• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2007년도 7th International Meeting on Information Display 제7권2호
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• pp.1437-1439
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• 2007

We fabricated white organic light emitting device (WOLED) with the layered fluorescent blue material and phosphorescent green/red dye-doped materials. Addition of the non-doped phosphorescent host material between the fluorescent and phosphorescent light emitting layers provided the result of broadband white spectrum, with improved balance, higher efficiency, and lower power consumption. In our devices, there was no need of exciton-blocking layer between the each emission layer for the further confinement of the diffusion of excitons.

• 한국표면공학회지
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• 제48권3호
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• pp.115-120
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• 2015

We studied white tandem organic light-emitting diodes using red and blue fluorescent materials. White 2 units tandem OLEDs were fabricated using $Alq_3$:Rubrene (3 vol.% 5 nm) and SH-1 : BD-2 (3 vol.% 25 nm) as emitting layer (EML). The device with $Alq_3$ : Rubrene (3 vol.% 5 nm) / SH-1 : BD-2 (3 vol.% 25 nm) showed yellowish white emission with a Commission Internationale de l'Eclairage (CIE) coordinates of (0.442, 0.473) at $1,000cd/m^2$, and variation of CIE coordinates was low with ($0.44{\pm}0.002$, $0.472{\pm}0.001$) from 500 to $3,000cd/m^2$. White 3 units tandem OLEDs were fabricated by additory stacking the blue or white layer as EML. CIE coordinates of 3 units tandem OLEDs with stacked blue and white layer was low variation of ($0.293{\pm}0.008$, $0.36{\pm}0.005$) and ($0.412{\pm}0.002$, $0.423{\pm}0.001$) from 500 to $3,000cd/m^2$, respectively. Our findings suggest that stacked OLED was possible to controlling CIE coordinates and producing excellent color stability.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2001년도 하계학술대회 논문집
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• pp.351-354
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• 2001

We fabricated organic electroluminescent(EL) devices with mixed emitting layer of poly (N- vinylcarbazole) ( PVK) , 2,5-bis (5-tert-butyl -2- benzoxaBoly) thiophene ( BBOT) , N,N-diphenyl-N,N- (3-methyphenyl) -1,1-biphenyl-4, 4-thiamine(TPD) and poly(3-hexylthiophene) (P3HT) deposited by LB(Langumuir-Boldgett) method. From the AFM(atomic force microscope) images, the monolayer containing 30% of AA(arachidic acid) showed a roughness value of 28$\AA$. In the voltage-current characteristics of ITO/Emitting layer/BBOT/LiF/A1 devices, current density much smaller than that of the spin-coated devices having a same thickness.

• 한국전기전자재료학회논문지
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• 제23권2호
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• pp.124-127
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• 2010

We have fabricated organic white light emitting device by two colors from yellow fluorescence material (5,6,11,12)-Tetraphenylnaphthacene(Rubrene) and blue phosphorescent material (iridum-bis(4,6-difluorophenylpyridinato-N,C2)-picolinate(FIrpic). The threshold voltage is 5.3 V, and the brightness reaches 1000 cd/$m^2$ at 11 V, 14.5 mA/$m^2$. The color of the light corresponds to a CIE coordinate of (0.30, 0.38). The highest efficiency of the device can reach 9.5 cd/A or 5.5 lm/W at 6 V, 0.1 mA/$m^2$.

• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2009년도 9th International Meeting on Information Display
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• pp.1055-1055
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• 2009

The mobility of charge carriers has been investigated in the pristine and phosphorescent materials doped host materials using time-of-flight photoconductivity technique. The field and temperature dependences of the mobility were analyzed with the Gaussian disorder model. Based on these results, we optimized white organic light emitting diodes (WOLEDs) consisting of multi-emitting layers doped with phosphorescent and fluorescent dopants. Especially, we studied the effect of each emitter position and an interlayer on the device characteristics of WOLEDs.

• 공업화학
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• 제26권3호
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• pp.247-250
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• 2015

유기 발광 다이오드(OLED)는 학문 및 산업 분야에서 많은 관심을 받아왔다. OLED는 기존에 사용되고 있는 광원들과는 달리 면 발광, 친환경적인 에너지 사용, 대면적, 초경량, 그리고 초박형 등의 차별화된 특징을 가지고 있기 때문에 최근 조명 시장에서 많은 관심을 받고 있다. 게다가, OLED 조명은 LED 형광등을 대체할 수 있는 차세대 조명으로써 주목되고 있다. 본 논문에서는 white OLED (WOLED)에 적용되고 있는 대표적인 인광 발광 재료들을 소개하며, 특히 yellow, orange, red 인광 물질들의 화학구조와 소자효율을 정리하였다. 이러한 선행연구의 물질들을 이해하고 인광 물질들을 체계적으로 분류함으로써 새로운 발광 재료를 연구하고 개발함에 있어서 많은 도움이 되리라고 생각한다.

• 한국재료학회지
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• 제17권4호
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• pp.198-202
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• 2007

A new organic light emitting device(OLED) with two peak wavelength(blue and yellow) emission was fabricated using the selective doping in a single fluorescent host , and its electrical and optical characteristics were investigated. The fabricated device showed the luminance and efficiency of 1600 $Cd/m^2$ and 2.4 Im/W under the applied voltage of 10V, respectively. And its electroluminescent spectra had two peak wavelengths of 470nm and 560nm emitting bluish white light. The OLED with dual wavelength emission in this experiment is likely to be developed as a white OLED with simpler fluorescent system than conventional devices.

• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2002년도 International Meeting on Information Display
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• pp.780-783
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• 2002

We report very efficient white OLEDs consisting of a blue-emitting 4,4'bis[N-(1-napthyl)-N-phenyl-amino]-biphenyl (${\alpha}$-NPD), a hole-blocking layer of 2,9-dimethyl-4, 7-diphenyl-1, 10-phenanthroline (BCP) doped with red fluorescent dye of 4-dicyanomethylene-2-methyl-6-[2-(2,3,6,7-tetrahydro- 1H, 5H-benzo[i,j]quinolizin-8-yl) vinyl]-4H-pyran) (DCM2), and green-emitting tris(8-hydroxyquinoline) aluminum ($Alq_3$). The device with the structure of ITO/${\alpha}$-NPD (50 nm)/BCP:DCM2 (0.8 %, 4 nm)/$Alq_3$ (50 nm)/LiF (0.5 nm)/Al shows a white emission with the CIE coordinates (0.329, 0.333). The maximum luminance of 20,800 cd/$m^2$ is obtained at 15.4 V. The power efficiency is 2.6lm/W and the external quantum efficiency is 2.1 % at a luminance of 100 cd/$m^2$ at the bias voltage of 6 V.

• 한국전기전자재료학회논문지
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• 제13권5호
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• pp.437-443
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• 2000

In this study several lanthanide complexes such as Eu(TTA)$_3$(Phen), Tb(ACAC)$_3$-(Cl-Phen) were synthesized and the white-light electroluminescence(EL) characteristics of their thin films were investigated where the devices having structures of anode/TPD/Tb(ACAC)$_3$(Cl-Phen)/Eu(TTA)$_3$(Phen)/Alq$_3$or Bebq$_2$/cathode and the low work function metal alloy such as Li:Al was used as the electron injecting electrode(cathode). Device structure of glass substrate/ITO/TPD(30nm)/Tb(ACAC)$_3$(Phen)(30nm)/Eu(TTA)$_3$(Phen)(6nm)/DCM doped Alq$_3$(10nm)/Alq$_3$(20nm)/Li:Al(100nm) was also fabricated and their EL characteristics were investigated where Eu(TTA)$_3$(Phen) and DCM doped Alq$_3$were used as red light-emitting materials. It was found that the turn-on voltage of the device with non-doped Alq$_3$was lower than that of the devices with doped Alq$_3$and the blue and red light emission peaks due to TPD and Eu(TTA)$_3$(Phen) with non-doped Alq$_3$were lower than those with DCM doped Alq$_3$Details on the white-light-emitting characteristics of these device structures were explained by the energy and diagrams of various materials used in these structure where the energy levels of new materials such as ionization potential(IP) and electron affinity(EA) were measured by cyclic voltametric method.

• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2008년도 International Meeting on Information Display
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• pp.1520-1521
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• 2008

There are several ways to demonstrate white organic light emitting diodes (OLEDs) for displays and solid state lighting applications. Among these approaches are the stacked three primary or two complementary colors light-emitting layers, multiple-doped emissive layer, and excimer and exciplex emission [1-10]. We report on white phosphorescent excimer devices by using two light emitting materials based on platinum complexes. These devices showed a peak EQE of 15.7%, with an EQE of 14.5% (17 lm/W) at $500\;cd/m^2$, and a noticeable improvement in both the CIE coordinates (0.381, 0.401) and CRI (81). Devices with the structure ITO/PEDOT:PSS/TCTA (30 nm)/26 mCPy: 12% FPt (10 nm) /26 mCPy: 2% Pt-4 (15 nm)/BCP (40 nm)/CsF/Al [device 1], ITO/PEDOT:PSS/TCTA (30 nm)/26 mCPy: 2% Pt-4 (15 nm)/26 mCPy: 12% FPt (10 nm)/BCP (40 nm)/CsF/Al [device 2], and ITO/PEDOT:PSS/TCTA (30 nm)/26 mCPy: 2% Pt-4: 12% FPt (25 nm)/BCP (40 nm)/CsF/Al [device 3] were fabricated. In these cases, the emissive layer was either the double-layer of 26 mCPy:12% FPt and 15 nm 26 mCPy: 2% Pt-4, or the single layer of 26mCPy with simultaneous doping of Pt-4 and FPt. Device characterization indicates that the CIE coordinates/CRI of device 2 were (0.341, 0.394)/75, (0.295, 0.365)/70 at 5 V and 7 V, respectively. Significant change in EL spectra with the drive voltage was observed for device 2 indicating a shift in the carrier recombination zone, while relatively stable EL spectra was observed for device 1. This indicates a better charge trapping in Pt-4 doped layers [10]. On the other hand, device 3 having a single light-emitting layer (doped simultaneously) emitted a board spectrum combining emission from the Pt-4 monomer and FPt excimer. Moreover, excellent color stability independent of the drive voltage was observed in this case. The CIE coordinates/CRI at 4 V ($40\;cd/m^2$) and 7 V ($7100\;cd/m^2$) were (0.441, 0.421)/83 and (0.440, 0.427)/81, respectively. A balance in the EL spectra can be further obtained by lowering the doping ratio of FPt. In this regard, devices with FPt concentration of 8% (denoted as device 4) were fabricated and characterized. A shift in the CIE coordinates of device 4 from (0.441, 0.421) to (0.382, 0.401) was observed due to an increase in the emission intensity ratio of Pt-4 monomer to FPt excimer. It is worth noting that the CRI values remained above 80 for such device structure. Moreover, a noticeable stability in the EL spectra with respect to changing bias voltage was measured indicating a uniform region for exciton formation. A summary of device characteristics for all cases discussed above is shown in table 1. The forward light output in each case is approximately $500\;cd/m^2$. Other parameters listed are driving voltage (Bias), current density (J), external quantum efficiency (EQE), power efficiency (P.E.), luminous efficiency (cd/A), and CIE coordinates. To conclude, a highly efficient white phosphorescent excimer-based OLEDs made with two light-emitting platinum complexes and having a simple structure showed improved EL characteristics and color properties. The EQE of these devices at $500\;cd/m^2$ is 14.5% with a corresponding power efficiency of 17 lm/W, CIE coordinates of (0.382, 0.401), and CRI of 81.