• Journal of the Korean Society for Precision Engineering
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• v.22 no.1
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• pp.199-206
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• 2005

Mask manufacturing is a high COC and COO process in developing of semiconductor devices because of mask production tool with high resolution. Direct writing has been thought to be the one of the patterning method to cope with development or small-lot production of the device. This study consists two categories. One is the additional process of the direct and maskless patterning generation using SLA for easy and convenient application and the other is a removal process using wet-etching process. In this study, cured status of epoxy pattern is most important parameter because of the beer-lambert law according to the diffusion of UV light. In order to improve the contact force between patterns and substrate, prime process was performed and to remove the semi-cured resin which makes a bad effects to the pattern, spin cleaning process using TPM was also performed. At a removal process, contact force between photo-curable resin as an etching mask and Si wafer is important parameter.

• Journal of the Semiconductor & Display Technology
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• v.4 no.4 s.13
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• pp.19-26
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• 2005

The process optimization of ozone concentration and half life time was investigated in ultra pure water and alkaline solutions for the wet cleaning of silicon wafer surface at room temperature. In the ultra pure water,. the maximum concentration (35 ppm) of ozone was measured at oxygen flow rate of 3 liters/min and ozone generator power over 60%. The half life time of ozone increased at lower power of ozone generator. Additive gases such as $N_2$ and $CO_2$ were added to increase the concentration and half life time of ozone. Although the maximum ozone concentration was higher with the addition of $N_2$ gas, a longer half life time was observed with the addition of $CO_2$. When $NH_4OH$ of 0.05 or 0.10 vol% was added in DI water, the pH of the solution was around 10. The addition of ozone resulted in the half life time less than 1 min. In order to maintain high pH and ozone concentration, ozone was continuously supplied in 0.05 vol% ammonia solutions. 3 ppm of ozone was dissolved in ammonia solutions. The static contact angle of silicon wafer surface became hydrophilic. The particle removal was possible alkaline ozone solutions. The organic contamination can be removed by ozonated ultra pure water and then alkaline solution containing ozone can remove the particles on silicon surface at room temperature.

• Conservation Science in Museum
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• v.9
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• pp.67-83
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• 2008

This study is process of conservation treatment for textiles and custumes containing Jikgeum(weave with supplementary golden wefts) and Bugeum(Gold sticking) among excavated ones(including all of Sinsu751) of Cheongyeongunju (a princess) collected by the National Museum of Korea. Adhesive strength was reinforced by coating 2% solution of glue on layer of gold disintegrated in the course of depletion of gold(Au) on the surface after conducting nondestructive test(X-ray fluorescent analysis) of flat gold strip and gold sticking. To remove dust on the surface and polluted materials, dry cleaning through vacuum suction and spray-type wet cleaning were conducted simultaneously and damaged part was restored to recover the relics to original state.

• Conservation Science in Museum
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• v.11
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• pp.17-30
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• 2010

Here is an introduction of the conservation process and storing method of 26 garments for exhibition among the excavated garments of Cheonngyeongunju(a princess) preserved in the National Museum of Korea. Before processing, the artifacts were investigated to find out the type of material and the damaged parts, and then surface and wet cleaning were conducted. After that, it were dried and fixed while held by hand for stability of the artifacts. When stored, the artifact was folded minimally in large parts to prevent damage and placed in a neutral box with buffers in between.

• Journal of the Korean Vacuum Society
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• v.6 no.1
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• pp.9-19
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• 1997

The reaction mechanisms of dry cleaning with UV-excited chlorine radical for Zn, Fe and Ti trace contaminants on the Si wafer have been studied by SEM, AFM and XPS analyses in this work. The patterned Zn, Fe and Ti films were deposited on the Si wafer surface by thermal evaporation and changes in the surface morphology after dry cleaning with $Cl_2$and UV/$Cl_2$at $200^{\circ}C$ were studied by optical microscopy and SEM. In addition, changes in the surface roughness of Si wafer with the cleaning was observed by AFM. The chemical bonding states of the Zn, Fe and Ti deposited silicon surface were observed with in-line XPS analysis. Zn and Fe were easily cleaned in the form of volatile zinc-chloride and iron-chloride as verified by the surface morphology changes. Ti which forms involatile oxides was not easily removed at room temperature but was slightly removed by UV/$Cl_2$at elevated temperature of $200^{\circ}C$. It was also found that the surface roughness of the Si wafer increased after $Cl_2$and UV/$Cl_2$cleaning. Therefore, the metallic contaminants on the Si wafer can be easily removed at lower temperature without surface damage by a continuous process using wet cleaning followed by UV/$Cl_2$dry cleaning.

• Progress in Superconductivity and Cryogenics
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• v.19 no.2
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• pp.25-28
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• 2017

In superconducting coil applications particularly in wet wound coils, coated conductor (CC) tapes are subjected to different type of stresses that could affect its electromechanical transport property. These include hoop stress acting along the length of the CC tape and the Lorentz force acting perpendicular to the CC tape's surface. Since the latter is commonly associated with the delamination problem of multi-layered REBCO CC tapes, more understanding and attention on the delamination phenomena induced in the case of coil applications are needed. Difference on the coefficient of thermal expansion (CTE) of each constituent layer of the CC tape, the bobbin, and the impregnating materials is the main causes of delamination in CC tapes when subjected to thermal and mechanical cycling. In the design of degradation-free superconducting coils, therefore, characterization of the delamination behaviors including mechanism and strength in the multi-layered REBCO CC tapes becomes a critical issue. Various trials to increase the delamination strength by improving interface characteristics at interlayers have been performed. In this study, in order to investigate the influences of laser cleaning and Ag annealing treated at the substrate side surface, transverse tensile tests were conducted under different sample configurations using $4.5mm{\times}8mm$ upper anvil. The mechanical delamination strength of differently processed CC samples was examined at room temperature (RT). As a result, the Sample 1 with the additional laser cleaning and Ag annealing processes and the Sample 2 with additional Ag annealing process only showed higher mechanical delamination strength as compared to the Sample 3 without such additional treatments. Sample 3 showed quite different behavior when the loading direction is to the substrate side where the delamination strength much lower as compared to other cases.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.13 no.7
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• pp.1393-1398
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• 2009

Conventionally, etching is first considered for microelectronics fabrication process and is specially important in process of a-Si:H thin film transistor for LCD. In this paper, we stabilize properties of device by development of wet and dry etching process. The a-Si:H TFTs of this paper is inverted staggered type. The gate electrode is lower part. The gate electrode is formed by patterning with length of 8 ${\mu}$m${\sim}$16 ${\mu}$m and width of 80${\sim}$200 ${\mu}$m after depositing with gate electrode (Cr) 1500 ${\AA}$under coming 7059 glass substrate. We have fabricated a-SiN:H, conductor, etch-stopper and photo resistor on gate electrode in sequence, respectively. The thickness of these thin films is formed with a-SiN:H (2000 ${\mu}$m), a-Si:H(2000 ${\mu}$m) and n+a-Si:H (500 ${\mu}$m), We have deposited n-a-Si:H, NPR(Negative Photo Resister) layer after forming pattern of Cr gate electrode by etch-stopper pattern. The NPR layer by inverting pattern of upper gate electrode is patterned and the n+a-Si:H layer is etched by the NPR pattern. The NPR layer is removed. After Cr layer is deposited and patterned, the source-drain electrode is formed. In the fabricated TFT, the most frequent problems are over and under etching in etching process. We were able to improve properties of device by strict criterion on wet, dry etching and cleaning process.

• Journal of the Korean institute of surface engineering
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• v.33 no.2
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• pp.101-106
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• 2000

SOI (Silicon-On-Insulator) substrates were fabricated with varying annealing temperature of $25-660^{\circ}C$ by a linear annealing method, which was modified RTA process using a linear shape heat source. The annealing method was applied to Si ∥ $SiO_2$/Si pair pre-contacted at room temperature after wet cleaning process. The bonding strength of SOI substrates was measured by two methods of Razor-blade crack opening and direct tensile test. The fractured surfaces after direct tensile test were also investigated by the optical microscope as well as $\alpha$-STEP gauge. The interface bonding energy was 1140mJ/m$^2$ at the annealing temperature of $430^{\circ}C$. The fracture strength was about 21MPa at the temperature of $430^{\circ}C$. These mechanical properties were not reported with the conventional furnace annealing or rapid thermal annealing method at the temperature below $500^{\circ}C$. Our results imply that the bonded wafer pair could endure CMP (Chemo-Mechanical Polishing) or Lapping process without debonding, fracture or dopant redistribution.

• Journal of the Korea Academia-Industrial cooperation Society
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• v.6 no.3
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• pp.273-277
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• 2005

We prepared $0.25\~l.5um$ poly silicon gate array test group with $SiO_2$ spacers in order to employ NiCo composite salicide process from 15nm Ni/15nm Co/poly structure. We investigate the residual metal shape evolution by varying the rapid thermal silicide anneal temperature from $700^{\circ}C\;to\;1100^{\circ}C$. We observed the residual metals agglomerated into maze type and line type on $SiO_2$ field and silicide gate, respectively as temperature increased. We propose that lower silicide temperature would be favorable in newly proposed NiCo salicide in order to lessen the agglomeration causing the leakage and scum formation.

• Journal of the Korean Society of Marine Environment & Safety
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• v.27 no.6
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• pp.898-904
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• 2021

This experimental study aims to investigate the use of a wet electrostatic precipitator as a post-treatment device to satisfy the strict emission regulations for sulfur oxides and particulate matter (PM). The inlet/outlet of a wet electrostatic precipitator was installed in a funnel using a marine four-stroke diesel engine (STX-MAN B&W) consuming marine heavy fuel oil (HFO) with a sulfur content of about 2.1%. Measurements were then obtained at the outlet of the wet electrostatic precipitator; an optical measuring instrument (OPA-102), and the weight concentration measurement method (Method 5 Isokinetic Train) were used for the PM measurements and the Fourier transform infrared (FT-IR; DX-4000) approach was used for the sulfur oxide measurements. The experimenst were conducted by varying the engine load from 50%, to 75% and 100%; it was noted that the PM reduction efficiency was a high at about 94 to 98% under all load conditions. Additionally, during the process of lowering the exhaust gas temperature in the quenching zone of the wet electrostatic precipitator, the sulfur dioxide (SO₂) values reduced because of the cleaning water, and the reduction rate was confirmed to be 55% to 81% depending on the engine load.