• JSTS:Journal of Semiconductor Technology and Science
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• v.13 no.4
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• pp.410-414
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• 2013

We report the wet etching of titanium nickel (TiNi) films for the production of nano-electro-mechanical (NEM) device. $SiO_2$ and $Si_3N_4$ have been selected as sacrificial layers of TiNi metal and etched with polyethylene glycol and hydrofluoric acid (HF) mixed solution. Volume percentage of HF are varied from 10% to 35% and the etch rate of the $SiO_2$, $Si_3N_4$ and TiNi are reported here. Within the various experiment results, 15% HF mixed polyethylene glycol solution show highest etch ratio between sacrificial layer and TiNi metal. Especially $Si_3N_4$ films shows high etch ratio with TiNi films. Wet etching results are measured with SEM inspection. Therefore, this experiment provides a novel method for TiNi in the nano-electro-mechanical device.

• Journal of the Semiconductor & Display Technology
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• v.5 no.2 s.15
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• pp.47-49
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• 2006

Various methods of making thin film is being used in semiconductor manufacturing process. The most common method in this field includes CVD(Chemical Vapor Deposition) and PVD(Physical Vapor Deposition). Thin film is deposited on both the backside and the frontside of wafers. The thin film deposited on the backside has poor thickness profile, and can contaminate wafers in the following processes. If wafers with the thin film remaining on the backside are immersed in batch type process tank, the thin film fall apart from the backside and contaminate the nearest wafer. Thus, it is necessary to etch the backside of the wafer selectively without etching the frontside, and chemical injection nozzle positioned under the wafer can perform the backside etching. In this study, the backside chemical injection nozzle with optimized chemical injection profile is built for single wafer tool. The evaluation of this nozzle, performed on $Si_3N_4$ layer deposited on the backside of the wafer, shows the etching rate uniformity of less than 5% at the etching rate of more than $1000{\AA}$.

• Restorative Dentistry and Endodontics
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• v.36 no.5
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• pp.385-396
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• 2011

Objectives: This study evaluated the effects of adhesion variables such as the priming concepts of canal wall and the curing modes of adhesives on the sealing ability of a resin-based root canal filling system. Materials and Methods: Apical microleakage of the Resilon-RealSeal systems filled with 3 different combinations of adhesion variables was compared with the conventional gutta-percha filling using a dye penetration method. Experimental groups were SEDC, Resilon (Resilon Research LLC) filling with self-etch RealSeal (SybronEndo) primer and dual-cure RealSeal sealer; NELC, Resilon filling with no etching, Scotchbond Multi-Purpose (3M ESPE) primer application and light-curing adhesive; and TELC, Resilon filling with Scotchbond Multi-Purpose primer and adhesive used under total etch / wet bonding and lightcure protocols. GPCS, gutta-percha filling with conventional AH26 plus sealer, was the control group. Results: The median longitudinal dye penetration length of TELC was significantly shorter than those of GPCS and SEDC (Kruskal-Wallis test, p < 0.05). In the cross-sectional microleakage scores, TELC showed significant differences from other groups at 2 to 5 mm from the apical foramen (Kruskal-Wallis test, p < 0.05). Conclusions: When a resin-based root canal filling material was used, compared to the self-etching primer and the dual-cure sealer, the total etch/wet-bonding with primer and light-curing of adhesive showed improved apical sealing and was highly recommended.

• ETRI Journal
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• v.27 no.5
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• pp.484-490
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• 2005

We fabricated 40 Gb/s front-end optical receivers using spot-size converter integrated waveguide photodiodes (SSC-WGPDs). The fabricated SSC-WGPD chips showed a high responsivity of approximately 0.8 A/W and a 3 dB bandwidth of approximately 40 GHz. A selective wet-etching method was first adopted to realize the required width and depth of a tapered waveguide. Two types of electrical pre-amplifier chips were used in our study. One has higher gain and the other has a broader bandwidth. The 3 dB bandwidths of the higher gain and broader bandwidth modules were about 32 and 42 GHz, respectively. Clear 40 Gb/s non-return-to-zero (NRZ) eye diagrams showed good system applicability of these modules.

• Journal of the Korean Society for Precision Engineering
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• v.31 no.1
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• pp.75-81
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• 2014

Laser beam machining has been known as efficient for glass micromachining. It is usually used the ultra-short pulsed laser which is time-consuming and uneconomic process. In order to use economic and powerful long pulsed laser, indirect processing called laser-induced backside wet etching (LIBWE) is good alternative method. In this paper, micromachining of glass using Nd:YAG laser with nanosecond pulsed beam has been attempted. In order to improve shape accuracy, combined processing with magnetic stirrer has been widely used. Magnetic stirrer acts to circulate the solution and remove the bubble but it is not suitable for deep hole machining. To get better effect, ultrasonic vibration was applied for improving shape accuracy.

• Journal of Welding and Joining
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• v.30 no.3
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• pp.26-31
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• 2012

Three-dimensional integrated circuit (3D IC) technology has become increasingly important due to the demand for high system performance and functionality. We have evaluated the effect of Buffered oxide etch (BOE) on the interfacial bonding strength of Cu-Cu pattern direct bonding. X-ray photoelectron spectroscopy (XPS) analysis of Cu surface revealed that Cu surface oxide layer was partially removed by BOE 2min. Two 8-inch Cu pattern wafers were bonded at $400^{\circ}C$ via the thermo-compression method. The interfacial adhesion energy of Cu-Cu bonding was quantitatively measured by the four-point bending method. After BOE 2min wet etching, the measured interfacial adhesion energies of pattern density for 0.06, 0.09, and 0.23 were $4.52J/m^2$, $5.06J/m^2$ and $3.42J/m^2$, respectively, which were lower than $5J/m^2$. Therefore, the effective removal of Cu surface oxide is critical to have reliable bonding quality of Cu pattern direct bonds.

• Journal of the Korean Electrochemical Society
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• v.16 no.1
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• pp.1-8
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• 2013

This review article summarizes metal-assisted chemical etching (MAC etch or MACE), an anisotropic etching method for Si, and describes principles, main factors, and recent achievements in literature. In 1990, it was discovered that, with metal catalyst on surface and $H_2O_2$/HF as etchant, Si substrate can be etched anisotropically, in even in solution. In contrast to high-cost vacuum-based dry etching methods, MAC etch enables to fabricate a variety of high aspect ratio nanostructures through wet etching process.

• Transactions of Materials Processing
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• v.13 no.4
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• pp.326-333
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• 2004

The nanoprobe based on lithography, mainly represented by SPM based technologies, has been recognized as a potential application to fabricate the surface nanosctructures because of its operational versatility and simplicity. However, nanoprobe based on lithography itself is not suitable for mass production because it is time a consuming method and not economical for commercial applications. One solution is to fabricate a mold that will be used for mass production processes such as nanoimprint, PDMS casting, and others. The objective of this study is to fabricate the silicon stamper for PDMS casting process by a mastless fabrication technique using the combination of nano/micro machining by Nanoindenter XP and KOH wet etching. Effect of the Berkovich tip alignment on the deformation was investigated. Grooves were machined on a silicon surface, which has native oxide on it, by constant load scratch (CLS), and they were etched in KOH solutions to investigate chemical characteristics of the machined silicon surface. After the etching process, the convex structures was made because of the etch mask effect of the mechanically affected layer generated by nanoscratch. On the basis of this fact, some line patterns with convex structures were fabricated. Achieved groove and convex structures were used as a stamper for PDMS casting process.

• Proceedings of the Korean Vacuum Society Conference
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• 2011.02a
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• pp.401-401
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• 2011

In this work, we deposited Al2O3doped ZnO (AZO) thin films by direct current (DC) magnetron sputtering method with a $40^{\circ}$ tilted target, for application in the front layer of thin film solar cell. Wet chemical etching behavior of AZO films was also investigated. In order to optimize textured AZO films, oxalic acid ($C_2H_2O_4$)has been used as wet etchant of AZO film. In this experiment we used 0.001% concentration of oxalic acid various etching time, that showed an anisotropy in etching texture of AZO films. Electrical resistivity, Hall mobility and carrier concentration measurements are performed by using the Hall measurement, that are $6{\times}10^{-4}{\Omega}cm$, $20{\sim}25cm^2/V-s$ and $4{\sim}6{\times}10^{20}$, respectively.

• Transactions of Materials Processing
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• v.13 no.3
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• pp.285-289
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• 2004

Micro tensile test specimens of thin film single crystal silicon for the most useful structural materials in MEMS (Micro Electro Mechanical System) devices were fabricated using SOI (Silicon-on-Insulator) wafers and MEMS processes. Dimensions of micro tensile test specimens were thickness of $7\mu\textrm{m}$, width of 50~$350\mu\textrm{m}$, and length of 2mm. Top and bottom silicon were etched using by deep RIE (Reactive Ion Etching). Thin film aluminum markers on testing region of specimens with width of $5\mu\textrm{m}$, lengths of 30~$180\mu\textrm{m}$ and thickness of 200 nm for measuring tensile strain were fabricated by aluminum wet etching method. Fabricated side wall angles of aluminum marker were about $45^{\circ}~50^{\circ}$. He-Ne laser with wavelength of 633nm was used for checking fringed patterns.