and angular distributions of the X-rays incident on the surface of the material. In this present study, we applied the Monte Carlo methods to the systematic analysis of the spectra distribution of X-ray beams produced by medical linear accelerator. As expected, the spectra become softer as the distance is farther from the central axis. also, its influenced by the geometrical dffect of head system.

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The electron density distribution and the structure of semiconductor HgCdTe (반도체 HgCdTe의 전자 밀도 분포와 결정 구조)

  • Kook-Sang Park;Ky-Am Lee
    • Journal of the Korean Crystal Growth and Crystal Technology
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    • v.4 no.4
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    • pp.388-394
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    • 1994
  • A Hg(0.79)Cd(0.21)Te single crystal has been grown by the Traveling Heater Method(THM). Its zinc blend cubic structure is identified from the X-ray diffraction patterns and its lattice constant is determined to be $6.464 {\AA}$ using the least-square method of Cohen. From the values of the lattice constant, the composition x is determined to be 0.21. The electron density is calculated from the relative intensities of the scattered X-ray and compared with the theoretically calculated values. From the electron density distribution, it is shown that the crystal binding of Hg(1-x)Cd(x)Te(MCT) is mainly covalent and has tetrahedron bonds between adjacent atoms.

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A Study of Mineral Quantification on Clay-Rich Rocks (점토질 암석의 광물정량 분석법 연구)

  • Byeong-Kook, Son;Gi-O, An
    • Korean Journal of Mineralogy and Petrology
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    • v.35 no.4
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    • pp.431-445
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    • 2022
  • A quantitative phase analysis method of X-ray powder diffraction was studied to determine the mineral content of clay-rich rocks practically as well as effectively. For quantitative X-ray powder diffraction analysis of the clay-rich rocks, it is necessary to prepare whole-rock powder samples with a random orientation by side mounting method. In addition, for the identification of the clay minerals in the rock, it is required to prepare an oriented mount specimen with a clay particle size of 2 ㎛ or less, ethylene glycol treatment, and heat treatment. RIR (reference intensity ratio) and Rietveld method were used for the quantitative analysis of the clay-rich rocks. It was possible to obtain the total clay and the non-clay minerals contents from the whole-rock X-ray diffraction profiles using the RIR values. In addition, it was possible to calculate the relative content of each clay mineral from the oriented X-ray diffraction profiles of the clay particle size and assign it to the total clay. In the Rietveld method of whole-rock X-ray diffraction, effective quantitative values were obtained from the Rietveld diffraction patterns excluded the region of less than 10 degrees (2θ). Similar quantitative values were shown in not only the RIR but the Rietveld methods. Therefore, the analysis results indicate a possibility of a routine quantitative analysis of clay-rich rocks in the laboratory. However, quantitative analysis of clay minerals is still a challenge because there are numerous varieties of clay minerals with different chemical and structural characteristics.

XPD Analysis on the Cleaved GaAs(110) Surface (절개된 GaAs(110) 면의 XPD 분석)

  • Lee, Deok-Hyeong;Jeong, Jae-Gwan;O, Se-Jeong
    • Journal of the Korean Vacuum Society
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    • v.2 no.2
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    • pp.171-180
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    • 1993
  • X-ray photoelectron diffraction (XPD) is used to characterize the crystallographically cleaved GaAs(110) surface. By using polar and azimuthal scans of the usual angle-resolved x-ray photoelectron spectroscopy, we get the reconstruction geometry of the clean GaAs(110) surface from the intensity ratio of Ga 3d core-level peaks. The reconstruction parameters are determined by fitting the diffraction pattern with the single scattering cluster (SSC) model, and the results show similar tendencies to those obtained by other techniques.

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Study on the Characteristics of the AlAS/GaAs Epitaxial Layers Grown by Molecular Beam Epitaxy (분자선에피택시성장법으로 성장한 AlAS/GaAs 에피택셜층의 특성)

  • No, Dong-Wan;Kim, Gyeong-Ok;Lee, Hae-Gwon
    • Korean Journal of Materials Research
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    • v.7 no.12
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    • pp.1041-1046
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    • 1997
  • 본 연구에서는 분자선 에피택시 방법으로 비대칭 AIAs/GaAs(001)이중 장벽, 삼중장벽구조를 성장한 수 이를 이용하여 2단자 소자를 제작하여 전기적 특성을 분석하였다. 에피층은 쌍결정 X-ray회절 분석과 단면투과 전자현미경을 이용하여 결정성 및 격자 정합성을 확인하였다. 전기적 성능을 보다 향상시키기 위해 n-GaAs에 대한 오믹 접촉등의 소자 제작 공정을 최적화하였다. 삼중장벽 구조를 이용하여 제작한 소자의 전기적 특성 연구 결과 두개의 주요 공진 터널링 전류 피크 사이에 X-valley에 의한 구조를 확인할 수 있었으며, 이중 장벽구조에 제2의 양자우물 구조를 첨가함으로써 낮은 전압위치에서 전류 피크가 향상하는 결과를 얻었다.

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