Hexagonal boron nitride (h-BN), commonly referred to as Boron Nitride Nanoribbons (BNNRs), is an electrical insulator characterized by high thermal stability and a wide bandgap semiconductor property. This study delves into the electronic properties of two BNNR configurations: Armchair BNNRs (ABNNRs) and Zigzag BNNRs (ZBNNRs). Utilizing the nearest-neighbour tight-binding approach and numerical methods, the electronic properties of BNNRs were simulated. A simplifying assumption, the Hamiltonian matrix is used to compute the electronic properties by considering the self-interaction energy of a unit cell and the interaction energy between the unit cells. The edge perturbation is applied to the selected atoms of ABNNRs and ZBNNRs to simulate the electronic properties changes. This simulation work is done by generating a custom script using numerical computational methods in MATLAB software. When benchmarked against a reference study, our results aligned closely in terms of band structure and bandgap energy for ABNNRs. However, variations were observed in the peak values of the continuous curves for the local density of states. This discrepancy can be attributed to the use of numerical methods in our study, in contrast to the semi-analytical approach adopted in the reference work.
KSII Transactions on Internet and Information Systems (TIIS)
/
v.18
no.4
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pp.1042-1058
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2024
Terahertz (THz) communication is becoming a key technology for future 6G wireless networks because of its ultra-wide band. However, the implementation of THz communication systems confronts formidable challenges, notably beam splitting effects and high computational complexity associated with them. Our primary objective is to design a hybrid precoder that minimizes the Euclidean distance from the fully digital precoder. The analog precoding part adopts the delay-phase alternating minimization (DP-AltMin) algorithm, which divides the analog precoder into phase shifters and time delayers. This effectively addresses the beam splitting effects within THz communication by incorporating time delays. The traditional digital precoding solution, however, needs matrix inversion in THz massive multiple-input multiple-output (MIMO) communication systems, resulting in significant computational complexity and complicating the design of the analog precoder. To address this issue, we exploit the characteristics of THz massive MIMO communication systems and construct the digital precoder as a product of scale factors and semi-unitary matrices. We utilize Schatten norm and Hölder's inequality to create semi-unitary matrices after initializing the scale factors depending on the power allocation. Finally, the analog precoder and digital precoder are alternately optimized to obtain the ultimate hybrid precoding scheme. Extensive numerical simulations have demonstrated that our proposed algorithm outperforms existing methods in mitigating the beam splitting issue, improving system performance, and exhibiting lower complexity. Furthermore, our approach exhibits a more favorable alignment with practical application requirements, underlying its practicality and efficiency.
KSII Transactions on Internet and Information Systems (TIIS)
/
v.18
no.5
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pp.1317-1340
/
2024
With the rapid development of information technology, people's demands on precise indoor positioning are increasing. Wireless sensor network, as the most commonly used indoor positioning sensor, performs a vital part for precise indoor positioning. However, in indoor positioning, obstacles and other uncontrollable factors make the localization precision not very accurate. Ultra-wide band (UWB) can achieve high precision centimeter-level positioning capability. Inertial navigation system (INS), which is a totally independent system of guidance, has high positioning accuracy. The combination of UWB and INS can not only decrease the impact of non-line-of-sight (NLOS) on localization, but also solve the accumulated error problem of inertial navigation system. In the paper, a fused UWB and INS positioning method is presented. The UWB data is firstly clustered using the Fuzzy C-means (FCM). And the Z hypothesis testing is proposed to determine whether there is a NLOS distance on a link where a beacon node is located. If there is, then the beacon node is removed, and conversely used to localize the mobile node using Least Squares localization. When the number of remaining beacon nodes is less than three, a robust extended Kalman filter with M-estimation would be utilized for localizing mobile nodes. The UWB is merged with the INS data by using the extended Kalman filter to acquire the final location estimate. Simulation and experimental results indicate that the proposed method has superior localization precision in comparison with the current algorithms.
In this Paper, we analyze the application of Interactive Data Broadcasting in DMB(Digital Multimedia Broadcasting) in the accordance with convergence of service and technology. With the acceleration of digital convergence in the Ubiquitous period substantial development of digital media technology and convergence of broadcasting and telecommunication industry are being witnessed. Consequently these results gave rise to newly combined-products such as DMB(Digital Multimedia Broadcasting), WCDMA(Wide-band code division multiple access), Wibro(Wireless Broadband Internet), IP-TV (Internet protocol TV) and HSDPA(High speed downlink packet access). The preparatory stage for the implementation of Interactive Data Broadcasting Service will be reached by the end of December, 2006. DMB is the first result of a successful convergence service between Broadcasting and Telecommunication in new media era. Multimedia technology and services are the core elements of DMB. The Data Broadcasting will not only offer various services of interactive information such News, Weather, Broadcasting Program etc, but also be linked with characteristic function of mobile phone such as calling and SMS(Short Message Service) via Return Channel.
Correlation between chlorophyll a in the East China Sea and spectral bands (412, 443, 490, (510), 555, (676, 765)nm) of Ocean Scanning Multi-Spectral Imager (OSMI) including the profile multi-spectral radiometer (PRR-800) was studied. The values of remote sensing reflectance (Rrs) at the bands corresponding to the field chlorophyll $\alpha$ in the East China Sea were much higher than those in clear waters off California, USA. In case of the particle absorptions related to the chlorophyll a concentration at the spectral bands (440, 670nm) were much higher in the East China Sea than the ones in the clean waters off California. The normalized water leaving radiances (nLw) at 412, 443, 490, 555 nm of OSMI and the field chlorophyll a in the East China Sea were correlated each other. According to the results, the relationship between field chlorophyll $\alpha$ and nLw 410 nm in OSMI bands was the lowest, whereas that between field chlorophyll a and nLw 555 nm in the bands was the highest. Reciprocal action between the field chlorophyll a and the band ratio of the OSMI bands (nLw410/nLw555, nLw443/nLw555, nLw490/nLw555) was also studied. Relationship between the chlorophyll $\alpha$ and the band ratio (nLw490/nLw555) was highest in the OSMI bands. Relationship between the chlorophyll $\alpha$ and the ratio (nLw490/nLw555) was higher than one in the nLw410/nLw555. The difference in the estimated chlorophyll $\alpha$ (mg/m$^3$) between OSMI and SeaWiFS (Sea Viewing Wide Field-of-View Sensor) at the special observing stations in the northern eastern sea of Jeju Island in February 25, 2002 was about less than 0.3 mg/m$^3$ within 3 hours. It is suggested that OC2 (ocean color chlorophyll 2 algorithm) be used to get much better estimation of chlorophyll $\alpha$ from OSMI than the ones from the updated algorithms as OC4.
Journal of the Korean Crystal Growth and Crystal Technology
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v.34
no.4
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pp.109-116
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2024
β-Ga2O3 is a representative ultra-wide bandgap (UWBG) semiconductor that has attracted much attention for power device applications due to its wide-bandgap of 4.9 eV and high-breakdown voltage of 8 MV/cm. In addition, because solution growth is possible, it has advantages such as fast growth rate and lower production cost compared to SiC and GaN [1-2]. In this study, we have successfully grown Si-doped 10 mm thick Si-doped β-Ga2O3 single crystals by the EFG (Edge-defined Film-fed Growth) method. The growth direction and growth principal plane were set to [010] / (010), respectively, and the growth speed was 7~20 mm/h. The as-grown β-Ga2O3 single crystal was cut into various crystal planes (001, 100, ${\bar{2}}01$) and off-angles (1o, 3o, 4o), and then surface processed. After processed, the homoepitaxial layer was grown on the epi-ready substrate using the HVPE (Halide vapor phase epitaxy) method. The processed samples and the epi-layer grown samples were analyzed by XRD, AFM, OM, and Etching to compare the surface properties according to the crystal plane and off-angle.
A tree of Ailanthus altissima Swingle was fastened with a plastic band, 19mm wide, around the stem 180cm above ground level and was left to grow under this condition for one year, By removal of this band the tumorous tissue gradually developed and the tree bearing distinct tumorous tissue, an overgrowth surrounding the stem, was harvested two years after the band removal. For the investigation of this tumorous part and its comparison with adjacent normal parts in the anatomical features of individual elements, the tumorous part and parts directly and 40cm above and below the tumorous part were obtained from the tree. The tumor wood having remarkably wider growth increment occurred in the 3rd growth ring the first year after removal of the fastened band, and the barrier zone which delimited the discolored wood from the normal-colored wood inwards appeared u1 the intra-2nd growth ring produced during the fastened period in the tumorous part and the false ring-like zones equivalent to barrier Zone were shown in the normal-colored 2nd growth rings of the parts directly and 40cm above and below the tumorous part, as well. The tumor wood, the 3rd growth ring, and proportion of the 2nd growth ring formed after barrier zone in the tumorous part shared common characteristics in the irregular growth ring boundary, misshapen and shorter individual fibers and vessel elements, and large ray widths and heights. The springwood pores were smaller in diameter in the tumor wood, and the larger radial and smaller tangential diameters of summerwood solitary pores and individual pores consisting of pore multiples in proportion of the 2nd growth ring formed after the barrier zone were transformed into near-isodiametric in the tumor wood, the 3rd growth ring, in the tumorous part. Only in proportion of the 2nd growth ring formed after the barrier zone were transformed into near-isodiametric in the tumor wood, the 3rd growth ring, in the tumorous part, ray densities greatly increased. And the massive tumor wood was caused not by cell size but by cell number because the radial and tangential diameters of fibers in the tumor wood, the 3rd growth ring, in the tumorous part were not sufficiently different from those in the same aged growth rings of the directly and 40cm above and below the tumorous part.
Park, Chan-Yong;Kim, Dug-Bong;Kim, Chung-Hwan;Kwon, Yongjoon;Kang, EungCheol;Lee, Changjae;Choi, Soon-Gyu;La, Jongpil;Ko, Jin Sin
Korean Journal of Optics and Photonics
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v.24
no.1
/
pp.1-8
/
2013
In this paper, we report design, fabrication and characterization of the WBRM (Wide Band Receiver Module) for LADAR (LAser Detection And Ranging) application. The WBRM has been designed and fabricated using self-made APD (Avalanche Photodiode) and TIA (Trans-impedance Amplifier). The APD and TIA chips have been integrated on 12-pin TO8 header using self-made ceramic submount and circuit. The WBRM module showed 450 ps of rise time, and corresponding 780 MHz bandwidth. Furthermore, it showed very low output noise less than 0.8 mV, and higher SNR than 15 for 150 nW of MDS(Minimum Detectable Signal). To the author's knowledge, this is the best performance of an optical receiver module for LIDAR fabricated by 200 um InGaAs APD.
Proceedings of the Korean Vacuum Society Conference
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2012.08a
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pp.115-116
/
2012
The demand for flexible electronic systems such as wearable computers, E-paper, and flexible displays has increased due to their advantages of excellent portability, conformal contact with curved surfaces, light weight, and human friendly interfaces over present rigid electronic systems. This seminar introduces three recent progresses that can extend the application of high performance flexible inorganic electronics. The first part of this seminar will introduce a RRAM with a one transistor-one memristor (1T-1M) arrays on flexible substrates. Flexible memory is an essential part of electronics for data processing, storage, and radio frequency (RF) communication and thus a key element to realize such flexible electronic systems. Although several emerging memory technologies, including resistive switching memory, have been proposed, the cell-to-cell interference issue has to be overcome for flexible and high performance nonvolatile memory applications. The cell-to-cell interference between neighbouring memory cells occurs due to leakage current paths through adjacent low resistance state cells and induces not only unnecessary power consumption but also a misreading problem, a fatal obstacle in memory operation. To fabricate a fully functional flexible memory and prevent these unwanted effects, we integrated high performance flexible single crystal silicon transistors with an amorphous titanium oxide (a-TiO2) based memristor to control the logic state of memory. The $8{\times}8$ NOR type 1T-1M RRAM demonstrated the first random access memory operation on flexible substrates by controlling each memory unit cell independently. The second part of the seminar will discuss the flexible GaN LED on LCP substrates for implantable biosensor. Inorganic III-V light emitting diodes (LEDs) have superior characteristics, such as long-term stability, high efficiency, and strong brightness compared to conventional incandescent lamps and OLED. However, due to the brittle property of bulk inorganic semiconductor materials, III-V LED limits its applications in the field of high performance flexible electronics. This seminar introduces the first flexible and implantable GaN LED on plastic substrates that is transferred from bulk GaN on Si substrates. The superb properties of the flexible GaN thin film in terms of its wide band gap and high efficiency enable the dramatic extension of not only consumer electronic applications but also the biosensing scale. The flexible white LEDs are demonstrated for the feasibility of using a white light source for future flexible BLU devices. Finally a water-resist and a biocompatible PTFE-coated flexible LED biosensor can detect PSA at a detection limit of 1 ng/mL. These results show that the nitride-based flexible LED can be used as the future flexible display technology and a type of implantable LED biosensor for a therapy tool. The final part of this seminar will introduce a highly efficient and printable BaTiO3 thin film nanogenerator on plastic substrates. Energy harvesting technologies converting external biomechanical energy sources (such as heart beat, blood flow, muscle stretching and animal movements) into electrical energy is recently a highly demanding issue in the materials science community. Herein, we describe procedure suitable for generating and printing a lead-free microstructured BaTiO3 thin film nanogenerator on plastic substrates to overcome limitations appeared in conventional flexible ferroelectric devices. Flexible BaTiO3 thin film nanogenerator was fabricated and the piezoelectric properties and mechanically stability of ferroelectric devices were characterized. From the results, we demonstrate the highly efficient and stable performance of BaTiO3 thin film nanogenerator.
Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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2009.11a
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pp.114-114
/
2009
ZnO has received considerable attention due to its potential applicability to optoelectronic devices such as ultraviolet-light emitting diodes (UVLEDs) and laser diodes (LDs). As well known, however, polar ZnO with the growth direction along the c-axis has spontaneous and piezoelectric polarizations that will result in decreased quantum efficiency. Recently, nonpolar ZnO has been studied to avoid such a polarization effect. In order to realize applications of nonpoar ZnO-based films to LEDs, growth of high quality alloys for quantum well structures is one of the important tasks that should be solved. $Mg_xZn_{1-x}O$ and $Cd_xZn_{1-x}O$ is ones of most promising alloys for this application because the alloys of ZnO with MgO and CdO provide a wide range of band-gap engineering spanning from 2.4 to 7.8 eV. In this study, we investigated on $Mg_xZn_{1-x}O$ films grown with various Mg/Zn flux ratios The films were grown on R-plane sapphire substrates by plasma-assisted molecular beam epitaxy (PAMBE). we investigated on $Mg_xZn_{1-x}O$ films grown with various Mg/Zn flux ratios. The films were grown on R-plane sapphire substrates by plasma-assisted molecular beam epitaxy (PAMBE). With the relatively low Mg/Zn flux ratios, a typical striated anisotropic surface morphology which was generally observed from the nonpolar (11-20) ZnO film on r-plane sapphire substrates. By increasing the Mg/Zn flux ratio, however, additional islands were appeared on the surface and finally the surface morphology was entirely changed, which was generally observed for the (0001) polar ZnO films by losing the striated morphology. Investigations by X-ray $\Theta-2{\Theta}$ diffraction revealed that (0002) and (10-11) ZnO planes are appeared in $Mg_xZn_{1-x}O$ films by increasing the Mg/Zn flux ratio. Further detailed investigation by transmission electron microscopy (TEM) and photoluminescence (PL) will be discussed.
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