• Bulletin of the Korean Chemical Society
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• 제35권12호
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• pp.3465-3474
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• 2014

Porous silica particles are the most prevailing raw material for stationary phases of liquid chromatography. During a long period of time, various methodologies for production of porous silica particles have been proposed, such as crashing and sieving of xerogel, traditional dry or wet process preparation of conventional spherical particles, preparation of hierarchical mesoporous particles by template-mediated pore formation, repeated formation of a thin layer of porous silica upon nonporous silica core (core-shell particles), and formation of specific silica monolith followed by grinding and calcination. Recent developments and applications of useful porous silica particles will be covered in this review. Discussion on sub-$3{\mu}m$ silica particles including nonporous silica particles, carbon or metal oxide clad silica particles, and molecularly imprinted silica particles, will also be included. Next, the individual preparation methods and their feasibilities will be collectively and critically compared and evaluated, being followed by conclusive remarks and future perspectives.

• 한국대기환경학회지
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• 제16권2호
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• pp.199-208
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• 2000

In this study we investigated on the possibility of platinum and silver catalysts as de-NOx catalyst for activity test of supported metal oxide catalysts. the study was performed with the change of amount of metal and support types. The catalyst was prepared the activity of alumina supported silver catalyst produced by dry and wet impregnation method respectively and the resistance of sulfur for optimum supported silver catalyst,. As a result the activity of alumina supported platinum catalyst was showed at low temperature region but the case of silver catalyst activated at high temperature region. So we finally chose alumina supported silver catalyst as de-NOx target catalyst because alumina supported catalyst showed higher activity than alumina supported platinum catalyst.

• 한국세라믹학회지
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• 제53권5호
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• pp.541-547
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• 2016

In developing high temperature molds with advantages of the sand and precision (investment) castings, mechanical properties of the mold were improved through homogeneous coating of starting powders with an inorganic binder and improvement of fabrication process. Beads with mullite composition were employed for properties of the mold under high temperature, which was compared with artificial sands. Precursors of silica and sodium oxide were used as starting materials for an inorganic binder to achieve homogeneous coating on the starting powders. Strength was enhanced by the glass phase converted from the inorganic binder through heat treatment process. Also, two kinds of process, wet and dry processes, were incorporated to prepare mold specimens. Consequently, fabrication process of the mold with superior strength and high temperature applicability, compared with the previous molds for sand casting, could be suggested through control of the starting material and enhancement of the vitrification efficiency.

• 센서학회지
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• 제30권5호
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• pp.273-278
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• 2021

Here, we studied the change in the mechanical stiffness of a diaphragm according to the corrugation pattern. The diaphragm consists of a silicon oxide and nitride double layer; a corrugation pattern was formed by dry etching, and the diaphragm was released by wet etching. The fabrication of the thin film was verified using focused ion beam and scanning electron microscopy images. The mechanical stiffness of the diaphragm was obtained by measuring the surface vibration using a laser Doppler vibrometer while applying external sound pressure. Flat squares, diaphragms with square corrugations, and circular corrugation patterns were measured and compared. The stiffness of the diaphragm with a corrugation structure was found to be smaller than that without a corrugation structure; in particular, circular corrugation showed a better effect because of the high symmetry. Furthermore, the effect of corrugation was theoretically predicted. The proposed corrugated diaphragm showed comparable flexibility with the state-of-the-art MEMS microphone diaphragm.

• 한국전자통신학회논문지
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• 제17권6호
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• pp.1175-1180
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• 2022

STI는 반도체 소자의 소형화 및 고집적화에 따른 광역 평탄화를 위한 공정 기술로써 많은 연구가 이루어져 왔다. 본 연구에서는 STI의 profile 개선을 위한 방법으로 STI 건식각 후 HF 용액에 의한 pad oxide 습식각과 O₂+CF₄ 건식각을 제안하였다. 이 공정 기술은 기존의 방법보다 소자의 밀집도에 따른 패턴간의 프로파일 불균형과 누설전류의 개선을 나타내었다. 또한 동일한 STI 깊이와 HLD 증착를 갖는 디바이스에 대하여 CMP 후 HLD 두께를 측정한 결과 디바이스 밀도에 따라 측정값이 다르게 나타났고 이는 CMP 후 디바이스 밀도에 따른 질화막의 두께 차이 및 슬러리의 선택비에 기인됨을 확인하였다.

• Journal of Periodontal and Implant Science
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• 제32권3호
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• pp.615-630
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• 2002

Various long-term studies have shown that titanium implants as abutments for different types of prostheses have become a predictable adjunct in the treatment of partially or fully edentulous patients. The continuous exposure of dental implants to the oral cavity with all its possible contaminants creates a problem. A lack of attachment, together with or caused by bacterial insult, may lead to peri-implantitis and eventual implant failure. Removal of plaque and calculus deposits from dental titanium implants with procedures and instruments originally made for cleaning natural teeth or roots may cause major alterations of the delicate titanium oxide layer. Therefore, the ultimate goal of a cleaning procedure should be to remove the contaminants and restore the elemental composition of the surface oxide without changing the surface topography and harming the surrounding tissues. Among many chemical and mechanical procedure, air-powder abrasive have been known to be most effective for cleaning and detoxification of implant surface. Most of published studies show that the dental laser may be useful in the treatment of pen-implantitis. $CO_2$ laser and Soft Diode laser were reported to kill bacteria of implant surface. The purpose of this study was to obtain clinical guide by application these laser to implant surface by means of Non-contact Surface profilometer and X-ray photoelectron spectroscopy(XPS) with respect to surface roughness and atomic composition. Experimental rough pure titanium cylinder models were fabricated. All of them was air-powder abraded for 1 minute and they were named control group. And then, the $CO_2$ laser treatment under dry, hydrogen peroxide and wet condition or the Soft Diode laser treatment under Toluidine blue O solution condition was performed on the each of the control models. The results were as follows: 1. Mean Surface roughness(Ra) of all experimental group was decreased than that of control group. But it wasn't statistically significant. 2. XPS analysis showed that in the all experimental group, titanium level were decreased, when compared with control group. 3. XPS analysis showed that the level of oxygen in the experimental group 1, 3($CO_2$ laser treatment under dry and wet condition) and 4(Soft Diode laser was used under toluidine blue O solution) were decreased, when compared with control group. 4. XPS analysis showed that the atomic composition of experimental group 2($CO_2$ laser treatment under hydrogen peroxide) was to be closest to that of control group than the other experimental group. From the result of this study, this may be concluded. Following air-powder abrasive treatment, the $CO_2$ laser in safe d-pulse mode and the Soft Diode laser used with photosensitizer would not change rough titanium surface roughness. Especially, $CO_2$ laser treatment under hydrogen peroxide gave the best results from elemental points of view, and can be used safely to treat peri-implantitis.

• 한국진공학회지
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• 제7권2호
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• pp.82-87
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• 1998

$O_2$기체에 $NH_3/O_2$기체를 첨가하여 실리콘 표면에 산화막을 형성하는 $NH_3/O_2$산화법 에 의한 산화공정시 반응석영관 외부에 방출하는 기체는 $N_2,O_2$및 $H_2O$이며 극소량의 $CO_2$, NO 및 $NO_2$가 검출되었다. 두 종류의 산화제($O_2$ 및 $H_2O$)가 산화에 기여하며 성장률은 $NH_3$및 $O_2$ 의 부분압과 온도에 의해 결정되며, 그 기울기는 건식 및 습식 산화법의 중간에 평행 하게 위치함을 확인하였다. Auger Electron Spectroscopy(AES) 측정결과 $NH_3/O_2$ 산화막은 정확한 $SiO_2$의 화학량론을 가지며 $SiO_2/Si$계면에 발생하는 결합을 억제하며 고정전하의 발 생을 최소화함을 알 수 있었다. $NH_3/O_2$ 산화막(470$\AA$)의 항복전압을 57.5Volt이며, C-V특성 곡선을 축정한 결과 플랫밴드 전압은 0.29Volt이며 곡선의 형태는 이상곡선과 일치하였다.

• 대한금속재료학회지
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• 제56권12호
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• pp.893-899
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• 2018

In the present study, we investigated the sulfur poisoning of the Ni anode in solid oxide fuel cells (SOFCs) as a function of operating conditions. Anode supported cells were fabricated, and sulfur poising tests were conducted as a function of current density, $H_2S$ concentration and humidity in the anode gas. The voltage drop was significant under the higher current density (${\sim}714mA/cm^2$) condition, while it was much reduced under the lower current density (${\sim}389mA/cm^2$) condition, at 100 ppm of $H_2S$. A secondary voltage drop, which occurred only at the high current density, was attributed to Ni oxidation in the anode. Thus, operation at high current density with high $H_2S$ concentration may lead to permanent deterioration in the anode. The effect of water content (10%) on the sulfur poisoning was also investigated through a constant current test (${\sim}500mA/cm^2$) at 10 ppm of $H_2S$. The cell operating with 10% wet anode gas showed a much smaller initial voltage drop, in comparison with a dry anode gas. The present study indicates that operating conditions, such as gas humidity and current density, should be carefully taken into account, especially when fuel cells are operated with $H_2S$ containing fuel.

• 한국결정성장학회지
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• 제11권5호
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• pp.224-230
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• 2001

초박막 게이트 유전막 및 비휘발성 기억소자의 게이트 유전막으로 연구되고 있는 $NO/N_2O$ 열처리된 재산화 질화산 화막의 특성을 D-SIMS(Dynamic Secondary Ion Mass Spectrometry), ToF-SIMS(Time-of-Flight Secondary Ion Mass Spectrometry), AES(Auger Electron Spectroscopy)으로 조사하였다. 시료는 초기산화막 공정후에 NO 및 $N_2O$ 열처리를 수행하였으며, 다시 재산화공정을 통하여 질화산화막내 질소의 재분포를 형성토록하였다. 재산화에 있어서 습식산화시 공정에 사용된 수소에 의한 영향으로 계면 근처에 축적된 질소가 Si≡N 결합을 쉽게 이탈함에 따라 방출이 촉진되어 건식산화에 비하여 질소의 감소가 더욱 두드러지게 나타났다. 재산화에 따른 질화산화막내 질소의 거동은 외부로의 방출과 기판으로의 확산이 동시에 나타난다. 재산화후 질화산화막내 축적된 질소의 결합종을 분석한 결과, 초기산화막 계면근처의 질소는 SiON의 결합종이 주도적으로 나타나는 반면 재산화 후 새롭게 형성된 $Si-SiO_2$ 계면근처로 확산한 질소는 $Si_2NO$ 결합종이 주로 검출된다. SiON에 의한 질소의 미결합손과 $Si_2$NO에 의한 실리콘의 미겨랍손은 기억특성에 기여하는 결함을 포함하기 때문에 재산화 질화산화막내 존재하는 SiON과 $Si_2$NO 결합종은 모두 전하트랩의 기원과 관련된 결합상태로 예상된다.

• 한국진공학회지
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• 제7권3호
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• pp.169-175
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• 1998

HBr/$Cl_2/He-O_2$ 반응 기체를 이용한 반응성 이온 식각후, 폴리실리콘 표면에 형성된 잔류막을 x-선 광전자 분광법(x-ray photoelectron spectroscopy, XPS)과 전자 현미경 (scanning electron mocroscopy, SEM)을 이용하여 관찰하였다. 그 결과 잔류물은 패턴된 폴 리실리콘의 맨 윗부분에 자존하고 있었으며, 화학 결합 상태는 실리콘 산화물임이 밝혀졌다. 잔류물인 실리콘 산화물의 형성 메카니즘을 규명하기 위하여 원래의 혼합 기체 성분중 한가 지씩의 반응 기체를 제외시켜 가면서 실험하였다. 비록 플라즈마 성질이 다를지라도, 잔류물 은 산소의 존재하에서 잘 형성됨을 알 수 있었는데, 이는 휘발성이 낮은 실리콘-할로겐 화 합물이 산소에 의해 산화됨으로써 형성되는 것으로 이해하게 되었다. 또한 반응성 이온 식 각후 형성된 잔류층은 소자의 전기적 특성과 후처리 공정에 영향을 미치는 것으로 알려져 있어서, 이를 제거하기 위해 습식과 건식 후처리 공정을 도입하여 비교하였다. 그 결과 건식 공정의 경우 기체에 의해 새로운 잔류물이 형성됨을 XPS를 통하여 관찰하였다. 따라서 잔 류물을 제거하고 깨끗한 표면을 얻기 위해서는 습식 공정이 더 적합함을 알았다.