• Journal of the Microelectronics and Packaging Society
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• v.6 no.4
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• pp.61-71
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• 1999

The recent trend toward higher frequencies, miniaturization and lower-cost in wireless communication equipment is demanding high density packaging technologies such flip chip interconnection and multichip module(MCM) as a substitute of conventional plastic package. With analyzing the recently reported research results of the RF flip chip, this paper presents the technical issues and advantages of RF flip chip and suggest the flip chip technologies suitable for the development stage. At first, most of RF flip chips are designed in a coplanar waveguide line instead of microstrip in order to achieve better electrical performance and to avoid the interaction with a substrate. Secondly, eliminating wafer back-side grinding, via formation, and back-side metallization enables the manufacturing cost to be reduced. Finally, the electrical performance of flip chip bonding is much better than that of plastic package and the flip chip interconnection is more suitable for Transmit/Receiver modules at higher frequency. However, the characterization of CPW designed RF flip chip must be thoroughly studied and the Au stud bump bonding shall be suggested at the earlier stage of RF flip chip development.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.13 no.5
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• pp.436-444
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• 2002

This paper presents a new method, which uses defected ground structure (DGS) on the ground planes of planar transmission lines such as microstrip and coplanar waveguide (CPW), to reduce the size of amplifiers. The main idea can be summarized as follow; DGS on the ground plane of microstrip or CPW line shows an increased slow-wave effect due to the additional equivalent L-C components. So the electrical length of the transmission line with DGS is longer than that of the standard transmission line for the same physical length. Then, the length of the transmission line with DGS can be shortened in order to maintain the original electrical length to be the same. This leads the matching of the original amplifier to be kept. In order to show the proposed method is valid, two kinds of amplifiers, the original amplifier and reduced amplifier, are fabricated, measured, and compared using both microstrip and CPW. The measured performances of the reduced amplifiers with DGS are quite similar to the ones of the original amplifiers for both microstrip and CPW amplifiers, even though the size of matching networks of the amplifiers with DGS are much smaller than those of the original amplifiers.

• Proceedings of the KIEE Conference
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• 2009.07a
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• pp.1509_1510
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• 2009

This paper presents the design and simulation results of ohmic contact RF MEMS silicon switch with a high isolation at high frequencies along with the position of a contact part, initial off-state and intermediate off-state including the state where a contact part is placed right over a signal line of coplanar waveguide (CPW). The ohmic contact part is connected with comb drives made of high resistivity single crystalline silicon. The released contact part is $30{\mu}m$ apart from the edge of signal line on the glass substrate along the lateral direction (x-direction) at initial off-state. The electrostatic force of the comb electrode creates the x-directional movement thus initial state is converted to the intermediate off-state. The initial off-state of the switch results in isolations of -31 dB, -24 dB and reflections of -0.45 dB, -0.67 dB at 50 GHz and 110 GHz, respectively. It shows the isolation degradation when the contact part moves right over the signal line of CPW like an initial off-state of a conventional MEMS switch. The isolations and reflections are -31 dB, -24 dB and -0.50 dB, -1.31 dB at 50 GHz and 110 GHz, respectively at the intermediate off-state.

• Journal of the Institute of Electronics Engineers of Korea TC
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• v.42 no.1
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• pp.119-123
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• 2005

In this paper. It is proposed and fabricated that the new antenna of dual T type structure is shifted easily center frequency. This antenna consists of dual dipoles resemblance to dual T type, which are fed by a coplanar waveguide (CPW) on signal plane. The analyzed and measured characteristic of new antenna is controled between distance of two dipoles for shifting center frequency. The proposed antenna is 450MHz bandwidth for using IMT2000 band. The characteristic parameters of the proposed antenna are analyzed by using a FDTD methods.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.45 no.4
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• pp.1-6
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• 2008

In this paper, millimeter-wave broadband MHEMT (Metamorphic High Electron Mobility Transistor) cascode amplifiers were designed and fabricated. The $0.1{\mu}m$ InGaAs/InAlAs/GaAs MHEMT was fabricated for cascode amplifiers. The DC characteristics of MHEMT are 670 mA/mm of drain current density, 588 mS/mm of maximum transconductance. The current gain cut-off frequency($f_T$) is 139 GHz and the maximum oscillation frequency($f_{max}$) is 266 GHz. To prevent oscillation of the designed cascode amplifiers, a parallel resistor and capacitor were connected to the drain of common gate device. By using the CPW (Coplanar Waveguide) transmission line, the cascode amplifier was designed and matched for the broadband characteristics. The designed amplifier was fabricated by the MHEMT MMIC process that was developed through this research. As the results of measurement, the amplifier was obtained 3 dB bandwidth of 50.37 GHz between 20.76 to 71.13 GHz. Also, this amplifier represents the S21 gain with the average 7.07 dB gain in bandwidth and the maximum gain of 10.3 dB at 30 GHz.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.23 no.3
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• pp.292-299
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• 2012

This paper proposes the design of circularly polarized multi band antenna for a non-linear junction detector (NLJD) system. In order to design for broad bandwidth, the CPW (Co-Planar Waveguide) feeding method is considered in this design. In order to realize the circular polarization, the axial ratio was controlled by inserting a $45^{\circ}$ inclined slot on radiating element and by cutting an edge of the radiating patch. Measurement results of return loss, bandwidth, axial ratio, polarization pattern and gain are agreed well with their simulation results in interested frequency band at 2.4~ 2.44 GHz, 4.84~4.92 GHz, and 7.28~7.32 GHz.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.19 no.10
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• pp.1086-1095
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• 2008

In this paper, we designed and fabricated the trapezoidal antenna using the CPWG structure for Wibro and WLAN communications. This antenna has broadband characteristics using the basic trapezoidal antenna, and an H-shaped parasitic patch is making an expansion of resonance bandwidth and bringing stability of impedance matching. Especially, CPWG structure is combined two kinds of the structure which of a monopole antenna and a coplanar waveguide antenna. They make up for the weak point of the CPW which is variation of impedance matching according to varying the gap or size of the feed line and the ground. The designed antenna has occurred resonances of which the band of 2.2 GHz to 4.6 GHz(70.5 %) below the return loss of -10 dB($VSWR{\leq}2$) obtained in measurement, and it has an omnidirectional radiation pattern of H-plane. In addition, the changes of impedance matching appear slightly caused by the effects of the ground plane and the feed line.

• Journal of the Institute of Electronics Engineers of Korea TC
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• v.44 no.7 s.361
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• pp.105-111
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• 2007

In this paper, we designed and fabricated a 3-dB tandem coupler using air-bridge technology for millimeter-wane monolithic integrated circuits, operating at W-band($75{\sim}110\;GHz$) frequency. Tightly edge-coupled CPW line has low directivity due to different even-mode and odd-mode phase velocity. To overcome this disadvantage, a 3-dB tandem coupler which comprises the two-sectional weakly parallel-coupled lines with equal phase velocity was designed at W-band. The proposed coupler was fabricated using air-bridge technology to monolithically materialize the uniplanar coupler structure instead of conventional multilayer or wire bonded structure. From the measurements, the coupling coefficient of $2.9{\sim}3.6\;dB$ and the good phase difference of $91.2{\pm}2.9^{\circ}$ were obtained in broad frequency range of $75{\sim}100\;GHz$.

• Journal of Advanced Marine Engineering and Technology
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• v.38 no.1
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• pp.70-77
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• 2014

In this work, we studied basic characteristics of transmission lines employing various PSS (periodic strip structure) on silicon substrate for application to a miniaturization of RF components. According to the results, the transmission lines employing various PSS showed wavelength shorter than conventional coplanar waveguide due to their strong wave characteristics. Especially, with-contact structure was most effective for a miniaturization of RF component. Concretely, the size of the transmission line employing with-contact was only 4.39 % of the conventional coplanar waveguide, According to the bandwidth extraction result, the bandwidth of the transmission lines employing various PSS structures were wider than 384 GHz. Above results indicate that the transmission lines employing various PSS can be effectively used for application to a broadband and miniature RF component, and especially, with-contact is most effective for a miniaturization of RF components.

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 2018.05a
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• pp.57-58
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• 2018

In this paper, we studied a design method for a quasi-Yagi antenna operating over a broad bandwidth covering the UHF RFID(902-928 MHz) and GNSS(1,164-1.605 MHz). The proposed antenna is composed of three elements(dipole, reflector, and director) and fed by a coplanar waveguide. To reduce its size, a balun is integrated inside the antenna, and the ends of both the dipole and reflector are bent. Broadband impedance matching was obtained by placing the director near to the dipole and loading a chip capacitor inside the antenna. The antenna, designed through simulations, was fabricated on an FR4 substrate with 0.8 mm thickness. The experiment results for the antenna characteristics agree very well with the simulation.