• 한국대기환경학회:학술대회논문집
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• 한국대기환경학회 1999년도 추계학술대회 논문집
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• pp.393-394
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• 1999

최근에 개발된 ultrathin window를 장착한 electron probe X-ray microanalysis(EPMA) 분석법(Ro et. el., 1999; Osan et. al., 1999; Szaloki et. al., 1999)은 종래의 통상적인 EPMA 방법으로는 분석하기 어려웠던 탄소, 질소, 산소 등의 원소를 정량적으로 분석할 수 있는 가능성을 제시하였다. 개개 입자의 형태와 크기 뿐 아니라 화학조성에 대한 정보를 제공하는 EPMA 분석법은 대기 중 개개 입자에 대한 생성, 이동, 반응 및 소멸에 관한 자세한 정보를 제공하기 때문에 지난 20여 년간 이 분석법을 사용하여 많은 연구가 진행되어 왔다.(중략)

• 한국전기전자재료학회논문지
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• 제36권3호
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• pp.226-232
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• 2023

As a potential alternative to flash memory, HfO₂/Al₂O₃ stacks appear to be a viable option as charge capture layers in charge trapping memories. The paper undertakes a review of HfO₂/Al₂O₃ stacks as charge trapping layers, with a focus on comparing the number, thickness, and post-deposition heat treatment and γ-ray and white x-ray treatment of such stacks. Compared to a single HfO₂ layer, the memory window of the 5-layered stack increased by 152.4% after O₂ annealing at ±12 V. The memory window enlarged with the increase in number of layers in the stack and the increase in the Al/Hf content in the stack. Furthermore, our comparison of the treatment of HfO₂/Al₂O₃ stacks with varying annealing temperatures revealed that an increased annealing temperature resulted in a wider storage window. The samples treated with O₂ and subjected to various γ radiation intensities displayed superior resistance. and the memory window increased to 12.6 V at ±16 V for 100 kGy radiation intensity compared to the untreated samples. It has also been established that increasing doses of white x-rays induced a greater number of deep defects. The optimization of stacking layers along with post-deposition treatment condition can play significant role in extending the memory window.

• JSTS:Journal of Semiconductor Technology and Science
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• 제12권2호
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• pp.162-167
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• 2012

This paper describes the design of a high-performance unified SVM classifier circuit. The proposed circuit supports both linear and non-linear SVM classifications. In order to ensure efficient classification, a 48x96 or 64x64 sliding window with 20 window strides is used. We reduced the circuit size by sharing most of the resources required for both types of classification. We described the proposed unified SVM classifier circuit using the Verilog HDL and synthesized the gate-level circuit using 65nm standard cell library. The synthesized circuit consists of 661,261 gates, operates at the maximum operating frequency of 152 MHz and processes up to 33.8 640x480 image frames per second.

• Bulletin of the Korean Chemical Society
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• 제19권1호
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• pp.107-109
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• 1998

The $SnO_2$, Sn-doped $In_2O+3\; and \;Ce-doped\; TiO_2$ films have been prepared by RF sputtering method, and their opto-electrochemical properties were investigated in view of the applicability as counter electrodes in the electrochromic window system. These oxide films could reversibly intercalate $Li^+$ ions owing to the nanocrystalline texture, but remained colorless and transparent. The high transmittance of the lithiated films could be attributed to the prevalence of the $Sn^{4+}/Sn^{2+}\; and\; Ce^{4+}/Ce^{3+}$ redox couples having 5s and 6s character conduction bands, respectively. For the Ce-doped $TiO_2$ film, $(TiO_2)_{1-x}(CeO_2)_x$, an optimized electrochemical reversibility was found in the film with the composition of x = 0.1.

• 한국결정학회지
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• 제8권2호
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• pp.105-110
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• 1997

CdS/CuInSe2 태양전지에서 창측재료로 1μm 두께의 CdS박막을 1x10-3mTorr의 진공하에서 CdS source 온도를 800-1100'C로 하고 기판의 온도를 50-200℃로하여 진공증차겁으로 제조하였다. 증착된 CdS박막의 구조적, 전기적, 광학적 특성조사는 x-ray diffractometer(XRD), scanning electron microscope(SEM), 전기비저항 측정, Hall measurement 그리고 optical transmission spectra로 행하였고, 각막들의 성분분석은 energy dispersive analysis of X-ray (EDAX)를 가하나, 광투과도는 감소하였다. 이때 증착된 CdS 박막들은 모두 hexagonal 구조를 가지고 있었으며, 결정성은 기판유리를 딸 (002)면으로 형성되었다. CdS Source 온도가 1000℃에서 증착된 CdS 박막이 0.9(S/cm)의 가장 높은 전기 전도도를 나타내었다. 또한 기판온도를 100'C로 제조한 CdS 박막이 전기비저항은 40(Ω,cm)이었고 광투과도는 80% 이상의 값을 나타내어 CdS/CuInSe2 태양전지의 창측재료로 적합했다.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2007년도 추계학술대회 논문집
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• pp.171-172
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• 2007

We fabricated the metal-ferroelectric-insulator-semiconductor filed-effect transistors (MFIS-FETs) using the $(Bi,La)_4Ti_3O_{12}\;and\;LaZrO_x$ thin films. The $LaZrO_x$ thin film had a equivalent oxide thickness (EOT) value of 8.7 nm. From the capacitance-voltage (C-V) measurements for an Au/$(Bi,La)_4Ti_3O_{12}/LaZrO_x$/Si MFIS capacitor, a hysteric shift with a clockwise direction was observed and the memory window width was about 1.4 V for the bias voltage sweeping of ${\pm}9V$. From drain current-gate voltage $(I_D-V_G)$ characteristics of the fabricated Fe-FETs, the obtained threshold voltage shift (memory window) was about 1 V due to ferroelectric nature of BLT film. The drain current-drain voltage $(I_D-V_D)$ characteristics of the fabricated Fe-FETs showed typical n-channel FETs current-voltage characteristics.

• 한국표면공학회지
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• 제52권2호
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• pp.53-57
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• 2019

Stability and activity of boron doped diamond (BDD) electrode are key factors for water treatment. In this study, BDD electrodes were prepared on various substrates such as Nb, Si, Ti, and $TiN_x/Ti$ by hot filament chemical vapor deposition (HFCVD) method. BDD/Ti film showed the delamination between BDD and Ti substrate due to the formation of TiC layer caused by diffusion of carbon. On the other hand, $BDD/TiN_x/Ti$ showed remarkably improved stability, compared to BDD/Ti. It was confirmed that $TiN_x$ intermediate layer act as barrier layer for diffusion of carbon. High potential window of 2.8 eV was maintained on the $BDD/TiN_x/Ti$ electrode and, better wastewater treatment capability and longer electrode working life than BDD/Nb, BDD/Si and BDD/Ti were obtained.

• 한국전기전자재료학회논문지
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• 제11권6호
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• pp.436-441
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• 1998

$Pt/SrTiO_3/Pb_x(Zr_{0.52}, Ti_{0.48})O_3/SrTiO_3/Si$ structure was prepared by rf-magnetron sputtering method for use in nondestructive read out ferroelectric RAM(NDRO-FEAM). PBx(Zr_{0.52}Ti_{0.48})O_3}$(PZT) and $SrTiO_3$(STO) films were deposited respectively at the temperatures of $300^{\circ}C and 500^{\circ}C$on p-Si(100) substrate. The role of the STO film as a buffer layer between the PZT film and the Si substrate was studied using X-ray diffraction (XRD), Auger electron spectroscopy (ASE), and scanning electron microscope(SEM). Structural analysis on the interfaces was carried out using a cross sectional transmission electron microscope(TEM). For PZT/Si structure, mostly Pb deficient pyrochlore phase was formed due to the serious diffusion of Pb into the Si substrate. On the other hand, for STO/PZT/STO/Si structure, the PZT film had perovskite phase and larger grain size with a little Pb interdiffusion. the interfaces of the PZT and the STO film, of the STO film and the interface layer and $SiO_2$, and of the $SiO_2$ and the Si substate had a good flatness. Across sectional TEM image showed the existence of an amorphous layer and $SiO_2$ with 7nm thickness between the STO film and the Si substrate. The electrical properties of MIFIS structure was characterized by C-V and I-V measurements. By 1MHz C-V characteristics Pt/STO(25nm)/PZT(160nm)/STO(25nm)/Si structure, memory window was about 1.2 V for and applied voltage of 5 V. Memory window increased by increasing the applied voltage and maximum voltage of memory window was 2 V for V applied. Memory window decreased by decreasing PZT film thickness to 110nm. Typical leakage current was abour $10{-8}$ A/cm for an applied voltage of 5 V.

• 한국정보과학회 언어공학연구회:학술대회논문집(한글 및 한국어 정보처리)
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• 한국정보과학회언어공학연구회 1995년도 제7회 한글 및 한국어 정보처리 학술대회
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• pp.73-79
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• 1995

현재 정보 관련 응용 분야 가운데 ISO 2022 를 따르는 분야가 아주 않은데, 현재 쓰고 있는 한글 부호계들은 ISO 2022 를 절대로 지원하지 못하거나, ISO 2022를 지원하더라도 한글을 재대로 지원하지 못하는 문제가 있다. 이러한 문제를 해결하기 위해서 ISO 2022 를 지원하면서 한글을 제대로 지원하는 새로운 한 바이트 한글 부호계를 만들었다. 새로운 한 바이트 한글 부호계는 요즘 한글 11,172 소리마디를 모두 표현 할 수 있으며, 불완전한 소리마디를 나타내는 방법으로 기존의 채움 글자 방식을 버리고 자연스럽고 한글의 특성에 맞는 뗌 글자 방식을 택하였다. 본 연구에서는 새로운 한 바이트 한글 부호계를 지원하는 X-Window용 한글 문서 편집기를 개발해 봄으로써 그 운용 가능성을 검증하였다. 한 바이트 한글 부호계를 지원하는 문서 편집기의 운용 환경으로 유닉스 운영체제 하에서 돌아가는 X-Window 시스템을 택하였고, 한글 입출력 부분을 모티프 (Motif)의 위짓 (widget) 형태로 구현하여 다른 응용 프로그램에서도 쉽게 한 바이트 한글 부호계를 지원할 수 있게 하였다.

• 한국신재생에너지학회:학술대회논문집
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• 한국신재생에너지학회 2005년도 춘계학술대회
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• pp.102-108
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• 2005

We have developed highly stabilized (p-i-n)-type protocrystalline silicon (pc-Si:H) multilayer solar cells. To achieve a high conversion efficiency, we applied a double-layer p-type amorphous silicon-carbon alloy $(p-a-Si_{1-x}C_x:H)$ structure to the pc-Si:H multilayer solar cells. The less pronounced initial short wavelength quantum efficiency variation as a function of bias voltage proves that the double $(p-a-Si_{1-x}C_x:H)$ layer structure successfully reduces recombination at the p/i interface. It was found that a natural hydrogen treatment involving an etch of the defective undiluted p-a-SiC:H window layer before the hydrogen-diluted p-a-SiC:H buffer layer deposition and an improvement of the order in the window layer. Thus, we achieved a highly stabilized efficiency of $9.0\%$ without any back reflector.