• Proceedings of the KIEE Conference
• /
• 2002.07c
• /
• pp.2020-2022
• /
• 2002

SiC direct bonding technology is very attractive for both SiCOI(SiC-on-insulator) electric devices and SiC-MEMS fileds because of its application possibility in harsh environements. This paper presents on pre-bonding according to HF pre-treatment conditions in SiC wafer direct bonding using PECVD oxide. The PECVD oxide was characterized by XPS and AFM, respectively. The characteristics of bonded sample were measured under different bonding conditions of HF concentration and applied pressure, respectively. The bonding strength was evaluated by tensile strength method. Components existed in the interlayer were analyzed by using FT-IR. The bond strength depends on the HF pre-treatment condition before pre-bonding (Min : 5.3 kgf/$cm^2{\sim}$ Max : 15.5 kgf/$cm^2$).

• Proceedings of the KSME Conference
• /
• 2001.06e
• /
• pp.169-174
• /
• 2001

This paper reports on the development of high aspect ratio structure and 3-D integrated process for MEMS-based micro gas turbines. To manufacture high aspect ratio structures, Deep Reactive Ion Etching (DRIE) process have been developed and optimized. Specially, in this study, structures with aspect ratios greater than 10 were fabricated. Also, wafer direct bonding and Infra-Red (IR) camera bonding inspection systems have been developed. Moreover, using glass/silicon wafer direct bonding, we optimized the 3-D integrated process.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2001.07a
• /
• pp.447-450
• /
• 2001

Abstract-Si direct bonding(SDB) technology is very attractive for both Si-on-insulator(SOI) electric devices and MEMS applications because of its stress free structure and stability. This paper presents on pre-bonding according to HF pre-treatment conditions in Si wafer direct bonding. The characteristics of bonded sample were measured under different bonding conditions of HF concentration, and applied pressure. The bonding strength was evaluated by tensile strength method. The bonded interface and the void were analyzed by using SEM and IR camera, respectively. Components existed in the interlayer were analysed by using FT-lR. The bond strength depends on the HF pre-treatment condition before pre-bonding (Min : 2.4kgf/cm$^2$∼Max : 14.9kgf/cm$^2$).

• Korean Journal of Materials Research
• /
• v.11 no.3
• /
• pp.159-163
• /
• 2001

The success of SDB (silicon wafer direct bonding) technology can be estabilished by bonding on the bonded interface with no defects and Preventing temperature dependent bubbles. In this research, we observed the behavior of the intrinsic bubbles by transmitting the infrared light and the increase of the bubble pressure was found. And, the $SiO_2$-$SiO_2$ bonded wafer was achieved, which generates no intrinsic bubbles in the annealing under the atmospheric pressure. The intrinsic bubbles in the $SiO_2$-$SiO_2$ bonded wafer were generated in the annealing in the ultra high vacuum. This experimental result shows the relation between the bubble growth and the pressure.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
• /
• v.30 no.10
• /
• pp.615-624
• /
• 2017

This study investigated the various physical and electrical effects of silicon direct bonding. Direct bonding means the joining of two wafers together without an intermediate layer. If the surfaces are flat, and made clean and smooth using HF treatment to remove the native oxide layer, they can stick together when brought into contact and form a weak bond depending on the physical forces at room temperature. An IR camera and acoustic systems were used to analyze the voids and bonding conditions in an interface layer during bonding experiments. The I-V and C-V characteristics are also reported herein. The capacitance values for a range of frequencies were measured using a LCR meter. Direct wafer bonding of silicon is a simple method to fuse two wafers together; however, it is difficult to achieve perfect bonding of the two wafers. The direct bonding technology can be used for MEMS and other applications in three-dimensional integrated circuits and special devices.

• Journal of Sensor Science and Technology
• /
• v.9 no.2
• /
• pp.134-140
• /
• 2000

Si wafer direct bonding(SDB) technology is very attractive for both Si-on-insulator(SOI) electronic devices and MEMS applications. This paper presents on pre-bonding according to HF pre-treatment conditions in Si wafer direct bonding. The characteristics of bonded sample were measured under different bonding conditions of HF concentration and applied pressure. The bonding strength was evaluated by tensile strength method. A bond characteristic on the interface was analyzed by using FT-IR, and surface roughness according to HF concentration was analyzed by AFM. Si-F bonds on Si surface after HF pre-treatment are replaced by Si-OH during a DI water rinse. Consequently, hydrophobic wafer was bonded by hydrogen bonding of Si-OH$\cdots$(HOH$\cdots$HOH$\cdots$HOH)$\cdots$OH-Si. The pre-bonding strength depends on the HF pre-treatment condition before pre-bonding. (Min : $2.4kgf/cm^2{\sim}$Max : $14.9kgf/cm^2$)

• Journal of Magnetics
• /
• v.10 no.2
• /
• pp.41-43
• /
• 2005

We have investigated an optical waveguide isolator with a multimode interference section by wafer direct bonding, operating at a wavelength $1.55\;{\mu}m$. In order to fabricate the device for monolithic integration, the wafer direct bonding between a magnetic garnet material as a cladding layer and a semiconductor guiding layer has been achieved. We found that wafer direct bonding between InP and GGG $(Gd_3Ga_5O_{12})$ is effective for the integration of a waveguide optical isolator. The isolation ratio was obtained to be 2.9 dB in the device.

• Proceedings of the Korean Magnestics Society Conference
• /
• 2004.12a
• /
• pp.175-176
• /
• 2004

An integrated waveguide optical isolator by wafer direct bonding has been studied. The isolation ratio was found to be 2.9dB in our device. We found that wafer direct bonding between the InP and GGG is effective for the integration of a waveguide optical isolator.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 1998.06a
• /
• pp.411-414
• /
• 1998

In this paper, the silicon-nitride membrane structure for IR sensor was fabricated through the etching and the direct bonding. The PT layer as a IR detection layer was deposited on the membrane and its characteristics were measured. The attack of PT layer during the etching of silicon wafer as well as the thermal isolation of the IR detection layer can be solved through the method of bonding/etching of silicon wafer. Because the PT layer of c-axial orientation rained thermal polarization without polling, the more integration capability can be achieved. The surface roughness of the membrane was measured by AFM, the micro voids and the non-contacted area were inspected by IR detector, and the bonding interface was observed by SEM. The polarization characteristics and the dielectric characteristics of the PT layer were measured, too.

• Korean Journal of Materials Research
• /
• v.14 no.5
• /
• pp.315-321
• /
• 2004

The void evolution in direct bonding process of $Si/Si_3$$N_4$ ∥ $SiO_2$/Si silicon wafer pairs has been investigated with an infrared camera. The voids that formed in the premating process grew in the conventional furnace annealing process at a temperature of $600^{\circ}C$. The voids are never shrunken even with the additional annealing process at the higher temperatures. We observed that the voids became smaller and disappeared with sequential scanning by our newly proposed fast linear annealing(FLA). FLA irradiates the focused line-shape halogen light on the surface while wafer moves from one edge to the other. We also propose the void shrinking mechanism in FLA with the finite differential method (FDM). Our results imply that we may eliminate the voids and enhance the yield for the direct bonding of wafer pairs by employing FLA.