• Proceedings of the PSK Conference
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• 2003.10b
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• pp.234.2-234.2
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• 2003

Recently, the need for ultra-fine particles, especially nano-sized particles has increased in the fields preparing raw powders such as pharmaceutical additive and high value added products in the Nano-Technology processes. Therefore, the research in ultra-fine grinding is very important, especially, in nanometer grinding. In the previous paper, a series of wet grinding experiments using grinding aids using a stirred ball mill have been performed on grinding rate constant based on grinding kinetics. (omitted)

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.5 no.4
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• pp.400-407
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• 1995

A Abstract Buried contact solar cell is a very high efficiency silicon solar cell having over 19 % conversion effciency. In this paper, we investigated the process and characteristic of buried c contact solar cell. Manufacturing pro않sses of buried contact solar cell consist of three high temperature processes, one high vacuum deposition process, one laser application process and other wet chemical processes.

• Journal of Institute of Convergence Technology
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• v.2 no.1
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• pp.7-12
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• 2012

Spent fuels are discharged from nuclear reactors as a result of power generations. The spent fuels would be considered as a useful resources because the main constituent is uranium and some other actinides are included in them. In order to utilize the resources chemical processes should be developed to treat the spent fuels and obtain uranium and other actinides to be fueled in a fast reactor. The technologies are categorized into wet and dry processes. In this study, the current status of such technologies is summarized to give a insight and a deep understanding on nuclear fuel cycles.

• Journal of Korean Society of Occupational and Environmental Hygiene
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• v.29 no.3
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• pp.310-321
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• 2019

Objectives: The purpose of this study was to investigate types and characteristics of chemical substances used in LCD(Liquid crystal display) panel manufacturing process. Methods: The LCD panel manufacturing process is divided into the fabrication(fab) process and module process. The use of chemical substances by process was investigated at four fab processes and two module processes at two domestic TFT-LCD(Thin film transistor-Liquid crystal display) panel manufacturing sites. Results: LCD panels are manufactured through various unit processes such as sputtering, chemical vapor deposition(CVD), etching, and photolithography, and a range of chemicals are used in each process. Metal target materials including copper, aluminum, and indium tin oxide are used in the sputtering process, and gaseous materials such as phosphine, silane, and chlorine are used in CVD and dry etching processes. Inorganic acids such as hydrofluoric acid, nitric acid and sulfuric acid are used in wet etching process, and photoresist and developer are used in photolithography process. Chemical substances for the alignment of liquid crystal, such as polyimides, liquid crystals, and sealants are used in a liquid crystal process. Adhesives and hardeners for adhesion of driver IC and printed circuit board(PCB) to the LCD panel are used in the module process. Conclusions: LCD panels are produced through dozens of unit processes using various types of chemical substances in clean room facilities. Hazardous substances such as organic solvents, reactive gases, irritants, and toxic substances are used in the manufacturing processes, but periodic workplace monitoring applies only to certain chemical substances by law. Therefore, efforts should be made to minimize worker exposure to chemical substances used in LCD panel manufacturing process.

• Clean Technology
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• v.24 no.4
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• pp.269-274
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• 2018

In this study, Life Cycle Assessment (LCA) of wet tissue manufacturing process was performed. The wet tissue manufacturing process consists of preparation of wetting agent (chemical liquid), impregnation of nonwoven fabric into wetting agent and primary and secondary packaging. Data and information were collected on the input and output of the actual process from a certain company and the database of the Korea Ministry of Environment and some foreign countries (when Korean unavailable) were employed to connect the upper and the lower process flow. Based on the above and the potential environmental impacts of the wet tissue manufacturing process were calculated. As a result of the characterization, Ozone Layer Depletion (OD) is 3.46.E-06 kg $CFC_{11}$, Acidification (AD) is 5.11.E-01 kg $SO_2$, Abiotic Resource Depletion (ARD) is $3.52.E+00\;1yr^{-1}$, Global Warming (GW) is 1.04.E+02 kg $CO_2$, Eutrophication (EUT) is 2.31.E-02 kg ${PO_4}^{3-}$, Photochemical Oxide Creation (POC) was 2.22.E-02 kg $C_2H_4$, Human Toxicity (HT) was 1.55.E+00 kg 1,4 DCB and Terrestrial Ecotoxicity (ET) was 5.82.E-04 kg 1,4 DCB. In order to reduce the environmental impact of the manufacturing process, it is necessary to improve the overall process as other general cases and change the raw materials including packaging materials with less environmental impact. Conclusively, the energy consumed in the manufacturing process has emerged as a major issue, and this needs to be reconsidered other options such as alternative energy. Therefore, it is recommended that a process system should be redesigned to improve energy efficiency and to change to an energy source with lower environmental impact. Due to the nature of LCA, the final results of this study can be varied to some extent depending on the type of LCI DB employed and may not represent of all wet tissue manufacturing processes in the current industry.

• Proceedings of the Korean Society of Soil and Groundwater Environment Conference
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• 2004.09a
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• pp.450-452
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• 2004

Using factor analysis and bivariate comparisons of major components in ground water, three geochemical processes were identified as controlling factors of ground water chemistry; 1) natural mineralization by water rock interactions, 2) effect of seawater which includes salinization by seawater near seashores and deposition of sea salt, and 3) nitrate contamination by N fertilization. Contribution of rainfall was also estimated from the measured composition of wet deposition. The geochemical processes were separated using total alkalinity as an indicator for natural mineralization, Cl for effect of seawater, and nitrate for N fertilization. Relatively high correlation of major components with nitrate suggests that nitrification of nitrogenous fertilizers significantly affects ground water chemistry. Total cations derived from nitrate sources have good linearity for nitrate in equivalent basis with a slope of 1.8, which is a mean of proton production coefficients in nitrification of two major compounds in nitrogenous fertilizers, ammonium and urea. Contribution of nitrate sources to base cations, Cl, and SO$_4$ in ground water was determined considering maximum contribution of natural mineralization to estimate a threshold of the effect of N fertilization for ground water chemistry, which shows W fertilization has a greatest effect than any other processes in ground water with nitrate concentration greater than 50 mg/L for Ca, Mg, Na and with concentration greater than 30 mg/L for Cl and SO$_4$.

• Journal of Korean Society of Water and Wastewater
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• v.23 no.4
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• pp.417-430
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• 2009

A BNR comprehensive performance evaluation (BNR CPE) system was established employing system-oriented evaluation methodology for biological nutrient removal (BNR) processes based on the CPE techniques developed by U.S. EPA for evaluation of conventional biological processes. The BNR CPE system applied to five domestic BNR plants adopting $A^2/O$ process confirmed that all target plants except the smallest one had not any serious defective performance and process stability was enhanced with increasing plant size. The system also clearly verified relatively poor performances in anoxic reactors without exception mainly due to influent carbon limit rather than functional defect. Consistent good performances were confirmed even during both winter season and wet weather generally known to be difficult to achieve satisfactory removals. Presentation of evaluation results by modified radar chart system simplified and clarified the evaluation and analysis procedures. The BNR CPE system could not only discover readily the causes of present and prospective poor performances but also facilitate the suggestion of their optimization options. Mutual effect and cause-and-effect among operation parameters and unit processes were also found easily using the evaluation system. The system justified that the adverse effect of defective operating parameters could be compensated by other favorable parameters, especially in anaerobic and anoxic reactors as well as during the winter season.

• Journal of IKEEE
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• v.13 no.4
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• pp.23-27
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• 2009

Ohmic contact formation and etching processes for the fabrication of MBE (molecular beam epitaxy) grown GaSb-based p-channel HEMT devices on Si substrate have been studied. Firstly, mesa etching process was established for device isolation, based on both HF-based wet etching and ICP-based dry etching. Ohmic contact process for the source and drain formation was also studied based on Ge/Au/Ni/Au metal stack, which resulted in a contact resistance as low as $0.683\;{\Omega}mm$ with RTA at $320^{\circ}C$ for 60s. Finally, for gate formation of HEMT device, gate recess process was studied based on AZ300 developer and citric acid-based wet etching, in which the latter turned out to have high etching selectivity between GaSb and AlGaSb layers that were used as the cap and the barrier of the device, respectively.

• Journal of the Korean Vacuum Society
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• v.7 no.3
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• pp.169-175
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• 1998

The plasma etching of polysilicon was performed with the HBr/$Cl_2/He-O_2$ gas mixture. The residual layers after photoresist strip were investigated using x-ray photoelectron spectroscopy (XPS) and scanning electron microscopy (SEM). The etch residue was identified as silicon oxide deposited on the top of the patterned polysilicon. In order to clarify the formation mechanism of the etch residue, the effects of various gas mixtures such as $Cl_2/He-O_2$and HBr/$Cl_2$were investigated. We found that the etch residue is well formed in the presence of oxygen, suggesting that the etch residue is caused by the reaction of oxvgen and non-volatile silicon halide compounds. Wet cleaning and dry etch cleaning processes were applied to remove the polysilicon etch residue, which can affect the electrical characteristics and further device processes. XPS results show that the wet cleaning is suitable for the removal of the etch residue.

• Carbon letters
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• v.7 no.3
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• pp.171-179
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• 2006

A carbonaceous sorbent was prepared from rice husk via sulphuric acid treatment. After preparation and washing, the wet carbon with moisture content 85% was used in its wet status in this study due to its higher reactivity towards Cr(VI) than the dry carbon. The interaction of Cr(VI) and the carbon was studied and two processes were investigated in terms of kinetics and equilibrium namely Cr(VI) removal and chromium sorption. Cr(VI) removal and chromium sorption were studied at various initial pH (1.6-7), for initial Cr(VI) concentration (100 mg/l). At equilibrium, maximum Cr(VI) removal occurred at low initial pH (1.6-2) where, Cr(III) was the only available chromium species in solution. Cr(VI) removal, at such low pH, was related to the reduction to Cr(III). Maximum chromium sorption (60.5 mg/g) occurred at initial pH 2.8 and a rise in the final pH was recorded for all initial pH studied. For the kinetic experiments, approximate equilibrium was reached in 60-100 hr. Cr(VI) removal data, at initial pH 1.6-2.4, fit well pseudo first order model but did not fit pseudo second order model. At initial pH 2.6-7, Cr(VI) removal data did not fit, anymore, pseudo first order model, but fit well pseudo second order model instead. The change in the order of Cr(VI) removal process takes place in the pH range 2.4-2.6 under the experimental conditions. Other two models were tested for the kinetics of chromium sorption with the data fitting well pseudo second order model in the whole range of pH. An increase in cation exchange capacity, sorbent acidity and base neutralization capacity was recorded for the carbon sorbent after the interaction with acidified Cr(VI) indicating the oxidation processes on the carbon surface accompanying Cr(VI) reduction.