• 제목/요약/키워드: Wet chemical etching

검색결과 144건 처리시간 0.034초

Passivation effect on large volume CdZnTe crystals

  • B. Park;Y. Kim;J. Seo;J. Byun;K. Kim
    • Nuclear Engineering and Technology
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    • 제54권12호
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    • pp.4620-4624
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    • 2022
  • Several cadmium zinc telluride (CZT) crystals were fabricated into radiation detectors using methods that included slicing, dicing, lapping, polishing, and chemical etching. A wet passivation with sodium hypochlorite (NaOCl) was then carried out on the Br-etched detectors. The Te-rich layer on the CZT surface was successfully compensated to the Te oxide layer, which was analyzed with X-ray photoelectron spectroscopy data of both a Br-etched crystal and a passivated CZT crystals. We confirmed that passivation with NaOCl improved the transport property by analyzing the mobility-lifetime product and surface recombination velocity. The electrical and spectroscopic properties of large volume detectors were compared before and after passivation, and then the detectors were observed for a month. Both bar and quasi-hemispherical detectors show an enhancement in performance after passivation. Thus, we could identify the effect of NaOCl passivation on large volume CZT detectors.

Origin of Tearing Paths in Transferred Graphene by H2 Bubbling Process and Improved Transfer of Tear-Free Graphene Films U sing a Heat Press

  • Jinsung Kwak
    • 한국재료학회지
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    • 제32권12호
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    • pp.522-527
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    • 2022
  • Among efforts to improve techniques for the chemical vapor deposition of large-area and high-quality graphene films on transition metal substrates, being able to reliably transfer these atomistic membranes onto the desired substrate is a critical step for various practical uses, such as graphene-based electronic and photonic devices. However, the most used approach, the wet etching transfer process based on the complete etching of metal substrates, remains a great challenge. This is mainly due to the inevitable damage to the graphene, unintentional contamination of the graphene layer, and increased production cost and time. Here, we report the systematic study of an H2 bubbling-assisted transfer technique for graphene films grown on Cu foils, which is nondestructive not only to the graphene film but also to the Cu substrate. Also, we demonstrate the origin of the graphene film tearing phenomenon induced by this H2 bubbling-assisted transfer process. This study reveals that inherent features are produced by rolling Cu foil, which cause a saw-like corrugation in the poly(methyl methacrylate) (PMMA)/graphene stack when it is transferred onto the target substrate after the Cu foil is dissolved. During the PMMA removal stage, the graphene tearing mainly appears at the apexes of the corrugated PMMA/graphene stack, due to weak adhesion to the target substrate. To address this, we have developed a modified heat-press-assisted transfer technique that has much better control of both tearing and the formation of residues in the transferred graphene films.

Efficiency Improvement in InGaN-Based Solar Cells by Indium Tin Oxide Nano Dots Covered with ITO Films

  • Seo, Dong-Ju;Choi, Sang-Bae;Kang, Chang-Mo;Seo, Tae Hoon;Suh, Eun-Kyung;Lee, Dong-Seon
    • 한국진공학회:학술대회논문집
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    • 한국진공학회 2013년도 제44회 동계 정기학술대회 초록집
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    • pp.345-346
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    • 2013
  • InGaN material is being studied increasingly as a prospective material for solar cells. One of the merits for solar cell applications is that the band gap energy can be engineered from 0.7 eV for InN to 3.4 eV for GaN by varying of indium composition, which covers almost of solar spectrum from UV to IR. It is essential for better cell efficiency to improve not only the crystalline quality of the epitaxial layers but also fabrication of the solar cells. Fabrication includes transparent top electrodes and surface texturing which will improve the carrier extraction. Surface texturing is one of the most employed methods to enhance the extraction efficiency in LED fabrication and can be formed on a p-GaN surface, on an N-face of GaN, and even on an indium tin oxide (ITO) layer. Surface texturing method has also been adopted in InGaN-based solar cells and proved to enhance the efficiency. Since the texturing by direct etching of p-GaN, however, was known to induce the damage and result in degraded electrical properties, texturing has been studied widely on ITO layers. However, it is important to optimize the ITO thickness in Solar Cells applications since the reflectance is fluctuated by ITO thickness variation resulting in reduced light extraction at target wavelength. ITO texturing made by wet etching or dry etching was also revealed to increased series resistance in ITO film. In this work, we report a new way of texturing by deposition of thickness-optimized ITO films on ITO nano dots, which can further reduce the reflectance as well as electrical degradation originated from the ITO etching process.

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전기 분무 이온화를 이용한 단백질 질량분석용 마이크로 유체 소자의 제작 및 실험 (Sheathless electrospray ionization with integrated metal emitter on microfluidic device)

  • 김민수;주황수;이국녕;김병기;김용권
    • 대한전기학회:학술대회논문집
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    • 대한전기학회 2004년도 하계학술대회 논문집 C
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    • pp.2102-2104
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    • 2004
  • In this study, sheathless electrospray from PDMS/glass microchips with conducting metal emitter tip is described. A chip-based capillary electrophoresis/mass spectrometry (CE/MS) system has advantages of the CE separation and on-line electrospray detection of peptide solution. We have fabricated a new electrospray ionization(ESI) device composed of the metal emitter tip and CE separation channel monolithically in a glass microchip. The separation channel and metal emitter tip are fabricated using a glass wet etching and gold electro plating process, respectively. The fabricated micro electrospray chip was tested by spraying peptide sample for mass spectrometric analysis. Singlely-charged peak and doublely-charged peak of peptide were detected and further MS/MS fragmentation was performed in each peak. Direct comparisons with conventional glass or fused silica emitters showed very similar performance with respect to signal strength and stability.

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Self-textured Al-doped ZnO transparent conducting oxide for p-i-n a-Si:H thin film solar cell

  • 김도영;이준신;김형준
    • 한국재료학회:학술대회논문집
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    • 한국재료학회 2009년도 추계학술발표대회
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    • pp.50.1-50.1
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    • 2009
  • Transparent conductive oxides (TCOs) play an important role in thin-film solar cells in terms of low cost and performance improvement. Al-doped ZnO (AZO) is a very promising material for thin-film solar cellfabrication because of the wide availability of its constituent raw materials and its low cost. In this study, AZO films were prepared by low pressurechemical vapor deposition (LPCVD) using trimethylaluminum (TMA), diethylzinc(DEZ), and water vapor. In order to improve the absorbance of light, atypical surface texturing method is wet etching of front electrode using chemical solution. Alternatively, LPCVD can create a rough surface during deposition. This "self-texturing" is a very useful technique, which can eliminate additional chemical texturing process. The introduction of a TMA doping source has a strong influence on resistivity and the diffusion of light in a wide wavelength range.The haze factor of AZO up to a value of 43 % at 600 nm was achieved without an additional surface texturing process by simple TMA doping. The use of AZO TCO resulted in energy conversion efficiencies of 7.7 % when it was applied to thep-i-n a-Si:H thin film solar cell, which was comparable to commercially available fluorine doped tin oxide ($SnO_2$:F).

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홀로그래픽 리소그래피에 의한 미세패턴 형성과 MOCVD에 의한 양자세선 어레이의 제작 (Micropattern generation by holographic lithography and fabrication of quantum wire array by MOCVD)

  • 김태근;조성우;임현식;김용;김무성;박정호;민석기
    • 전자공학회논문지A
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    • 제33A권6호
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    • pp.114-119
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    • 1996
  • The use of holographic interference lithography and removal techniques to corrugate GaAs substrate have been studied. The periodic photoresist structure, which serves as a protective mask during etching, is holographically prepared. Subsequently periodic V-grooved pattern is formed on the GaAs substrate by conventional a H$_{2}$SO$_{4}$-H$_{2}$O$_{2}$-H$_{2}$O wet etching. The linewidth of a GaAs pattern is about 0.4$\mu$m and the depth is 0.5$\mu$m A quantum wires(QWRs) array is well formed on the V-grooved substrate by MOCVD (metalorganic chemical vapor deposition) growth of GaAs/Al$_{0.5}$Ga$_{0.5}$As (50$\AA$/300$\AA$) quantum wells. The formation of QWR array is confirmed by the temperature dependent photoluminescence (PL) measurement. The intensive PL peak with a FWHM of 6meV at 21K shows the high quality of the QWR array.

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석영 기판 위에 집속 이온빔 기술에 의해 형성된 비정질 게르마늄 박막 미세 패턴의 편광 및 복굴절 특성 (Characteristics of Polarization and Birefringence for Submicron a-Ge Thin Film on Quartz Substrate Formed by Focused-Ion-Beam)

  • 신경;김진우;박정일;이현용;정홍배
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 1999년도 춘계학술대회 논문집
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    • pp.617-620
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    • 1999
  • In this study, the polarization e(fecal and the birefringence effect of amorphous germanium (a-Ge) thin films were investigated by using linearly polarized He-Ne laser beam. The a-7e thin films were deposited on the quarts substrate by plasma enhanced chemical vapor deposition (PECVD) and thermal vacuum evaporation In order to obtain the optimum grating arrays, inorganci resists such as Si$_3$N$_4$ and a-Se$_{75}$ Ge$_{25}$ , were prepared with the optimized thickness by Monte Carlo (MC) simulation. As the results of MC simulation, the thickness ofa-Se$_{75}$ Ge$_{25}$ resist was determined with Z$_{min}$ of 360$\AA$ . The resists were exposed to Ga$^{+}$-FIB with accelerating energies of 50 keV, developed by wet etching, and a-Ge thin film was etched by reactive ion-etching (RIE). Finally, we were obtained grating arrays which grating width and linewidth are 0.8${\mu}{\textrm}{m}$, respectively and we studied the polarization and birefringence effect in transmission grating array made of high refractive amorphous material, and the applicability as waveplates and polarizers in optical device.e.e.

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A Study on Modified Silicon Surface after $CHF_3/C_2F_6$ Reactive Ion Etching

  • Park, Hyung-Ho;Kwon, Kwang-Ho;Lee, Sang-Hwan;Koak, Byung-Hwa;Nahm, Sahn;Lee, Hee-Tae;Kwon, Oh-Joon;Cho, Kyoung-Ik;Kang, Young-Il
    • ETRI Journal
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    • 제16권1호
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    • pp.45-57
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    • 1994
  • The effects of reactive ion etching (RIE) of $SiO_2$ layer in $CHF_3/C_2F_6$ on the underlying Si surface have been studied by X-ray photoelectron spectroscopy (XPS), secondary ion mass spectrometer, Rutherford backscattering spectroscopy, and high resolution transmission electron microscopy. We found that two distinguishable modified layers are formed by RIE : (i) a uniform residue surface layer of 4 nm thickness composed entirely of carbon, fluorine, oxygen, and hydrogen with 9 different kinds of chemical bonds and (ii) a contaminated silicon layer of about 50 nm thickness with carbon and fluorine atoms without any observable crystalline defects. To search the removal condition of the silicon surface residue, we monitored the changes of surface compositions for the etched silicon after various post treatments as rapid thermal anneal, $O_2$, $NF_3$, $SF_6$, and $Cl_2$ plasma treatments. XPS analysis revealed that $NF_3$ treatment is most effective. With 10 seconds exposure to $NF_3$ plasma, the fluorocarbon residue film decomposes. The remained fluorine completely disappears after the following wet cleaning.

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Fabrication of a robust, transparent, and superhydrophobic soda-lime glass

  • Rahmawan, Yudi;Kwak, Moon-Kyu;Moon, Myoung-Woon;Lee, Kwang-Ryeol;Suh, Kahp-Yang
    • 한국진공학회:학술대회논문집
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    • 한국진공학회 2009년도 제38회 동계학술대회 초록집
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    • pp.86-86
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    • 2010
  • Micro- and nanoscale texturing and control of surface energy have been considered for superhydrophobicity on polymer and silicon. However these surfaces have been reported to be difficult to meet the robustness and transparency requirements for further applications, from self cleaning windows to biochip technology. Here we provided a novel method to fabricate a nearly superhydrophobic soda-lime glass using two-step method. The first step involved wet etching process to fabricate micro-sale patterns on soda-lime glass. The second step involved application of $SiO_x$-incorporated DLC to generate high intrinsic contact angle on the surface using chemical vapor deposition (CVD) process. To investigate the effect of surface roughness, we used both positive and negative micro-scale patterns on soda-limeglass, which is relatively hard for surface texturing in comparison to quartz or Pyrex glasses due to the presence of impurities, but cheaper. For all samples we tested the static wetting angle and transparency before and after 100 cycles of wear test using woolen steel. The surface morphology is observed using optical and scanning electron microscope (SEM). The results shows that negative patterns had a greater wear resistance while the hydrophobicity was best achieved using positive patterns having static contact angle up to 140 deg. with about 80% transparency. The overall experiment shows that positive patterns at etching time of 1 min shows the optimum transparency and hydrophobicity. The optimization of micro-scale pattern to achieve a robust, transparent, superhydrophobic soda-lime glass will be further investigated in the future works.

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