• 한국재료학회지
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• 제21권4호
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• pp.212-215
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• 2011

New organic light-emitting diodes with structure of indium-tin-oxide[ITO]/N,N'-diphenyl-N, N'-bis-[4-(phenyl-m-tolvlamino)-phenyl]-biphenyl-4,4'-diamine[DNTPD]/1,1-bis-(di-4-poly-aminophenyl) cyclohexane[TAPC]/bis(10-hydroxy-benzo(h)quinolinato)beryllium[Bebq2]/Bebq2:iridium(III)bis(2-phenylquinoline-N,C2')acetylacetonate[(pq)2Ir(acac)]/ET-137[electron transport material from SFC Co]/LiF/Al using the selective doping of 5%-(pq)2Ir(acac) in a single Bebq2 host in the two wavelength (green, orange) emitter formation were proposed and characterized. In the experiments, with a 300${\AA}$-thick undoped emitter of Bebq2, two kinds of devices with the doped emitter thicknesses of 20${\AA}$ and 40${\AA}$ in the Bebq2:(pq)2Ir(acac) were fabricated. The device with a 20${\AA}$-thick doped emitter is referred to as "D-1" and the device with a 4${\AA}$-thick doped emitter is referred to as "D-2". Under an applied voltage of 9V, the luminance of D-1 and D-2 were 7780 $cd/m^2$ and 6620 $cd/m^2$, respectively. The electroluminescent spectrum of each fabricated device showed peak emissions at the same two wavelengths: 508 nm and 596 nm. However, the relative intensity of 596 nm to 508 nm at those wavelengths was higher in the D-2 than in the D-1. The D-1 and D-2 devices showed maximum current efficiencies of 5.2 cd/A and 6.0 cd/A, and color coordinates of (0.31, 0.50) and (0.37, 0.48) on the Commission Internationale de I'Eclairage[CIE] chart, respectively.

• 반도체디스플레이기술학회지
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• 제10권1호
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• pp.23-26
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• 2011

New organic light-emitting diodes with structure of ITO/DNTPD/TAPC/$Bebq_2/Bebq_2$:RP-411/ET-137/LiF/Al using the selective doping of 5% RP-411 in a single $Bebq_2$ host in the two wavelength(green, red) emitter formation were proposed and characterized. In the experiments, with a 300${\AA}$-thick undoped emitter of $Bebq_2$, three kinds of devices with different thicknesses of 30${\AA}$, 40${\AA}$ and 50${\AA}$ in the doped emitter of $Bebq_2$:RP-411 were fabricated. The electroluminescent spectra showed two peak emissions at the same wavelengths of 511 nm and 622 nm for the fabricated devices. When the device with a 30${\AA}$-thick doped emitter is referred as "D-1", the device with a 40${\AA}$-thick doped emitter is referred as "D-2" and the device with a 50${\AA}$-thick doped emitter is referred as "D-3", the relative intensity of 622 nm to 511 nm at two wavelength peaks was higher in the D-2 and the D-3 than in the D-1. The devices of D-1, D-2 and D-3 showed the color coordinates of (0.43, 0.46), (0.46, 0.44) and (0.48, 0.43) on the CIE chart, respectively.

• 반도체디스플레이기술학회지
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• 제18권4호
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• pp.6-11
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• 2019

For a wider application of laser direct patterning, selective laser ablation of indium tin oxide (ITO) film on transparent oxide semiconductor (TOS) thin film was carried out using a diode-pumped Q-switched Nd:YVO₄ laser at a wavelength of 1064 nm. In case of the laser ablation of ITO on indium gallium zinc oxide (IGZO) film, both of ITO and IGZO films were fully etched for all the conditions of the laser beams even though IGZO monolayer was not ablated at the same laser beam condition. On the contrary, in case of the laser ablation of ITO on zinc oxide (ZnO) film, it was possible to etch ITO selectively with a slight damage on ZnO layer. The selective laser ablation is expected to be due to the different coefficient of thermal expansion (CTE) between ITO and ZnO.

• 한국태양에너지학회:학술대회논문집
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• 한국태양에너지학회 2011년도 추계학술발표대회 논문집
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• pp.56-59
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• 2011

The process conditions for high efficiency industrial crystalline Si solar cells with selective emitter were optimized. In the screen printed solar cells, the sheet resistance must be 50-60V/sq. because of metal contact resistance. But the low sheet resistance causes the increase of the recombination and blue response at the short wavelength. Therefore, the screen printed solar cells with homogeneous emitter have limitations of efficiency, and this means that the selective emitter must be used to improve cell efficiency. This work demonstrates the feasibility of a commercially available selective emitter process, based on screen printing and conventional diffusion process. Now, we improved cell efficiency from 18.29% to18.45% by transition of heavy emitter pattern and shallow emitter doping condition.

• 대한기계학회논문집A
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• 제28권11호
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• pp.1727-1732
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• 2004

A nickel layer was deposited onto the PZT thin films, serving both as a selective radiation absorption layer and as a top electrode. The absorption properties of such nickel coated multi-layered infrared detectors were studied in the visible and infrared wavelength ranges. The optimal thickness of the nickel layer on our substrate was 10nm. The maximum absorption coefficient of the deposited 10nm thick nickel layer was 0.7 at a 632nm wavelength. However, a striking asymmetric polarization hysteresis loop was observed in these PZT thin films with nickel as the top electrode. This asymmetric polarization was attributed to the difference between the dynamic pyroelectric responses in these Ni/PZT/Pt films poled either positively or negatively before the measurement. A positively poled film showed a 40% higher voltage response than a negatively poled detector.

• 한국레이저가공학회지
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• 제13권1호
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• pp.11-15
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• 2010

Indium tin oxide (ITO) provides high electrical conductivity and transparency in the visible and near IR (infrared) wavelengths. Thus, it is widely used as a transparent electrode for the fabrication of liquid crystal displays (LCDs) and organic light emitting diode displays (OLRDs), photovoltaic devices, and other optical applications. Lasers have been used for removing coating on polymer substrate for flexible display and electronic industry. In selective removal of ITO layer, laser wavelength, pulse energy, scan speed, and the repetition rate of pulses determine conditions, which are efficient for removal of ITO coating without affecting properties of the polymer substrate. ITO coating removal with a laser is more environmentally friendly than other conventional etching methods. In this paper, pattering of ITO film from polymer substrates is described. The Yb:KGW femtosecond laser processing system with a pulse duration of 250fs, a wavelength of 1030nm and a repetition rate of 100kHz was used for removing ITO coating in air. We can remove the ITO coating using a scanner system with various pulse energies and scan speeds. We observed that the amount of debris is minimal through an optical and a confocal microscope, and femtosecond laser pulses with 1030nm wavelength are effective to remove ITO coating without the polymer substrate ablation.

• KSBB Journal
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• 제16권6호
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• pp.609-613
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• 2001

형광을 이용하여 중금속 이온의 농도를 측정할 수 있는 신규 단백질 바이오센서를 제작하였다. 바이오센서의 transducer로 카제인과 알부민을 사용하였을 때 $10^{-3}$mM-1 mM 범위에서 중금속 농도 정량에 우수성을 보였다. 또한 두 가지 중금속 혼합물에서 excitation과 emission파장에서 형광도를 측정하여 각 중금속 이온 농도를 선택적으로 정량하는 방법을 제시하였고, Co$^{2+}$, Fe$^{3+}$ 이온 혼합물을 대상으로 본 논문에서 제시한 방법의 유효성을 입증하였다.

• 대한전자공학회논문지SD
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• 제38권7호
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• pp.486-492
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• 2001

본 논문에서는 중심파장과 대역폭을 자유롭게 조절할 수 있는 새로운 구조의 광 채널-선택형 필터를 제안하였다. 제안된 필터는 첩 광섬유 격자의 반사 스펙트럼을 조절하기 위해 사용되는 광섬유 신장기를 부착한 동일한 세 개의 첩 광섬유 격자를 사용하여 구성하였다 파장 다중화된 입력신호 중에서 임의의 채널을 선택할 수 있는 제안된 필터의 특성을 실험적으로 보였다.

• 대한전자공학회논문지TC
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• 제38권1호
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• pp.34-42
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• 2001

편파기 특성을 갖는 새로운 주파수 선택반사기의 새로운 주기적 배열 구조를 제시하였다. 배열 구조는 평면 유전체 슬랩의 양면에 도체 다이폴을 주기적으로 배열하고 윗면의 다이폴과 아래면의 다이폴은 서로 대략 $90^{\circ}$ 정도로 직교되며 유전체 두께는 유전율을 고려한 주파수 파장의 1/8정도이다. 산란 해석으로는 파수 영역 이미턴스방법과 모멘트 방법이 사용되었다. 제시한 새로운 주파수 선택반사기의 편파 변환 기능을 확인하기 위해 설계/제작하여 반사 손실과 투과 손실을 측정하였다. 측정 결과는 이론치와 매우 일치되었으며 반사시 선형 편파인 입사파가 원형 편파로 변환됨을 확인하였다.

• 대한전기학회:학술대회논문집
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• 대한전기학회 2001년도 하계학술대회 논문집 C
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• pp.1826-1828
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• 2001

본 논문에서는 주기적으로 홈을 새긴 V자 홈과 평판 사이에 광섬유를 놓고 압력을 인가함으로써 유도되는 파장가변 가능한 장주기 광섬유격자의 제작 및 특성에 대해서 살펴 보았다. 이러한 방식으로 제작된 장주기 광섬유격자의 투과특성 및 모드결합 특성은 기존의 장주기 광섬유격자와 유사한 특성을 보이면서도 모드결합이 일어나는 중심파장을 거의 180nm 이상으로 가변할 수 있었다.