• 한국항행학회논문지
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• 제22권5호
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• pp.449-455
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• 2018

본 논문에서는 소형화를 위해 방사패치에 절반으로 절단된 X-슬롯을 가지며, WLAN 이중대역인 2.4 GHz 대역 (2.4 ~ 2.484 GHz) 및 5 GHz 대역 (5.15 ~ 5.825 GHz)용 마이크로스트립 급전 모노폴 안테나를 제안하였다. 여러 파라미터들의 수치들을 최적화하여 주파수 특성을 만족하였으며, 5 GHz 대역의 반사손실 개선을 위해 DGS (defected ground structure)를 사용하였다. 제안된 안테나는 크기가 $24{\times}41mm^2$, 두께는 1.6 mm, 유전상수가 4.3인 FR-4 기판에 설계 및 제작 되었다. 제안된 안테나의 제작 및 측정 결과, 임피던스 대역폭(${\mid}S_{11}{\mid}{\leq}-10dB$)이 2.4 GHz 대역에서는 약 450 MHz (2.27 ~ 2.72 GHz), 5 GHz 대역에서는 약 1340 MHz (4.79 ~ 6.13 GHz)인 대역폭을 얻어 제안한 두 대역의 IEEE 규격(IEEE 802. 11n)을 충분히 만족하는 안테나를 구현했다. 특히 두 대역에서 안정되고 비교적 좋은 무지향성 경향의 방사패턴을 얻을 수 있었으며, 각 대역에서의 안테나 이득은 각각 1.31, 1.98 dBi 임을 확인할 수 있었다.

• Journal of Astronomy and Space Sciences
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• 제28권4호
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• pp.299-304
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• 2011

As more satellites are designed to downlink their observed image data through the X-band frequency band, it is inevitable that the occupied bandwidth of a target satellite will overlap with that of other X-band downlink satellites. For sun-synchronized low earth orbit satellites, in particular, it can be expected that two or more satellites be placed within the looking angle of a ground station antenna at the same time. Due to the overlapping in the frequency band, signals transmitted from the adjacent satellites act as interferers, leading to degraded link performance between target satellite and ground station. In this paper, link analysis was initiated by modeling the radiation pattern of ground station antenna through a validated Jet Propulsion Laboratory peak envelope model. From the relative antenna gain depending on the offset angle from center axis of maximum antenna directivity, the ratio of received interference signal level to the target signal level was calculated. As a result, it was found that the degradation increased when the offset angle was within the first point of radiation pattern. For a 7.3 m antenna, serious link degradation began at an offset angle of 0.4 degrees. From this analysis, the link performance of the coming satellite passes can be recognized, which is helpful to establish an operating procedure that will prevent the ground station from receiving corrupted image data in the event of a degraded link.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2014년도 제46회 동계 정기학술대회 초록집
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• pp.320-320
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• 2014

Amorphous silicon alloy (a-Si) solar cells and modules have been receiving a great deal of attention as a low-cost alternate energy source for large-scale terrestrial applications. Key to the achievement of high-efficiency solar cells using the multi-junction approach is the development of high quality, low band-gap materials which can capture the low-energy photons of the solar spectrum. Several cell designs have been reported in the past where grading or buffer layers have been incorporated at the junction interface to reduce carrier recombination near the junction. We have investigated profiling the composition of the a-SiGe alloy throughout the bulk of the intrinsic material so as to have a built-in electrical field in a substantial portion of the intrinsic material. As a result, the band gap mismatch between a-Si:H and $a-Si_{1-x}Ge_x:H$ creates a barrier for carrier transport. Previous reports have proposed a graded band gap structure in the absorber layer not only effectively increases the short wavelength absorption near the p/i interface, but also enhances the hole transport near the i-n interface. Here, we modulated the GeH4 flow rate to control the band gap to be graded from 1.75 eV (a-Si:H) to 1.55 eV ($a-Si_{1-x}Ge_x:H$). The band structure in the absorber layer thus became like a U-shape in which the lowest band gap was located in the middle of the i-layer. Incorporation of this structure in the middle and top cell of the triple-cell configuration is expected to increase the conversion efficiency further.

• 대한전자공학회논문지TC
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• 제48권6호
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• pp.34-40
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• 2011

본 논문에서는 도파관 하이브리드 커플러를 이용한 X-대역 모노펄스 레이더용 이미지 제거 SSB 변조기 설계에 대해 연구하였다. 일반적으로 SSB 변조기는 입력되는 IF(RF)신호와 LO 신호를 혼합하여 특정한 RF(IF) 주파수 대역으로 변환한다. 이 경우 SSB 변조기는 RF 대역에서 한쪽 측파대를 전송하기 위해, 이미지 신호와 LO 신호의 제거가 요구된다. LO 신호와 IF 신호를 혼합하기 위해, 도파관 하이브리드 커플러와 크리스탈 믹서 다이오드를 이용하여 평형믹서를 설계하였으며, 두 크리스탈 믹서 다이오드 입력에 적합한 $90^{\circ}$ 위상차를 갖는 IF(+)와 IF(-)신호 생성을 위한 IF 증폭기를 설계하였다. 설계된 각각의 도파관과 IF 증폭기 케이스는 고주파수 대역에서 높은 전기적 신뢰성을 유지하기 위해 딥 브레이징 기술을 이용하여 알루미늄으로 제작하였으며 제작된 SSB 변조기 측정결과 LO 신호와 측파대 신호 제거비는 각각 14.2dB와 18.5dB의 양호한 결과를 얻었다.

• 한국인터넷방송통신학회논문지
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• 제23권6호
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• pp.145-155
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• 2023

도파관과 매칭구조를 이용하여 X-band에서 고효율 결합특성을 갖는 방사형 결합기를 설계 및 제작하였다. 특히 소형으로 제작하기 위해서 도파관 하나에 포트를 2개 매칭할 수 있는 이중 도파관-동축 변환 구조를 적용하였다. 이러한 구조를 적용하면 일반적인 동축-도파관 방사형 결합기보다 소형 제작이 가능해진다. X-band 대역인 9.2-10GHz 에서 측정결과 반사손실 -18.408dB 이하, 출력삽입손실 0.206dB 이하의 결과값을 얻었고 또한 출력결합효율은 95.37% 이상의 높은 값을 얻을 수 있었다. 향후 밀리미터파 대역에서 고출력 송신기용 결합부에 활용 가능할 것으로 기대된다. 특히 크기와 무게를 줄임으로서 활용범위가 더 늘어날 것으로 기대된다.

• 센서학회지
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• 제13권4호
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• pp.277-281
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• 2004

$Hg_{1-x}Cd_{x}Te$ (MCT) was grown by hot wall epitaxy. Prior to the MCT growth, the CdTe (111) buffer layer was grown on the GaAs substrate at the temperature of $590^{\circ}C$ for 15 min. When the thickness of the CdTe buffer layer was $5{\mu}m$ or thicker, the full width at half maximum values obtained from the x-ray rocking curves were found to significantly decrease. After a good quality CdTe buffer layer was grown, the MCT epilayers were grown on the CdTe (111)/GaAs substrate at various temperatures in situ. The crystal quality for those epilayers was investigated by means of the x-ray rocking curves and the photocurrent experiment. The photoconductor characterization for the epilayers was also measured. The energy band gap of MCT was determined from the photocurrent measurement and the x composition rates from the temperature dependence of the energy band gap were turned out.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2010년도 하계학술대회 논문집
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• pp.379-379
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• 2010

$Hg_{1_x}Cd_xTe$ (MCT) was grown by hot wall epitaxy. Prior to the MCT growth, the CdTe (111) buffer layer was grown on the GaAs substrate at the temperature of $590^{\circ}C$ for 15 min. When the thickness of the CdTe buffer layer was $5\;{\mu}m$ or thicker, the full width at half maximum values obtained from the x-ray rocking curves were found to significantly decrease. After a good quality CdTe buffer layer was grown, the MCT epilayers were grown on the CdTe (111) /GaAs substrate at various temperatures in situ. The crystal quality for those epilayers was investigated by means of the x-ray rocking curves and the photocurrent experiment. The photoconductor characterization for the epilayers was also measured. The energy band gap of MCT was determined from the photocurrent measurement and the x composition rates from the temperature dependence of the energy band gap were turned out.

• Transactions on Control, Automation and Systems Engineering
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• 제1권1호
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• pp.69-74
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• 1999

Adaptive algorithms based on gradient adaptation have been extensively investigated and successfully joined with active noise/vibration control applications. The Filtered-X LMS algorithm became one of the basic feedforward algorithms in such applications, but is not fully understood yet. Effects of cancellation path model on the Filtered-X LMS algorithm have investigated and some useful properties related to stability were discovered. Most of the results stated that the error in the cancellation path model is undesirable to the Filtered X LMS. However, we started convergence analysis of Filtered-X LMS based on the assumption that erroneous model does not always degrade its performance. In this paper, we present a way of optimizing the cancellation path modern in order to enhance the convergence speed by introducing intentional phase error. Carefully designed intentional phase error enhances the convergence speed of the Filtered X LMS algorithm for pure tone noise suppression application without any performance loss at steady state.

• JSTS:Journal of Semiconductor Technology and Science
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• 제9권2호
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• pp.117-123
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• 2009

$Pb_{x}Cd_{1-x}S$ films are prepared in the composition range of 0.05${\leq}x{\leq}$0.25, using a chemical bath deposition growth technique under optimum conditions amide at realizing good photo response. The x-ray diffraction results show that the films are of PbS-CdS composite with individual CdS and PbS planes. The films exhibit two direct band gaps, 2.4 eV attributed to CdS, while the other varies continuously from 2.4 eV to 1.3 eV. The films surface morphology is smooth with crystallite, whose grain size increases with increasing mole fraction (x). The decrease in band gap with increase in lead concentration suggests inter-metallic compound of PbS (Eg=0.41 eV) with CdS (Eg=2.4 eV)

• 대한전자공학회논문지
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• 제24권3호
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• pp.445-452
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• 1987

In this paper, a model for characteristics in the AlxGa1-xAs layer of MODFET's is presented. The characteristics of conduction band in the AlxGa1-xAs layer is analyzed with the Fermi-Dirac statistics. And using the conduction band energy which is calculated with the numerical calculation method (false-Positon method), the variations of the electric-field distribution, the ionized donor concentration, and the two-dimensional electron gas density with gate voltage are calculated, respectively. The channel formation process for the parasitic MESFET operation in the MOD structure is also analyzed, and the characteristics in the AlxGa1-xAs layer is analytically modeled. The throretical results describe well the general characteristics in the MOD structure.