• 제목/요약/키워드: Working Plasma

검색결과 181건 처리시간 0.027초

AC PDP의 전기광학적 특성에 미치는 동작 Gas Xex+Ne1-x의 영향 (The Effect of Working Gas Xex+Ne1-x on the Electro-optical Characteristics of AC PDP)

  • 박정후;유수복;이돈규;이해준;이호준;김재성
    • 전기학회논문지
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    • 제56권1호
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    • pp.142-146
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    • 2007
  • Nowadays, itis inevitable trend to use high Xe gas contents for increase luminous efficiency and luminance in plasma display panel. However, the increase of Xe gas contents causes the driving voltage, although the brightness is increase. In this paper, we study the characteristics of electro optical according to Xe gas contents and gas pressure. Electro-optical characteristics were investigated by the discharge voltage, luminance and luminous efficacy measurements, respectively. With some increasing Xe gas contents and pressure, the electro-optical properties increased. However, the characteristics of electro-optical begin to be saturated, when too high increased Xe gas contents and pressure.

Etching Characteristics of Fine Ta Patterns with Electron Cyclotron Resonance Chlorine Plasma

  • Kim, Sang-Hoon;Woo, Sang-Gyun;Ahn, Jin-Ho
    • 한국마이크로전자및패키징학회:학술대회논문집
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    • 한국마이크로전자및패키징학회 2000년도 Proceedings of 5th International Joint Symposium on Microeletronics and Packaging
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    • pp.97-102
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    • 2000
  • We have studied etching characteristic of Ta film using Electron Cyclotron Resonance (ECR) etcher system. Microwave source power. RF bias power. and working pressure were varied to investigate the etch Profile. And we have used two step etching method to acquire the goWe have studied etching characteristic of Ta film using Electron Cyclotron Resonance (ECR) etcher system. Microwave source power. RF bias power. and working pressure were varied to investigate the etch Profile. And we have used two step etching method to acquire the good etch profile preventing the microloading effect.od etch profile preventing the microloading effect.

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International and Asian Networks on Intense Laser Science

  • Kato, Yoshiaki
    • Journal of the Optical Society of Korea
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    • 제13권1호
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    • pp.2-7
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    • 2009
  • This paper reviews evolution of the research networks on intense laser science under international and Asian frameworks during 2000 to 2008. The OECD Global Science Forum Steering Committee on Compact, High-Intensity Short-Pulse Lasers led to the establishment of the International Union of Pure and Applied Physics (IUPAP) Working Group: International Committee on Ultrahigh Intensity Lasers (ICUIL) and the Asian Intense Laser Network (AILN) in 2004. Through various activities under AILN such as the Asian Symposium on Intense Laser Science (ASILS), the Asian Summer School on Laser Plasma Acceleration and Radiation, and the High-Order Harmonics Workshops, closer relations are being formed among the scientists and also among the young generations working in intense laser science in the Asian regions.

PDP 투명전극의 응용을 위한 ZnO:Al 박막의 제작 및 평가 (Properties of ZnO:Al Transparent Conducting Films for PDP)

  • 박강일;김병섭;김현수;임동건;박기엽;이세종;곽동주
    • 대한전기학회:학술대회논문집
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    • 대한전기학회 2003년도 하계학술대회 논문집 C
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    • pp.1430-1432
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    • 2003
  • Al doped Zinc Oxide(ZnO:Al) films, which is widely used as a transparent conductor in optoelectronic devices such as solar cell, plasma display panel, thermal heater, and other sensors, were prepared by using the capacitively coupled DC magnetron sputtering method. The influence of the substrate temperature, working gas pressure and deposition time on the electrical, optical and morphological properties were investigated experimentally. ZnO:Al films with the optimum growth conditions of working gas pressure and substrate temperature showed resistivity of $9.64{\times}10^{-4}\;{\Omega}$-cm and transmittance of 90.02% for a film 860nm thick in the wavelength range of the visible spectrum.

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Regulation of Blood Glucose Homeostasis during Prolonged Exercise

  • Suh, Sang-Hoon;Paik, Il-Young;Jacobs, Kevin A.
    • Molecules and Cells
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    • 제23권3호
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    • pp.272-279
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    • 2007
  • The maintenance of normal blood glucose levels at rest and during exercise is critical. The maintenance of blood glucose homeostasis depends on the coordination and integration of several physiological systems, including the sympathetic nervous system and the endocrine system. During prolonged exercise increased demand for glucose by contracting muscle causes to increase glucose uptake to working skeletal muscle. Increase in glucose uptake by working skeletal muscle during prolonged exercise is due to an increase in the translocation of insulin and contraction sensitive glucose transporter-4 (GLUT4) proteins to the plasma membrane. However, normal blood glucose level can be maintained by the augmentation of glucose production and release through the stimulation of liver glycogen breakdown, and the stimulation of the synthesis of glucose from other substances, and by the mobilization of other fuels that may serve as alternatives. Both feedback and feedforward mechanisms allow glycemia to be controlled during exercise. This review focuses on factors that control blood glucose homeostasis during prolonged exercise.

평판 유도 결합형 $CH_4/H_2/Ar$ 플라즈마를 이용한 GaN 건식 식각에서 공정변수가 저항성 접촉 형성에 미치는 영향 (The Effects of Etch Process Parameters on the Ohmic Contact Formation in the Plasma Etching of GaN using Planar Inductively Coupled $CH_4/H_2/Ar$ Plasma)

  • 김문영;태흥식;이호준;이용현;이정희;백영식
    • 대한전기학회논문지:전기물성ㆍ응용부문C
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    • 제49권8호
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    • pp.438-444
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    • 2000
  • We report the effects of etch process parameters on the ohmic contact formation in the plasma etching of GaN. Planar inductively coupled plasma system with $CH_4/H_2/Ar$gas chemistry has been used as etch reactor. The contact resistance and the specific contact resistance have been investigated using transfer length method as a function of RF bias power and %Ar gas concentration in total flow rate. AES(Auger electron spectroscopy) analysis revealed that the etched GaN has nonstoichiometric Ga rich surface and was contaminated by carbon and oxygen. Especially large amount of carbon was detected at the sample etched for high bias power (or voltage) condition, where severe degradation of contact resistance was occurred. We achieved the low ohmic contact of $2.4{\times}10^{-3} {\Omega}cm^2$ specific contact resistance at the input power 400 W, RF bias power 150 W, and working pressure 10mTorr with 10 sccm $CH_4$, 15 sccm H2, 5 sccm Ar gas composition.

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The Effects of CF4 Partial Pressure on the Hydrophobic Thin Film Formation on Carbon Steel by Surface Treatment and Coating Method with Linear Microwave Ar/CH4/CF4 Plasma

  • Han, Moon-Ki;Cha, Ju-Hong;Lee, Ho-Jun;Chang, Cheol Jong;Jeon, Chang Yeop
    • Journal of Electrical Engineering and Technology
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    • 제12권5호
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    • pp.2007-2013
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    • 2017
  • In order to give hydrophobic surface properties on carbon steel, the fluorinated amorphous carbon films were prepared by using linear 2.45GHz microwave PECVD device. Two different process approaches have been tested. One is direct deposition of a-C:H:F films using admixture of $Ar/CH_4/CF_4$ working gases and the other is surface treatment using $CF_4$ plasma after deposition of a-C:H film with $Ar/CH_4$ binary gas system. $Ar/CF_4$ plasma treated surface with high $CF_4$ gas ratio shows best hydrophobicity and durability of hydrophobicity. Nanometer scale surface roughness seems one of the most important factors for hydrophobicity within our experimental conditions. The properties of a-C:H:F films and $CF_4$ plasma treated a-C:H films were investigated in terms of surface roughness, hardness, microstructure, chemical bonding, atomic bonding structure between carbon and fluorine, adhesion and water contact angle by using atomic force microscopy (AFM), nano-indentation, Raman analysis and X-ray photoelectron spectroscopy (XPS).

Research on accurate morphology predictive control of CFETR multi-purpose overload robot

  • Congju Zuo;Yong Cheng;Hongtao Pan;Guodong Qin;Pucheng Zhou;Liang Xia;Huan Wang;Ruijuan Zhao;Yongqiang Lv;Xiaoyan Qin;Weihua Wang;Qingxi Yang
    • Nuclear Engineering and Technology
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    • 제56권10호
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    • pp.4412-4422
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    • 2024
  • The CFETR multipurpose overload robot (CMOR) is a critical component of the fusion reactor remote handling system. To accurately calculate and visualize the structural deformation and stress characteristics of the CMOR motion process, this paper first establishes a CMOR kinematic model to analyze the unfolding and working process in the vacuum chamber. Then, the dynamic model of CMOR is established using the Lagrangian method, and the rigid-flexible coupling modeling of CMOR links and joints is achieved using the finite element method and the linear spring damping equivalent model. The co-simulation results of the CMOR rigid-flexible coupled model show that when the end load is 2000 kg, the extreme value of the end-effector position error is more than 0.12 m, and the maximum stress value is 1.85 × 108 Pa. To utilize the stress-strain data of CMOR, this paper designs a CMOR morphology prediction control system based on Unity software. Implanting CMOR finite element analysis data into the Unity environment, researchers can monitor the stress strain generated by different motion trajectories of the CMOR robotic arm in the control system. It provides a platform for subsequent research on CMOR error compensation and extreme operation warnings.

Gasification of Surface Carbon Contaminant during Discharge in Plasma Display Panel (PDP)

  • Soh, Hyun;Cho, Sung-Ho;Kim, Young-Chai
    • 한국정보디스플레이학회:학술대회논문집
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    • 한국정보디스플레이학회 2003년도 International Meeting on Information Display
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    • pp.795-798
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    • 2003
  • Inside of working PDP, there exist highly reactive conditions in the gap between two glass panels. MgO layer and phosphor have been investigated as a function of discharge and temperature. A drastic reduction in carbon impurity was observed on the surfaces after discharging and heat treatment. Carbon composition on the MgO and phosphor is a dominant factor for their instability

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하이퍼써멀 에너지 영역에서 높은 플럭스 입자빔 생성을 위한 플라즈마 발생원 (Plasma Sources for Production of High Flux Particle Beams in Hyperthermal Energy Range)

  • 유석재;김성봉
    • 한국진공학회지
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    • 제18권3호
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    • pp.186-196
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    • 2009
  • 하이퍼써멀 영역의 에너지 ($1{\sim}100\;eV$), 특히, 50 eV 이하의 에너지를 갖는 높은($10^{16}$ particles/$cm^2\;s$ 이상) 플럭스의 이온빔을 직접 인출하기는 어렵지만, 이온을 중성화한 중성입자빔 경우에는 가능하다. 높은 플럭스의 하이퍼써멀 중성입자빔을 생성하고 효율적으로 수송하기 위해서는 낮은 플라즈마 운전압력(0.3 mTorr 이하)에서도 높은 이온밀도($10^{11}\;cm^{-3}$ 이상)를 유지할 수 있는 대면적 플라즈마 발생원이 요구된다. 이러한 하이퍼써멀 중성입자빔의 생성을 위해 요구되는 플라즈마 발생원을 구현하기 위해서는 자기장에 의한 전자가둠 방식이 도입되어야 하는데, 영구자석을 이용한 다양한 자기장 구조를 갖는 Electron Cyclotron Resonance (ECR) 플라즈마 발생 방식이 하나의 해결 방법이 될 수 있음을 제안하였다. 여기에는 마그네트론 구조를 갖는 자기장을 채택한 평면형 ECR 플라즈마 발생 방식과 원통형 플라즈마 용기 외벽 둘레에 영구자석 어레이를 설치하여 축방향 자기장을 형성하고 용기 중심부에 전자를 가두는 원통형 방식이 있다. 두 경우 모두 기본적으로 mirror field 구조에 의한 전자 가둠을 기반으로 하고 전자의 drift에 의해 더욱 효율적으로 전자를 플라즈마 공간에 가두는 방식을 도입하고 있어서 낮은 운전압력에서도 높은 밀도의 플라즈마를 발생시키고 유지할 수 있다.