• 전기학회논문지P
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• 제65권2호
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• pp.142-150
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• 2016

This paper developed new manufacture process technology of slim type flexible flat lighting product used lower power white LED. Flexible flat lighting is applied to letter sign lighting, traffic lighting, interior wall lighting, flat lighting, aquarium back lighting, wreath light etc. Main manufacture process technology were developed drawing software for electronics circuit, inkjet electronic circuit pattern and inkjet white ink coating. For pattern printing it was utilized for piezoelectonic inkjet head printing technology. Also high vacuum pressure laminating technology was waterproofing for LED flat lighting protection. Hence, form process technology we were manufactured for flexible flat lighting product of the power 12 W, input voltage 48 V and plane size $480{\times}480mm$. It acquired a these validity from experiment results.

• 소성∙가공
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• 제24권2호
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• pp.83-88
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• 2015

For chromaticity correction, it is necessary to dispense high viscosity phosphor slurry since it greatly affects the performance of white LEDs. However, it is quite difficult to dispense high viscosity fluorescent materials. In the current study, micro-discharge electrostatic printing has been used for dispensing various high viscosity phosphor slurries. We have achieved dispersions of up to 50 µg using drop on demand (DOD) discharge experiments. The experiments were conducted with different combinations of process variables such as applied voltage, pneumatic pressure, and frequency.

• 반도체디스플레이기술학회지
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• 제6권3호
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• pp.47-53
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• 2007

Ultra thin Si p-n junctions shallower than $300{\AA}$ were fabricated and biased to the avalanche regime. The ultra thin junctions were fabricated to be parallel to the surface and exposed to the surface without $SiO_2$ layer. Those junctions emitted white light and electrons when junctions were biased in the avalanche breakdown regime. Therefore, we could observe the avalanche breakdown region visually. We could also observe the influence of electric field to the current flow visually by observing the white light which correspond to the avalanche breakdown region. Arrayed diodes emit light and electrons uniformly at the diode area. But, the reverse leakage current were larger than those of ordinary diodes, and the breakdown voltage were less than 10V.

• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2009년도 9th International Meeting on Information Display
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• pp.865-867
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• 2009

In this paper, we describe the fabrication of nano-scale ink particles with narrow size distribution to offer high optical density in electrophoretic display applications. Charged white ($TiO_2$ and polyester) and black (carbon black and polyester) nano size ink particles in size range of 200 ~ 700nm were made successively using modified non-aqueous base emulsion process. The EPD showed white reflectance of 58% and saturation voltage of ${\pm}10V$.

• 대한전기학회논문지:전기물성ㆍ응용부문C
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• 제53권2호
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• pp.91-96
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• 2004

In darkroom condition, it was observed that a white picture pattern lasted several minutes leaves a recognizable trace in subsequent black background picture. Although this is not a serious problem for the most current public display or home TV applications, the image sticking should be minimized for future high quality multimedia display applications. In order to characterize this picture memory effect having relatively long time scale, spatially resolved luminance measurement and light waveform measurement have been performed. Pixels located at the outer boundary of white pattern previously displayed shows highest luminance. These cells also shows fastest ignition at the ramp up reset sequence. The luminance and ignition voltage differences between boundary cells and the other cells are increased with display duration and number of sustain-pulse. It is speculated that image sticking observed at the boundary cell is originated from the transport of charged particles and re-deposition of reactive species such as Mg, O provided from strong sustain discharge region.

• 전기학회논문지P
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• 제55권3호
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• pp.146-152
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• 2006

In order to analyze the characteristics of series arcs that could happen in poor connections of electrical facilities, we made an apparatus which is similar to actual situation. series arcs are generated between copper and copper, copper and bronze, copper and brass, bronze and bronze, and then oxidation growth and voltage waveform were measured. A very small vibration with constant movement is needed to grow oxidation initially, whereas oxidation growth proceeded without a vibration after a certain amount of time. At first, blue white flame was generated initially between copper and copper, and then yellow flame was generated. In case of contact between copper and copper, the length of oxidation growth was about 7.1[mm] in 90[min]. In case of contact between copper and brass, the length of oxidation growth was about 4.3[mm] in 90[min], When bronze is contacted with copper, the lengths of oxidation growth were about 1.4[mm] in 20[min] and 2.7[mm] in 40[min] respectively, and no more oxidation growth was shown after that. In case of contact between brass and brass, the length of oxidation growth was about 1.2[mm] in 90[min], so it was the smallest compared to other cases. When copper is contacted with copper, the current through the load was about 1.6[A] and the power dissipation increased from 19[W] to 31[W]. In case of oxidation growth between copper and brass, the voltage changed from 8.4[V] to 11[V]. However, the voltage drop and the power dissipation between copper and brass were small compared to oxidation growth between copper and copper. When series arcs were generated between bronze and copper, a peak was shown at the beginning of voltage increase, and 40[min] later, oxidation material was not grown any longer. When oxidation growth occurred, voltage waveform showed irregular waveforms with tiny ripples.

• 대한치과보철학회지
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• 제44권5호
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• pp.549-560
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• 2006

Purpose : This experiment examined the effects of anodization on commercially pure titanium implant fixtures. Material & methods : The implant fixtures were anodized at three different voltage levels, producing three different levels of oxidation on the surface of the fixure. Implant were divided into four groups according to the level of oxidation. Group 1 consist of the control group of machined surface implants, Group 2 implants were treated by anodizing to 100 voltage, Group 3 implants were treated by anodizing oxidation to 200 voltage Group 4 implants were treated by anodizing oxidation to 350 voltage. Surface morphology was observed by Scanning Electron Microscope(SEM) and the surface roughness was measured using NanoScan $E-1000^{\circledR}$. Implantation of the fixtures were performed using New Zealand white rabbits. $Periotest^{\circledR}$ value(PTV) resonance frequency analysis(RFA), and removal torque were measured in 0, 2, 4, 8, 12 weeks after implantation. Results : The results of the study were as follows: 1. Values for the measured surface roughness indicate statistically significant differences in Ra, Rq, and Rt values among group 1, 2, 3, and 4 at the top portion of the thread,(p<0.05) while values at the base of the threads indicated no significant difference in these values. 2. A direct correlation between the firming voltage, and surface roughness and irregularities were observed using scanning electron microscope. 3. No statistically significant differences were found between test groups regarding $Periotest^{\circledR}$ values. 4. Analysis of the data produced by RFA, significant differences were found between group 1 and group 4 at 12 weeks after implantation.(p<0.05) Conclusions : In conclusion, no significant differences could be found among test groups up to a certain level of forming voltage threshold, beyond this firming voltage threshold, statistically significant differences occurred as the surface area of the oxide layer increased with the increase in surface porosity, resulting in enhanced bone response and osseointegration.

• 한국정보통신학회논문지
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• 제22권1호
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• pp.91-99
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• 2018

본 논문에서는 텔레비전 유휴 주파수 대역(470 MHz ~ 698 MHz)에서 적용 가능한 우수한 수신감도와 높은 선형 특성을 동시에 확보할 수 있는 RF 수신기 구조와 회로 구조를 제안하였다. 제안하는 RF 수신기는 $0.13-{\mu}m$ CMOS 공정으로 설계되었으며, 저잡음 증폭기, 고주파 대역 통과 필터, 고주파 증폭기, 수동 하향 주파수 변환기, 그리고 기저 대역 통과 필터로 구성되어 있다. 높은 수신감도를 얻기 위해 저잡음 증폭기와 고주파 증폭기를 적용하였으며, 인접 채널에 위치하는 인터피어러를 고주파 대역에서 필터링하기 위해 MOS 스위치와 커패시터를 이용한 고주파 대역 통과 필터와 수동 하향 주파수 변환기를 동시에 사용하였다. 제안된 4차 저역통과 필터는 공통-게이트 증폭기에 기존의 바이쿼드 셀을 적용하여 -24dB/oct 필터링 특성을 얻었다. 모의 실험결과로부터 설계된 RF 수신기는 56 dB의 전압이득, 2 dB 이하의 잡음 지수, -2.3 dBm의 IIP3 (out-of-channel) 성능을 제공하며, 1.5 V 전원으로부터 37 mA를 소모 한다.

• 한국재료학회지
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• 제26권3호
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• pp.117-122
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• 2016

White organic light-emitting diodes with a structure of indium-tin-oxide [ITO]/N,N-diphenyl-N,N-bis-[4-(phenylm-tolvlamino)-phenyl]-biphenyl-4,4-diamine [DNTPD]/[2,3-f:2, 2-h]quinoxaline-2,3,6,7,10,11-hexacarbonitrile [HATCN]/1,1-bis(di-4-poly-aminophenyl) cyclo -hexane [TAPC]/emission layers doped with three color dopants/4,7-diphenyl-1,10-phenanthroline [Bphen]/$Cs_2CO_3$/Al were fabricated and evaluated. In the emission layer [EML], N,N-dicarbazolyl-3,5-benzene [mCP] was used as a single host and bis(2-phenyl quinolinato)-acetylacetonate iridium(III) [Ir(pq)2acac]/fac-tris(2-phenylpyridinato) iridium(III) $[Ir(ppy)_3]$/iridium(III) bis[(4,6-di-fluoropheny)-pyridinato-N,C2] picolinate [FIrpic] were used as red/green/blue dopants, respectively. The fabricated devices were divided into five types (D1, D2, D3, D4, D5) according to the structure of the emission layer. The electroluminescence spectra showed three peak emissions at the wavelengths of blue (472~473 nm), green (495~500 nm), and red (589~595 nm). Among the fabricated devices, the device of D1 doped in a mixed fashion with a single emission layer showed the highest values of luminance and quantum efficiency at the given voltage. However, the emission color of D1 was not pure white but orange, with Commission Internationale de L'Eclairage [CIE] coordinates of (x = 0.41~0.45, y = 0.41) depending on the applied voltages. On the other hand, device D5, with a double emission layer of $mCP:[Ir(pq)_2acac(3%)+Ir(ppy)_3(0.5%)]$/mCP:[FIrpic(10%)], showed a nearly pure white color with CIE coordinates of (x = 0.34~0.35, y = 0.35~0.37) under applied voltage in the range of 6~10 V. The luminance and quantum efficiency of D5 were $17,160cd/m^2$ and 3.8% at 10 V, respectively.

• 대한전기학회:학술대회논문집
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• 대한전기학회 1999년도 하계학술대회 논문집 F
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• pp.2594-2596
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• 1999

Recently, white good market has interest with inverter product, which has merit to on/off type with respect to energy saving and noise. But, inverter product's cost is rising, because of adding inverter circuit component. To reduce cost, inverter gate drive trend is using HVIC which needs only single voltage. Also using HVIC, designer can compact PCB'size. This paper shows application technique and key point of designing HVIC