• Proceedings of the Optical Society of Korea Conference
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• 2006.07a
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• pp.493-494
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• 2006

Fabrication-error tolerant directional couplers are designed and analyzed. In the wavelength region of $1.55{\mu}m$, the coupling characteristics of the 3dB coupler is 50${\pm}$4%, when the waveguide width error is ${\pm}0.2{\mu}m$.

• The Transactions of the Korean Institute of Electrical Engineers C
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• v.50 no.1
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• pp.6-10
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• 2001

In this study, we investigated the optical properties of sub-wavelength a-Si thin film transmission gratings, especially the polarization effect, the phase difference and the birefringence by using linearly polarized He-Ne laser beam (632.8nm). The a-Si transmission grating of the thickness $of < 0.1 \mum$ with four-type period($\Lambda = 0.4 \mum and 0.6 \mum$ for sub-wavelength and $\Lambda = 1.0 \mum and 1.4 \mum$ for above-wavelength) on quartz substrates have been fabricated using 50 KeV Ga+ Focused-Ion-Beam(FIB) Milling and $CF_4$Reactive-Ion-Etching(RIE) method. Finally, we obtained the trating array of a-Si thin film with a period $0.4 \mum, 0.6 \mum, 1.0 \mum, 1.4 \mum$ which have nearly equal finger spacing and width, sucessfully. Especially, for gratings with $\Lambda = 0.6 \mum(linewidth=0.25 \mum, linespace=0.35\mum), the \etamax at \theta_в=17.0^{\circ}$ is estimated to be 96%. As the results, we believe that the sub-wavelength grating arrayed a-Si thin film has the applicability as the optical device and components.

• Korean Journal of Optics and Photonics
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• v.10 no.3
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• pp.248-253
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• 1999

In this paper, we have investigated a fiber type active coupler which utilizes the mode coupling between the side polished single mode optical fiber and the active multimode planar waveguide. The proposed device can be used for not only tunable wavelength filter or optical intensity modulator but also a tool for measuring optical properties of guiding material such as refractive index, birefringence, electro-optic coefficient, and thermo-optic coefficient. We gave designed and optimized a coupler structure using the BPM and fabricated the device using thermo-optic polymer as active planar waveguide overlay. The device showed that insertion loss was less then 0.5 dB, extinction ratio was -13 dB at the resonance wavelength, and the wavelength tunablity due to thermo-optic effect was -1.5 nm/$^{\circ}C$. The active coupler using thermo-optic effect can be used as a wavelength tunable filer, an optical intensity modulator and an optical sensor. pulses that are subsequently compressed by a dispersive optical fiber. Experimental results show that $sech^2$ shape pulses with a pulse width of ~14 ps and a time bandwidth product of ~0.34 are successfully generated at 10 GHz repetition rate. In contrast to other methods, such as higher order soliton compression, this approach does not depend on the optical power and thus shows promise for application to low-power lasers.

• Journal of the Korean Society of Industry Convergence
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• v.23 no.4_2
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• pp.701-708
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• 2020

In this paper, we analyzed the optical properties of the LED module for dental care, which has the effect of promoting cell regeneration and scar treatment. The LED module is a U-shaped module suitable for the shape of teeth. It is manufactured with an LED module (632 nm) and an LED module (632 nm + 870 nm), analyzes the results of optical properties, sets the irradiation distance, irradiation time, and is effective in healing skin wounds. Evaluation was conducted. It was tested in 6 test groups according to the light irradiation conditions, and light was irradiated to the scar site every other day for 7 days, 1 day and 3 days. As a result, it was confirmed that the effect of scar treatment was the highest when the combined wavelength of 632 nm + 870 nm was irradiated in pulse mode than when the single wavelength was irradiated and the composite wavelength was continuously irradiated. In group C group irradiated with PW Mode: pulse mode (period 36 ms, pulse width 35 ms) using a composite wavelength with LED module (632 nm + 870 nm) than group A without light irradiation, the length of scar reduction was 19 %, the area of the scar was further reduced by 10%, and it was confirmed that it is effective in treating scars in the wound area.

• Laser Solutions
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• v.3 no.2
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• pp.35-43
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• 2000

Laser direct patterning of the coated photoresit (PMER-NSG31B) layer was studied to make halftone dots on gravure printing roll. The selective laser hardening of photoresist by Ar-ion laser(wavelength : 333.6nm∼363.8nm) was controlled by the A/O modulator. The coating thickness in the range of 5㎛∼11㎛ could be obtained by using the up-down directional moving device along the vertically located roll. The width, thickness and hardness of the hardened lines formed under laser power of 200∼260㎽ and irradiation time of 4.4∼6.6$\mu$ sec/point were investigated after developing. The hardened width increased according to the increase of coating thickness. Though the hardened thickness was changed due to the effect of the developing solution, the hardened layer showed good resistance to the scratching of 2H pencil. Also, the hardened minimum line widths of 10㎛ could be obtained. The change of line width was also found after etching, and the minimum line widths of 6㎛ could be obtained. The hardened lines showed the good resistance to the etching solution. Finally, the experimental data could be applied to make gravure halftone dots using the developed imaging process, successfully.

• Proceedings of the Korean Society of Laser Processing Conference
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• 2006.11a
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• pp.128-132
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• 2006

Low-k wafer engraving process has been investigated by using UV pico-second laser with high repetition rate. Wavelength and repetition rate of laser used in this study are 355nm and 80MHz, respectively. Main parameters of low-k wafer engraving processes are laser power, work speed, assist gas flow rate, and protective coating to eliminate debris. Results show that engraving qualities of low-k layer by using UV pico-second pulse width and high repetition rate had better kerf edge and higher work speed, compared to one by conventional laser with nano-second pulse width and low repetition rate in the range of kHz. Assist gas and protective coating to eliminate debris gave effects on the quality of engraving edge. Total engraving width and depth are obtained less than $20{\mu}m$ and $10{\mu}m$ at more than 500mm/sec work speed, respectively. We believe that engraving method by using UV pico-second laser with high repetition rate is useful one to give high work speed of laser material process.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.11a
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• pp.57-58
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• 2008

We have studied an organic layer and semitransparent Al electrode thickness dependent optical properties and microcavity effects for top-emission organic light-emitting diodes. Manufactured top-emission device structure is Al(100nm)/TPD(xnm)/Alq(ynm)/LiF(0.5nm)/Al(25nm). While a thickness of total organic layer was varied from 85nm to 165n, a ratio of those two layers was kept to be about 2:3. Semitransparent Al cathode was varied from 20nm to 30nm for the device with an organic layer total thickness of 140nm. As the thickness of total organic layer increases, the emission spectra show a shift of peak wavelength from 490nm to 580nm, and the full width at half maxima from 90nm to 35nm. The emission spectra show a blue shift as the view angle increases. Emission spectra depending on a transmittance of semitransparent cathode show a shift of peak wavelength from 515nm to 593nm. At this time, the full width at half maximum was about to be a constant of 50nm. With this kind of microcavity effect, we were able to control the emission spectra from the top-emission organic light-emitting diodes.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.06a
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• pp.413-414
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• 2008

We have studied an organic layer thickness dependent optical properties and microcavity effects for top-emission organic light-emitting diodes. Manufactured top emission device, structure is Al(100nm)ITPD(xnm)/$Alq_3$(ynm)/LiF(0.5nm)/Al(23nm). While a thickness of hole-transport layer of TPD was varied from 35 to 65nm, an emissive layer thickness of $Alq_3$ was varied from 50 to 100nm for two devices. A ratio of those two layers was kept to about 2:3. Variation of the layer thickness changes a traverse time of injected carriers across the organic layer, so that it may affect on the chance of probability of exciton formation. View-angle dependent emission spectra were measured for the optical measurements. Top-emission devices show that the emission peak wavelength shifts to longer wavelength as the organic layer thickness increases. For instance, it shifts from 490 to 555nm in the thickness range that we used. View-angle dependent emission spectra show that the emission intensity decreases as the view-angle increases. The organic layer thickness-dependent emission spectra show that the full width at half maximum decreases as the organic layer thickness increases. Top emission devices show that the full width at half maximum changes from 90 to 35nm as the organic layer thickness increases. In top-emission device, the microcavity effect is more vivid as the organic layer thickness increases.

• Journal of Navigation and Port Research
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• v.26 no.2
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• pp.235-243
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• 2002

Theoretical analysis have been performed to design the high power semiconductor laser for an optical sensor at 1.55${\mu}{\textrm}{m}$ wavelength range which is the lowest loss wavelength in optical fiber. The materials of active region and SCH were $Ln_{1-x}Ga_xAs_yP_{1-y}$. In order to use the light source of optical sensors, it has to satisfy wide spectral width and short coherence length. Therefore, in order to suppress lasing oscillation, we proposed laterally tilted PBH type with a window region. Also, tapered stripe structure was applied for high coupling efficiency into a single mode fiber. From these analyses, the devices of laterally tilted angled and bending structure were fabricated and their characteristics were measured. In the results of the measurement, the fabricated devices have sufficient output power and wide FWHM to apply to the light source of optical fiber sensors.

• Korean Journal of Optics and Photonics
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• v.32 no.2
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• pp.62-67
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• 2021

We have experimentally demonstrated sum-frequency generation (SFG) in a periodically poled lithium niobate (PPLN) crystal, using a mode-locked picosecond-pulsed fiber laser and a continuous-wave (CW) diode laser with a narrow linewidth. The mode-locked fiber laser had a center wavelength of 1560.7 nm and a spectral width of 1.1 nm, and the CW diode laser had a center wavelength of 1551.0 nm and a spectral width of 6 MHz. To effectively realize SFG, both of the spatial modes of the two lasers were made to overlap in the PPLN crystal by using a single-mode optical fiber. The pulse-mode SFG with pulsed- and CW-mode lasers was successfully observed in the spectral and time domains. These results are expected to be applicable in various ways, such as optical frequency measurement and high-resolution laser spectroscopy studies using optical frequency combs.