• Proceedings of the Korean Vacuum Society Conference
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• 2016.02a
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• pp.295-295
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• 2016

Recently, TCO films with low carrier concentration, high mobility and high work function are proposed beneficial as front electrode in HIT solar cell due to free-carrier absorption in NIR wavelength region and low Schottky barrier height in the front TCO/a-Si:H(p) interface. We report high transmittance and work function zirconium-doped indium tin oxide (ITO:Zr) films with various plasma (Ar/O2 and Ar) conditions. The role of (Ar/O2) plasma was to enhance the work function of the ITO:Zr films whereas the pure Ar plasma based ITO:Zr showed good electrical properties. The RF magnetron sputtered ITO:Zr films with low resistivity and high transmittance were employed as front electrode in HIT solar cells, yield the best performance of 18.15% with an open-circuit voltage of 710 eV and current density of 34.63 mA/cm2. The high work function ITO:Zr films can be used to modify the front barrier height of HIT solar cell.

• Journal of the Korean Chemical Society
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• v.61 no.1
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• pp.12-15
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• 2017

We presented a mapping the work function of the vanadium pentoxide ($V_2O_5$) nanonet structures by scanning Kelvin probe microscopy (SKPM). In this measurement, the $V_2O_5$ nanonet was self-assembled via dropping the solution of $V_2O_5$ nanowires (NWs) onto the $SiO_2$ substrate and drying the solvent, resulting in the networks of $V_2O_5$ NWs. We found that the SKPM signal as a surface potential of $V_2O_5$ nanonet is attributed to the contact potential difference (CPD) between the work functions of the metal tip and the $V_2O_5$ nanonet. We generated the histograms of the CPD signals obtained from the SKPM mapping of the $V_2O_5$ nanonet as well as the highly ordered pyrolytic graphite (HOPG) which is used as a reference for the calibration of the SKPM tip. By using the histogram peaks of the CPD signals, we successfully estimated the work function of ~5.1 eV for the $V_2O_5$ nanonet structures. This work provides a possibility of a nanometer-scale imaging of the work function of the various nanostructures and helps to understand the electrical characteristics of the future electronic devices.

• Korean Journal of Materials Research
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• v.21 no.9
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• pp.491-496
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• 2011

Transparent conducting oxides (TCOs) used in the antireflection layer and current spreading layer of heterojunction solar cells should have excellent optical and electrical properties. Furthermore, TCOs need a high work function over 5.2 eV to prevent the effect of emitter band-bending caused by the difference in work function between emitter and TCOs. Sn-doped $In_2O_3$ (ITO) film is a highly promising material as a TCO due to its excellent optical and electrical properties. However, ITO films have a low work function of about 4.8 eV. This low work function of ITO films leads to deterioration of the conversion efficiency of solar cells. In this work, ITO films with various Zn contents of 0, 6.9, 12.7, 28.8, and 36.6 at.% were fabricated by a co-sputtering method using ITO and AZO targets at room temperature. The optical and electrical properties of Zn-doped ITO thin films were analyzed. Then, silicon heterojunction solar cells with these films were fabricated. The 12.7 at% Zn-doped ITO films show the highest hall mobility of 35.71 $cm^2$/Vsec. With increasing Zn content over 12.7, the hall mobility decreases. Although a small addition of Zn content increased the work function, further addition of Zn content over 12.7 at.% led to decreasing electrical properties because of the decrease in the carrier concentration and hall mobility. Silicon heterojunction solar cells with 12.7 at% Zn-doped ITO thin films showed the highest conversion efficiency of 15.8%.

• Safety and Health at Work
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• v.3 no.4
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• pp.278-286
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• 2012

Objectives: Authors investigated the pattern of the rate of occupational injuries and illnesses (ROII) at the level of enterprises in order to build a network for exchange of experience and knowledge, which would contribute to workers' safety and health through safety climate of workplace. Methods: Occupational accidents were analyzed at the manufacturing work site unit. A two step clustering process for the past patterns regarding the ROII from 2001 to 2009 was investigated. The ROII patterns were categorized based on regression analysis and the patterns were further divided according to the subtle changes with Mahalanobis distance and Ward's linkage. Results: The first clustering of ROII through regression analysis showed 5 different functions; 29 work sites of the linear function, 50 sites of the quadratic function, 95 sites of the logarithm function, 62 sites of the exponential function, and 54 sites of the sine function. Fourteen clusters were created in the second clustering. There were 3 clusters in each function categorized in the first clustering except for sine function. Each cluster consisted of the work sites with similar ROII patterns, which had unique characteristics. Conclusion: The five different patterns of ROII suggest that tailored management activities should be applied to every work site. Based on these differences, the authors selected exemplary work sites and built a network to help the work sites to share information on safety climate and accident prevention measures. The causes of different patterns of ROII, building network and evaluation of this management model should be evaluated as future researches.

• Proceedings of the Korean Vacuum Society Conference
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• 2016.02a
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• pp.426.1-426.1
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• 2016

We report high work function Aluminum doped zinc oxide (AZO) films as insertion layer as a function of O2 flow rate between transparent conducting oxides (TCO) and hydrogenated amorphous silicon oxide (a-SiOx:H) layer to improve open circuit voltage (Voc) and fill factor (FF) for high efficiency thin film solar cell. However, amorphous silicon (a-Si:H) solar cells exhibit poor fill factors due to a Schottky barrier like impedance at the interface between a-SiOx:H windows and TCO. The impedance is caused by an increasing mismatch between the work function of TCO and that of p-type a-SiOx:H. In this study, we report on the silicon thin film solar cell by using as insertion layer of O2 reactive AZO films between TCO and p-type a-SiOx:H. Significant efficiency enhancement was demonstrated by using high work-function layers (4.95 eV at O2=2 sccm) for engineering the work function at the key interfaces to raise FF as well as Voc. Therefore, we can be obtained the conversion efficiency of 7 % at 13mA/cm2 of the current density (Jsc) and 63.35 % of FF.

• Human Ecology Research
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• v.60 no.4
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• pp.507-520
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• 2022

The present study identified the effects of parents' work-family conflict on their and partners' co-parenting quality, as well as the mediating roles of co-parenting quality and children's executive function difficulties in linking parents' work-family conflict to their children's school adjustment. This study used data from 387 dual-earner parents and their first-grade elementary school children, who participated in the Panel Study on Korean Children. An actor-partner interdependence and mediation model analysis using structural equation modeling revealed the following findings: first, the actor and partner effects of parents' work-family conflict on co-parenting quality were significant for both fathers and mothers. Second, the effect of the fathers' work-family conflict on their co-parenting quality was found to be greater than that of the mothers' work-family conflict on the fathers' co-parenting quality. Third, fathers' and mothers' work-family conflict, respectively, exerted an indirect effect on their children's school adjustment through the serial mediation by the mothers' co-parenting quality and children's executive function difficulties, whereas the direct effects of fathers' and mothers' work-family conflict on children's school adjustment were not supported. Finally, this study suggests that co-parenting quality and children's executive function should be considered to facilitate children's school adjustment in the parent education of dual-earner families with first-grade elementary school children, and that continuous policy efforts for dual-earner parents' work-family balance are needed.

• Safety and Health at Work
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• v.1 no.2
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• pp.158-166
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• 2010

Objectives: This study aimed to find gender distinctions in terms of the sociology of the population; to determine work-related factors; to analyze gender differences in daily living, work, sports, and art performances; and to identify gender-related factors that limited performance of daily living and work activities. Methods: A questionnaire was designed that included disabilities of the arm, shoulder, and hand (DASH), accident history, disease history, work duration at current workplace, marital status, job satisfaction, job autonomy, and physical demands of the job. Out of 1,853 workers surveyed, 1,173 questionnaires (63.3%; 987 males, 186 females) included responses to DASH disability and DASH optional work and were judged acceptable for analysis. Results: Upper extremity functional limitation during work and daily living was higher for females than males. The limitations for males increased according to their household work time, accident history, work duration, job satisfaction, physical demand, and job autonomy. Meanwhile, female workers' upper extremity discomfort was influenced by their disease history, job satisfaction, and physical demands. In addition, the size of the company affected male workers' upper extremity function, while marriage and hobbies influenced that of female workers. Conclusion: This study addressed sociodemographic factors and work-related factors that affect each gender's upper extremity function during daily living and working activities. Each factor had a different influence. Further studies are needed to identify the effect that role changes, not being influenced by risks at work, have on musculoskeletal disorders.

• Journal of the Korean Society of Costume
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• v.63 no.3
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• pp.166-175
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• 2013

The attire of businesspersons has a significant impact on their social status and career. In accordance with the norms of the work place, the types of office attire are diversified. This research was conducted to determine the relationship between the work role of men and their attire, and how satisfaction with their work attire influences their job satisfaction. This study classifies work attire into three categories: uniform, suit, and freestyle. Data from 268 respondents were analyzed, and four work attire satisfaction factors were extracted: symbolic, quality, role function, and aesthetic factors. The group members wearing uniforms displayed a high level of satisfaction with regard to symbolism, role function, and quality; those wearing suits displayed a high level of satisfaction with regard to aesthetics; and those wearing freestyle displayed a high level of satisfaction with regard to role function and aesthetics. Overall, satisfaction with work attire was the highest in the freestyle group. For people wearing uniforms and suits, symbolism, quality, and aesthetics had a significant influence on overall satisfaction, whereas for those wearing freestyle, symbolism had a negative influence and quality had a positive influence on overall satisfaction. To conclude, work attire satisfaction had a greater effect on the job satisfaction of the men in uniforms and suits than on those wearing freestyle.

• Proceedings of the Korean Vacuum Society Conference
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• 2014.02a
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• pp.382.1-382.1
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• 2014

Graphene field-effect transistors (GFET) is one of candidates for future high speed electronic devices since graphene has unique electronic properties such as high Fermi velocity (vf=10^6 m/s) and carrier mobility ($15,000cm^2/V{\cdot}s$) [1]. Although the contact property between graphene and metals is a crucial element to design high performance electronic devices, it has not been clearly identified. Therefore, we need to understand characteristics of graphene/metal contact in the GFET. Recently, it is theoretically known that graphene on metal can be doped by presence of interface dipole layer induced by charge transfer [2]. It notes that doping type of graphene under metal is determined by difference of work function between graphene and metal. In this study, we present the GFET fabricated by contact metals having high work function (Pt, Ni) for p-doping and low work function (Ta, Cr) for n-doping. The results show that asymmetric conductance depends on work function of metal because the interfacial dipole is locally formed between metal electrodes and graphene. It induces p-n-p or n-p-n junction in the channel of the GFET when gate bias is applied. In addition, we confirm that charge transfer regions are differently affected by gate electric field along gate length.

• Proceedings of the Korean Vacuum Society Conference
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• 2014.02a
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• pp.351.2-351.2
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• 2014

Indium tin oxide (ITO) has a lot of variations of its properties because it is basically in an amorphous state. Therefore, the differences in composition ratio of ITO can result in alteration of electrical properties. Normally, ITO is considered as transparent conductive oxide (TCO), possessing excellent properties for the optical and electrical devices. Quantitatively, TCO has transparency over 80 percent within the range of 380nm to 780nm, which is visible light although its specific resistance is less than $10-3{\Omega}/cm$. Thus, the solar cell is the best example for which ITO has perfectly matching profile. In addition, when ITO is used as transparent conductive electrode, this material essentially has to have a proper work function with contact materials. For instance, heterojunction with intrinsic thin layer (HIT) solar cell could have both front ITO and backside ITO. Because each side of ITO films has different type of contact materials, p-type amorphous silicon and n-type amorphous silicon, work function of ITO has to be modified to transport carrier with low built-in potential and Schottky barrier, and approximately requires variation from 3 eV to 5 eV. In this study, we examine the change of work function for different sputtering conditions using ultraviolet photoelectron spectroscopy (UPS). Structure of ITO films was investigated by spectroscopic ellipsometry (SE) and scanning electron microscopy (SEM). Optical transmittance of the films was evaluated by using an ultraviolet-visible (UV-Vis) spectrophotometer