• Proceedings of the Korean Vacuum Society Conference
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• 2010.02a
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• pp.190-190
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• 2010

Zinc oxide is the most attractive material due to the large direct band gap (3.37 eV), excellent chemical and thermal stability, and large exciton binding energy (60 meV). Recently, ZnO nanorods were used as the high efficient antireflection coating layer of solar cells based on silicon (Si). In this reports, we studied the effects of rapid thermal annealing (RTA) treatment on optical properties of ZnO nanorods. For fabrication of ZnO nanorods, there are many methods such as hydrothermal method, sol-gel method, and metal organic chemical vapor deposition method. Among of them, we used the conventional wet chemical method which is simple and low temperature growth. In order to synthesize the ZnO nanorods, the ZnO films were deposited on Si substrate by RF magnetron sputtering at room temperature and the samples were dipped to aqua solution containing the zinc nitrate and hexamethylentetramines (HMT). The synthesis process was achieved in keeping with temperature of $90-95^{\circ}C$ and under constant stirring. The morphology of ZnO nanorods on glass and Si was characterized by scanning electron microscopy. For the analysis of antireflection performance, the reflectance and transmittance were measured by spectrophotometer. And for analyzing the effects of RTA treatment on ZnO nanorods, crystalline properties were investigated by X-ray diffraction measurements and optical properties was estimated by photoluminescence spectra.

• 한국태양에너지학회:학술대회논문집
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• 2011.04a
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• pp.111-115
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• 2011

Surface Texturing is an essential process for high efficiency in multi-crystalline silicon solar cell. In order to reduce the reflectivity, there are two major methods; proper surface texturing and anti-reflection coating. For texturization, wet chemical etching is a typical method for multi-crystalline silicon. The chemical solution for wet etching consists of HF, $NHO_3$, DI and $CH_3COOH$. We carried out texturization by the change of etching time like 15sec, 30sec, 45sec, 60sec and measured the reflectivity of textured wafers. As making the silicon solar cells, we obtained the conversion efficiency and relationship between texturing condition and solar cell characteristics. The reflectivity from 300nm to 1200nm was the lowest with 15 sec texturing time and 60 sec texturing time showed almost same reflectivity as bare one. The 45 sec texturing time showed the highest conversion efficiency.

• Journal of Korean Society of Water and Wastewater
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• v.32 no.2
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• pp.131-143
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• 2018

Phosphorus (P) is a limited, essential, and irreplaceable nutrient for the biological activity of all the living organisms. Sewage sludge ash (SSA) is one of the most important secondary P resources due to its high P content. The SSA has been intensively investigated to recover P by wet chemicals (acid or alkali). Even though $H_2SO_4$ was mainly used to extract P because of its low cost and accessibility, the formation of $CaSO_4$ (gypsum) hinders its use. Heavy metals in the SSA also cause a significant problem in P recovery since fertilizer needs to meet government standards for human health. Therefore, P recovery process with selective heavy metal removal needs to be developed. In this paper some of the most advanced P recovery processes have been introduced and discussed their technical characteristics. The results showed that further research is needed to identify the chemical mechanisms of P transformation in the recovery process and to increase P recovery efficiency and the yields.

• Journal of Powder Materials
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• v.18 no.3
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• pp.244-249
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• 2011

Spherical nanosized cobalt powder with an average size of 150-400 nm was successfully prepared at room temperature from cobalt sulfate heptahydrate ($CoSO_4{\cdot}7H_2O$). Wet chemical reduction method was adopted to synthesize nano cobalt powder and hypophosphorous acid ($H_3PO_2$) was used as reduction agent. Both the HCP and the FCC Co phase were developed while $CoSO_4{\cdot}7H_2O$ concentration ranged from 0.7 M to 1.1 M. Secondary phase such as $Co(OH)_2$ and $CO_3O_4$ were also observed. Peaks for the crystalline Co phase having HCP and FCC structure crystallized as increasing the concentration of $H_3PO_2$, indicating that the amount of reduction agent was enough to reduce $Co(OH)_2$. Consequently, a homogeneous Co phase could be developed without second phase when the $H_3PO_2/CoSO_4{\cdot}7H_2O$ ratio exceeded 7.

• Journal of Ceramic Processing Research
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• v.13 no.spc2
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• pp.308-311
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• 2012

A wide range of possible hazards existing in thermal batteries are mainly caused by thermal runaway, which results in overheating or explosion in extreme case. Battery separators ensure the separation between two electrodes and the retention of ion-conductive electrolytes. Thermal runaways in thermal batteries can be significantly reduced by the adoption of these separators. The high operating temperature and the violent reactivity in thermal batteries, however, have limited the introduction of conventional separators. As a substitute for separators, MgO powders have been mostly used as a binder to hold molten salt electrolyte. During recent decades the fabrication technology of ceramic fiber, which has excellent mechanical strength and chemical stability, has undergone significant improvement. In this study we adopted wet-laid nonwoven paper making method instead of the electrospinning method which is costly and troublesome to produce in volume. Polymeric precursor can readily be coated on the surface of wet-laid ceramic paper, and be formed into ceramic film after heat treatment. The mechanical strength and the thermo-chemical stability as well as the wetting behaviors of ceramic separators with various molten salts were investigated to be applicable to thermal batteries. Due to their excellent chemical, mechanical, and electrical properties, wet-laid nonwoven separators made from ceramic fibers have revealed positive possibility as new separators for thermal batteries which operate at high temperature with no conspicuous sign of a short circuit and corrosion.

• Journal of Powder Materials
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• v.12 no.4 s.51
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• pp.284-290
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• 2005

ZnO nanostructures with various shapes were synthesized under ambient pressure condition by a wet chemical reaction method. Nanorods of ZnO with hexagonal cross-section and their aggregates with radiate shape were synthesized. Precursor concentration affected considerably the shape evolution of ZnO nanorods. Low precursor concentration was proved to be more preferable to the growth of ZnO nanorods, which is attributed to the intrinsic characteristics of chemical reaction in the synthesis of ZnO from zinc compounds.

• Proceedings of the Korean Powder Metallurgy Institute Conference
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• 2006.09b
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• pp.1167-1168
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• 2006

In this study, the pure iron powder was treated with aqueous phosphoric acid to produce phosphate insulating layer on the surface. After drying the powder, it was compacted in a mold with a diameter of 20mm at 800MPa. The powder compacts were then heat treated at $500^{\circ}C$ for 1 hour. The results showed that insulated iron powder was obtained with uniform phosphate layer by chemical reaction. With increased amount of phosphate layer, the core loss and density of compacts were decreased. It was also found that the addition of ethyl alcohol during insulating reaction resulted in improved core loss value.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.24 no.4
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• pp.135-139
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• 2014

The hydride vapor phase epitaxy (HVPE) grown GaN samples to precisely measure the surface characteristics was applied to a molten KOH/NaOH wet chemical etching. The etching rate by molten KOH/NaOH wet chemical etching method was slower than that by conventional etching methods, such as phosphoric and sulfuric acid etching, which may be due to the formation of insoluble coating layer. Therefore, the molten KOH/NaOH wet chemical etching is a better efficient method for the evaluation of etch pits density. The grown GaN single crystals were characterized by using X-ray diffraction (XRD) and X-ray rocking curve (XRC). The etching characteristics and surface morphologies were studied by scanning electron microscopy (SEM). From etching results, the optimum etching condition that the etch pits were well independently separated in space and clearly showed their shape, was $410^{\circ}C$ and 25 min. The etch pits density obtained by molten KOH/NaOH wet chemical etching under optimum etching condition was around $2.45{\times}10^6cm^{-2}$, which is commercially an available materials.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.02a
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• pp.340-340
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• 2012

최근 MOS 소자들이 게이트 산화막을 Mono-layer가 아닌 Multi-Layer을 사용하는 추세이다. Bulk와 High-k물질간의 Dangling Bond를 줄이기 위해 Passivation 층을 만드는 것을 예로 들 수 있다. 이러한 Double Layer의 쓰임이 많아지면서 계면에서의 Interface State Density의 영향도 커지게 되면서 이를 측정하는 방법에 대한 연구가 활발히 진행되고 있다. 본 연구에서는 $SiO_2$ Double Layer의 Interface State Density를 Conductance Method를 사용하여 구하는 연구를 진행하였다. Wet Oxidation과 Chemical Vapor Deposition (CVD) 공정을 이용하여 $SiO_2$ Double-layer로 증착한 후 Aluminium을 전극으로 하는 MOS-Cap 구조를 만들었다. 마지막 공정은 $450^{\circ}C$에서 30분 동안 Forming-Gas Annealing (FGA) 공정을 진행하였다. LCR meter를 이용하여 high frequency C-V를 측정한 후 North Carolina State University California Virtual Campus (NCSU CVC) 프로그램을 이용하여 Flatband Voltage를 구한 후에 Conductance Method를 측정하여 Dit를 측정하였다. 본 연구 결과 Double layer (Wet/CVD $SiO_2$)에 대해서 Conductance Method를 방법을 이용하여 Dit를 측정하는 것이 유효하다는 것을 확인 할 수 있었다. 본 실험은 앞으로 많이 쓰이고 측정될 Double layer (Wet/CVD $SiO_2$)에 대한 Interface State Density의 측정과 분석에 대한 방향을 제시하는데 도움이 될 것이라 판단된다.

• Journal of the Semiconductor & Display Technology
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• v.5 no.2 s.15
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• pp.41-46
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• 2006

Wet etching process in recent semiconductor manufacturing is devided into batch and single wafer type. Batch type wet etching process provides more throughput with poor etching uniformity compared to single wafer type process. Single wafer process achieves better etching uniformity by boom-swing injected chemical on rotating wafer. In this study, etching characteristics of $SiO_2$ layer at room and elevated temperature is evaluated and compared. The difference in etching rate and uniformity of each condition is identified, and the temperature profile of injected chemical is theoretically calculated and compared to that of experimental result. Better etching uniformity is observed with single wafer tool with boom-swing injection compared to single wafer process without boom-swing or batch type tool.