• Proceedings of the IEEK Conference
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• 2001.06a
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• pp.177-180
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• 2001

A decoupled, wide-band, perfectly magnetically conductor(PMC)-backed air waveguide antenna is designed and constructed for the use of the continuous electromagnetic wave ground penetrating radar in the frequency range from 200MHz to 600MHz. Two planar dipoles are located inside air slab covered by PMC on the top side and separated by an air gap from the bottom ground interface. The coupling between the transmitting and the receiving dipoles is calculated by less than -60dB over the frequency from 200MHz to 600MHz.

• Proceedings of the Materials Research Society of Korea Conference
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• 2012.05a
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• pp.59.2-59.2
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• 2012

Polymer solar cells utilize bulk heterojunction (BHJ) type photo-active layer in which the electron donating polymer and electron accepting $C_{60}$ derivatives are blended. We found there is significant charge recombination at the interface between the BHJ active layer and electrode. The charge recombination at the interface was effectively reduced by inserting wide band gap inorganic interfacial layer, which resulted in efficiency and stability enhancement of BHJ polymer solar cell.

• 한국정보디스플레이학회:학술대회논문집
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• 2007.08a
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• pp.137-140
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• 2007

We prepared ambipolar organic field-effect transistors and observed blue emission when both hole and electron accumulation layers were in the channel. We found that the reduction of carrier traps and controlling devices' preparation and measurement conditions were crucial for ambipolar operation.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.04c
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• pp.58-61
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• 2008

$TiO_2$ is a wide band-gap semiconductor (3.4 eV) and can only absorb about 5% of sun light in the ultraviolet light region, which largely limits its practical applications because of the lower utility of sun light and quantum yield. In order to move the absorption edge of $TiO_2$ fims to visible spectrum range, we have made the impurity level within a band-gap of $TiO_2$ thin film by introduction of oxygen vacancy. Oxygen-defected $TiO_2$ thin film have prepared by reactive sputtering with the partial pressure of $Ar:O_2=10:90{\sim}99.33:0.66$ ratio. As a result, we could have the impurity level of about 2.75 eV on condition that oxygen partial pressure is below 7%.

• Bulletin of the Korean Chemical Society
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• v.32 no.7
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• pp.2207-2211
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• 2011

Colloidal cadmium telluride (CdTe) quantum dots (QDs) and their nanoparticles have been synthesized by one pot sonochemical reactions under multibubble sonoluminescence (MBSL) conditions, which are quite mild and facile compared to other typical high temperature solution-based methods. For a typical reaction, $CdCl_2$ and tellurium powder with hexadecylamine and trioctylphosphine/trioctylphosphineoxide (TOP/TOPO) as a dispersant were sonicated in toluene solvent at 20 KHz and a power of 220W for 5-40 min at 60 $^{\circ}C$. The sizes of CdTe particles, in a very wide size range from 2 nm-30 ${\mu}m$, were controllable by varying the sonicating and thermal heating conditions. The prepared CdTe QDs show different colors from pale yellow to dark brown and corresponding photoluminescence properties due mainly to the quantum confinement effect. The CdTe nanoparticles of about 20 nm in average were found to have band gap of 1.53 eV, which is the most optimally matched band gap to solar spectrum.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.06a
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• pp.393-394
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• 2008

$TiO_2$ is a wide band-gap semiconductor (3.4 eV) and can only absorb about 5% of sun light in the ultraviolet light region, which largely limits its practical applications because of the lower utility of sun light and quantum yield. In order to move the absorption edge of $TiO_2$ films to visible spectrum range, we have made the impurity level within a band-gap of $TiO_2$ thin film by introduction of oxygen vacancy. Oxygen-defected $TiO_2$ thin film have prepared by reactive sputtering with the partial pressure of Ar:$O_2$=10:90~99.33:0.66 ratio. As a result, we could have the impurity level of about 2.75 eV on condition that oxygen partial pressure is below 7%.

• Proceedings of the KIEE Conference
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• 2006.07c
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• pp.1382-1383
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• 2006

ZnO 박막은 wide band gap(Eg=3.37eV)의 derect band gap을 갖고 있기 때문에 여러 소자로의 응용가능성에 큰 기대를 하고 있는 물질이다. 본 논문에서는 소자 제조과정에서 요구되는 ZnO 박막의 식각변수에 따른 식각율과 식각특성에 관하여 연구하였으며 Inductively coupled plasma(ICP)를 사용하여 $BCl_3$/Ar 가스를 혼합하여 식각을 하였다. $BCl_3$/Ar=8/2 플라즈마에서 화학적 식각의 도움을 받아 ZnO 박막의 식각률은 1724 ${\AA}/min$ 로 최고를 보였으며 이때의 공정 조건은 800 W 의 RF power, 400 W 의 bias power, 1 Pa 의 공정 압력이었다. 식각시에 플라즈마 내부의 이온 거동상태를 측정하기위해 quadrupolemass spectrometer(QMS)를 사용하여 분석하였고 식각후 ZnO 박막의 식각률은 surface profiler(KLA fencer, ${\alpha}$-step 500)을 이용하여 측정하고 ZnO 박막과 B, Cl 라디칼과의 표면 반응 상태를 고찰하기 위하여 식각된 ZnO 박막의 표면을 X-ray photoelectron spectroscopy(XPS)로 분석하였다. XPS를 통하여 ZnO 박막과 Cl 라디칼과 반응을 하여 식각된다는 것과 낮은 휘발성으로 인하여 Ar 이온에 의한 스퍼터링 효과의 도움에 의해서 식각이 진행됨을 확인하였다.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2006.06a
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• pp.398-399
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• 2006

$TiO_2$ is a wide band-gap semiconductor (3.4 eV) and can only absorb about 5% of sun light. in the ultraviolet light region, which largely limits its practical applications because of the lower utility of sun light and quantum yield. In order to move the absorption edge of $TiO_2$ films to visible spectrum range, we have made the impurity level within a band-gap of $TiO_2$ thin film by introduction of oxygen vacancy. Oxygen-defected $TiO_2$ thin film have prepared by reactive sputtering with the partial pressure of Ar:$O_2$=10:90~99.33:0.66 ratio. As a result, we could have the impurity level of about 2.75 eV on condition that oxygen partial pressure is below 7%.

• Journal of the Korean institute of surface engineering
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• v.34 no.5
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• pp.510-515
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• 2001

It was first time that low frequency R.F. derived plasma enhanced MOCVD with frimethylborate precursor was used to fabricate a new ternary compound $BO_{x}$ $N_{y}$ . The formation of BON molecule was resulted from nitrogen nitrifying B-O, and forming the angular molecule structure proved by XPS and FT-IR results. The relationship between hardness and film thickness was studied. An thickness-independent hardness was fond about 10 GPa. The empirical calculation of band-gap and UV test result showed that our deposited $BO_{x}$ $N_{y}$ thin film was semiconductor material with 3.4eV of wide band gap. The electrical conductivity, $4.8$\times$10^{-2}$ /($\Omega$.cm)$^{-1}$ also confirmed that $BO_{x}$ $N_{y}$ has a semiconductor property. The roughness detected from the as-grown films showed that there was no serious bombarding effect due to anion in the plasma occurring in the RF frequency derived plasma.

• KSII Transactions on Internet and Information Systems (TIIS)
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• v.11 no.12
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• pp.5745-5758
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• 2017

In this paper, we develop a simple but very effective 4 by 4 Multiple-Input Multiple-Output (MIMO) antenna system for mobile phones consisting of different types of antennas to achieve low correlation property at the frequency ranges of 1710 to 2170 MHz, which covers wide LTE service bands, from band 1 to band 4. The proposed antenna system consists of two pair of antennas. Each pair consists of a planar inverted-F antenna (PIFA) and a coupling antenna which has the property of the loop. The use of two different antenna types of IFA and a coupling achieves high isolation. Proposed antenna system occupies relatively small area and positions at the four corners of a printed circuit board. The gap between the two antennas is 4 mm, in order to realize the good isolation performance. To evaluate the performance of our proposed antenna system, we perform various experiments. The proposed antenna shows a wide operating bandwidth greater than 460 MHz with isolation between the feeding ports higher than 17.5-dB. It also shows that the proposed antenna has low Envelop Correlation Coefficient (ECC) values smaller than 0.08 over the all desired frequency tuning ranges.