• 한국의류학회지
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• 제37권3호
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• pp.348-356
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• 2013

Denim washing is processed with different washing techniques such as stone washing, chemical washing, sand washing, and bio washing. Cellulase bio washing can meet environmental regulations that enhance and rectify problems associated with traditional decolorization techniques; however, stone washing needs to be added to the processing because it produces a low decolorization effect. There is also the problem of additional strength reduction. To prevent these problems, a new enzyme for bio washing is required. This study examines the optimum laccase treatment conditions on denim and evaluated the characteristics of laccase-treated denims to establish a database of eco-friendly new decolorization process on denim using a new laccase enzyme. The results show that the optimum conditions of laccase on denim are a pH of 4.0, $30^{\circ}C$, 7% (o.w.f.), and 6 hours in 10 mM of buffer concentration. UV absorbance and HPLC identified isatin coexist with anthranilic acid in solution after laccase treatment on denim. Results of the surface color, the surface morphology and the tensile strength indicate that laccase treatment shows an excellent decolorization effect without fiber damage. The wet cleaning fastness and the perspiration fastness also improved.

• 한국농공학회지
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• 제45권2호
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• pp.107-115
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• 2003

Dairy manure amended with crop and forest residues (moisture 69% wet basis, C/N 22) was composted in a 605 L pilot-scale vessel using continuous air flow (56 L/min) for 19 days. Three pilot-scale sawdust biofilters (moisture 63%, pH 5.0) were built to clean biological waste gas from the composting process. For each methods, two replicated experiments were monitored over a period of three weeks. The system was evaluated to determine the biofilter media depth that would be adequate for compost odour reduction. The compost air cleaning was measured based on ammonia gas concentration before and after passing through the biofilter. Ammonia gas removal efficiency over 3 weeks was 42, 75 and 87% at sawdust biofilter media depth levels of 202, 400 and 600 mm, respectively. Each sawdust biofilter was operated at a moisture content in the range of 60~62% (wb), a temperature from 15 to $25^{\circ}C$, an average pressure drop from 240 to 340 Pa and a detention time from 60 to 180 seconds during the biofiltration process.

• 한국막학회:학술대회논문집
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• 한국막학회 1996년도 제4회 하계분리막 Workshop (초순수 제조와 막분리 공정)
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• pp.149-153
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• 1996

반도체 소자 제조 공정이 고 집적화 됨에 따라 습식 세정방법에 의한 세정공정의 중요성이 더욱 증가 되어지고 있으며, 특히 그 중에서 전체 세정공정의 약 절반을 차지하고 있는 Deionised water에 의한 rinsing 공정의 경우 ultrapure water의 quality가 최근 지속적으로 향상이 되어짐에 따라 많은 발전을 자져 왔다. 일반적으로 Deionised water에 함유하고 있는 TOC(total oxidisable components), bacteria, metallic impurity, desolved oxygen cencentration, colloidal material impurity (예를 들면 Silica, oraganic substrate)등은 ultra pure water의 quality를 결정하는데 매우 중요한 factor로 작용하고 있으며, 이러한 불순물들이 반도체 제조공정중 wafer surface에 흡착되어 졌을때 여러형태의 defect들을 유발한다고 알려져 있다. 그러나 pseudommonas, flavobacterlum, alcaligene등의 기 얄려진 bacteria들의 경우 Deionised water를 supply해주는 배관의 Inner surface에 잘 흡착 되지만 고온의 water 혹은 과산화수소수($H_{2}O_{2}$) 를 이용하여 주기적으로 처리 해줌으로 인하여 이에 대한 문제점을 어느정도 최소화 시킬수 있다. 위의 두가지 방법중 전자의 경우 chemical을 사용하지 않고, 유지 및 관리가 간편하며, 용존산소량을 줄일수 있다는 점에서 장점이 있으나, 전 ultra pure water의 system이 열적으로 안정해야 하고 경제적인 문제가 수반하는 단점을 가지고 있다. 후자의 경우, 미량의 과산화수소수 (1~10,000 ppm)를 이용해 처리 해주는 방법의 경우 경제적으로 큰 장점이 있고, 처리가 단순하다는 장점이 있으나 과산화수소수 자체에 포함하고 있는 높은 impurit level, 그리고 처리후 장시간의 flushing time을 가져야 한다는 단점등이 존재 하고 있다.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2013년도 제45회 하계 정기학술대회 초록집
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• pp.299.2-299.2
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• 2013

We investigated the potassium remaining on a crystalline silicon solar cell after potassium hydroxide (KOH) etching and its effect on the lifetime of the solar cell. KOH etching is generally used to remove the saw damage caused by cutting a Si ingot; it can also be used to etch the rear side of a textured crystalline silicon solar cell before atomic layer-deposited Al2O3 growth. However, the potassium remaining after KOH etching is known to be detrimental to the efficiency of Si solar cells. In this study, we etched a crystalline silicon solar cell in three ways in order to determine the effect of the potassium remnant on the efficiency of Si solar cells. After KOH etching, KOH and tetramethylammonium hydroxide (TMAH) were used to etch the rear side of a crystalline silicon solar cell. To passivate the rear side, an Al2O3 layer was deposited by atomic layer deposition (ALD). After ALD Al2O3 growth on the KOH-etched Si surface, we measured the lifetime of the solar cell by quasi steady-state photoconductance (QSSPC, Sinton WCT-120) to analyze how effectively the Al2O3 layer passivated the interface of the Al2O3 layer and the Si surface. Secondary ion mass spectroscopy (SIMS) was also used to measure how much potassium remained on the surface of the Si wafer and at the interface of the Al2O3 layer and the Si surface after KOH etching and wet cleaning.

• 한국재료학회지
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• 제6권4호
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• pp.379-387
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• 1996

본 연구에서는 GaAs 소자제작 및 epi-layer 성장 공정에 있어 이용되어지는 HCI, H3PO4, 탈이온수(de-ionized water:DIW)를 통한 습식제정후 공기중 노출에 따른 오염을 최소화하여 표면상태 변화를 진성적(intrinsic)으로 관찰하고자 모든 세정처리를 아르곤 가스(argon gas)로 분위기가 유지되는 glove box에서 수행하였으며, 표면조성 및 결합상태 변화에 대한 관찰은 X-선 광전자 분광기(X-ray photoelectron spectroscopy)를 통해 이루어졌다. 고진공하에서 GaAs를 벽개하여 관찰함으로써 Ga이 대기중 산소이온과 우선적으로 결합함을 알 수 있었고, 이런 GaAs 표면의 반응성에 대한 고찰을 바탕으로 습식세정에 따른 화학반응 기구가 제시 되어졌다. HCI 및 H3PO4/DIW/HCI처리후 CI-이온의 Ga 이온과의 반응에 의한 Ga-CI결합의 형성과 As 산화물의 높은 용해도에 따른 As 산화물의 완전한 제거 및 식각전 초기(bare)GaAsvyaus에 존재하는 원소(elemental)As 상태의 식각후 잔류가 관찰되어졌다. 또 HCI, H3PO4/DIW/HCI 처리하고 DIW로 세척후 표면상태 변화를 관찰한 결과, DIW처리에 의해 elemental As 상태가 증가함을 알 수 있었다.

• 한국표면공학회지
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• 제32권3호
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• pp.389-392
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• 1999

We employed cobalt-disilicide for high-speed logic devices. We prepared stable and low resistant $CoSi_2$ through typical fabrication process including wet cleaning and rapid thermal process (RTP). We sputtered 15nm thick cobalt on the wafer and performed RTP annealing 2 times to obtain 60nm thick $CoSi_2$. We observed spherical shape voids with diameter of 40nm in the surface and inside $CoSi_2$ layers. The voids resulted in taking over abnormal junction leakage current and contact resistance values. We report that the voids in $CoSi_2$ layers are resulted from surface pits during the ion implantation previous to deposit cobalt layer. Silicide reaction rate around pits was enhanced due to Gibbs-Thompson effects and the volume expansion of the silicidation of the flat active regime trapped dimples. We confirmed that keeping the buffer oxide layer during ion implantation and annealing the silicon surface after ion implantation were required to prevent void defects in CoSi$_2$ layers.

• 한국표면공학회지
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• 제32권3호
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• pp.428-432
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• 1999

As metallic surface has its unique lustrous appearance and optical reflectance in visible range of light, the metallization of plastic surface has been an essential drive toward weight reduction for fuel economy and decorations in transportation industry and has been put into practiced from wet chemical-electrochemial to dry vacuum process in view of an environmental effect. Electron-beam metallization was used in this work with an aim at improving the scratchproof surface hardness of plastic substrate with metallic finish character. Thin film of Al ($1000\AA$) and $SiO_2$($7000\AA$) were metallized on substrate of PC and PMMA and the films were evaluated by pencil test for surface hardness and by cross-cut tape test for adhesion. The ion beam treatment improved around twice as hard as non-treat surface. The ion beam is effect on its hardness and adhesion to surface hardened PC substrate.

• Journal of Industrial and Engineering Chemistry
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• 제68권
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• pp.387-392
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• 2018

Various technical approaches and concepts have been proposed to develop conductive super-hydrophobic (SH) surfaces. However, most of these approaches are not usable in practical applications because of insufficient adhesion and cost issues. Additionally, durability and uniformity issues are still in need of improvement. The goal of this research is to produce a large-area conductive SH surface with improved adhesion performance and uniformity. To this end, carbon nanotubes (CNT) with a high aspect ratio and elastomeric polymer were utilized as a conductive filler and matrix, respectively, to form a coating layer. Additionally, nanoscale silica particles were utilized for stable implementation of the conductive SH surface. To improve the adhesion properties between the SH coating layer and substrate, pretreatment of the substrate was conducted by utilizing both wet and dry etching processes to create specific organic functional groups on the substrate. Following pretreatment of the surface, a zirco-aluminate coupling agent was utilized to enhance adhesion properties between the substrate and the SH coating layer. Raman spectroscopy revealed that adhesion was greatly improved by the formation of a chemical bond between the substrate and the SH coating layer at an optimal coupling agent concentration. The developed conductive SH coating attained a high electromagnetic interference (EMI) shielding effectiveness, which is advantageous in self-cleaning EMI shielding applications.

• 도시과학
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• 제11권1호
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• pp.29-35
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• 2022

Waste to Energy Plant were recognized as hateful facilities, and there were many conflicts in the location due to social problems such as the NIMBY phenomenon due to problems such as damage to property in the surrounding area, odor, and image loss. Problems such as air pollution and odor are solved by the development of advanced prevention facilities such as electric dust collectors, wet cleaning systems, semi-dry reaction towers, bag filters, and catalyst towers (SCR: Selective Catalytic Reduction), and air recycling facilities in waste storage tanks. However, it is being avoided because of the perception that it is an incinerator. To resolve these conflicts, the government installs and operates resident convenience facilities to compensate residents near resource recovery facilities, provides green space and improves the environment, and supports heating expenses in accordance with the 「Waste Treatment Facility Support Act」. The purpose of this study is to derive implications through the analysis of domestic and overseas case studies for resident convenience facilities and environment improvement for the promotion of local communities in resource recovery facilities and use them as basic data for community promotion and environmental improvement when installing resource recovery facilities in the future.

• 한국정보통신학회논문지
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• 제13권7호
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• pp.1393-1398
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• 2009

본 연구는 LCD용 비정질 실리콘박막트랜지스터의 제조공정중 가장 중요한 식각 공정에서 각 박막의 특성에 맞는 습식 및 건식식각공정을 개발하여 소자의 특성을 안정시키고자 한다. 본 연구의 수소화 된 비정질 실리콘 박막 트랜지스터는 Inverted Staggered 형태로 게이트 전극이 하부에 있다. 실험 방법은 게이트전극, 절연층, 전도층, 에치스토퍼 및 포토레지스터층을 연속 증착한다. 스토퍼층을 게이트 전극의 패턴으로 남기고, 그 위에 n+a-Si:H 층 및 NPR(Negative Photo Resister)을 형성시킨다. 상부 게이트 전극과 반대의 패턴으로 NPR층을 패터닝하여 그것을 마스크로 상부 n+a-Si:H 층을 식각하고, 남아있는 NPR층을 제거 한다. 그 위 에 Cr층을 증착한 후 패터닝 하여 소오스-드레인 전극을 위한 Cr층을 형성시켜 박막 트랜지스터를 제조한다. 여기서 각 박막의 패터닝은 식각 공정으로 각단위 박막의 특성에 맞는 건식 및 습식식각 공정이 필요하다. 제조한 박막 트랜지스터에서 가장 흔히 발생되는 문제는 주로 식각 공정시 over 및 under etching 이며, 정확한 식각을 위하여 각 박막에 맞는 식각공정을 개발하여 소자의 최적 특성을 제공하고자한다. 이와 같이 공정에 보다 엄격한 기준의 건식 및 습식식각 공정 그리고 세척 등의 처리공정을 정밀하게 실시하여 소자의 특성을 확실히 개선 할 수 있었다.