• Journal of the Korean Crystal Growth and Crystal Technology
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• v.19 no.6
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• pp.288-292
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• 2009

Hydrophobic/hydrophilic patterned substrates were fabricated on a glass substrate by a liquid phase deposition (LPD) method. Hydrophobic surface was obtained by modifying ZnO thin films with a rough surface using a fluoroalkyltrimethoxysilane (FAS) and hydrophilic surface was prepared by decomposing FAS on an exposed to UV light. The hexagonal ZnO rods were perpendicularly grown by LPD method on glass substrates with a ZnO seed layer. The diameter and thickness of hexagonal ZnO rods were increased as a function of increases of immersion time. The surface morphology, thickness, crystal structure, transmittance and contact angle of prepared ZnO thin films were measured by field emission scanning electron microscopy (FE-SEM), X-ray diffraction (XRD), UV-visible spectrophotometer (UV-vis) and contact angle measurement. Hydrophilic ZnO thin films with a contact angle of $20^{\circ}{\sim}30^{\circ}$ were changed to a hydrophobic surface with a contact angle of $145^{\circ}{\sim}161^{\circ}$ by a FAS surface treatment. Prepared hydrophobic surface was pattered by an irradiation of UV light using shadow mask with $300\;{\mu}m$ or 3 mm dot size. Finally, the hydrophobic surface exposed to UV light was changed to a hydrophilic surface.

• Korean Chemical Engineering Research
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• v.49 no.2
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• pp.250-255
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• 2011

In this study, by using the polymeric membrane separation process, the $CO_{2}/CH_{4}$ separation and $H_{2}S$ removal from biogas were performed in order to $CH_{4}$ purification and enrichment for the fuel cell energy source application. Fibers were spun by dry/wet phase inversion method. The module was manufactured by fabricating fibers after surface coating with silicone elastomer. The scanning electron microscopy(SEM) studies showed that the produced fibers typically had an asymmetric structure; a dense top layer supported by a porous, sponge substructure. The permeance of $CO_{2}$ and $CO_{2}/CH_{4}$ selectivity increased with pressure and temperature. Mixture gas with increasing pressure and temperature, removal efficiency of the $CO_{2}$ and $H_{2}S$ were decreased while concentration of $CH_{4}$ was increased up to 100%. When retentate flow rate was increased with the decreasing of pressure and temperature the $CH_{4}$ recovery ratio in retentate side was increased while the $CH_{4}$ purity in retentate side was decreased.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2010.06a
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• pp.11-11
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• 2010

Thin-film-transistors (TFTs) that can be deposited at low temperature have recently attracted lots of applications such as sensors, solar cell and displays, because of the great flexible electronics and transparent. Transparent and flexible transistors are being required that high mobility and large-area uniformity at low temperature [1]. But, unfortunately most of TFT structures are used to be $SiO_2$ as gate dielectric layer. The $SiO_2$ has disadvantaged that it is required to high driving voltage to achieve the same operating efficiency compared with other high-k materials and its thickness is thicker than high-k materials [2]. To solve this problem, we find lots of high-k materials as $HfO_2$, $ZrO_2$, $SiN_x$, $TiO_2$, $Al_2O_3$. Among the High-k materials, $Al_2O_3$ is one of the outstanding materials due to its properties are high dielectric constant ( ~9 ), relatively low leakage current, wide bandgap ( 8.7 eV ) and good device stability. For the realization of flexible displays, all processes should be performed at very low temperatures, but low temperature $Al_2O_3$ grown by sputtering showed deteriorated electrical performance. Further decrease in growth temperature induces a high density of charge traps in the gate oxide/channel. This study investigated the effect of growth temperatures of ALD grown $Al_2O_3$ layers on the TFT device performance. The ALD deposition showed high conformal and defect-free dielectric layers at low temperature compared with other deposition equipments [2]. After ITO was wet-chemically etched with HCl : $HNO_3$ = 3:1, $Al_2O_3$ layer was deposited by ALD at various growth temperatures or lift-off process. Amorphous InGaZnO channel layers were deposited by rf magnetron sputtering at a working pressure of 3 mTorr and $O_2$/Ar (1/29 sccm). The electrodes were formed with electron-beam evaporated Ti (30 nm) and Au (70 nm) bilayer. The TFT devices were heat-treated in a furnace at $300^{\circ}C$ and nitrogen atmosphere for 1 hour by rapid thermal treatment. The electrical properties of the oxide TFTs were measured using semiconductor parameter analyzer (4145B), and LCR meter.

• Clean Technology
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• v.23 no.3
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• pp.294-301
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• 2017

Air pollution associated with the $NO_x$ emission from the ship engines is becoming one of the major environmental concerns these days. As the regulations on ship pollutants are strengthened, the wet absorption method, for controlling complex pollutants in a confined space, has the advantage of simultaneously removing various pollutants, but the low solubility of nitrogen monoxide is drawback. In this study, for improving existing denitrification scrubber system, NO oxidation process by hydroxyl radical produced from irradiating UV light on $H_2O_2$ is suggested and the $H_2O_2$ decomposition rates and hydroxyl radical quantum yields were measured to find the optimum condition of $H_2O_2$ photolysis reaction. As a result, the optimum quantum yield and photolysis rate of $H_2O_2$ were 0.8798, $0.6mol\;h^{-1}$ at 8 W, 2 M condition, and oxidation efficiency of 1000 ppm NO gas was 40%. In batch system, NO removal efficiency has a range of 65.0 ~ 67.3% according to input gas concentration of 100 ~ 1500 ppm. This results indicate that the scrubber system using hydrogen peroxide photolysis can be applied as air pollution prevention facility of ship engines.

• Applied Chemistry for Engineering
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• v.28 no.6
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• pp.607-618
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• 2017

Harmful air pollutants are exhausted from the various industrial facilities including the coal-fired thermal power plants and these substances affects on the human health as well as the nature environment. In particular, nitrogen oxides ($NO_x$) and sulfur dioxide ($SO_2$) are known to be causative substances to form fine particles ($PM_{2.5}$), which are also deleterious to human health. The integrated system composed of selective catalytic reduction (SCR) and wet flue gas desulfurization (WFGD) have been widely applied in order to control $NO_x$ and $SO_2$ emissions, resulting in high investment and operational costs, maintenance problems, and technical limitations. Recently, new technologies for the simultaneous removal of $NO_x$ and $SO_2$ from the flue gas, such as absorption, advanced oxidation processes (AOPs), non-thermal plasma (NTP), and electron beam (EB), are investigated in order to replace current integrated systems. The proposed technologies are based on the oxidation of $NO_x$ and $SO_2$ to $HNO_3$ and $H_2SO_4$ by using strong aqueous oxidants or oxidative radicals, the absorption of $HNO_3$ and $H_2SO_4$ into water at the gas-liquid interface, and the neutralization with additive reagents. In this paper, we summarize the technical improvements of each simultaneous abatement processes and the future prospect of technologies for demonstrating large-scaled applications.

• Asian Journal of Atmospheric Environment
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• v.6 no.4
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• pp.246-258
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• 2012

Particulate matter deposited on leaf surfaces may cause erosion/abrasion of epicuticular wax and the malfunction of stomata. However, the deposition processes of particulate matter, such as elemental carbon (EC), has not been studied sufficiently in Asian forest ecosystems. Deposition processes for particulate ${SO_4}^{2-}$ and EC were studied in a Japanese cedar forest in Kajikawa, Niigata Prefecture, Japan, and in a dry evergreen forest and a dry deciduous forest in Sakaerat, Nakhon Ratchasima province, Thailand. The ${SO_4}^{2-}$ fluxes attributed to rainfall outside the forest canopy (RF), throughfall (TF), and stemflow (SF) showed distinct seasonalities at both sites, increasing from November to February at the Kajikawa site and in March/April at the Sakaerat site. Seasonal west/northwest winds in winter may transport sulfur compounds across the Sea of Japan to the Kajikawa site. At the Sakaerat site, pollutants suspended in the air or dry deposits from the dry season might have been washed away by the first precipitations of the wet season. The EC fluxes from RF and TF showed similar variations by season at the Kajikawa site, while the flux from TF was frequently lower than that from RF at the Sakaerat site. Particulate matter strongly adsorbed onto leaf surfaces is not washed away by rainfall and contributes to the EC flux. At the Kajikawa site, Japanese cedar leaf surfaces accumulated the highest levels of particulate matter and could not be neglected when calculating the total flux. When such leaf-surface particles were considered, the contribution of dry deposition to the total EC flux was estimated to be 67%, 77%, and 82% at the Kajikawa site, and at the evergreen and deciduous forests of the Sakaerat site, respectively. Leaf-surface particles must be included when evaluating the dry and total fluxes of particulate matter, in particular for water-insoluble constituents such as EC.

• Proceedings of the Korean Vacuum Society Conference
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• 2014.02a
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• pp.324-325
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• 2014

Quantum wells infrared photodetectors (QWIPs) have been used to detect infrared radiations through the principle based on the localized stated in quantum wells (QWs) [1]. The mature III-V compound semiconductor technology used to fabricate these devices results in much lower costs, larger array sizes, higher pixel operability, and better uniformity than those achievable with competing technologies such as HgCdTe. Especially, GaAs/AlGaAs QWIPs have been extensively used for large focal plane arrays (FPAs) of infrared imaging system. However, the research efforts for increasing sensitivity and operating temperature of the QWIPs still have pursued. The modification of heterostructures [2] and the various fabrications for preventing polarization selection rule [3] were suggested. In order to enhance optical performances of the QWIPs, double barrier quantum well (DBQW) structures will be introduced as the absorption layers for the suggested QWIPs. The DBWQ structure is an adequate solution for photodetectors working in the mid-wavelength infrared (MWIR) region and broadens the responsivity spectrum [4]. In this study, InGaAs/GaAs/AlGaAs double barrier quantum well infrared photodetectors (DB-QWIPs) are successfully fabricated and characterized. The heterostructures of the InGaAs/GaAs/AlGaAs DB-QWIPs are grown by molecular beam epitaxy (MBE) system. Photoluminescence (PL) spectroscopy is used to examine the heterostructures of the InGaAs/GaAs/AlGaAs DB-QWIP. The mesa-type DB-QWIPs (Area : $2mm{\times}2mm$) are fabricated by conventional optical lithography and wet etching process and Ni/Ge/Au ohmic contacts were evaporated onto the top and bottom layers. The dark current are measured at different temperatures and the temperature and applied bias dependence of the intersubband photocurrents are studied by using Fourier transform infrared spectrometer (FTIR) system equipped with cryostat. The photovoltaic behavior of the DB-QWIPs can be observed up to 120 K due to the generated built-in electric field caused from the asymmetric heterostructures of the DB-QWIPs. The fabricated DB-QWIPs exhibit spectral photoresponses at wavelengths range from 3 to $7{\mu}m$. Grating structure formed on the window surface of the DB-QWIP will induce the enhancement of optical responses.

• Journal of Korean Society of Environmental Engineers
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• v.33 no.2
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• pp.71-76
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• 2011

In this study, a heavy metal stabilization treatment using waste resource stabilizing agents was utilized on army firing range soil contaminated with Pb and Cu. Both calcined oyster shells (COS; 5% w/w) and waste cow bone (WCB; 3% w/w) were applied for a wet-curing duration of 28 days. Following the stabilization treatment, the process efficiency was evaluated by various extraction methods for Pb and Cu. Neutral and weak acid extraction methods, such as water soluble extraction and SPLP, did not show positive results for heavy metal stabilization with very low leachability. On the other hand, TCLP and 0.1 N HCl extraction showed that the stabilizing agents significantly reduced the amount of the heavy metals leached from the soil, which strongly supports that the treatment efficiency is positively evaluated in acidic leaching conditions. Specifically, in the 0.1 N HCl extraction, the reduction efficiencies of Pb and Cu leaching were 99.9% and 83.9%, respectively. From the sequential extraction results, a difference between Pb and Cu stabilization was observed, which supports that Pb stabilization is more effective due to the formation of insoluble Pb complexes. This study demonstrates that the application of waste resources for the stabilization of heavy metals is feasible.

• Journal of the Korean Vacuum Society
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• v.6 no.1
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• pp.9-19
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• 1997

The reaction mechanisms of dry cleaning with UV-excited chlorine radical for Zn, Fe and Ti trace contaminants on the Si wafer have been studied by SEM, AFM and XPS analyses in this work. The patterned Zn, Fe and Ti films were deposited on the Si wafer surface by thermal evaporation and changes in the surface morphology after dry cleaning with $Cl_2$and UV/$Cl_2$at $200^{\circ}C$ were studied by optical microscopy and SEM. In addition, changes in the surface roughness of Si wafer with the cleaning was observed by AFM. The chemical bonding states of the Zn, Fe and Ti deposited silicon surface were observed with in-line XPS analysis. Zn and Fe were easily cleaned in the form of volatile zinc-chloride and iron-chloride as verified by the surface morphology changes. Ti which forms involatile oxides was not easily removed at room temperature but was slightly removed by UV/$Cl_2$at elevated temperature of $200^{\circ}C$. It was also found that the surface roughness of the Si wafer increased after $Cl_2$and UV/$Cl_2$cleaning. Therefore, the metallic contaminants on the Si wafer can be easily removed at lower temperature without surface damage by a continuous process using wet cleaning followed by UV/$Cl_2$dry cleaning.

• Journal of Nuclear Fuel Cycle and Waste Technology(JNFCWT)
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• v.7 no.3
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• pp.175-182
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• 2009

The spent cationic exchange resins and anionic exchange resins were separated from mixed spent exchange resins by a fluidized bed gravimetric separator. The separated resins were identified by an elemental analysis and thermogravimetric analysis. The each test sample was prepared by diluting the slurry made by wet ball milling the cationic exchange resins and the anionic exchange resins separated as a spherical granular form for 24 hours. The resulting test samples showed a slurry form of less than $75{\mu}m$ of particle size and 25,000ppm of $COD_{cr}$. The decomposition conditions of each test samples from a thermal power plant were obtained with a lab-scale(reactor volume : 220mL) supercritical water oxidation(SCWO) facility. Then pilot plant(reactor volume : 24 L) tests were performed with the test samples from a thermal power plant and a nuclear power plant successively. Based on the optimal decomposition conditions and the operation experiences by lab-scale facility and the pilot plant, a commercial plant(capacity : 150kg/h) can be installed in a nuclear power plant was designed.